JP6563535B2 - 方位角方向及び半径方向分布制御を備えたマルチゾーンガス注入アセンブリ - Google Patents
方位角方向及び半径方向分布制御を備えたマルチゾーンガス注入アセンブリ Download PDFInfo
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- 238000002347 injection Methods 0.000 title claims description 64
- 239000007924 injection Substances 0.000 title claims description 64
- 238000009826 distribution Methods 0.000 title description 36
- 229910010293 ceramic material Inorganic materials 0.000 claims description 4
- 239000007789 gas Substances 0.000 description 273
- 238000000034 method Methods 0.000 description 17
- 230000008569 process Effects 0.000 description 16
- 239000000463 material Substances 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 229910000831 Steel Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 238000004886 process control Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/26—Plasma torches
- H05H1/32—Plasma torches using an arc
- H05H1/34—Details, e.g. electrodes, nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45578—Elongated nozzles, tubes with holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Description
本開示は、半導体ウェハ等のワークピースを処理するためのプラズマリアクタ内の処理ガス分布に関する。
プラズマリアクタのチャンバ内における処理ガス分布の制御は、プラズマ処理中にワークピース上のエッチング速度分布又は堆積速度分布のプロセス制御に影響を与える。ガス注入ノズルは、チャンバの中央部と周辺部に配置することができる。チャンバの中央部と周辺部の両方でガス注入を制御することが望ましい。1つの課題は、処理ガス流量の半径方向分布を制御するシステムは、一般的に、処理ガス流量の方位角方向分布を制御しないことである。本明細書で用いるように、用語「方位角」は、円筒状の処理チャンバ内の周方向を指す。別の1つの課題は、側壁近くのガス注入器を用いてガス流量の方位角分布を制御するシステムは、方位角方向に沿った圧力降下に苦しむことである。
グ内の複数のガス送出インサートポケットと、(b)ガス送出インサートポケット内へ延
びる複数のガス送出インサートと、(c)ガス送出インサートと同心の複数のOリングイ
ンサート溝の各々と、複数のガス送出インサートポケットの対応するものの内部側壁に対
して圧縮される複数のOリングインサート溝内の第2の複数のOリングとを更に含む。
記で簡単に要約した本発明のより詳細な説明を、添付図面に示されるその実施形態を参照
して得ることができる。特定の周知のプロセスは、本発明を不明瞭にしないために、本明
細書で説明されていないことを理解すべきである。
64内に注入ノズル148を挿入する工程と、ガス送出リング144上にガス送出インサ
ート146を取り付ける工程と、その後、ガス送出インサート146をそれぞれのインサ
ート収容穴186内に挿入するようにガス送出リング140と上部ライナリング140を
一緒にする工程を伴う。
Claims (8)
- プラズマリアクタの上部ライナリングのノズルポケット内に配置するための側面ガス注入ノズルであって、
外側ノズル面を有する円筒状本体と、
円筒状本体のリング半径方向内側端部にオリフィスを形成するガス注入通路と、
円筒状本体のリング半径方向外側の端部近くで円筒状本体を貫通して延在するリング軸方向に延在するガス送出インサート穴と、
リング軸方向に延在するガス送出インサート穴からガス注入通路まで円筒状本体を貫通して延在する内部リング半径方向ノズルガス流通路と、
前記外側ノズル面内かつ円筒状本体と同心の複数のOリングノズル溝と、
円筒状本体のリング半径方向外側端部からOリングノズル溝まで延在する外側ノズル面内のスロット部を含む軸方向排気スロットとを含む側面ガス注入ノズル。 - 軸方向排気スロットは、円筒状本体のリング半径方向外側端部と複数のOリングノズル溝のうちの第1の溝との間に延在する第1の軸方向スロット部を含む、請求項1記載の側面ガス注入ノズル。
- 軸方向排気スロットは、複数のOリングノズル溝のうちの第1の溝から複数のOリングノズル溝のうちの第2の溝まで延在する外側ノズル面内の第2の軸方向スロット部を含む、請求項2記載の側面ガス注入ノズル。
- 軸方向排気スロットは、複数のOリングノズル溝のうちの第2の溝から円筒状本体のリング半径方向内側端部に向かって短い距離だけ延在する外側ノズル面内の第3の軸方向スロット部を含む、請求項3記載の側面ガス注入ノズル。
- 軸方向排気スロットは、Oリングノズル溝のうちの第1の溝の内側ノズル溝面内に形成された第1溝軸方向スロット部と、Oリングノズル溝のうちの第2の溝の内側ノズル溝面内に形成された第2溝軸方向スロット部とを含み、前記両ノズル溝面内の前記両スロット部は、複数のOリングノズル溝内で複数のOリングの周囲に排気通路を提供する、請求項1記載の側面ガス注入ノズル。
- 側面ガス注入ノズルは、セラミックス材料を含む、請求項1記載の側面ガス注入ノズル。
- 前記複数のOリングノズル溝内に、前記ノズルポケットの対応するものの内部側壁に対して圧縮された複数のOリングを含む、請求項1記載の側面ガス注入ノズル。
- リング軸方向に延在するガス送出インサート穴は、複数のOリングノズル溝のうちの第1の溝と第2の溝との間に配置されている、請求項1記載の側面ガス注入ノズル。
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US201361777225P | 2013-03-12 | 2013-03-12 | |
US61/777,225 | 2013-03-12 |
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JP2018018875A Active JP6563535B2 (ja) | 2013-03-12 | 2018-02-06 | 方位角方向及び半径方向分布制御を備えたマルチゾーンガス注入アセンブリ |
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JP (3) | JP6473131B2 (ja) |
KR (3) | KR102152858B1 (ja) |
CN (3) | CN107424901B (ja) |
TW (1) | TWI586829B (ja) |
WO (1) | WO2014163742A1 (ja) |
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