JP6545054B2 - 基板処理装置および基板処理方法 - Google Patents

基板処理装置および基板処理方法 Download PDF

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JP6545054B2
JP6545054B2 JP2015182489A JP2015182489A JP6545054B2 JP 6545054 B2 JP6545054 B2 JP 6545054B2 JP 2015182489 A JP2015182489 A JP 2015182489A JP 2015182489 A JP2015182489 A JP 2015182489A JP 6545054 B2 JP6545054 B2 JP 6545054B2
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gas
processing
substrate processing
substrate
processing units
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Japanese (ja)
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JP2016164964A5 (https=
JP2016164964A (ja
Inventor
宏幸 ▲高▼橋
宏幸 ▲高▼橋
和典 風間
和典 風間
岩渕　紀之
紀之 岩渕
戸田　聡
聡 戸田
哲朗 ▲高▼橋
哲朗 ▲高▼橋
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to KR1020150144002A priority Critical patent/KR101876616B1/ko
Priority to TW104133953A priority patent/TWI667720B/zh
Priority to US14/886,325 priority patent/US10460949B2/en
Priority to CN201510685548.9A priority patent/CN105529289B/zh
Priority to CN201811000665.7A priority patent/CN109244004B/zh
Publication of JP2016164964A publication Critical patent/JP2016164964A/ja
Publication of JP2016164964A5 publication Critical patent/JP2016164964A5/ja
Priority to KR1020180075576A priority patent/KR101934237B1/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45557—Pulsed pressure or control pressure
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07231—Techniques
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
JP2015182489A 2014-10-20 2015-09-16 基板処理装置および基板処理方法 Active JP6545054B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1020150144002A KR101876616B1 (ko) 2014-10-20 2015-10-15 기판 처리 장치, 기판 처리 방법 및 기억 매체
TW104133953A TWI667720B (zh) 2014-10-20 2015-10-16 Substrate processing apparatus and substrate processing method
US14/886,325 US10460949B2 (en) 2014-10-20 2015-10-19 Substrate processing apparatus, substrate processing method and storage medium
CN201811000665.7A CN109244004B (zh) 2014-10-20 2015-10-20 基板处理装置和基板处理方法
CN201510685548.9A CN105529289B (zh) 2014-10-20 2015-10-20 基板处理装置和基板处理方法
KR1020180075576A KR101934237B1 (ko) 2014-10-20 2018-06-29 기판 처리 장치, 기판 처리 방법 및 기억 매체

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2014213887 2014-10-20
JP2014213887 2014-10-20
JP2015036889 2015-02-26
JP2015036889 2015-02-26

Publications (3)

Publication Number Publication Date
JP2016164964A JP2016164964A (ja) 2016-09-08
JP2016164964A5 JP2016164964A5 (https=) 2018-06-28
JP6545054B2 true JP6545054B2 (ja) 2019-07-17

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JP2015182489A Active JP6545054B2 (ja) 2014-10-20 2015-09-16 基板処理装置および基板処理方法

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JP (1) JP6545054B2 (https=)
KR (2) KR101876616B1 (https=)
CN (1) CN109244004B (https=)
TW (1) TWI667720B (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6667412B2 (ja) * 2016-09-30 2020-03-18 東京エレクトロン株式会社 基板処理装置
JP6844263B2 (ja) * 2017-01-05 2021-03-17 東京エレクトロン株式会社 基板処理装置
JP7257813B2 (ja) * 2019-02-21 2023-04-14 東京エレクトロン株式会社 水蒸気処理装置及び水蒸気処理方法
KR102202463B1 (ko) * 2019-03-13 2021-01-14 세메스 주식회사 기판 처리 장치 및 방법
KR102800139B1 (ko) * 2019-12-30 2025-04-28 주성엔지니어링(주) 기판처리방법 및 기판처리장치
JP6815542B2 (ja) * 2020-02-04 2021-01-20 東京エレクトロン株式会社 基板処理装置
WO2022065114A1 (ja) * 2020-09-24 2022-03-31 東京エレクトロン株式会社 ガスを供給する装置、基板を処理するシステム、及びガスを供給する方法
JP7600018B2 (ja) * 2021-03-30 2024-12-16 東京エレクトロン株式会社 基板処理装置及び基板処理方法
CN117448796B (zh) * 2023-10-27 2026-03-24 北京北方华创微电子装备有限公司 一种控制方法、装置、半导体设备及计算机可读存储介质

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JPH10158843A (ja) * 1996-12-06 1998-06-16 Furukawa Electric Co Ltd:The 気相成長装置
JP2002110570A (ja) * 2000-10-04 2002-04-12 Asm Japan Kk 半導体製造装置用ガスラインシステム
US6755150B2 (en) * 2001-04-20 2004-06-29 Applied Materials Inc. Multi-core transformer plasma source
JP2003049278A (ja) * 2001-08-06 2003-02-21 Canon Inc 真空処理方法及び真空処理装置
US20060176928A1 (en) * 2005-02-08 2006-08-10 Tokyo Electron Limited Substrate processing apparatus, control method adopted in substrate processing apparatus and program
US20080006650A1 (en) * 2006-06-27 2008-01-10 Applied Materials, Inc. Method and apparatus for multi-chamber exhaust control
CN101779269B (zh) * 2008-07-23 2014-05-07 新动力等离子体株式会社 多工件处理室以及包括该多工件处理室的工件处理系统
JP5195676B2 (ja) 2008-08-29 2013-05-08 東京エレクトロン株式会社 成膜装置、基板処理装置、成膜方法及び記憶媒体
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KR101625078B1 (ko) * 2009-09-02 2016-05-27 주식회사 원익아이피에스 가스분사장치 및 이를 이용한 기판처리장치
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US8911826B2 (en) * 2012-08-02 2014-12-16 Asm Ip Holding B.V. Method of parallel shift operation of multiple reactors

Also Published As

Publication number Publication date
CN109244004B (zh) 2022-04-15
CN109244004A (zh) 2019-01-18
JP2016164964A (ja) 2016-09-08
KR101876616B1 (ko) 2018-07-09
TW201633422A (zh) 2016-09-16
KR101934237B1 (ko) 2018-12-31
TWI667720B (zh) 2019-08-01
KR20180079267A (ko) 2018-07-10
KR20160046302A (ko) 2016-04-28

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