JP2016533639A5 - - Google Patents

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Publication number
JP2016533639A5
JP2016533639A5 JP2016522763A JP2016522763A JP2016533639A5 JP 2016533639 A5 JP2016533639 A5 JP 2016533639A5 JP 2016522763 A JP2016522763 A JP 2016522763A JP 2016522763 A JP2016522763 A JP 2016522763A JP 2016533639 A5 JP2016533639 A5 JP 2016533639A5
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JP
Japan
Prior art keywords
laser device
semiconductor chip
mesas
laser
light intensity
Prior art date
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Application number
JP2016522763A
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English (en)
Japanese (ja)
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JP2016533639A (ja
JP6550381B2 (ja
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Priority claimed from PCT/EP2014/071938 external-priority patent/WO2015055600A1/en
Publication of JP2016533639A publication Critical patent/JP2016533639A/ja
Publication of JP2016533639A5 publication Critical patent/JP2016533639A5/ja
Application granted granted Critical
Publication of JP6550381B2 publication Critical patent/JP6550381B2/ja
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JP2016522763A 2013-10-16 2014-10-14 コンパクトなレーザーデバイス Active JP6550381B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP13188872 2013-10-16
EP13188872.9 2013-10-16
PCT/EP2014/071938 WO2015055600A1 (en) 2013-10-16 2014-10-14 Compact laser device

Publications (3)

Publication Number Publication Date
JP2016533639A JP2016533639A (ja) 2016-10-27
JP2016533639A5 true JP2016533639A5 (https=) 2018-08-30
JP6550381B2 JP6550381B2 (ja) 2019-07-24

Family

ID=49356317

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016522763A Active JP6550381B2 (ja) 2013-10-16 2014-10-14 コンパクトなレーザーデバイス

Country Status (6)

Country Link
US (2) US10116119B2 (https=)
EP (1) EP3058592B1 (https=)
JP (1) JP6550381B2 (https=)
CN (1) CN105637634A (https=)
RU (1) RU2672155C2 (https=)
WO (1) WO2015055600A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105637634A (zh) * 2013-10-16 2016-06-01 皇家飞利浦有限公司 紧凑激光器件
BR112017021395A2 (pt) 2015-04-10 2018-07-03 Koninklijke Philips Nv dispositivo de laser, módulo de laser, sensor óptico, dispositivo de comunicação móvel, e método de fabricação de um dispositivo de laser
EP3217428B1 (de) * 2016-03-07 2022-09-07 Infineon Technologies AG Mehrfachsubstrat sowie verfahren zu dessen herstellung
JP2017204640A (ja) 2016-05-11 2017-11-16 晶元光電股▲ふん▼有限公司Ｅｐｉｓｔａｒ Ｃｏｒｐｏｒａｔｉｏｎ 発光デバイス及びその製造方法
EP3392290B8 (de) * 2017-04-18 2020-11-11 Ems-Chemie Ag Polyamidformmasse und daraus hergestellter formkörper

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US6465774B1 (en) * 2000-06-30 2002-10-15 Honeywell International Inc. Method and system for versatile optical sensor package
US6888871B1 (en) * 2000-07-12 2005-05-03 Princeton Optronics, Inc. VCSEL and VCSEL array having integrated microlenses for use in a semiconductor laser pumped solid state laser system
US6415977B1 (en) 2000-08-30 2002-07-09 Micron Technology, Inc. Method and apparatus for marking and identifying a defective die site
US7085300B2 (en) * 2001-12-28 2006-08-01 Finisar Corporation Integral vertical cavity surface emitting laser and power monitor
US7164702B1 (en) * 2003-08-29 2007-01-16 The United States Of America As Represented By The Secretary Of The Army Optical transmitters and interconnects using surface-emitting lasers and micro-optical elements
JP2005158945A (ja) * 2003-11-25 2005-06-16 Fanuc Ltd 半導体レーザ装置
JP4584066B2 (ja) * 2004-12-10 2010-11-17 韓國電子通信研究院 光感知器を備えた面発光レーザ素子及びこれを用いた光導波路素子
JP4839662B2 (ja) * 2005-04-08 2011-12-21 富士ゼロックス株式会社 面発光半導体レーザアレイおよびそれを用いた光伝送システム
JP5055717B2 (ja) 2005-06-20 2012-10-24 富士ゼロックス株式会社 面発光型半導体レーザ
US7233025B2 (en) * 2005-11-10 2007-06-19 Microsoft Corporation Electronic packaging for optical emitters and sensors
JP5034662B2 (ja) 2006-06-20 2012-09-26 ソニー株式会社 面発光型半導体レーザおよびその製造方法
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CN105637634A (zh) * 2013-10-16 2016-06-01 皇家飞利浦有限公司 紧凑激光器件

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