JP6557190B2 - 半導体処理チャンバーのための銀リフレクタ - Google Patents
半導体処理チャンバーのための銀リフレクタ Download PDFInfo
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- JP6557190B2 JP6557190B2 JP2016157723A JP2016157723A JP6557190B2 JP 6557190 B2 JP6557190 B2 JP 6557190B2 JP 2016157723 A JP2016157723 A JP 2016157723A JP 2016157723 A JP2016157723 A JP 2016157723A JP 6557190 B2 JP6557190 B2 JP 6557190B2
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- reflector
- lamp
- silver
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 title claims description 65
- 229910052709 silver Inorganic materials 0.000 title claims description 64
- 239000004332 silver Substances 0.000 title claims description 64
- 239000004065 semiconductor Substances 0.000 title claims description 23
- 239000000758 substrate Substances 0.000 claims description 39
- 239000000463 material Substances 0.000 claims description 27
- 239000010410 layer Substances 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 15
- 230000005855 radiation Effects 0.000 claims description 13
- 238000009792 diffusion process Methods 0.000 claims description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 9
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims description 9
- 230000004888 barrier function Effects 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 239000012790 adhesive layer Substances 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 239000003054 catalyst Substances 0.000 claims description 2
- CXOWYMLTGOFURZ-UHFFFAOYSA-N azanylidynechromium Chemical compound [Cr]#N CXOWYMLTGOFURZ-UHFFFAOYSA-N 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000011247 coating layer Substances 0.000 claims 1
- 239000012530 fluid Substances 0.000 claims 1
- 229910000623 nickel–chromium alloy Inorganic materials 0.000 claims 1
- 238000000576 coating method Methods 0.000 description 21
- 239000011248 coating agent Substances 0.000 description 16
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 15
- 229910052737 gold Inorganic materials 0.000 description 15
- 239000010931 gold Substances 0.000 description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 238000010586 diagram Methods 0.000 description 8
- 238000002845 discoloration Methods 0.000 description 8
- 235000012431 wafers Nutrition 0.000 description 7
- -1 Si 3 N 4 Inorganic materials 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- 238000002310 reflectometry Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000002826 coolant Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229910004261 CaF 2 Inorganic materials 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 239000012809 cooling fluid Substances 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910001120 nichrome Inorganic materials 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000011253 protective coating Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- 150000003568 thioethers Chemical class 0.000 description 2
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910000599 Cr alloy Inorganic materials 0.000 description 1
- 241000409201 Luina Species 0.000 description 1
- 229910018487 Ni—Cr Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 239000003463 adsorbent Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000004320 controlled atmosphere Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000112 cooling gas Substances 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005562 fading Methods 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 239000004811 fluoropolymer Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Optical Elements Other Than Lenses (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
- Chemical Vapour Deposition (AREA)
- Fastening Of Light Sources Or Lamp Holders (AREA)
- Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
Description
Claims (8)
- 半導体処理チャンバー内での使用のためのリフレクタであって、
前記半導体処理チャンバー(12)内に取り付けられた加熱ランプ(36、212)から生じる放射を反射するために、前記処理チャンバー(12)内に配置されたリフレクタ基板(88、601、701)と、
前記リフレクタ基板(88、601、701)上に配置された、銀を含む反射層(602、702)と、
前記反射層(602、702)を前記リフレクタ基板(88、601、701)に接着する接着層と、
前記反射層(602、702)と前記リフレクタ基板(88、601、701)との間の拡散障壁であって、ニッケル、ニッケル−クロム合金、および窒化クロム合金から選択された拡散障壁と
を備え、
前記反射層は、99.99%を越える銀含有量を含み、
前記反射層を被覆する透光性被覆層は形成されていない、リフレクタ。 - 前記リフレクタ基板は、その中にランプを受け入れるように適合された、複数の空洞を有する一体型ランプヘッドの一部を備える、請求項1に記載のリフレクタ。
- 前記リフレクタ基板は、半導体処理チャンバーのライトパイプ内に配置されるように適合されたスリーブを備える、請求項1または2に記載のリフレクタ。
- 前記半導体処理チャンバーは、急速熱処理チャンバーである、請求項1から3のいずれか一項に記載のリフレクタ。
- 前記半導体処理チャンバーは、エピタキシャル処理チャンバーである、請求項1から4のいずれか一項に記載のリフレクタ。
- 基板の処理中に基板がその上に位置決めされる支持部を有する処理チャンバーと、
放射エネルギーを放射する加熱ランプと、
前記ランプからの放射を反射するように位置決めされた請求項1から5のいずれか一項に記載のリフレクタとを備える、半導体処理装置。 - 前記リフレクタ基板は、その中にランプを受け入れるように適合された、複数の空洞を有する一体型ランプヘッドの一部を備える、請求項6に記載の半導体処理装置。
- ランプヘッドと流体が連通するチャネルをさらに備え、前記ランプヘッドは、硫化物形成または硫化物触媒材料の量を最小限にするように制御される雰囲気によって囲まれる、請求項6に記載の半導体処理装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/036,078 US8314368B2 (en) | 2008-02-22 | 2008-02-22 | Silver reflectors for semiconductor processing chambers |
US12/036,078 | 2008-02-22 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2014208871A Division JP2015092564A (ja) | 2008-02-22 | 2014-10-10 | 半導体処理チャンバーのための銀リフレクタ |
Related Child Applications (1)
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JP2018089285A Division JP6695928B2 (ja) | 2008-02-22 | 2018-05-07 | 半導体処理チャンバーのための銀リフレクタ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017011282A JP2017011282A (ja) | 2017-01-12 |
JP6557190B2 true JP6557190B2 (ja) | 2019-08-07 |
Family
ID=40985911
Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
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JP2010547781A Pending JP2011515021A (ja) | 2008-02-22 | 2009-02-20 | 半導体処理チャンバーのための銀リフレクタ |
JP2014208871A Pending JP2015092564A (ja) | 2008-02-22 | 2014-10-10 | 半導体処理チャンバーのための銀リフレクタ |
JP2016157723A Active JP6557190B2 (ja) | 2008-02-22 | 2016-08-10 | 半導体処理チャンバーのための銀リフレクタ |
JP2018089285A Active JP6695928B2 (ja) | 2008-02-22 | 2018-05-07 | 半導体処理チャンバーのための銀リフレクタ |
Family Applications Before (2)
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JP2010547781A Pending JP2011515021A (ja) | 2008-02-22 | 2009-02-20 | 半導体処理チャンバーのための銀リフレクタ |
JP2014208871A Pending JP2015092564A (ja) | 2008-02-22 | 2014-10-10 | 半導体処理チャンバーのための銀リフレクタ |
Family Applications After (1)
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JP2018089285A Active JP6695928B2 (ja) | 2008-02-22 | 2018-05-07 | 半導体処理チャンバーのための銀リフレクタ |
Country Status (7)
Country | Link |
---|---|
US (1) | US8314368B2 (ja) |
EP (1) | EP2257973B1 (ja) |
JP (4) | JP2011515021A (ja) |
KR (1) | KR101614266B1 (ja) |
CN (2) | CN101952946A (ja) |
TW (1) | TWI416648B (ja) |
WO (1) | WO2009105599A1 (ja) |
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JP2015092564A (ja) | 2015-05-14 |
JP2018152579A (ja) | 2018-09-27 |
KR101614266B1 (ko) | 2016-04-21 |
JP6695928B2 (ja) | 2020-05-20 |
CN105336604B (zh) | 2018-01-30 |
US8314368B2 (en) | 2012-11-20 |
KR20100134604A (ko) | 2010-12-23 |
JP2011515021A (ja) | 2011-05-12 |
TWI416648B (zh) | 2013-11-21 |
EP2257973A1 (en) | 2010-12-08 |
CN101952946A (zh) | 2011-01-19 |
JP2017011282A (ja) | 2017-01-12 |
EP2257973B1 (en) | 2014-09-17 |
EP2257973A4 (en) | 2012-05-09 |
WO2009105599A1 (en) | 2009-08-27 |
CN105336604A (zh) | 2016-02-17 |
TW200945477A (en) | 2009-11-01 |
US20090212037A1 (en) | 2009-08-27 |
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