JP6552547B2 - 赤外線センサおよび赤外線固体撮像装置 - Google Patents
赤外線センサおよび赤外線固体撮像装置 Download PDFInfo
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- JP6552547B2 JP6552547B2 JP2017102744A JP2017102744A JP6552547B2 JP 6552547 B2 JP6552547 B2 JP 6552547B2 JP 2017102744 A JP2017102744 A JP 2017102744A JP 2017102744 A JP2017102744 A JP 2017102744A JP 6552547 B2 JP6552547 B2 JP 6552547B2
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- metal wiring
- support leg
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- 238000003384 imaging method Methods 0.000 title claims description 26
- 239000002184 metal Substances 0.000 claims description 104
- 229910052751 metal Inorganic materials 0.000 claims description 104
- 230000003667 anti-reflective effect Effects 0.000 claims description 9
- 238000005530 etching Methods 0.000 description 37
- 239000010408 film Substances 0.000 description 34
- 238000000034 method Methods 0.000 description 33
- 239000000758 substrate Substances 0.000 description 17
- 238000005240 physical vapour deposition Methods 0.000 description 15
- 239000000463 material Substances 0.000 description 14
- 230000003287 optical effect Effects 0.000 description 11
- 239000010936 titanium Substances 0.000 description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 8
- 239000010409 thin film Substances 0.000 description 8
- 229910052719 titanium Inorganic materials 0.000 description 8
- 238000001312 dry etching Methods 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 6
- 230000035945 sensitivity Effects 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 5
- 238000002834 transmittance Methods 0.000 description 5
- 238000001039 wet etching Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 229910016570 AlCu Inorganic materials 0.000 description 1
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 description 1
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/06—Arrangements for eliminating effects of disturbing radiation; Arrangements for compensating changes in sensitivity
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/0225—Shape of the cavity itself or of elements contained in or suspended over the cavity
- G01J5/023—Particular leg structure or construction or shape; Nanotubes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/0225—Shape of the cavity itself or of elements contained in or suspended over the cavity
- G01J5/024—Special manufacturing steps or sacrificial layers or layer structures
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J2005/0077—Imaging
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
- G01J2005/202—Arrays
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Manufacturing & Machinery (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Description
はじめに、本実施の形態1における熱型赤外線センサの技術的特徴を明確にするために、比較例として、従来の熱型赤外線センサ6について、図1〜図3を参照しながら説明する。図1は、従来の赤外線固体撮像装置を示す構成図である。図2は、図1の熱型赤外線センサ6の斜視図である。図3は、図2の赤外線センサ画素7の構造断面図である。
<支持脚絶縁層14>
・層膜:酸化膜
・酸化膜の膜厚:0.5μm
・酸化膜の熱伝導率:1.38W/m・K
<支持脚メタル配線層15>
・層膜:チタン膜
・チタン膜の膜厚:0.1μm
・チタン膜の熱伝導率:21.9W/m・K
続いて、図4に示すように、公知の写真製版技術とドライエッチング技術を適用して、絶縁層104をエッチング加工することで、コンタクトホール105を形成する。
本発明の実施の形態2では、メタル配線層103上に反射防止層113を堆積し、メタル配線層103をエッチング加工することなく、順テーパー部113aが形成されるように反射防止層113をエッチング加工する場合について説明する。なお、本実施の形態2では、先の実施の形態1と同様である点の説明を省略し、先の実施の形態1と異なる点を中心に説明する。
本発明の実施の形態3では、コンタクトホール105の側壁部に順テーパー形状のサイドウォール106を形成することに加えて、絶縁層104の内側面上部に順テーパー部104aを形成する場合について説明する。なお、本実施の形態3では、先の実施の形態1と同様である点の説明を省略し、先の実施の形態1と異なる点を中心に説明する。
Claims (4)
- 信号読出し回路と電気的に接続されるメタル配線層と、支持脚内の支持脚メタル配線層とを電気的に接続するためのコンタクトホールが形成される赤外線センサ画素を備えて構成される赤外線センサであって、
前記メタル配線層上に形成されている反射防止層と、
前記反射防止層の上部が露出するように前記メタル配線層および前記反射防止層を覆う絶縁層と、
前記反射防止層の前記上部に形成されている順テーパー部と、
前記絶縁層の内側面に形成されている順テーパー形状のサイドウォールと、
を備え、
前記コンタクトホールの底部および側壁部の形状が順テーパー形状となっている
赤外線センサ。 - 前記絶縁層の上部に形成されている順テーパー部をさらに備え、
前記コンタクトホールの前記底部および前記側壁部に加えて、前記コンタクトホールの開口部の形状が順テーパー形状となっている
請求項1に記載の赤外線センサ。 - 前記赤外線センサは、熱型赤外線センサである
請求項1または2に記載の赤外線センサ。 - 請求項1から3のいずれか1項に記載の赤外線センサを備えた
赤外線固体撮像装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017102744A JP6552547B2 (ja) | 2017-05-24 | 2017-05-24 | 赤外線センサおよび赤外線固体撮像装置 |
US15/810,369 US10274374B2 (en) | 2017-05-24 | 2017-11-13 | Infrared sensor and infrared solid-state image pickup apparatus |
DE102017222480.0A DE102017222480A1 (de) | 2017-05-24 | 2017-12-12 | Infrarotsensor und infrarothalbleiter-bildaufnahmevorrichtung |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017102744A JP6552547B2 (ja) | 2017-05-24 | 2017-05-24 | 赤外線センサおよび赤外線固体撮像装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018197713A JP2018197713A (ja) | 2018-12-13 |
JP6552547B2 true JP6552547B2 (ja) | 2019-07-31 |
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JP2017102744A Expired - Fee Related JP6552547B2 (ja) | 2017-05-24 | 2017-05-24 | 赤外線センサおよび赤外線固体撮像装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US10274374B2 (ja) |
JP (1) | JP6552547B2 (ja) |
DE (1) | DE102017222480A1 (ja) |
Family Cites Families (24)
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US5286976A (en) | 1988-11-07 | 1994-02-15 | Honeywell Inc. | Microstructure design for high IR sensitivity |
JPH04102321A (ja) * | 1990-08-22 | 1992-04-03 | Fujitsu Ltd | 半導体装置の製造方法 |
JP3200475B2 (ja) * | 1992-10-05 | 2001-08-20 | 三菱電機株式会社 | 半導体装置の製造方法 |
US7495220B2 (en) * | 1995-10-24 | 2009-02-24 | Bae Systems Information And Electronics Systems Integration Inc. | Uncooled infrared sensor |
US6144030A (en) | 1997-10-28 | 2000-11-07 | Raytheon Company | Advanced small pixel high fill factor uncooled focal plane array |
KR100267106B1 (ko) * | 1998-09-03 | 2000-10-02 | 윤종용 | 반도체 소자의 다층 배선 형성방법 |
US6475836B1 (en) * | 1999-03-29 | 2002-11-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
JP3377041B2 (ja) * | 2000-03-10 | 2003-02-17 | 日本電気株式会社 | 熱分離構造を有する熱型赤外線検出器 |
JP3944465B2 (ja) | 2003-04-11 | 2007-07-11 | 三菱電機株式会社 | 熱型赤外線検出器及び赤外線フォーカルプレーンアレイ |
US7122903B2 (en) * | 2003-10-21 | 2006-10-17 | Sharp Kabushiki Kaisha | Contact plug processing and a contact plug |
JP2005167122A (ja) * | 2003-12-05 | 2005-06-23 | Kawasaki Microelectronics Kk | 半導体装置の製造方法 |
JP2005229052A (ja) * | 2004-02-16 | 2005-08-25 | Seiko Epson Corp | 半導体装置の製造方法 |
US7264983B2 (en) * | 2004-11-04 | 2007-09-04 | Unimems Manufacturing Co., Ltd. | Method of enhancing connection strength for suspended membrane leads and substrate contacts |
JP2006226891A (ja) * | 2005-02-18 | 2006-08-31 | Nec Corp | 熱型赤外線検出素子 |
JP4978501B2 (ja) * | 2008-02-14 | 2012-07-18 | 日本電気株式会社 | 熱型赤外線検出器及びその製造方法 |
JP4697611B2 (ja) * | 2008-03-28 | 2011-06-08 | 日本電気株式会社 | 熱型赤外線固体撮像素子及びその製造方法 |
KR100983818B1 (ko) * | 2009-09-02 | 2010-09-27 | 한국전자통신연구원 | 볼로미터용 저항재료, 이를 이용한 적외선 검출기용 볼로미터, 및 이의 제조방법 |
JP2011243960A (ja) * | 2010-04-21 | 2011-12-01 | Elpida Memory Inc | 半導体装置及びその製造方法 |
US8592302B2 (en) * | 2011-11-30 | 2013-11-26 | GlobalFoundries, Inc. | Patterning method for fabrication of a semiconductor device |
KR20140045842A (ko) * | 2012-10-09 | 2014-04-17 | 삼성전자주식회사 | 공진 주파수가 다른 복수의 공진 구조체를 포함하는 전자기파 스펙트럼 분석기 및 적외선 열상 분석기 |
KR102095494B1 (ko) * | 2013-07-01 | 2020-03-31 | 삼성전자주식회사 | 씨모스 이미지 센서 |
US9583456B2 (en) * | 2013-11-22 | 2017-02-28 | Invensas Corporation | Multiple bond via arrays of different wire heights on a same substrate |
KR20230169471A (ko) * | 2015-03-31 | 2023-12-15 | 하마마츠 포토닉스 가부시키가이샤 | 반도체 장치 |
FR3048125B1 (fr) * | 2016-02-24 | 2020-06-05 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Dispositif de detection de rayonnement electromagnetique a plot de connexion electrique sureleve |
-
2017
- 2017-05-24 JP JP2017102744A patent/JP6552547B2/ja not_active Expired - Fee Related
- 2017-11-13 US US15/810,369 patent/US10274374B2/en active Active
- 2017-12-12 DE DE102017222480.0A patent/DE102017222480A1/de not_active Withdrawn
Also Published As
Publication number | Publication date |
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DE102017222480A1 (de) | 2018-11-29 |
US10274374B2 (en) | 2019-04-30 |
JP2018197713A (ja) | 2018-12-13 |
US20180340836A1 (en) | 2018-11-29 |
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