JP6550381B2 - コンパクトなレーザーデバイス - Google Patents

コンパクトなレーザーデバイス Download PDF

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Publication number
JP6550381B2
JP6550381B2 JP2016522763A JP2016522763A JP6550381B2 JP 6550381 B2 JP6550381 B2 JP 6550381B2 JP 2016522763 A JP2016522763 A JP 2016522763A JP 2016522763 A JP2016522763 A JP 2016522763A JP 6550381 B2 JP6550381 B2 JP 6550381B2
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Japan
Prior art keywords
laser device
semiconductor chip
mesas
laser
layer
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JP2016522763A
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English (en)
Japanese (ja)
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JP2016533639A5 (https=
JP2016533639A (ja
Inventor
ヘニング ゲルラッハ，フィリップ
ヘニング ゲルラッハ，フィリップ
ヴァイグル，アレクサンダー
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Koninklijke Philips NV
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Koninklijke Philips NV
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Publication of JP2016533639A5 publication Critical patent/JP2016533639A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18322—Position of the structure
    • H01S5/18327—Structure being part of a DBR
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H10W46/101—Marks applied to devices, e.g. for alignment or identification characterised by the type of information, e.g. logos or symbols
    • H10W46/106—Marks applied to devices, e.g. for alignment or identification characterised by the type of information, e.g. logos or symbols digital information, e.g. bar codes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H10W46/401—Marks applied to devices, e.g. for alignment or identification for identification or tracking
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H10W46/601—Marks applied to devices, e.g. for alignment or identification for use after dicing
    • H10W46/603—Formed on wafers or substrates before dicing and remaining on chips after dicing

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
JP2016522763A 2013-10-16 2014-10-14 コンパクトなレーザーデバイス Active JP6550381B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP13188872 2013-10-16
EP13188872.9 2013-10-16
PCT/EP2014/071938 WO2015055600A1 (en) 2013-10-16 2014-10-14 Compact laser device

Publications (3)

Publication Number Publication Date
JP2016533639A JP2016533639A (ja) 2016-10-27
JP2016533639A5 JP2016533639A5 (https=) 2018-08-30
JP6550381B2 true JP6550381B2 (ja) 2019-07-24

Family

ID=49356317

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016522763A Active JP6550381B2 (ja) 2013-10-16 2014-10-14 コンパクトなレーザーデバイス

Country Status (6)

Country Link
US (2) US10116119B2 (https=)
EP (1) EP3058592B1 (https=)
JP (1) JP6550381B2 (https=)
CN (1) CN105637634A (https=)
RU (1) RU2672155C2 (https=)
WO (1) WO2015055600A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018178117A (ja) * 2017-04-18 2018-11-15 エムス−パテント アクチエンゲゼルシャフト ポリアミド成形材料及びその成形物

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* Cited by examiner, † Cited by third party
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CN105637634A (zh) * 2013-10-16 2016-06-01 皇家飞利浦有限公司 紧凑激光器件
BR112017021395A2 (pt) 2015-04-10 2018-07-03 Koninklijke Philips Nv dispositivo de laser, módulo de laser, sensor óptico, dispositivo de comunicação móvel, e método de fabricação de um dispositivo de laser
EP3217428B1 (de) * 2016-03-07 2022-09-07 Infineon Technologies AG Mehrfachsubstrat sowie verfahren zu dessen herstellung
JP2017204640A (ja) 2016-05-11 2017-11-16 晶元光電股▲ふん▼有限公司Ｅｐｉｓｔａｒ Ｃｏｒｐｏｒａｔｉｏｎ 発光デバイス及びその製造方法

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US6272160B1 (en) * 1998-02-03 2001-08-07 Applied Micro Circuits Corporation High-speed CMOS driver for vertical-cavity surface-emitting lasers
US6465744B2 (en) * 1998-03-27 2002-10-15 Tessera, Inc. Graded metallic leads for connection to microelectronic elements
DE19954093A1 (de) * 1999-11-10 2001-05-23 Infineon Technologies Ag Anordnung für Hochleistungslaser
US6465774B1 (en) * 2000-06-30 2002-10-15 Honeywell International Inc. Method and system for versatile optical sensor package
US6888871B1 (en) * 2000-07-12 2005-05-03 Princeton Optronics, Inc. VCSEL and VCSEL array having integrated microlenses for use in a semiconductor laser pumped solid state laser system
US6415977B1 (en) 2000-08-30 2002-07-09 Micron Technology, Inc. Method and apparatus for marking and identifying a defective die site
US7085300B2 (en) * 2001-12-28 2006-08-01 Finisar Corporation Integral vertical cavity surface emitting laser and power monitor
US7164702B1 (en) * 2003-08-29 2007-01-16 The United States Of America As Represented By The Secretary Of The Army Optical transmitters and interconnects using surface-emitting lasers and micro-optical elements
JP2005158945A (ja) * 2003-11-25 2005-06-16 Fanuc Ltd 半導体レーザ装置
JP4584066B2 (ja) * 2004-12-10 2010-11-17 韓國電子通信研究院 光感知器を備えた面発光レーザ素子及びこれを用いた光導波路素子
JP4839662B2 (ja) * 2005-04-08 2011-12-21 富士ゼロックス株式会社 面発光半導体レーザアレイおよびそれを用いた光伝送システム
JP5055717B2 (ja) 2005-06-20 2012-10-24 富士ゼロックス株式会社 面発光型半導体レーザ
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018178117A (ja) * 2017-04-18 2018-11-15 エムス−パテント アクチエンゲゼルシャフト ポリアミド成形材料及びその成形物
JP7104548B2 (ja) 2017-04-18 2022-07-21 エムス－パテント アクチエンゲゼルシャフト ポリアミド成形材料及びその成形物

Also Published As

Publication number Publication date
US20190052048A1 (en) 2019-02-14
US20160254640A1 (en) 2016-09-01
EP3058592B1 (en) 2021-12-29
WO2015055600A1 (en) 2015-04-23
RU2016118623A (ru) 2017-11-20
US10707646B2 (en) 2020-07-07
CN105637634A (zh) 2016-06-01
EP3058592A1 (en) 2016-08-24
JP2016533639A (ja) 2016-10-27
US10116119B2 (en) 2018-10-30
RU2016118623A3 (https=) 2018-05-15
RU2672155C2 (ru) 2018-11-12

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