JP6578588B2 - 蛍光体部材及び発光装置 - Google Patents
蛍光体部材及び発光装置 Download PDFInfo
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title claims description 227
- 239000013078 crystal Substances 0.000 claims description 53
- 230000005284 excitation Effects 0.000 claims description 35
- 230000007423 decrease Effects 0.000 claims description 12
- 238000002189 fluorescence spectrum Methods 0.000 claims description 5
- 239000000758 substrate Substances 0.000 description 46
- 239000000919 ceramic Substances 0.000 description 37
- 239000000843 powder Substances 0.000 description 26
- 238000000034 method Methods 0.000 description 11
- 230000000171 quenching effect Effects 0.000 description 11
- 229920005989 resin Polymers 0.000 description 11
- 239000011347 resin Substances 0.000 description 11
- 238000000295 emission spectrum Methods 0.000 description 10
- 238000010791 quenching Methods 0.000 description 10
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 8
- 239000012190 activator Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 239000012071 phase Substances 0.000 description 7
- 229910002704 AlGaN Inorganic materials 0.000 description 6
- 239000000470 constituent Substances 0.000 description 5
- 230000000295 complement effect Effects 0.000 description 4
- 238000000695 excitation spectrum Methods 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 229910052684 Cerium Inorganic materials 0.000 description 3
- 229910052688 Gadolinium Inorganic materials 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 239000002223 garnet Substances 0.000 description 3
- 239000011812 mixed powder Substances 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 238000000634 powder X-ray diffraction Methods 0.000 description 3
- 238000010298 pulverizing process Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 229920002050 silicone resin Polymers 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000005231 Edge Defined Film Fed Growth Methods 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000008187 granular material Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 238000012827 research and development Methods 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 238000006862 quantum yield reaction Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
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- C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
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- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
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- C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets
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Description
(蛍光体)
第1の実施の形態に係る蛍光体は、Y3Al5O12(YAG)結晶を母結晶とするYAG系蛍光体であり、例えば、Y3−x−yLxMyAl5−ZNZO12−w(Lは、Gd又はLu、Mは、Ce,Tb,Eu,Yb,Pr,Tm,Smからなる群から選択される1種類以上の元素、Nは、Ga又はIn、0≦x<3、0<y≦1、0≦z≦5、−0.2≦w≦0.2)で表される組成を有する。ここで、Lは、Yを置換する発光中心とならない成分である。Mは、Yを置換する発光中心となり得る成分(付活剤)である。また、NはAlを置換する成分である。
まず、出発原料として、高純度(99.99%以上)のY2O3、Al2O3、CeO2、Gd2O3の粉末を用意し、乾式混合を行い、混合粉末を得る。なお、Y、Al、Ce、及びGdの原料粉末は、上記のものに限られない。
本発明の第2の実施の形態は、第1の実施の形態に係る蛍光体を用いた発光装置である。以下に、第2の実施の形態について、図6A、図6Bを参照して説明する。図6Aは、第2の実施の形態に係る発光装置1の断面図であり、図6Bは、発光装置1を構成する発光素子10及びその周辺部の断面図である。
次に、本発明の第3の実施の形態について、図7A、図7B、図7Cを参照して説明する。図7Aは、第3の実施の形態に係る発光装置1Aの断面図、図7Bは、発光装置1Aを構成する発光素子10Aの断面図、図7Cは、発光素子10Aの平面図である。
次に、本発明の第4の実施の形態について、図8を参照して説明する。図8は、第4の実施の形態に係る発光装置1Bの断面図である。
次に、本発明の第5の実施の形態について、図9を参照して説明する。図9は、第5の実施の形態に係る発光装置1Cの断面図である。図9に示すように、本実施の形態では、発光素子と、発光素子が実装される基板及び蛍光体との位置関係が第4の実施の形態とは異なっている。以下、第2、第3又は第4の実施の形態について説明したものと同一の機能及び構成を有する発光装置1Cの構成要素については共通する符号を付して説明を省略する。
次に、本発明の第6の実施の形態について、図10A、図10Bを参照して説明する。図10Aは、第6の実施の形態に係る発光装置1Dの断面図、図10Bは、発光装置1Dを構成する発光素子7の断面図である。図10Aに示すように、本実施の形態では、発光素子の構成及びその配置が第4の実施の形態とは異なっている。以下、第2、第3又は第4の実施の形態について説明したものと同一の機能及び構成を有する発光装置1Dの構成要素については共通する符号を付して説明を省略する。
次に、本発明の第7の実施の形態について、図11を参照して説明する。図11は、第7の実施の形態に係る発光装置1Eの断面図である。図11に示すように、本実施の形態では、蛍光体の状態及びその配置が第2の実施の形態とは異なっている。以下、第2の実施の形態について説明したものと同一の機能及び構成を有する発光装置1Eの構成要素については共通する符号を付して説明を省略する。
次に、本発明の第8の実施の形態について、図12A、図12Bを参照して説明する。図12Aは、第8の実施の形態に係る発光装置1Fの断面図であり、図12Bは、発光装置1Fを構成する発光素子10及びその周辺部の断面図である。図12A、図12Bに示すように、本実施の形態では、蛍光体の状態及びその配置が第2の実施の形態とは異なっている。以下、第2の実施の形態について説明したものと同一の機能及び構成を有する発光装置1Eの構成要素については共通する符号を付して説明を省略する。
上記実施の形態によれば、量子効率や温度消光特性に優れた蛍光体を得ることができる。また、量子効率や温度消光特性に優れた蛍光体を用いることにより、高輝度、高出力、長寿命等の優れた特徴を有する発光装置を得ることができる。
Claims (5)
- 励起光の波長が460nmであり、温度を25℃から100℃まで上げたときの蛍光強度の減少が3%未満であり、
YAG結晶を母結晶とする、複数の粒状の単結晶を含み、前記YAG結晶は、Y3−x−yGdxCeyAl5O12‐w(0.03≦x≦0.2、0.003≦y≦0.2、−0.2≦w≦0.2)で表される組成を有する平板状の蛍光体部材。 - 励起光の波長が460nmであるときの25℃での量子効率が92%以上である、
請求項1に記載の平板状の蛍光体部材。 - 励起光の波長を460nmから480nmへ変化させたときの、蛍光スペクトルの半値幅の変化が1.5nm以下である、
請求項1に記載の平板状の蛍光体部材。 - 青色系の光を発する発光素子と、
前記発光素子の光を励起光として黄色系の光を発する、請求項1〜3のいずれか一項に記載の平板状の蛍光体部材とを備えた、発光装置。 - 前記発光素子と前記平板状の蛍光体部材は、離間した構成を有する請求項4に記載の発光装置。
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JP2018191006A (ja) * | 2013-10-23 | 2018-11-29 | 株式会社光波 | 発光装置 |
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JP2018021206A (ja) | 2018-02-08 |
CN104245883B (zh) | 2017-06-27 |
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CN107180906B (zh) | 2021-05-28 |
EP2843026A1 (en) | 2015-03-04 |
JP6241002B2 (ja) | 2017-12-06 |
JPWO2013161683A1 (ja) | 2015-12-24 |
JP2015004071A (ja) | 2015-01-08 |
EP3470495A1 (en) | 2019-04-17 |
JP5649202B2 (ja) | 2015-01-07 |
EP3470495B1 (en) | 2022-08-24 |
CN104245883A (zh) | 2014-12-24 |
WO2013161683A1 (ja) | 2013-10-31 |
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CN107180906A (zh) | 2017-09-19 |
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