JP6550317B2 - スパッタリング装置 - Google Patents
スパッタリング装置 Download PDFInfo
- Publication number
- JP6550317B2 JP6550317B2 JP2015203295A JP2015203295A JP6550317B2 JP 6550317 B2 JP6550317 B2 JP 6550317B2 JP 2015203295 A JP2015203295 A JP 2015203295A JP 2015203295 A JP2015203295 A JP 2015203295A JP 6550317 B2 JP6550317 B2 JP 6550317B2
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- Prior art keywords
- sputtering
- target
- radiation thermometer
- temperature
- sputtered
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000004544 sputter deposition Methods 0.000 title claims description 84
- 230000005855 radiation Effects 0.000 claims description 48
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 7
- 238000009529 body temperature measurement Methods 0.000 claims description 3
- 239000010408 film Substances 0.000 description 21
- 239000007789 gas Substances 0.000 description 9
- 239000000758 substrate Substances 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000003746 surface roughness Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000003507 refrigerant Substances 0.000 description 3
- 229910016036 BaF 2 Inorganic materials 0.000 description 2
- 229910004261 CaF 2 Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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- Physical Vapour Deposition (AREA)
Description
Claims (3)
- ターゲットと成膜対象物とが配置される真空チャンバと、真空チャンバ内にプラズマを発生させるプラズマ発生手段とを備え、プラズマによりターゲットをスパッタリングして成膜対象物に成膜するスパッタリング装置であって、
ターゲットのスパッタリングされる表面をスパッタ面とし、真空チャンバの壁面に設けられた窓材を介して前記スパッタ面の温度を測定する第1の放射温度計を備えるものにおいて、
ターゲットのスパッタ面のうち前記第1の放射温度計による温度測定位置に対して接離自在に設けられる熱電対と、
前記熱電対をスパッタ面の前記温度測定位置に接触させて測定したスパッタ面の温度を基準値とし、この基準値に基づいて前記第1の放射温度計を校正する校正手段とを更に備えることを特徴とするスパッタリング装置。 - スパッタ面を覆う遮蔽位置とスパッタ面から離間した退避位置との間で移動自在なシャッター板と、前記窓材を介して前記シャッター板の温度を測定する第2の放射温度計とを更に備え、前記校正手段は、前記第2の放射温度計により測定したシャッター板の温度に基づいて前記第1の放射温度計を校正することを特徴とする請求項1記載のスパッタリング装置。
- 前記熱電対は、成膜対象物を保持するステージに出没自在に設けられ、ステージから突出した突出位置で前記スパッタ面に接触することを特徴とする請求項1又は2記載のスパッタリング装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015203295A JP6550317B2 (ja) | 2015-10-14 | 2015-10-14 | スパッタリング装置 |
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JP2015203295A JP6550317B2 (ja) | 2015-10-14 | 2015-10-14 | スパッタリング装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017075360A JP2017075360A (ja) | 2017-04-20 |
JP6550317B2 true JP6550317B2 (ja) | 2019-07-24 |
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JP2015203295A Active JP6550317B2 (ja) | 2015-10-14 | 2015-10-14 | スパッタリング装置 |
Country Status (1)
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JP (1) | JP6550317B2 (ja) |
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2015
- 2015-10-14 JP JP2015203295A patent/JP6550317B2/ja active Active
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JP2017075360A (ja) | 2017-04-20 |
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