WO2015189056A3 - Optoelektronisches halbleiterbauelement - Google Patents
Optoelektronisches halbleiterbauelement Download PDFInfo
- Publication number
- WO2015189056A3 WO2015189056A3 PCT/EP2015/062009 EP2015062009W WO2015189056A3 WO 2015189056 A3 WO2015189056 A3 WO 2015189056A3 EP 2015062009 W EP2015062009 W EP 2015062009W WO 2015189056 A3 WO2015189056 A3 WO 2015189056A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- semiconductor
- layer
- current spreading
- semiconductor layer
- semiconductor component
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 13
- 230000005693 optoelectronics Effects 0.000 title abstract 2
- 230000005855 radiation Effects 0.000 abstract 3
- 235000004522 Pentaglottis sempervirens Nutrition 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
Abstract
Es wird ein optoelektronisches Halbleiterbauelement (1) mit einem Halbleiterkörper (2), der eine Halbleiterschichtenfolge mit einem zum Erzeugen von Strahlung vorgesehenen aktiven Bereich (20), einer Halbleiterschicht (21) und einer weiteren Halbleiterschicht (22) aufweist, angegeben, wobei der aktive Bereich zwischen der Halbleiterschicht und der weiteren Halbleiterschicht angeordnet ist; auf einer Strahlungsaustrittsfläche (210) des Halbleiterkörpers eine Stromaufweitungsschicht angeordnet ist; die Stromaufweitungsschicht elektrisch leitend mit einer Kontaktstruktur (4) für die externe elektrische Kontaktierung der Halbleiterschicht verbunden ist; die Stromaufweitungsschicht in Draufsicht auf das Halbleiterbauelement in einem Anschlussbereich (30) an die Halbleiterschicht angrenzt, und die Stromaufweitungsschicht eine Strukturierung (31) mit einer Mehrzahl von Ausnehmungen (35) aufweist, durch die im Betrieb Strahlung aus dem Halbleiterbauelement austritt.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/310,558 US9859463B2 (en) | 2014-06-12 | 2015-05-29 | Optoelectronic semiconductor device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102014108300.8A DE102014108300B4 (de) | 2014-06-12 | 2014-06-12 | Optoelektronische Halbleiterbauelemente |
DE102014108300.8 | 2014-06-12 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2015189056A2 WO2015189056A2 (de) | 2015-12-17 |
WO2015189056A3 true WO2015189056A3 (de) | 2016-02-04 |
Family
ID=53268824
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2015/062009 WO2015189056A2 (de) | 2014-06-12 | 2015-05-29 | Optoelektronisches halbleiterbauelement |
Country Status (4)
Country | Link |
---|---|
US (1) | US9859463B2 (de) |
DE (1) | DE102014108300B4 (de) |
TW (1) | TWI569465B (de) |
WO (1) | WO2015189056A2 (de) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6697275B2 (ja) * | 2016-01-22 | 2020-05-20 | スタンレー電気株式会社 | 半導体発光装置、照明装置、および、車両用照明装置 |
DE102016116986A1 (de) | 2016-09-09 | 2018-03-15 | Osram Opto Semiconductors Gmbh | Bauelement zur Darstellung eines Piktogramms und Verfahren zur Herstellung eines Bauelements |
DE102017117504A1 (de) * | 2017-08-02 | 2019-02-07 | Osram Opto Semiconductors Gmbh | Lichtemittierender Halbleiterchip und optoelektronisches Bauteil |
DE102018111324A1 (de) * | 2018-05-11 | 2019-11-14 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip |
DE102018131579A1 (de) * | 2018-12-10 | 2020-06-10 | Osram Opto Semiconductors Gmbh | Optoelektronisches bauteil und verfahren zur herstellung eines optoelektronischen bauteils |
DE102019114169A1 (de) * | 2019-05-27 | 2020-12-03 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches halbleiterbauelement mit verbindungsbereichen und verfahren zur herstellung des optoelektronischen halbleiterbauelements |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100072487A1 (en) * | 2008-09-22 | 2010-03-25 | Industrial Technology Research Institute | Light emitting diode, package structure and manufacturing method thereof |
JP2010074182A (ja) * | 2009-12-17 | 2010-04-02 | Mitsubishi Chemicals Corp | 窒化物半導体発光素子 |
US20100197055A1 (en) * | 2003-08-19 | 2010-08-05 | Hisanori Tanaka | Semiconductor light emitting device with protrusions to improve external efficiency and crystal growth |
EP2226859A2 (de) * | 2009-03-03 | 2010-09-08 | Kabushiki Kaisha Toshiba | Lichtemittierendes Halbleiterbauelement |
CN102479903A (zh) * | 2010-11-25 | 2012-05-30 | 同方光电科技有限公司 | 一种能增强横向电流扩展的发光二极管 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6335546B1 (en) | 1998-07-31 | 2002-01-01 | Sharp Kabushiki Kaisha | Nitride semiconductor structure, method for producing a nitride semiconductor structure, and light emitting device |
JP3556916B2 (ja) | 2000-09-18 | 2004-08-25 | 三菱電線工業株式会社 | 半導体基材の製造方法 |
DE10346605B4 (de) * | 2003-08-29 | 2022-02-24 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Strahlungemittierendes Halbleiterbauelement |
JP4549434B2 (ja) | 2008-02-13 | 2010-09-22 | 三洋電機株式会社 | モータ駆動装置 |
KR100986560B1 (ko) * | 2010-02-11 | 2010-10-07 | 엘지이노텍 주식회사 | 발광소자 및 그 제조방법 |
JP5687858B2 (ja) * | 2010-07-30 | 2015-03-25 | スタンレー電気株式会社 | 半導体発光装置 |
US9056422B2 (en) * | 2013-04-09 | 2015-06-16 | Massachusetts Institute Of Technology | Methods and apparatus for encoded textures |
-
2014
- 2014-06-12 DE DE102014108300.8A patent/DE102014108300B4/de active Active
-
2015
- 2015-05-29 US US15/310,558 patent/US9859463B2/en active Active
- 2015-05-29 WO PCT/EP2015/062009 patent/WO2015189056A2/de active Application Filing
- 2015-06-10 TW TW104118684A patent/TWI569465B/zh active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100197055A1 (en) * | 2003-08-19 | 2010-08-05 | Hisanori Tanaka | Semiconductor light emitting device with protrusions to improve external efficiency and crystal growth |
US20100072487A1 (en) * | 2008-09-22 | 2010-03-25 | Industrial Technology Research Institute | Light emitting diode, package structure and manufacturing method thereof |
EP2226859A2 (de) * | 2009-03-03 | 2010-09-08 | Kabushiki Kaisha Toshiba | Lichtemittierendes Halbleiterbauelement |
JP2010074182A (ja) * | 2009-12-17 | 2010-04-02 | Mitsubishi Chemicals Corp | 窒化物半導体発光素子 |
CN102479903A (zh) * | 2010-11-25 | 2012-05-30 | 同方光电科技有限公司 | 一种能增强横向电流扩展的发光二极管 |
Also Published As
Publication number | Publication date |
---|---|
DE102014108300B4 (de) | 2022-02-24 |
US9859463B2 (en) | 2018-01-02 |
TW201607077A (zh) | 2016-02-16 |
DE102014108300A1 (de) | 2015-12-17 |
TWI569465B (zh) | 2017-02-01 |
WO2015189056A2 (de) | 2015-12-17 |
US20170092808A1 (en) | 2017-03-30 |
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