RU2016118623A3 - - Google Patents

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Publication number
RU2016118623A3
RU2016118623A3 RU2016118623A RU2016118623A RU2016118623A3 RU 2016118623 A3 RU2016118623 A3 RU 2016118623A3 RU 2016118623 A RU2016118623 A RU 2016118623A RU 2016118623 A RU2016118623 A RU 2016118623A RU 2016118623 A3 RU2016118623 A3 RU 2016118623A3
Authority
RU
Russia
Application number
RU2016118623A
Other languages
Russian (ru)
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RU2016118623A (ru
RU2672155C2 (ru
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed filed Critical
Publication of RU2016118623A publication Critical patent/RU2016118623A/ru
Publication of RU2016118623A3 publication Critical patent/RU2016118623A3/ru
Application granted granted Critical
Publication of RU2672155C2 publication Critical patent/RU2672155C2/ru

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/028Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/04Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042Electrical excitation ; Circuits therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18322Position of the structure
    • H01S5/18327Structure being part of a DBR
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/20Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42Arrays of surface emitting lasers
    • H01S5/423Arrays of surface emitting lasers having a vertical cavity
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00Marks applied to devices, e.g. for alignment or identification
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27Structural arrangements therefor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00Marks applied to devices, e.g. for alignment or identification
    • H10W46/101Marks applied to devices, e.g. for alignment or identification characterised by the type of information, e.g. logos or symbols
    • H10W46/106Marks applied to devices, e.g. for alignment or identification characterised by the type of information, e.g. logos or symbols digital information, e.g. bar codes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00Marks applied to devices, e.g. for alignment or identification
    • H10W46/401Marks applied to devices, e.g. for alignment or identification for identification or tracking
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00Marks applied to devices, e.g. for alignment or identification
    • H10W46/601Marks applied to devices, e.g. for alignment or identification for use after dicing
    • H10W46/603Formed on wafers or substrates before dicing and remaining on chips after dicing

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
RU2016118623A 2013-10-16 2014-10-14 Компактный лазерный прибор RU2672155C2 (ru)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP13188872 2013-10-16
EP13188872.9 2013-10-16
PCT/EP2014/071938 WO2015055600A1 (en) 2013-10-16 2014-10-14 Compact laser device

Publications (3)

Publication Number Publication Date
RU2016118623A RU2016118623A (ru) 2017-11-20
RU2016118623A3 true RU2016118623A3 (https=) 2018-05-15
RU2672155C2 RU2672155C2 (ru) 2018-11-12

Family

ID=49356317

Family Applications (1)

Application Number Title Priority Date Filing Date
RU2016118623A RU2672155C2 (ru) 2013-10-16 2014-10-14 Компактный лазерный прибор

Country Status (6)

Country Link
US (2) US10116119B2 (https=)
EP (1) EP3058592B1 (https=)
JP (1) JP6550381B2 (https=)
CN (1) CN105637634A (https=)
RU (1) RU2672155C2 (https=)
WO (1) WO2015055600A1 (https=)

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CN105637634A (zh) * 2013-10-16 2016-06-01 皇家飞利浦有限公司 紧凑激光器件
BR112017021395A2 (pt) 2015-04-10 2018-07-03 Koninklijke Philips Nv dispositivo de laser, módulo de laser, sensor óptico, dispositivo de comunicação móvel, e método de fabricação de um dispositivo de laser
EP3217428B1 (de) * 2016-03-07 2022-09-07 Infineon Technologies AG Mehrfachsubstrat sowie verfahren zu dessen herstellung
JP2017204640A (ja) 2016-05-11 2017-11-16 晶元光電股▲ふん▼有限公司Epistar Corporation 発光デバイス及びその製造方法
EP3392290B8 (de) * 2017-04-18 2020-11-11 Ems-Chemie Ag Polyamidformmasse und daraus hergestellter formkörper

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US6465774B1 (en) * 2000-06-30 2002-10-15 Honeywell International Inc. Method and system for versatile optical sensor package
US6888871B1 (en) * 2000-07-12 2005-05-03 Princeton Optronics, Inc. VCSEL and VCSEL array having integrated microlenses for use in a semiconductor laser pumped solid state laser system
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US7085300B2 (en) * 2001-12-28 2006-08-01 Finisar Corporation Integral vertical cavity surface emitting laser and power monitor
US7164702B1 (en) * 2003-08-29 2007-01-16 The United States Of America As Represented By The Secretary Of The Army Optical transmitters and interconnects using surface-emitting lasers and micro-optical elements
JP2005158945A (ja) * 2003-11-25 2005-06-16 Fanuc Ltd 半導体レーザ装置
JP4584066B2 (ja) * 2004-12-10 2010-11-17 韓國電子通信研究院 光感知器を備えた面発光レーザ素子及びこれを用いた光導波路素子
JP4839662B2 (ja) * 2005-04-08 2011-12-21 富士ゼロックス株式会社 面発光半導体レーザアレイおよびそれを用いた光伝送システム
JP5055717B2 (ja) 2005-06-20 2012-10-24 富士ゼロックス株式会社 面発光型半導体レーザ
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Also Published As

Publication number Publication date
US20190052048A1 (en) 2019-02-14
US20160254640A1 (en) 2016-09-01
EP3058592B1 (en) 2021-12-29
WO2015055600A1 (en) 2015-04-23
RU2016118623A (ru) 2017-11-20
US10707646B2 (en) 2020-07-07
CN105637634A (zh) 2016-06-01
EP3058592A1 (en) 2016-08-24
JP2016533639A (ja) 2016-10-27
US10116119B2 (en) 2018-10-30
JP6550381B2 (ja) 2019-07-24
RU2672155C2 (ru) 2018-11-12

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MM4A The patent is invalid due to non-payment of fees

Effective date: 20201015