TWI667720B - Substrate processing apparatus and substrate processing method - Google Patents

Substrate processing apparatus and substrate processing method Download PDF

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Publication number
TWI667720B
TWI667720B TW104133953A TW104133953A TWI667720B TW I667720 B TWI667720 B TW I667720B TW 104133953 A TW104133953 A TW 104133953A TW 104133953 A TW104133953 A TW 104133953A TW I667720 B TWI667720 B TW I667720B
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TW
Taiwan
Prior art keywords
gas
processing
substrate
substrate processing
pressure
Prior art date
Application number
TW104133953A
Other languages
English (en)
Chinese (zh)
Other versions
TW201633422A (zh
Inventor
高橋宏幸
風間和典
岩渕紀之
戶田聰
高橋哲朗
Original Assignee
日商東京威力科創股份有限公司
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Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW201633422A publication Critical patent/TW201633422A/zh
Application granted granted Critical
Publication of TWI667720B publication Critical patent/TWI667720B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45557—Pulsed pressure or control pressure
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07231—Techniques
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
TW104133953A 2014-10-20 2015-10-16 Substrate processing apparatus and substrate processing method TWI667720B (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2014-213887 2014-10-20
JP2014213887 2014-10-20
JP2015-036889 2015-02-26
JP2015036889 2015-02-26
JP2015-182489 2015-09-16
JP2015182489A JP6545054B2 (ja) 2014-10-20 2015-09-16 基板処理装置および基板処理方法

Publications (2)

Publication Number Publication Date
TW201633422A TW201633422A (zh) 2016-09-16
TWI667720B true TWI667720B (zh) 2019-08-01

Family

ID=56876708

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104133953A TWI667720B (zh) 2014-10-20 2015-10-16 Substrate processing apparatus and substrate processing method

Country Status (4)

Country Link
JP (1) JP6545054B2 (https=)
KR (2) KR101876616B1 (https=)
CN (1) CN109244004B (https=)
TW (1) TWI667720B (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6667412B2 (ja) * 2016-09-30 2020-03-18 東京エレクトロン株式会社 基板処理装置
JP6844263B2 (ja) * 2017-01-05 2021-03-17 東京エレクトロン株式会社 基板処理装置
JP7257813B2 (ja) * 2019-02-21 2023-04-14 東京エレクトロン株式会社 水蒸気処理装置及び水蒸気処理方法
KR102202463B1 (ko) * 2019-03-13 2021-01-14 세메스 주식회사 기판 처리 장치 및 방법
KR102800139B1 (ko) * 2019-12-30 2025-04-28 주성엔지니어링(주) 기판처리방법 및 기판처리장치
JP6815542B2 (ja) * 2020-02-04 2021-01-20 東京エレクトロン株式会社 基板処理装置
WO2022065114A1 (ja) * 2020-09-24 2022-03-31 東京エレクトロン株式会社 ガスを供給する装置、基板を処理するシステム、及びガスを供給する方法
JP7600018B2 (ja) * 2021-03-30 2024-12-16 東京エレクトロン株式会社 基板処理装置及び基板処理方法
CN117448796B (zh) * 2023-10-27 2026-03-24 北京北方华创微电子装备有限公司 一种控制方法、装置、半导体设备及计算机可读存储介质

Citations (1)

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US20110031214A1 (en) * 2009-08-06 2011-02-10 Jisoo Kim Vacuum processing chambers incorporating a moveable flow equalizer

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JPH10158843A (ja) * 1996-12-06 1998-06-16 Furukawa Electric Co Ltd:The 気相成長装置
JP2002110570A (ja) * 2000-10-04 2002-04-12 Asm Japan Kk 半導体製造装置用ガスラインシステム
US6755150B2 (en) * 2001-04-20 2004-06-29 Applied Materials Inc. Multi-core transformer plasma source
JP2003049278A (ja) * 2001-08-06 2003-02-21 Canon Inc 真空処理方法及び真空処理装置
US20060176928A1 (en) * 2005-02-08 2006-08-10 Tokyo Electron Limited Substrate processing apparatus, control method adopted in substrate processing apparatus and program
US20080006650A1 (en) * 2006-06-27 2008-01-10 Applied Materials, Inc. Method and apparatus for multi-chamber exhaust control
CN101779269B (zh) * 2008-07-23 2014-05-07 新动力等离子体株式会社 多工件处理室以及包括该多工件处理室的工件处理系统
JP5195676B2 (ja) 2008-08-29 2013-05-08 東京エレクトロン株式会社 成膜装置、基板処理装置、成膜方法及び記憶媒体
KR101625078B1 (ko) * 2009-09-02 2016-05-27 주식회사 원익아이피에스 가스분사장치 및 이를 이용한 기판처리장치
US20110265951A1 (en) * 2010-04-30 2011-11-03 Applied Materials, Inc. Twin chamber processing system
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Publication number Priority date Publication date Assignee Title
US20110031214A1 (en) * 2009-08-06 2011-02-10 Jisoo Kim Vacuum processing chambers incorporating a moveable flow equalizer

Also Published As

Publication number Publication date
CN109244004B (zh) 2022-04-15
CN109244004A (zh) 2019-01-18
JP2016164964A (ja) 2016-09-08
KR101876616B1 (ko) 2018-07-09
TW201633422A (zh) 2016-09-16
KR101934237B1 (ko) 2018-12-31
JP6545054B2 (ja) 2019-07-17
KR20180079267A (ko) 2018-07-10
KR20160046302A (ko) 2016-04-28

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