JP6545054B2 - Substrate processing apparatus and substrate processing method - Google Patents

Substrate processing apparatus and substrate processing method Download PDF

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JP6545054B2
JP6545054B2 JP2015182489A JP2015182489A JP6545054B2 JP 6545054 B2 JP6545054 B2 JP 6545054B2 JP 2015182489 A JP2015182489 A JP 2015182489A JP 2015182489 A JP2015182489 A JP 2015182489A JP 6545054 B2 JP6545054 B2 JP 6545054B2
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gas
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substrate processing
substrate
processing units
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JP2016164964A (en
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宏幸 ▲高▼橋
宏幸 ▲高▼橋
和典 風間
和典 風間
岩渕　紀之
紀之 岩渕
戸田　聡
聡 戸田
哲朗 ▲高▼橋
哲朗 ▲高▼橋
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Tokyo Electron Ltd
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Priority to TW104133953A priority patent/TWI667720B/en
Priority to US14/886,325 priority patent/US10460949B2/en
Priority to CN201510685548.9A priority patent/CN105529289B/en
Priority to CN201811000665.7A priority patent/CN109244004B/en
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Description

本発明は、被処理基板に処理を施す基板処理装置および基板処理方法に関する。   The present invention relates to a substrate processing apparatus and a substrate processing method for processing a target substrate.

半導体デバイスの製造においては、被処理基板である半導体ウエハ（以下単にウエハと記す）にエッチング処理や成膜処理等の各種の処理を繰り返し行って所望のデバイスを製造する。   In the manufacture of a semiconductor device, various processes such as an etching process and a film forming process are repeatedly performed on a semiconductor wafer (hereinafter simply referred to as a wafer) which is a target substrate to manufacture a desired device.

従来、このような基板処理を行う装置としては、被処理基板を一枚ずつ基板処理する枚葉式の処理装置が多用されている。しかしながら、処理装置にはスループットを向上させることが求められており、枚葉式の処理装置のプラットフォームを維持したまま一度に２枚以上の被処理基板に対して基板処理を施す処理装置も用いられている（例えば特許文献１）。   Conventionally, as an apparatus for performing such substrate processing, a single-wafer processing apparatus for processing substrates one by one is widely used. However, the processing apparatus is required to improve the throughput, and a processing apparatus for performing substrate processing on two or more substrates at a time while maintaining the platform of the single wafer processing apparatus is also used. (E.g., Patent Document 1).

特許文献１に記載された基板処理装置は、チャンバー内に、複数枚の被処理基板を載置する基板載置台を設け、複数の処理領域と、複数の処理領域を分離する分離領域とを基板載置台の円周方向に沿って交互に設置する。基板処理に際しては、基板載置台を回転させ、複数枚の被処理基板が“処理領域、分離領域、処理領域、分離領域…”というように順々にくぐりぬけさせることにより、複数枚の被処理基板に対して異なるガス条件の基板処理を施す。   In the substrate processing apparatus described in Patent Document 1, a substrate mounting table for mounting a plurality of substrates to be processed is provided in a chamber, and a plurality of processing areas and a separation area for separating a plurality of processing areas are substrates. Install alternately along the circumferential direction of the mounting table. At the time of substrate processing, the substrate mounting table is rotated, and a plurality of substrates to be processed are sequentially traversed like “processing region, separation region, processing region, separation region. Are treated with different gas conditions.

特開２０１０−８０９２４号公報Unexamined-Japanese-Patent No. 2010-80924

特許文献１においては、複数枚の被処理基板に対して異なるガス条件の基板処理を施すために、排気機構は、処理領域ごとに独立して別々に設けられている。このため、基板処理装置の製造コストが上昇してしまう。   In Patent Document 1, in order to perform substrate processing of different gas conditions on a plurality of substrates to be processed, exhaust mechanisms are provided separately and separately for each processing region. Therefore, the manufacturing cost of the substrate processing apparatus is increased.

本発明は、このような点に鑑みてなされたものであり、複数枚の被処理基板に対して複数の処理部でそれぞれ処理するにあたり、排気機構を共通化しつつ、異なるガス条件の基板処理を施すことができる基板処理装置および基板処理方法を提供することを課題とする。   The present invention has been made in view of such a point, and in processing a plurality of substrates to be processed by a plurality of processing units, substrate processing with different gas conditions is performed while sharing an exhaust mechanism. An object of the present invention is to provide a substrate processing apparatus and a substrate processing method that can be applied.

上記課題を解決するため、本発明の第１の観点は、真空雰囲気下で複数枚の被処理基板に所定の処理を施す基板処理装置であって、前記複数枚の被処理基板のそれぞれに対して基板処理を施す複数の処理部と、前記複数の処理部に対して処理ガスを独立に供給するガス供給機構と、前記複数の処理部内の処理ガスを一括して排気する共通の排気機構と、前記ガス供給機構および前記排気機構を制御する制御部と、を備え、前記制御部は、前記複数枚の被処理基板に対して基板処理を施す際、前記複数の処理部から処理ガスを共通に排気しつつ、前記複数の処理部の全てに対して処理ガスとして第１のガスを同一のガス条件で供給する第１のモードと、前記複数の処理部から処理ガスを一括して排気するように前記排気機構を制御しつつ、前記複数の処理部の一部に対しては前記第１のガスを供給し、前記複数の処理部の残りに対しては前記第１のガスとは異なる第２のガスを供給する第２のモードとを実行し、前記第２のモードの際に、前記複数の処理部における圧力差が生じることを阻止するように、前記ガス供給機構を制御することを特徴とする基板処理装置を提供する。 In order to solve the above-mentioned subject, the 1st viewpoint of the present invention is a substrate processing device which performs predetermined processing to a plurality of processed substrates under vacuum atmosphere, and is performed to each of a plurality of processed substrates. A plurality of processing units for performing substrate processing, a gas supply mechanism for independently supplying a processing gas to the plurality of processing units, and a common exhausting mechanism for collectively discharging the processing gases in the plurality of processing units A control unit configured to control the gas supply mechanism and the exhaust mechanism, the control unit sharing a processing gas from the plurality of processing units when performing substrate processing on the plurality of target substrates; A first mode for supplying a first gas as a processing gas under the same gas conditions to all of the plurality of processing units, and collectively exhausting the processing gas from the plurality of processing units while exhausting While controlling the exhaust mechanism A second mode in which the first gas is supplied to a part of the number of processing units, and a second gas different from the first gas is supplied to the rest of the plurality of processing units And controlling the gas supply mechanism to prevent a pressure difference in the plurality of processing units from being generated in the second mode .

上記第１の観点において、前記制御部は、前記第２のモードの際、前記複数の処理部の一部における圧力と前記複数の処理部の残りにおける圧力差が生じることを阻止するように、前記複数の処理部のいずれかに対する前記第２のガスの供給量を制御することが好ましい。 In the first aspect, the control unit is configured to prevent a pressure difference between a part of the plurality of processing units and a pressure difference among the remaining processing units during the second mode. It is preferable to control the supply amount of the second gas to any one of the plurality of processing units.

また、前記第２のガスは、不活性ガスおよび／または処理される被処理基板に対して非反応である非反応性ガスを用いることができる。   Further, as the second gas, an inert gas and / or a non-reactive gas which is non-reactive to the substrate to be treated can be used.

前記制御部は、前記第２のモードの際、前記複数の処理部の一部においては、前記被処理基板に対する処理ガスである第１のガスによる基板処理が続行させ、前記複数の処理部の残りにおいては、前記被処理基板に対する処理ガスである第１のガスの供給を停止させ、前記第２のガスを補完ガスとして供給させて基板処理を停止させるようにすることができる。   The control unit causes the substrate processing with the first gas, which is a processing gas for the processing target substrate, to continue in a part of the plurality of processing units in the second mode, and the control unit performs processing in the plurality of processing units. In the rest, the supply of the first gas as the processing gas to the substrate to be processed can be stopped, and the second gas can be supplied as a complementary gas to stop the substrate processing.

この場合に、前記制御部は、前記基板処理に先立って、前記複数の処理部を調圧ガスにより調圧するとともに圧力を安定化させる圧力安定化を実行させ、この圧力安定化の際に、前記調圧ガスの流量を、前記基板処理の前記第２のモードで前記複数の処理部の間で、処理ガスである前記第１のガスと補完ガスである前記第２のガスが逆拡散することを抑制可能な前記調圧ガスの前記排気機構へ向かう流れを形成できるような流量に制御することが好ましい。前記調圧ガスとして、前記基板処理の際に供給するガスの一部であって、基板処理が生じないものを用い、前記圧力安定化の際の前記調圧ガスの流量を、前記基板処理の時の流量よりも多くすればよく、前記圧力安定化の際の前記調圧ガスの流量を、前記基板処理の時の流量の３倍以上とすることが好ましい。   In this case, prior to the substrate processing, the control unit executes pressure stabilization for adjusting the pressure of the plurality of processing units with the pressure adjustment gas and stabilizing the pressure, and in the pressure stabilization, the control unit performs the pressure stabilization. The first gas as the processing gas and the second gas as the complementary gas are back-diffused between the plurality of processing units in the second mode of the substrate processing in the flow rate of the pressure adjustment gas. It is preferable to control to such a flow rate as to be able to form a flow toward the exhaust mechanism of the pressure regulating gas that can suppress the The pressure control gas is a part of the gas supplied during the substrate processing and does not cause substrate processing, and the flow rate of the pressure control gas during the pressure stabilization is the same as that of the substrate processing. The flow rate of the pressure adjustment gas at the time of the pressure stabilization should preferably be three times or more of the flow rate at the time of the substrate processing.

また、前記第２のガスとして、前記処理ガスの希釈ガスとして用いられるものを使用してもよい。   Moreover, you may use what is used as a dilution gas of the said process gas as said 2nd gas.

上記第１の観点において、前記複数の処理部のそれぞれは、一つの共通したチャンバー内に設けられ、前記排気機構は、前記一つの共通したチャンバー内に設けられた前記複数の処理部で共有される構成とすることができる。また、前記複数の処理部のそれぞれは、各々独立したチャンバー内に設けられ、前記排気機構は、前記独立したチャンバーで共有される構成とすることもできる。   In the first aspect, each of the plurality of processing units is provided in one common chamber, and the exhaust mechanism is shared by the plurality of processing units provided in the one common chamber. Can be configured. Further, each of the plurality of processing units may be provided in an independent chamber, and the exhaust mechanism may be shared by the independent chamber.

本発明の第２の観点は、複数枚の被処理基板のそれぞれに対して基板処理を施す複数の処理部と、前記複数の処理部に対してガスを独立に供給するガス供給機構と、前記複数の処理部内のガスを一括して排気する共通の排気機構とを備えた基板処理装置を用いて、真空雰囲気下で複数枚の被処理基板に所定の処理を施す基板処理方法であって、複数枚の被処理基板に対して基板処理を施す際、前記複数の処理部から処理ガスを共通に排気しつつ、前記複数の処理部の全てに対して処理ガスとして第１のガスを同一のガス条件で供給する第１のモードと、前記複数の処理部から処理ガスを一括して排気するように前記排気機構を制御しつつ、前記複数の処理部の一部に対しては前記第１のガスを供給し、前記複数の処理部の残りに対しては前記第１のガスとは異なる第２のガスを供給する第２のモードとを実行し、前記第２のモードの際、前記複数の処理部の一部における圧力と前記複数の処理部の残りにおける圧力差が生じることを阻止するように、前記複数の処理部の残りにおける前記第２のガスの供給量を制御することを特徴とする基板処理方法を提供する。 According to a second aspect of the present invention, there is provided a plurality of processing units for performing substrate processing on each of a plurality of substrates to be processed, a gas supply mechanism for independently supplying a gas to the plurality of processing units, and A substrate processing method for performing predetermined processing on a plurality of substrates to be processed in a vacuum atmosphere using a substrate processing apparatus provided with a common exhaust mechanism that exhausts gas in a plurality of processing units collectively. When a plurality of substrates to be processed are subjected to substrate processing, the processing gas is commonly exhausted from the plurality of processing units, and the first gas as the processing gas is the same for all of the plurality of processing units. The first mode for supplying under gas conditions and the exhaust mechanism are controlled so that the processing gas is exhausted at one time from the plurality of processing units, and the first for the plurality of processing units is controlled. Supply gas, and for the rest of the plurality of processing units Run a second mode for supplying a second different gas to the first gas, the time of the second mode, the pressure in the remainder of the pressure and the plurality of processing units in some of the plurality of processing units The substrate processing method is characterized by controlling the supply amount of the second gas in the rest of the plurality of processing units so as to prevent the occurrence of a difference .

第２の観点において、前記第２のガスは、不活性ガスおよび／または処理される被処理基板に対して非反応である非反応性ガスであることが好ましい。また、第２のモードの際、前記複数の処理部の一部においては、前記被処理基板に対する処理ガスである第１のガスによる基板処理が続行され、前記複数の処理部の残りにおいては、前記被処理基板に対する処理ガスである第１のガスの供給を停止し、前記第２のガスを補完ガスとして供給して基板処理を停止させるようにしてもよい。 In a second aspect, the second gas is preferably a non-reactive gas is non-reactive with respect to the target substrate being an inert gas and / or processing. Further, in the second mode, in part of the plurality of processing units, substrate processing with the first gas, which is a processing gas for the substrate to be processed, is continued, and in the rest of the plurality of processing units, The supply of the first gas as the processing gas to the substrate to be processed may be stopped, and the second gas may be supplied as a complementary gas to stop the substrate processing.

この場合に、前記基板処理に先立って、前記複数の処理部を調圧ガスにより調圧するとともに圧力を安定化させる圧力安定化工程を実行し、この圧力安定化工程の際に、前記調圧ガスの流量を、前記基板処理の前記第２のモードで前記複数の処理部の間で、処理ガスである前記第１のガスと補完ガスである前記第２のガスが逆拡散することを抑制可能な前記調圧ガスの前記排気機構へ向かう流れを形成できるような流量とすることが好ましい。前記調圧ガスとして、前記基板処理の際に供給するガスの一部であって、基板処理が生じないものを用い、前記圧力安定化工程の際の前記調圧ガスの流量を、前記基板処理の時の流量よりも多くすればよく、前記圧力安定化工程の際の前記調圧ガスの流量を、前記基板処理の時の流量の３倍以上とすることが好ましい。   In this case, prior to the substrate processing, a pressure stabilization step of adjusting the pressure of the plurality of processing units with the pressure adjustment gas and stabilizing the pressure is performed, and in the pressure stabilization step, the pressure adjustment gas is Between the plurality of processing units in the second mode of the substrate processing, it is possible to suppress reverse diffusion of the first gas as the processing gas and the second gas as the complementary gas between the plurality of processing units It is preferable that the flow rate be such that the flow of the pressure control gas toward the exhaust mechanism can be formed. The pressure control gas is a part of the gas supplied during the substrate processing and does not cause substrate processing, and the flow rate of the pressure control gas in the pressure stabilization step is the substrate processing. It is preferable that the flow rate of the pressure adjustment gas in the pressure stabilization step be three times or more of the flow rate at the time of the substrate processing.

また、前記第２のガスとして、前記第１のガスの希釈ガスとして用いられるものを使用してもよい。   Moreover, you may use what is used as a dilution gas of said 1st gas as said 2nd gas.

また、本発明のさらに他の観点は、コンピュータ上で動作し、基板処理装置を制御するためのプログラムが記憶された記憶媒体であって、前記プログラムは、実行時に、上記第２または第３の観点の基板処理方法が行われるように、コンピュータに前記基板処理装置を制御させることを特徴とする記憶媒体を提供する。   Further, still another aspect of the present invention is a storage medium which is operated on a computer and stores a program for controlling a substrate processing apparatus, wherein the program is executed when the second or third program is executed. There is provided a storage medium characterized by causing a computer to control the substrate processing apparatus such that the substrate processing method according to the aspect is performed.

本発明によれば、複数枚の被処理基板に対して基板処理を施す際、複数の処理部からガスを一括して排気するように排気機構を制御しつつ、複数の処理部に対して独立して処理ガスを供給するとともに、複数の処理部における圧力差が生じることを阻止するようにしたので、複数枚の被処理基板に対して複数の処理部でそれぞれ処理するにあたり、排気機構を共通化しつつ、異なるガス条件の基板処理を施すことができる。   According to the present invention, when performing substrate processing on a plurality of substrates to be processed, the exhaust mechanism is controlled to simultaneously exhaust the gas from the plurality of processing units while the plurality of processing units are independent. Since the processing gas is supplied and pressure differences in the plurality of processing units are prevented, the exhaust mechanism is common when processing the plurality of substrates to be processed by the plurality of processing units. While processing, substrate processing under different gas conditions can be performed.

本発明の一実施形態に係る基板処理装置の一例を示す断面図である。It is sectional drawing which shows an example of the substrate processing apparatus which concerns on one Embodiment of this invention. ガス供給機構１４の一システム構成例を示すシステム構成図である。FIG. 2 is a system configuration diagram showing an example of the system configuration of a gas supply mechanism 14; 本発明の一実施形態に係る基板処理装置による共通基板処理モードを概略的に示す図である。It is a figure showing roughly the common substrate processing mode by the substrate processing device concerning one embodiment of the present invention. 本発明の一実施形態に係る基板処理装置による独立基板処理モードを概略的に示す図である。It is a figure which shows roughly the independent substrate processing mode by the substrate processing apparatus which concerns on one Embodiment of this invention. 参考例に係る基板処理モードを概略的に示す図である。It is a figure showing roughly the substrate processing mode concerning a reference example. 図１の基板処理装置におけるシーケンスの一例を示す図である。It is a figure which shows an example of the sequence in the substrate processing apparatus of FIG. 図１の基板処理装置におけるシーケンスの他の例を示す図である。It is a figure which shows the other example of the sequence in the substrate processing apparatus of FIG. 図６のシーケンスの効果を説明するための図である。It is a figure for demonstrating the effect of the sequence of FIG. 一実施形態に係る基板処理装置のチャンバー構成の一例を概略的に示す図である。It is a figure showing roughly an example of the chamber composition of the substrate processing device concerning one embodiment. 一実施形態に係る基板処理装置のチャンバー構成の他例を概略的に示す図である。It is a figure which shows roughly the other example of the chamber structure of the substrate processing apparatus which concerns on one Embodiment.

以下、図面を参照しながら、本発明の実施の形態について説明する。   Hereinafter, embodiments of the present invention will be described with reference to the drawings.

＜基板処理装置＞
図１は、本発明の一実施形態に係る基板処理装置の一例を示す断面図である。なお、図１には、基板処理装置の一例として、化学的酸化物除去（Ｃｈｅｍｉｃａｌ Ｏｘｉｄｅ Ｒｅｍｏｖａｌ；ＣＯＲ）処理を行うＣＯＲ処理装置が示されている。なお、ＣＯＲ処理の典型的な例は、チャンバー内で、基板、例えば、シリコンウエハ表面に存在する酸化膜に対してＨＦガスを含むガス、およびＮＨ３ガスを含むガスを供給して基板処理を行い、シリコンウエハ表面から酸化膜を除去する処理である。 <Substrate processing apparatus>
FIG. 1 is a cross-sectional view showing an example of a substrate processing apparatus according to an embodiment of the present invention. Note that FIG. 1 shows a COR processing apparatus that performs chemical oxide removal (COR) processing as an example of a substrate processing apparatus. A typical example of the COR process is to supply a gas containing HF gas and a gas containing NH 3 gas to an oxide film present on the surface of a substrate, for example, a silicon wafer in a chamber to perform substrate processing. This process is performed to remove the oxide film from the surface of the silicon wafer.

図１に示すように、ＣＯＲ処理装置１００は、密閉構造のチャンバー１０を備えている。チャンバー１０は、例えば、アルミニウムまたはアルミニウム合金からなり、チャンバー本体５１と蓋部５２とによって構成されている。チャンバー本体５１は、側壁部５１ａと底部５１ｂとを有し、上部は開口となっており、この開口が蓋部５２で閉止される。側壁部５１ａと蓋部５２とは、シール部材５１ｃにより封止されて、チャンバー１０内の気密性が確保される。   As shown in FIG. 1, the COR processing apparatus 100 includes a chamber 10 of a closed structure. The chamber 10 is made of, for example, aluminum or an aluminum alloy, and is configured of a chamber body 51 and a lid 52. The chamber body 51 has a side wall 51 a and a bottom 51 b, and the upper portion is an opening, and the opening is closed by the lid 52. The side wall 51 a and the lid 52 are sealed by the sealing member 51 c to ensure the airtightness in the chamber 10.

チャンバー１０の内部には、複数枚の被処理基板に対して基板処理を施す２つの処理部１１ａ、１１ｂが設けられている。２つの処理部１１ａ、１１ｂのそれぞれには、基板載置台６１ａ、６１ｂが各々設けられている。基板載置台６１ａ、６１ｂには、被処理基板であるウエハＷａ、Ｗｂが１枚ずつ水平状態にて載置される。基板載置台６１ａ、６１ｂの上方には、処理ガスをチャンバー１０内に導入するためのガス導入部材１２ａ、１２ｂが設けられている。ガス導入部材１２ａ、１２ｂは蓋部５２の内側に取り付けられている。ガス導入部材１２ａと基板載置台６１ａ、およびガス導入部材１２ｂと基板載置台６１ｂは、それぞれ対向して設けられている。そして、ガス導入部材１２ａと基板載置台６１ａを囲むように円筒状をなす内壁７１ａが設けられており、ガス導入部材１２ｂと基板載置台６１ｂを囲むように円筒状をなす内壁７１ｂが設けられている。内壁７１ａ、７１ｂは、蓋部５２の上壁内側からチャンバー本体５１の底部５１ｂにかけて設けられており、これらの上部はそれぞれガス導入部材１２ａおよび１２ｂの側壁を構成している。ガス導入部材１２ａと基板載置台６１ａの間、およびガス導入部材１２ｂと基板載置台６１ｂの間の空間は、内壁７１ａ、７１ｂにより略密閉されウエハＷａ、Ｗｂに対して基板処理を施す処理空間Ｓが形成される。 Inside the chamber 10, two processing units 11a and 11b that perform substrate processing on a plurality of target substrates are provided. Substrate mounting bases 61a and 61b are respectively provided to the two processing units 11a and 11b. The wafers Wa and Wb, which are the substrates to be processed, are horizontally mounted one by one on the substrate mounting bases 61a and 61b. Gas introducing members 12 a and 12 b for introducing a processing gas into the chamber 10 are provided above the substrate mounting bases 61 a and 61 b. The gas introducing members 12 a and 12 b are attached to the inside of the lid 52. The gas introducing member 12a and the substrate mounting table 61a, and the gas introducing member 12b and the substrate mounting table 61b are provided to face each other. A cylindrical inner wall 71a is provided to surround the gas introducing member 12a and the substrate mounting table 61a, and a cylindrical inner wall 71b is provided to surround the gas introducing member 12b and the substrate mounting table 61b. There is. The inner walls 71a and 71b are provided from the inside of the upper wall of the lid 52 to the bottom 51b of the chamber main body 51, and the upper portions thereof constitute the side walls of the gas introducing members 12a and 12b. A space between the gas introduction member 12a and the substrate mounting table 61a, and a space between the gas introduction member 12b and the substrate mounting table 61b is substantially sealed by the inner walls 71a and 71b and a processing space S for applying the substrate processing to the wafers Wa and Wb. Is formed.

チャンバー１０の外部には、ガス導入部材１２ａ、１２ｂにガスを供給するガス供給機構１４と、チャンバー１０内を排気する排気機構１５と、ＣＯＲ処理装置１００を制御する制御部１６とが設けられている。チャンバー本体５１の側壁部５１ａには、外部との間でウエハＷを搬送するための搬入出口（図示せず）が設けられており、この搬入出口は、ゲートバルブ（図示せず）により開閉可能となっている。また、内壁７１ａ，７１ｂにも搬入出口（図示せず）が設けられており、この搬入出口はシャッター（図示せず）により開閉可能となっている。 Outside the chamber 10, a gas supply mechanism 14 for supplying gas to the gas introduction members 12a and 12b, an exhaust mechanism 15 for exhausting the inside of the chamber 10, and a control unit 16 for controlling the COR processing apparatus 100 are provided. There is. The side wall 51a of the chamber main body 51 is provided with a loading / unloading port (not shown) for transferring the wafer W with the outside, and the loading / unloading port can be opened and closed by a gate valve (not shown). It has become. Further, a loading / unloading port (not shown) is provided on the inner walls 71a, 71b , and the loading / unloading port can be opened and closed by a shutter (not shown).

処理部１１ａ、１１ｂはそれぞれ、略円状をなす。基板載置台６１ａ、６１ｂはそれぞれ、ベースブロック６２によって支持される。ベースブロック６２は、チャンバー本体５１の底部５１ｂに固定されている。基板載置台６１ａ、６１ｂそれぞれの内部にはウエハＷを温調する温度調節器６３が設けられている。温度調節器６３は、例えば温度調節用媒体（例えば水など）が循環する管路を備えており、管路内を流れる温度調節用媒体と熱交換が行なわれることにより、ウエハＷの温度制御がなされる。また、基板載置台６１ａ、６１ｂにはそれぞれ、ウエハＷを搬送する際に用いる複数の昇降ピン（図示せず）がウエハの載置面に対して突没可能に設けられている。   Each of the processing units 11a and 11b has a substantially circular shape. Each of the substrate mounting bases 61 a and 61 b is supported by the base block 62. The base block 62 is fixed to the bottom 51 b of the chamber body 51. A temperature controller 63 for controlling the temperature of the wafer W is provided in each of the substrate mounting bases 61a and 61b. The temperature controller 63 includes, for example, a pipe line through which a temperature control medium (for example, water or the like) circulates, and heat exchange with the temperature control medium flowing in the pipe allows temperature control of the wafer W to be performed. Is done. Further, on the substrate mounting bases 61a and 61b, a plurality of lift pins (not shown) used when transporting the wafer W are provided so as to be able to protrude and retract with respect to the wafer mounting surface.

ガス供給機構１４は、ＨＦガス、ＮＨ３ガス等の処理ガス、ＡｒガスやＮ２ガス等の不活性ガス（希釈ガス）をガス導入部材１２ａ、１２ｂを介して処理部１１ａ、１１ｂに対して供給するものであり、各ガスの供給源、供給配管、バルブ、およびマスフローコントローラも代表される流量制御器等を有している。 The gas supply mechanism 14 supplies a processing gas such as HF gas or NH 3 gas, or an inert gas (dilution gas) such as Ar gas or N 2 gas to the processing units 11 a and 11 b via the gas introduction members 12 a and 12 b. It is a supply, and has a gas flow source such as a gas supply source, a supply pipe, a valve, a mass flow controller, and the like.

図２はガス供給機構１４のシステム構成の一例を示すシステム構成図である。
図２に示すように、ガス供給機構１４は、ガスの供給源として、Ａｒガス供給源１４１、ＨＦガス供給源１４２、Ｎ２ガス供給源１４３、およびＮＨ３ガス供給源１４４を備えている。 FIG. 2 is a system configuration diagram showing an example of the system configuration of the gas supply mechanism 14.
As shown in FIG. 2, the gas supply mechanism 14 includes an Ar gas supply source 141, an HF gas supply source 142, an N 2 gas supply source 143, and an NH 3 gas supply source 144 as gas supply sources.

本例においては、ＨＦガス供給源１４２からのＨＦガスは、Ａｒガス供給源１４１からのＡｒガスによって希釈された後、ガス導入部材１２ａ、１２ｂへ供給される。また、ＮＨ３ガス供給源１４４からのＮＨ３ガスも同様に、Ｎ２ガス供給源１４３からのＮ２ガスによって希釈された後、ガス導入部材１２ａ、１２ｂへ供給される。 In this example, the HF gas from the HF gas supply source 142 is diluted by the Ar gas from the Ar gas supply source 141, and then supplied to the gas introduction members 12a and 12b. Similarly, NH 3 gas from the NH 3 gas supply source 144, after being diluted by the N 2 gas from the N 2 gas supply source 143 is supplied a gas introducing member 12a, to 12b.

ＨＦガスが通流するＨＦガス供給配管１４５は、２つのＨＦガス供給配管１４５ａ、１４５ｂに分岐され、各々ガス導入部材１２ａに接続される供給配管１４６ａ、およびガス導入部材１２ｂに接続される供給配管１４６ｂへと接続される。また、Ａｒガスが通流するＡｒガス供給配管１４７もまた、２つのＡｒガス供給配管１４７ａ、１４７ｂに分岐され、各々ＨＦガス供給配管１４５ａ、１４５ｂに接続される。これにより、ＨＦガスはＡｒガスによって希釈することが可能となる。   The HF gas supply pipe 145 through which the HF gas flows is branched into two HF gas supply pipes 145a and 145b, and a supply pipe 146a connected to the gas introduction member 12a and a supply pipe connected to the gas introduction member 12b, respectively. Connected to 146b. Further, the Ar gas supply pipe 147 through which the Ar gas flows is also branched into two Ar gas supply pipes 147a and 147b, and is connected to the HF gas supply pipes 145a and 145b, respectively. This enables the HF gas to be diluted by Ar gas.

同じくＮＨ３ガスが通流するＮＨ３ガス供給配管１４８も、２つのＮＨ３ガス供給配管１４８ａ、１４８ｂに分岐され、各々供給配管１４６ａ、１４６ｂへと接続される。Ｎ２ガスが通流するＮ２ガス供給配管１４９もまた、２つのＮ２ガス供給配管１４９ａ、１４９ｂに分岐され、各々ＮＨ３ガス供給配管１４８ａ、１４８ｂに接続される。これにより、ＮＨ３ガスはＮ２ガスによって希釈することが可能となる。 Also NH 3 gas supply line 148 which is also the NH 3 gas is flowing, the two NH 3 gas supply pipe 148a, is branched into 148b, are connected respectively supply pipe 146a, and the 146b. Also N 2 gas supply pipe 149 N 2 gas flowing Further, two of the N 2 gas supply pipe 149a, is branched into 149 b, are connected respectively NH 3 gas supply pipe 148a, to 148b. Thus, the NH 3 gas can be diluted by the N 2 gas.

なお、ＡｒガスおよびＮ２ガスは、希釈ガスとして用いられる他、パージガスや後述する圧力調整のための補完ガスとしても用いられる。 In addition to being used as a dilution gas, Ar gas and N 2 gas are also used as a purge gas or a complementing gas for pressure adjustment described later.

ＨＦガス供給配管１４５ａ、１４５ｂ、Ａｒガス供給配管１４７ａ、１４７ｂ、ＮＨ３ガス供給配管１４８ａ、１４８ｂ、ならびにＮ２ガス供給配管１４９ａ、１４９ｂのそれぞれには、マスフローコントローラ（以下ＭＦＣ）１５０ａ〜１５０ｈ、および供給配管を開閉する開閉バルブ１５１ａ〜１５１ｈが設けられている。これらＭＦＣ１５０ａ〜１５０ｈ、ならびに開閉バルブ１５１ａ〜１５１ｈはそれぞれ、制御部１６によって独立して制御することが可能とされている。 Mass flow controllers (hereinafter referred to as MFCs) 150a to 150h and HF gas supply pipes 145a and 145b, Ar gas supply pipes 147a and 147b, NH 3 gas supply pipes 148a and 148b, and N 2 gas supply pipes 149a and 149b, respectively. The on-off valves 151a-151h which open and close supply piping are provided. The MFCs 150 a to 150 h and the on-off valves 151 a to 151 h can be independently controlled by the control unit 16.

例えば、２つの処理部１１ａ，１１ｂにおいて通常のＣＯＲ処理を行う場合、ガス導入部材１２ａ、１２ｂのそれぞれには、ＨＦガスおよびＮＨ３ガスの両方が供給される。この場合には、制御部１６によって、開閉バルブが以下の“ケースａ”のように全てオープンになるように制御される。 For example, two processing units 11a, when performing normal COR processing in 11b, the gas introducing member 12a, each of 12b, both HF gas and NH 3 gas is supplied. In this case, the control unit 16 controls the on-off valves to be all open as in the following “case a”.

［ケースａ］
・ガス導入部材１２ａへの供給系
開閉バルブ１５１ａ（Ａｒ） オープン
開閉バルブ１５１ｃ（ＨＦ） オープン
開閉バルブ１５１ｅ（Ｎ２） オープン
開閉バルブ１５１ｇ（ＮＨ３） オープン
・ガス導入部材１２ｂへの供給系
開閉バルブ１５１ｂ（Ａｒ） オープン
開閉バルブ１５１ｄ（ＨＦ） オープン
開閉バルブ１５１ｆ（Ｎ２） オープン
開閉バルブ１５１ｈ（ＮＨ３） オープン [Case a]
・ Supply system to gas introduction member 12a Opening and closing valve 151a (Ar) opening opening and closing valve 151c (HF) opening opening and closing valve 151e (N 2 ) opening opening and closing valve 151g (NH 3 ) opening ・ Supply system to gas introducing member 12b Opening and closing valve 151b (Ar) open on-off valve 151 d (HF) open on-off valve 151 f (N 2 ) open on-off valve 151 h (NH 3 ) open

一方、ガス導入部材１２ａ、１２ｂを介して処理部１１ａ，１１ｂに供給するガス条件が異なるように制御することも可能である。例えば、以下の“ケースｂ”、
“ケースｃ”のように制御することも可能である。 On the other hand, it is also possible to control so that the gas conditions supplied to processing parts 11a and 11b via gas introduction members 12a and 12b differ. For example, “case b” below
It is also possible to control like "case c".

［ケースｂ］
・ガス導入部材１２ａへの供給系
開閉バルブ１５１ａ（Ａｒ） オープン
開閉バルブ１５１ｃ（ＨＦ） オープン
開閉バルブ１５１ｅ（Ｎ２） オープン
開閉バルブ１５１ｇ（ＮＨ３） オープン
・ガス導入部材１２ｂへの供給系
開閉バルブ１５１ｂ（Ａｒ） オープン
開閉バルブ１５１ｄ（ＨＦ） クローズ
開閉バルブ１５１ｆ（Ｎ２） オープン
開閉バルブ１５１ｈ（ＮＨ３） クローズ [Case b]
・ Supply system to gas introduction member 12a Opening and closing valve 151a (Ar) opening opening and closing valve 151c (HF) opening opening and closing valve 151e (N 2 ) opening opening and closing valve 151g (NH 3 ) opening ・ Supply system to gas introducing member 12b Opening and closing valve 151b (Ar) open on-off valve 151 d (HF) closed on-off valve 151 f (N 2 ) open on-off valve 151 h (NH 3 ) closed

［ケースｃ］
・ガス導入部材１２ａへの供給系
開閉バルブ１５１ａ（Ａｒ） オープン
開閉バルブ１５１ｃ（ＨＦ） クローズ
開閉バルブ１５１ｅ（Ｎ２） オープン
開閉バルブ１５１ｇ（ＮＨ３） クローズ
・ガス導入部材１２ｂへの供給系
開閉バルブ１５１ｂ（Ａｒ） オープン
開閉バルブ１５１ｄ（ＨＦ） オープン
開閉バルブ１５１ｆ（Ｎ２） オープン
開閉バルブ１５１ｈ（ＮＨ３） オープン
つまり、ケースｂは、ケースａの状態から、開閉バルブ１５１ｄおよび開閉バルブ１５１ｈをクローズして、ガス導入部材１２ｂへは、処理ガスであるＨＦガスおよびＮＨ３ガスの供給が停止され、ＡｒガスおよびＮ２ガスのみが供給されるようにし、ガス導入部材１２ａについては引き続処理ガスであるＨＦガスおよびＮＨ３ガスが供給されるようにしており、ケースｃはその逆に、ガス導入部材１２ａへのＨＦガスおよびＮＨ３ガスの供給が停止され、ガス導入部材１２ｂについては引き続処理ガスであるＨＦガスおよびＮＨ３ガスが供給されるようにしている。 [Case c]
Supply system to gas introduction member 12a on-off valve 151a (Ar) open on-off valve 151c (HF) closed on-off valve 151e (N 2 ) open on-off valve 151g (NH 3 ) closed supply system on gas introduction member 12b on-off valve 151b (Ar) open on-off valve 151 d (HF) open on-off valve 151 f (N 2 ) open on-off valve 151 h (NH 3 ) open That is, case b closes on-off valve 151 d and on-off valve 151 h from the state of case a. The supply of HF gas and NH 3 gas as the processing gas is stopped and only Ar gas and N 2 gas are supplied to the gas introducing member 12 b, and the gas introducing member 12 a is continuously treated with the processing gas. there HF gas and NH 3 gas is supplied Unishi and, case c is Conversely, the supply of HF gas and NH 3 gas into the gas introduction member 12a is stopped, HF gas and NH 3 gas is supplied for the gas introducing member 12b is continue the process gas To be done.

このため、ケースｂでは、ガス導入部材１２ａからは処理部１１ａに対してＨＦガスおよびＮＨ３ガスがそれぞれ不活性ガスであるＡｒガスおよびＮ２ガスとともに供給される一方、ガス導入部材１２ｂからは処理部１１ｂに対して不活性ガスであるＡｒガスおよびＮ２ガスのみが供給され、ケースｃでは、その逆に、ガス導入部材１２ｂからは処理部１１ｂに対してＨＦガスおよびＮＨ３ガスがそれぞれ不活性ガスであるＡｒガスおよびＮ２ガスとともに供給される一方、ガス導入部材１２ａからは処理部１１ａに対して不活性ガスであるＡｒガスおよびＮ２ガスのみが供給されというように、処理の際中に、処理部１１ａと処理部１１ｂとに対して、同時に異なったガス条件とすることが可能となる。このようなバルブ制御による基板処理モードの詳細については後述する。 Therefore, in the case b, the HF gas and the NH 3 gas are supplied from the gas introducing member 12a to the processing unit 11a together with the inert gas Ar gas and N 2 gas, respectively, while the gas introducing member 12b Only Ar gas and N 2 gas which is an inert gas are supplied to the processing unit 11 b, and in the case c, the HF gas and NH 3 gas are respectively supplied to the processing unit 11 b from the gas introducing member 12 b. While being supplied together with the inert gas Ar gas and N 2 gas, the gas introduction member 12 a supplies only the inert gas Ar gas and N 2 gas to the processing section 11 a, so that During the processing, it is possible to simultaneously set different gas conditions for the processing unit 11a and the processing unit 11b. The details of the substrate processing mode by such valve control will be described later.

ガス導入部材１２ａ、１２ｂは、ガス供給機構１４からのガスをチャンバー１０内に導入し、処理部１１ａ、１１ｂに対して供給するためのものである。ガス導入部材１２ａ、１２ｂはそれぞれ、内部にガス拡散空間６４を有し、全体形状が円筒状をなしている。ガス導入部材１２ａ、１２ｂの上面にはチャンバー１０の上壁からつながるガス導入孔６５が形成され、底面にガス拡散空間６４につながる多数のガス吐出孔６６を有している。そして、ガス供給機構１４から供給されたＨＦガス、ＮＨ３ガス等のガスが、ガス導入孔６５を経てガス拡散空間６４に至り、ガス拡散空間６４で拡散され、ガス吐出孔６６から均一にシャワー状に吐出される。すなわち、ガス導入部材１２ａ、１２ｂは、ガスを分散して吐出するガス分散ヘッド（シャワーヘッド）として機能する。なお、ガス導入部材１２ａ、１２ｂは、ＨＦガスとＮＨ３ガスとを別個の流路でチャンバー１０内に吐出するポストミックスタイプであってもよい。 The gas introducing members 12a and 12b are for introducing the gas from the gas supply mechanism 14 into the chamber 10 and supplying the gas to the processing units 11a and 11b. Each of the gas introducing members 12a and 12b has a gas diffusion space 64 inside, and the entire shape is cylindrical. A gas introduction hole 65 connected to the upper wall of the chamber 10 is formed on the upper surface of the gas introduction members 12a and 12b, and a plurality of gas discharge holes 66 connected to the gas diffusion space 64 are provided on the bottom surface. Then, a gas such as HF gas or NH 3 gas supplied from the gas supply mechanism 14 reaches the gas diffusion space 64 through the gas introduction hole 65, is diffused in the gas diffusion space 64, and uniformly showers from the gas discharge hole 66. It is discharged in the form of That is, the gas introducing members 12a and 12b function as a gas dispersion head (shower head) that disperses and discharges the gas. The gas introducing members 12a and 12b may be of a post-mix type that discharges the HF gas and the NH 3 gas into the chamber 10 in separate flow paths.

排気機構１５は、チャンバー１０の底部５１ｂに形成された排気口（図示せず）に繋がる排気配管１０１を有しており、さらに、排気配管１０１に設けられた、チャンバー１０内の圧力を制御するための自動圧力制御弁（ＡＰＣ）１０２およびチャンバー１０内を排気するための真空ポンプ１０３を有している。排気口は、内壁７１ａ、７１ｂの外側に設けられており、内壁７１ａ、７１ｂの基板載置台６１ａ、６１ｂよりも下の部分には、排気機構１５により処理部１１ａ、１１ｂの両方から排気可能なように、多数のスリットが形成されている。これにより、排気機構１５により処理部１１ａ、１１ｂ内が一括して排気される。また、ＡＰＣ１０２、および真空ポンプ１０３は、処理部１１ａ、１１ｂで共有される。   The exhaust mechanism 15 has an exhaust pipe 101 connected to an exhaust port (not shown) formed in the bottom 51 b of the chamber 10, and further controls the pressure in the chamber 10 provided in the exhaust pipe 101. Automatic pressure control valve (APC) 102 and a vacuum pump 103 for evacuating the chamber 10. The exhaust port is provided on the outside of the inner walls 71a and 71b, and can be exhausted from both of the processing units 11a and 11b by the exhaust mechanism 15 in a portion below the substrate mounting bases 61a and 61b of the inner walls 71a and 71b. As such, a large number of slits are formed. Thereby, the insides of the processing units 11a and 11b are collectively evacuated by the exhaust mechanism 15. The APC 102 and the vacuum pump 103 are shared by the processing units 11a and 11b.

また、チャンバー１０内の圧力を計測するため、チャンバー１０の底部５１ｂから排気空間６８へ挿入されるように、圧力計として高圧力用のキャパシタンスマノメータ１０５ａおよび低圧力用のキャパシタンスマノメータ１０５ｂがそれぞれ設けられている。自動圧力制御弁（ＡＰＣ）１０２の開度は、キャパシタンスマノメータ１０５ａまたは１０５ｂにより検出された圧力に基づいて制御される。   In order to measure the pressure in the chamber 10, a high pressure capacitance manometer 105a and a low pressure capacitance manometer 105b are provided as pressure gauges so as to be inserted from the bottom 51b of the chamber 10 into the exhaust space 68. ing. The opening degree of the automatic pressure control valve (APC) 102 is controlled based on the pressure detected by the capacitance manometer 105a or 105b.

制御部１６は、ＣＯＲ処理装置１００の各構成部を制御するマイクロプロセッサ（コンピュータ）を備えたプロセスコントローラ１６１を有している。プロセスコントローラ１６１には、オペレータがＣＯＲ処理装置１００を管理するためにコマンドの入力操作等を行うキーボードやタッチパネルディスプレイ、ＣＯＲ処理装置１００の稼働状況を可視化して表示するディスプレイ等を有するユーザーインターフェース１６２が接続されている。また、プロセスコントローラ１６１には、ＣＯＲ処理装置１００で実行される各種処理をプロセスコントローラ１６１の制御にて実現するための制御プログラムや処理条件に応じてＣＯＲ処理装置１００の各構成部に所定の処理を実行させるための制御プログラムである処理レシピや、各種データベース等が格納された記憶部１６３が接続されている。レシピは記憶部１６３の中の適宜の記憶媒体（図示せず）に記憶されている。そして、必要に応じて、任意のレシピを記憶部１６３から呼び出してプロセスコントローラ１６１に実行させることで、プロセスコントローラ１６１の制御下で、ＣＯＲ処理装置１００での所望の処理が行われる。   The control unit 16 has a process controller 161 including a microprocessor (computer) that controls each component of the COR processing apparatus 100. The process controller 161 has a user interface 162 having a keyboard and a touch panel display on which an operator performs command input operation and the like to manage the COR processing apparatus 100, and a display for visualizing and displaying the operation status of the COR processing apparatus 100. It is connected. In addition, the process controller 161 performs predetermined processing in each component of the COR processing apparatus 100 according to a control program and processing conditions for realizing various processing executed by the COR processing apparatus 100 by control of the process controller 161. A storage unit 163 is connected, which stores a processing recipe, which is a control program for executing the program, and various databases. The recipe is stored in an appropriate storage medium (not shown) in the storage unit 163. Then, by calling an arbitrary recipe from the storage unit 163 and causing the process controller 161 to execute the desired recipe, desired processing in the COR processing apparatus 100 is performed under the control of the process controller 161.

また、本実施形態において、制御部１６は、ガス供給機構１４のＭＦＣ１５０ａ〜１５０ｈ、ならびに開閉バルブ１５１ａ〜１５１ｈを上述のように独立に制御することに大きな特徴を有する。   Further, in the present embodiment, the control unit 16 has a major feature in independently controlling the MFCs 150 a to 150 h and the on-off valves 151 a to 151 h of the gas supply mechanism 14 as described above.

＜基板処理動作＞
次に、このような基板処理装置における基板処理動作について説明する。
図３Ａは一実施形態に係るＣＯＲ処理装置１００による基板処理動作の一例を概略的に示す図、図３Ｂは一実施形態に係るＣＯＲ処理装置１００による基板処理動作の他の例を概略的に示す図である。 <Substrate processing operation>
Next, a substrate processing operation in such a substrate processing apparatus will be described.
FIG. 3A schematically shows an example of the substrate processing operation by the COR processing apparatus 100 according to an embodiment, and FIG. 3B schematically shows another example of the substrate processing operation by the COR processing apparatus 100 according to the embodiment. FIG.

表面にエッチング対象膜（例えばＳｉＯ２膜）が形成された２枚のウエハＷa、Ｗｂをチャンバー１０内の処理部１１ａおよび処理部１１ｂ内に搬入し、それぞれ基板載置台６１ａおよび基板載置台６１ｂ上に載置する。そして、排気機構１５によりチャンバー１０内を所定の圧力に調整し、圧力を安定させる圧力安定化工程の後、基板処理工程を実施する。処理部１１ａ、１１ｂは排気機構１５を共有しているので、圧力安定化工程および基板処理工程の際の圧力調整は、共通の自動圧力制御弁（ＡＰＣ）１０２により行う。 The two wafers Wa and Wb having etching target films (for example, SiO 2 films) formed on the surface are carried into the processing unit 11a and the processing unit 11b in the chamber 10, respectively on the substrate mounting table 61a and the substrate mounting table 61b. Place on And, the adjusting the chamber 10 to a predetermined pressure by exhaust mechanism 15, after the pressure stabilization step to stabilize the pressure, performing the substrate processing process. Since the processing units 11a and 11b share the exhaust mechanism 15, pressure adjustment in the pressure stabilization step and the substrate processing step is performed by the common automatic pressure control valve (APC) 102.

基板処理工程は、図３Ａに示す共通基板処理モード、または図３Ｂに示す独立基板処理モードにより行われる。   The substrate processing process is performed in the common substrate processing mode shown in FIG. 3A or the independent substrate processing mode shown in FIG. 3B.

（共通基板処理モード）
図３Ａに示す状態は、共通基板処理モードでの処理を示すものである。共通基板処理モードは、ウエハＷａ、Ｗｂに対して同じガス条件で処理をしているモードである。この共通基板処理モードにより、処理部１１ａ、１１ｂの両方においてＣＯＲ処理が行われる。このモードにおいては、開閉バルブ１５１ａ〜１５１ｈの状態は、上述したケースａとされる。これにより、図３Ａに示すように、ウエハＷａ、Ｗｂには、ガス導入部材１２ａ、１２ｂからＨＦガスおよびＮＨ３ガスが、それぞれ不活性ガスであるＡｒガスおよびＮ２ガスで希釈された状態で供給され、ウエハＷａ、Ｗｂに対して同じ基板処理がなされる。 (Common substrate processing mode)
The state shown in FIG. 3A shows processing in the common substrate processing mode. The common substrate processing mode is a mode in which the wafers Wa and Wb are processed under the same gas conditions. In the common substrate processing mode, the COR processing is performed in both of the processing units 11a and 11b. In this mode, the states of the on-off valves 151a to 151h are the case a described above. Thus, as shown in FIG. 3A, the wafer Wa, the Wb, the gas introducing member 12a, HF gas and NH 3 gas from 12b is in a state of being diluted with Ar gas and N 2 gas is an inert gas, respectively The same substrate processing is performed on the wafers Wa and Wb.

（独立基板処理モード）
図３Ｂに示す状態は、独立基板処理モードでの処理を示すものである。独立基板処理モードは、ウエハＷａ、Ｗｂに対して異なったガス条件で処理をしているモードである。このモードにおいては、開閉バルブ１５１ａ〜１５１ｈの状態は、例えば、上述したケースｂとされる。これにより、図３Ｂに示すように、処理部１１ａのウエハＷａには、ガス導入部材１２ａからＨＦガスおよびＮＨ３ガスがそれぞれＡｒガスおよびＮ２ガスに希釈された状態で供給され、処理部１１ｂのウエハＷｂには、ガス導入部材１２ｂからＡｒガスおよびＮ２ガスのみが供給され、ウエハＷａ、Ｗｂに対して異なった基板処理がなされる。すなわち、処理部１１ａにおいては、ウエハＷａに対するＨＦガスおよびＮＨ３ガスによる処理が続行される一方、処理部１１ｂにおいては、ウエハＷｂに対するＨＦガスおよびＮＨ３ガスの供給が停止される。なお、この場合に、ガス導入部材１２ｂから供給される不活性ガスとしてはＡｒガスおよびＮ２ガスの一方であってもよい。 (Independent substrate processing mode)
The state shown in FIG. 3B shows processing in the independent substrate processing mode. The independent substrate processing mode is a mode in which the wafers Wa and Wb are processed under different gas conditions. In this mode, the states of the on-off valves 151a to 151h are, for example, the case b described above. Thereby, as shown in FIG. 3B, the HF gas and the NH 3 gas are supplied from the gas introduction member 12a to the wafer Wa of the processing unit 11a in a state of being diluted with Ar gas and N 2 gas respectively, and the processing unit 11b To the wafer Wb, only Ar gas and N 2 gas are supplied from the gas introduction member 12b, and different substrate processing is performed on the wafers Wa and Wb. That is, while the processing of the wafer Wa with the HF gas and the NH 3 gas is continued in the processing unit 11a, the supply of the HF gas and the NH 3 gas to the wafer Wb is stopped in the processing unit 11b. In this case, one of Ar gas and N 2 gas may be used as the inert gas supplied from the gas introduction member 12 b.

なお、独立基板処理モードは、図３Ｂとは逆に、処理部１１ｂにおいては、ウエハＷｂに対するＨＦガスおよびＮＨ３ガスによる処理が続行される一方、処理部１１ａにおいては、ウエハＷａに対するＨＦガスおよびＮＨ３ガスの供給が停止される場合にも適用され、開閉バルブ１５１ａ〜１５１ｈの状態は、例えば、上述したケースｃとされる。 In the independent substrate processing mode, contrary to FIG. 3B, in the processing unit 11b, the processing with the HF gas and the NH 3 gas on the wafer Wb is continued, while in the processing unit 11a, the HF gas and the wafer Wa are processed. The present invention is also applied when the supply of the NH 3 gas is stopped, and the state of the on-off valves 151a to 151h is, for example, the case c described above.

独立基板処理モードは、上記共通基板処理モードで処理部１１ａ、１１ｂで同じガス条件でＣＯＲ処理を行った後、例えば、処理部１１ｂにおけるＣＯＲ処理を先に終了させたい場合に有効に用いることができる。   In the independent substrate processing mode, after performing COR processing under the same gas conditions in the processing units 11a and 11b in the common substrate processing mode, for example, effectively using COR processing in the processing unit 11b in advance. it can.

独立基板処理モードを適用して、処理部１１ｂのＨＦガスおよびＮＨ３ガスを停止して処理を停止する際に、例えば、図４に示す参考例のように、ガス導入部材１２ｂから処理部１１ｂへのガスの供給を止めてしまうことも考えられる。しかし、排気機構１５は処理部１１ａ、１１ｂで共通であり、単一のＡＰＣで圧力制御しているため、ガス導入部材１２ａからのガスの供給を続けながら、ガス導入部材１２ｂからのガスの供給を止めてしまうと、処理部１１ａと処理部１１ｂとの間には圧力差が生じ、処理部１１ａ、１１ｂの処理空間Ｓが略密閉空間であっても、ガス導入部材１２ａからのガスが内壁７１ａ、７１ｂの下部のスリットを介して逆流し、処理部１１ｂへと流れ込んでしまう。このため、処理部１１ｂにおいては、ウエハＷｂに対するＨＦガスおよびＮＨ３ガスによる処理を完全に停止させることが困難となってしまう。このため、独立基板処理モードでは、図３Ｂに示すように、ガス導入部材１２ｂからＡｒガスおよびＮ２ガスの供給を継続しているが、これらの流量が共通基板処理モードの際と同じ流量であれば、トータル流量が減少したことになるので、やはり圧力差が生じ、それによる逆流が生じ、処理を完全に停止させることが困難となる。 When stopping the processing by stopping the HF gas and the NH 3 gas of the processing unit 11b by applying the independent substrate processing mode, for example, as shown in FIG. 4, the processing unit 11b is processed from the gas introducing member 12b. It is also conceivable to stop the supply of gas to it. However, since the exhaust mechanism 15 is common to the processing units 11a and 11b and pressure control is performed by a single APC, the gas supply from the gas introduction member 12b is continued while the gas supply from the gas introduction member 12a is continued. If a pressure difference is generated between the processing unit 11a and the processing unit 11b and the processing space S of the processing units 11a and 11b is a substantially sealed space, the gas from the gas introducing member 12a is an inner wall. It flows back to the processing part 11b by flowing back through the slits in the lower part of 71a and 71b. Therefore, in the processing unit 11b, it is difficult to completely stop the processing of the wafer Wb with the HF gas and the NH 3 gas. For this reason, in the independent substrate processing mode, as shown in FIG. 3B, the supply of Ar gas and N 2 gas is continued from the gas introduction member 12b, but these flow rates are the same as those in the common substrate processing mode. If this is the case, the total flow rate is reduced, so that a pressure difference also occurs, which causes backflow and makes it difficult to stop the process completely.

そこで、本実施形態においては、独立基板処理モードで処理部１１ａと処理部１１ｂに対して異なるガス条件で処理を行う際に、処理部１１ａと処理部１１ｂとの間に圧力差が生じることを阻止するように、ガス供給機構１４を制御する。   Therefore, in the present embodiment, when processing is performed on the processing unit 11a and the processing unit 11b under different gas conditions in the independent substrate processing mode, a pressure difference is generated between the processing unit 11a and the processing unit 11b. The gas supply mechanism 14 is controlled to block.

例えば、制御部１６は、開閉バルブ１５１ｄおよび１５１ｈを閉じてＨＦガスおよびＮＨ３ガスのガス導入部材１２ｂへの供給を停止しつつ、開閉バルブ１５１ｂおよび１５１ｆは開いたままとして、ＭＦＣ１５０ｂおよび１５０ｆにより、ＡｒガスおよびＮ２ガスの流量を増加させ、処理部１１ａと処理部１１ｂとの間の圧力差が生じることを阻止するように、好ましくは処理部１１ａの圧力と処理部１１ｂの圧力とが等しくなるようにガス供給機構を制御することが可能となる。すなわち、ＡｒガスおよびＮ２ガスを圧力調整用の補完ガスとして用いる。 For example, the control unit 16 closes the on-off valves 151d and 151h to stop the supply of the HF gas and the NH 3 gas to the gas introducing member 12b, while keeping the on-off valves 151b and 151f open, by the MFCs 150b and 150f. Preferably, the pressure of the processing unit 11a and the pressure of the processing unit 11b are equal so as to increase the flow rates of Ar gas and N 2 gas and prevent the pressure difference between the processing unit 11a and the processing unit 11b from being generated. It is possible to control the gas supply mechanism to become That is, Ar gas and N 2 gas are used as complementary gases for pressure control.

このように、処理部１１ａ、１１ｂのうち、基板処理を停止させたい処理部については、単に処理ガスを止めるのではなく、例えば、不活性ガスを圧力調整のための補完ガスとして供給し、圧力調整を行う。これにより、１つの排気機構１５によって処理部１１ａ、１１ｂからガスを共通に排気したとしても、処理部１１ａ、１１ｂ相互間でのガスの流入を抑制することができる。   As described above, among the processing units 11a and 11b, for the processing units for which the substrate processing is desired to be stopped, the processing gas is not merely stopped but, for example, the inert gas is supplied as a complementary gas for pressure adjustment. Make adjustments. Thereby, even if the gas is commonly exhausted from the processing units 11a and 11b by one exhaust mechanism 15, the inflow of gas between the processing units 11a and 11b can be suppressed.

（処理シーケンスの一例）
本実施形態における処理シーケンスの一例を図５を参照して説明する。
最初に開閉バルブ１５１ａ，１５１ｂ，１５１ｅ，１５１ｆ，１５１ｇ，１５１ｈを開いて、処理部１１ａ，１１ｂの両方に、Ａｒガス、Ｎ２ガス、ＮＨ３ガスを所定流量で、かつ処理部１１ａ，１１ｂで同じ流量になるように供給して所定の圧力に調整し、圧力を安定化させる（圧力安定化工程Ｓ１）。 (Example of processing sequence)
An example of the processing sequence in this embodiment will be described with reference to FIG.
First, open and close the on-off valves 151a, 151b, 151e, 151f, 151g, and 151h, and Ar gas, N 2 gas, NH 3 gas at a predetermined flow rate for both the processing units 11a and 11b and at the processing units 11a and 11b. It supplies so that it may become the same flow volume, it adjusts to a predetermined pressure, and pressure is stabilized (pressure stabilization process S1).

圧力が安定した時点で、基板処理を開始する（基板処理工程Ｓ２）。基板処理工程Ｓ２では、最初、Ａｒガス、Ｎ２ガス、ＮＨ３ガスを流したまま、開閉バルブ１５１ｃ，１５１ｄを開いてＨＦガスを供給し、処理部１１ａ，１１ｂの両方において、ＨＦガスとＮＨ３ガスによるＣＯＲ処理が行われる（共通基板処理モードＳ２−１）。そして、処理部１１ｂでのＣＯＲ処理が先に終了した場合、処理部１１ａによるＣＯＲ処理を継続したまま、開閉バルブ１５１ｄ，１５１ｈを閉じて処理部１１ｂへのＨＦガスおよびＮＨ３の供給を停止するとともに、ＭＦＣ１５０ｂ，１５０ｆにより、処理部１１ｂへのＡｒガス流量およびＮ２ガス流量を増加させる（独立基板処理モードＳ２−２）。流量増加分のＡｒガスおよびＮ２ガスは、処理部１１ａと処理部１１ｂとで圧力差が生じることを阻止する補完ガスとして機能する。この際のＡｒガスおよびＮ２ガスの増加分（補完ガス流量）は、ＨＦガスおよびＮＨ３の供給を停止したことによる流量減少分に相当する量であることが好ましい。 When the pressure is stabilized, substrate processing is started (substrate processing step S2). In the substrate processing step S2, while the Ar gas, the N 2 gas, and the NH 3 gas are supplied at first, the on-off valves 151c and 151d are opened to supply the HF gas. COR processing by 3 gas is performed (common substrate processing mode S2-1). Then, when the COR processing in the processing unit 11b ends first, the on-off valves 151d and 151h are closed while the COR processing by the processing unit 11a continues, and the supply of HF gas and NH 3 to the processing unit 11b is stopped. At the same time, the Ar gas flow rate and the N 2 gas flow rate to the processing unit 11 b are increased by the MFCs 150 b and 150 f (independent substrate processing mode S 2-2). The Ar gas and the N 2 gas corresponding to the flow rate increase function as a complementary gas that prevents the pressure difference between the processing unit 11 a and the processing unit 11 b. The increase in Ar gas and N 2 gas (supplementary gas flow rate) at this time is preferably an amount corresponding to the flow rate decrease due to the stop of the supply of HF gas and NH 3 .

処理部１１ａでの処理も終了した後、全ての開閉バルブを閉じてガスの供給を停止し、排気機構１５により処理空間Ｓを排気する（排気工程Ｓ３）。   After the processing in the processing unit 11a is also completed, all the on-off valves are closed to stop the supply of gas, and the processing space S is exhausted by the exhaust mechanism 15 (exhaust process S3).

（処理シーケンスの他の例）
上記の処理シーケンス例においては、独立基板処理モードＳ２−２において、一方の処理部における処理ガス（ＨＦガス、ＮＨ３ガス）を停止した際に、他方の処理部においてＡｒガスおよびＮ２ガスを増量させて補完ガスとして機能させることにより、処理部１１ａと処理部１１ｂとの間の圧力差が生じることを阻止するようにして、処理部１１ａ、１１ｂ相互間でのガスの流入を抑制するが、処理部１１ａ，１１ｂは、内壁７１ａ、７１ｂの基板載置台６１ａ、６１ｂよりも下の部分に形成されたスリットを介して繋がっているため、一方の処理部から他の処理部への処理ガス（ＨＦガス、ＮＨ３ガス）の回り込み、および他方の処理部から一方の処理部への補完ガス（Ａｒガス、Ｎ２ガス）の回り込みを完全に防止することは困難であり、わずかなガスの回り込み（ガスの逆拡散）が生じる。処理ガスの流量がある程度以上の場合には、このようなわずかなガスの回り込みはエッチング量に大きな影響を与えず、処理部１１ａ，１１ｂで所望のエッチング量での処理を実現することができるが、低流量領域の処理においては、このようなガスの回り込みの影響が無視し得なくなり、設定したエッチング量に対する偏差が大きくなってしまい、処理部１１ａ，１１ｂにおいて所望の独立処理が行えなくなる。 (Another example of processing sequence)
In the above processing sequence example, when the processing gas (HF gas, NH 3 gas) in one processing unit is stopped in the independent substrate processing mode S2-2, Ar gas and N 2 gas are processed in the other processing unit. By causing the pressure difference between the processing unit 11a and the processing unit 11b to occur by increasing the quantity to function as a complementary gas, the inflow of gas between the processing units 11a and 11b is suppressed. Since the processing units 11a and 11b are connected via slits formed in portions below the substrate mounting bases 61a and 61b of the inner walls 71a and 71b , the processing gas from one processing unit to the other processing unit is provided. It is difficult to completely prevent the wraparound of (HF gas, NH 3 gas) and wraparound of the complementary gas (Ar gas, N 2 gas) from the other processing unit to the one processing unit. There is a slight gas entrainment (gas reverse diffusion). When the flow rate of the processing gas is above a certain level, such slight entrapment of gas does not greatly affect the etching amount, and processing with a desired etching amount can be realized in the processing units 11a and 11b. In the process of the low flow rate region, the influence of such gas wraparound can not be ignored, the deviation from the set etching amount becomes large, and the desired independent processing can not be performed in the processing units 11a and 11b.

一方、このような不都合を防止するために処理ガス（ＨＦガス、ＮＨ３ガス）および補完ガス（Ａｒガス、Ｎ２ガス）を大流量化すると、エッチングレートが増加してしまい、処理時間やガス流量比等でエッチング量を調整する必要があり、プロセスマージンが狭くなってしまう。 On the other hand, the process gas (HF gas, NH 3 gas) in order to prevent such inconvenience and complementary gas (Ar gas, N 2 gas) when large flow rate of the etching rate will be increased, processing time and gas It is necessary to adjust the etching amount by the flow rate ratio etc., and the process margin becomes narrow.

そこで、本例では、圧力安定化工程Ｓ１の際に、次の基板処理工程Ｓ２の独立基板処理モードＳ２−２で処理部１１ａと１１ｂとの間で処理ガスおよび補完ガスが逆拡散することを抑制可能な、ガス導入部材１２ａ，１２ｂから排気機構１５へ向かう調圧ガスの流れを形成できるような流量で調圧ガスを流す。これにより、低流量領域において基板処理工程Ｓ２の独立基板処理モードＳ２−２におけるガスの回り込み（逆拡散）を効果的に抑制する。   Therefore, in the present example, during the pressure stabilization step S1, back diffusion of the processing gas and the complementary gas between the processing portions 11a and 11b in the independent substrate processing mode S2-2 of the next substrate processing step S2 is performed. The pressure-adjusting gas is flowed at such a flow rate that can form a flow of pressure-adjusting gas from the gas introduction members 12 a and 12 b toward the exhaust mechanism 15 which can be suppressed. Thereby, the gas wraparound (reverse diffusion) in the independent substrate processing mode S2-2 of the substrate processing step S2 is effectively suppressed in the low flow rate region.

具体的には図６に示すように、圧力安定化工程Ｓ１の際に調圧ガスとして供給するＡｒガス、Ｎ２ガス、ＮＨ３ガスの流量を基板処理工程Ｓ２よりも多くする。この場合の調圧ガスのトータル流量は、基板処理工程Ｓ２の際の３倍以上であることが好ましい。調圧ガスとしては、基板処理工程Ｓ２の際に供給するガスの一部であって、基板処理が生じないものを用いることができる。その後の基板処理工程Ｓ２においては、共通基板処理モードＳ２−１および独立基板処理モードＳ２−２を図５の処理シーケンスと同様に行う。その後、図５の処理シーケンスと同様、ガスを停止し、排気機構１５により処理空間Ｓを排気する排気工程Ｓ３を行う。 Specifically, as shown in FIG. 6, the flow rates of Ar gas, N 2 gas, and NH 3 gas supplied as the pressure adjustment gas in the pressure stabilization step S1 are made larger than those in the substrate processing step S2. The total flow rate of the pressure control gas in this case is preferably at least three times that in the substrate processing step S2. As a pressure control gas, it is a part of gas supplied at the time of substrate processing process S2, Comprising: The thing in which substrate processing does not arise can be used. In the subsequent substrate processing step S2, the common substrate processing mode S2-1 and the independent substrate processing mode S2-2 are performed in the same manner as the processing sequence of FIG. Thereafter, as in the processing sequence of FIG. 5, the gas is stopped, and the exhaust mechanism 15 performs the exhaust step S3 of exhausting the processing space S.

これにより、低流量領域において、独立基板処理モードＳ２−２の際に、補完ガスにより圧力調整するのみの場合よりも、より効果的に処理ガスおよび補完ガスの逆流を抑制することができる。具体的には、低流量領域においても、処理を止めたい処理部１１ｂに処理部１１ａから処理ガス（ＨＦガス、ＮＨ３ガス）が逆流すること、および処理を継続したい処理部１１ａに処理部１１ｂから補完ガス（Ａｒガス、Ｎ２ガス）が逆流することを極めて効果的に抑制することができ、処理部１１ａ、１１ｂのいずれにおいても設定したエッチング量に近いエッチング量となるように基板処理を行うことができる。 Thereby, in the low flow rate region, in the independent substrate processing mode S2-2, it is possible to more effectively suppress the backflow of the processing gas and the complementing gas than in the case of only adjusting the pressure by the complementing gas. Specifically, even in the low flow rate region, the processing gas (HF gas, NH 3 gas) flows back from the processing unit 11a to the processing unit 11b that wants to stop the processing, and the processing unit 11b that wants to continue the processing It is possible to extremely effectively suppress the backflow of the complementary gas (Ar gas, N 2 gas) from the substrate processing, and the substrate processing is performed so that the etching amount close to the etching amount set in any of the processing units 11a and 11b. It can be carried out.

実際に圧力安定化工程において調圧ガスの流量を増加した場合の効果について図７を参照して説明する。ここでは、図１の装置を用いて圧力安定化工程を行った後、基板処理工程において、一方の処理部において処理を継続し、他方の処理部において処理ガス（ＨＦガス、ＮＨ３ガス）を途中で止めて補完ガス（Ａｒガス、Ｎ２ガス）を導入した。図７は処理を継続した方の処理部における、基板処理工程の際のトータルガス流量と、エッチング量偏差（実際のエッチング量と設定したエッチング量の差）を示す図である。図中黒丸は圧力安定化工程における調圧ガス（Ａｒガス、Ｎ２ガス、ＮＨ３ガス）の流量を基板処理工程と同じにした場合のエッチング量偏差であり、トータル流量が低い領域ではエッチング量偏差が大きくなる傾向があり、トータル流量が３００ｓｃｃｍではエッチング量偏差が−０．３３ｎｍ程度と大きい値を示した。これに対して黒四角は、調圧ガスの流量を３倍にした場合であり、この場合には、基板処理工程の際のトータル流量が３００ｓｃｃｍであってもエッチング量偏差が−０．０３ｎｍ程度と極めて設定値に近くなった。このことから調圧ガスの流量を増加させる効果が確認された。 The effect of increasing the flow rate of the pressure control gas in the pressure stabilization step will be described with reference to FIG. Here, after performing the pressure stabilization process using the apparatus of FIG. 1, in the substrate processing process, the processing is continued in one processing unit, and the processing gas (HF gas, NH 3 gas) is processed in the other processing unit. complementary stop on the way gas (Ar gas, N 2 gas) was introduced. FIG. 7 is a diagram showing the total gas flow rate and the etching amount deviation (difference between the actual etching amount and the set etching amount) in the substrate processing step in the processing unit which has continued the processing. Black circles in the figure are etching amount deviations when the flow rate of the pressure control gas (Ar gas, N 2 gas, NH 3 gas) in the pressure stabilization step is the same as in the substrate processing step, and the etching amount in the region where the total flow rate is low The deviation tends to be large, and when the total flow rate is 300 sccm, the etching amount deviation shows a large value of about -0.33 nm. On the other hand, the black squares are cases where the flow rate of the pressure control gas is tripled, and in this case, the etching amount deviation is about -0.03 nm even if the total flow rate at the time of the substrate processing step is 300 sccm. And extremely close to the set value. From this, it was confirmed that the pressure control gas flow rate was increased.

なお、以上のようにＨＦガスおよびＮＨ３ガスを用いてウエハのＳｉＯ２膜に対してＣＯＲ処理を行うと、反応生成物としてフルオロケイ酸アンモニウム（（ＮＨ４）２ＳｉＦ６；ＡＦＳ）が生成するため、ＣＯＲ処理装置１００で処理後のウエハを、熱処理装置にて熱処理し、ＡＦＳを分解除去する。 As described above, when the SiO 2 film of the wafer is subjected to COR processing using HF gas and NH 3 gas, ammonium fluorosilicate ((NH 4 ) 2 SiF 6 ; AFS) is generated as a reaction product. Therefore, the wafer processed by the COR processing apparatus 100 is heat-treated by the heat processing apparatus to decompose and remove the AFS.

以上のように、本実施形態によれば、２枚のウエハに対してそれぞれ処理部１１ａおよび処理部１１ｂで処理するにあたり、排気機構１５を共通化しつつ、これら処理部で異なるガス条件での処理を施すことが可能である。   As described above, according to the present embodiment, when processing two wafers with the processing unit 11a and the processing unit 11b, processing under different gas conditions is performed by these processing units while the exhaust mechanism 15 is shared. It is possible to

なお、上記一実施形態では、ＨＦガスおよびＮＨ３ガスを用いてＣＯＲ処理を行う場合について説明したが、図１の基板処理装置によりＨＦガスのみまたはＮＨ３ガスのみでの処理を行うこともできる。例えば、ＨＦガスをＡｒガスで希釈して供給し、処理を行う場合、開閉バルブ１５１ｅ、１５１ｆ、１５１ｇ、１５１ｈはクローズしたまま、開閉バルブ１５１ａ、１５１ｂ、１５１ｃ、１５１ｄをオープンしてＨＦガスおよびＡｒガスを供給し、共通基板処理モードで処理した後、独立基板モードの際には、例えば以下のケースｄに示すように開閉バルブを制御すればよい。 In the above embodiment, the case where the COR processing is performed using the HF gas and the NH 3 gas has been described, but the substrate processing apparatus in FIG. 1 can also perform the processing using only the HF gas or only the NH 3 gas. . For example, when HF gas is diluted with Ar gas and supplied for processing, the open / close valves 151a, 151b, 151c, 151d are opened while the open / close valves 151e, 151f, 151g, 151h are closed to open HF gas and Ar After supplying the gas and processing in the common substrate processing mode, in the case of the independent substrate mode, the on-off valve may be controlled as shown in, for example, the following case d.

［ケースｄ］
・ガス導入部材１２ａへの供給系
開閉バルブ１５１ａ（Ａｒ） オープン
開閉バルブ１５１ｃ（ＨＦ） オープン
開閉バルブ１５１ｅ（Ｎ２） クローズ
開閉バルブ１５１ｇ（ＮＨ３） クローズ
・ガス導入部材１２ｂへの供給系
開閉バルブ１５１ｂ（Ａｒ） オープン
開閉バルブ１５１ｄ（ＨＦ） クローズ
開閉バルブ１５１ｆ（Ｎ２） クローズ
開閉バルブ１５１ｈ（ＮＨ３） クローズ [Case d]
Supply system to gas introduction member 12a on-off valve 151a (Ar) open on-off valve 151c (HF) open on-off valve 151e (N 2 ) closed on-off valve 151g (NH 3 ) closed supply system on gas introduction member 12b on-off valve 151b (Ar) open on-off valve 151 d (HF) closed on-off valve 151 f (N 2 ) closed on-off valve 151 h (NH 3 ) closed

＜チャンバー構成＞
図８Ａは一実施形態に係るＣＯＲ処理装置１００のチャンバー構成の一例を概略的に示す図、図８Ｂは一実施形態に係るＣＯＲ処理装置１００のチャンバー構成の他の例を概略的に示す図である。 <Chamber Configuration>
8A schematically shows an example of the chamber configuration of the COR processing apparatus 100 according to an embodiment, and FIG. 8B schematically shows another example of the chamber configuration of the COR processing apparatus 100 according to the embodiment. is there.

図１に示したＣＯＲ処理装置１００は、図８Ａに示すように、処理部１１ａ、１１ｂのそれぞれは、一つの共通したチャンバー１０内に設けられ、排気機構１５は、一つの共通したチャンバー１０内に設けられた処理部１１ａ、１１ｂで共有される構成である。また、図８Ａの構成は図１のＣＯＲ処理装置１００に限らず、チャンバー内に独立して処理を行える２つの処理部を有する装置であればよい。   In the COR processing apparatus 100 shown in FIG. 1, as shown in FIG. 8A, each of the processing units 11a and 11b is provided in one common chamber 10, and the exhaust mechanism 15 is provided in one common chamber 10. Are shared by the processing units 11a and 11b. Further, the configuration of FIG. 8A is not limited to the COR processing apparatus 100 of FIG. 1, and may be an apparatus having two processing units capable of performing processing independently in a chamber.

さらに、図８Ａのように一つの共通したチャンバー１０内に処理部１１ａ、１１ｂをそれぞれ設ける構成に限られず、例えば、図８Ｂに示すＣＯＲ処理装置１００ａに示すように、処理部１１ａ、１１ｂのそれぞれは、各々独立したチャンバー１０ａ、１０ｂ内に設け、排気機構１５は、各々独立したチャンバー１０ａ、１０ｂで共有される構成としてもよい。   Furthermore, as shown in FIG. 8A, the present invention is not limited to the configuration in which the processing units 11a and 11b are provided in one common chamber 10, for example, as illustrated in the COR processing apparatus 100a illustrated in FIG. 8B, each of the processing units 11a and 11b. May be provided in the independent chambers 10a and 10b, and the exhaust mechanism 15 may be shared by the independent chambers 10a and 10b.

処理部１１ａ、１１ｂのそれぞれは、各々独立したチャンバー１０ａ、１０ｂ内に設けた場合であっても、処理部１１ａ、１１ｂは、排気配管１０１を介して繋がっている。このため、処理部１１ａ、１１ｂのどちらへのガスの供給を止めた場合、排気配管１０１を介して処理部１１ａと処理部１１ｂとの間に圧力差が生じてしまう。このため、処理部１１ａ、１１ｂのそれぞれを、一つの共通したチャンバー１０内に設けた場合と同様に、処理部１１ａ、１１ｂ相互間でのガスの流入が発生する。   Even when each of the processing units 11 a and 11 b is provided in the independent chambers 10 a and 10 b, the processing units 11 a and 11 b are connected via the exhaust pipe 101. Therefore, when the supply of the gas to either of the processing units 11a and 11b is stopped, a pressure difference is generated between the processing unit 11a and the processing unit 11b via the exhaust pipe 101. For this reason, as in the case where each of the processing units 11a and 11b is provided in one common chamber 10, gas inflow occurs between the processing units 11a and 11b.

処理部１１ａ、１１ｂのそれぞれは、各々独立したチャンバー１０ａ、１０ｂ内に設けた場合であっても、制御部１６が、処理部１１ａと処理部１１ｂとの間の圧力差が拡大しないように、好ましくは処理部１１ａの圧力と処理部１１ｂの圧力とが等しくなるように、ガス供給機構１４に含まれた開閉バルブやＭＦＣを制御し、例えば、不活性ガスを圧力調整のための“補完ガス”として流す。これにより、チャンバー１０ａ、１０ｂで１つの排気機構１５によって処理部１１ａ、１１ｂからガスを共通に排気したとしても、図１に示したＣＯＲ処理装置１００と同様に、処理部１１ａ、１１ｂ相互間でのガスの流入を抑制することができる。   Even when each of the processing units 11a and 11b is provided in the independent chambers 10a and 10b, the control unit 16 does not increase the pressure difference between the processing unit 11a and the processing unit 11b. Preferably, the on-off valve and the MFC included in the gas supply mechanism 14 are controlled so that the pressure of the processing unit 11a and the pressure of the processing unit 11b become equal, for example, “complementing gas for pressure adjustment of inert gas It flows as ". Thereby, even if gas is commonly exhausted from the processing units 11a and 11b by the single exhaust mechanism 15 in the chambers 10a and 10b, similarly to the COR processing apparatus 100 shown in FIG. 1, between the processing units 11a and 11b. Gas flow can be suppressed.

＜補完ガスについて＞
上記一実施形態においては、圧力調整のための“補完ガス”として、ＨＦガスやＮＨ３ガス等の処理ガスを希釈する希釈ガス、つまり、ＡｒガスやＮ２ガス等に代表される不活性ガスを用いた。しかし、圧力調整のための“補完ガス”としては、不活性ガスに限られるものではなく、処理されたウエハＷａ、Ｗｂのエッチング対象膜に対して非反応である非反応性ガスを用いることも可能である。また、反応性ガスであっても、処理に影響を与えずに圧力を調整できるものであれば用いることが可能である。 <About complementary gas>
In the above embodiment, as a "complementing gas" for pressure adjustment, a dilution gas that dilutes a processing gas such as HF gas or NH 3 gas, that is, an inert gas represented by Ar gas, N 2 gas, etc. Was used. However, the "complementing gas" for pressure adjustment is not limited to the inert gas, and it is also possible to use a non-reactive gas that is non-reactive with the film to be etched of the processed wafers Wa and Wb. It is possible. Moreover, even if it is a reactive gas, it is possible to use it as long as the pressure can be adjusted without affecting the process.

また、上記一実施形態においては、圧力調整のための“補完ガス”として、基板処理の際に処理ガスと同時に使用される希釈ガスを用いたが、処理ガスと同時に使用される希釈ガスとは別に、専用の“補完ガス”を用いるようにしてもよい。この場合には、ガス供給機構１４には、新たに“補完ガス供給源”、“補完ガスを供給する供給配管”、“ＭＦＣ”、および“開閉バルブ”を別途設けるようにすればよい。   In the above embodiment, the dilution gas used simultaneously with the processing gas during substrate processing is used as the “complement gas” for pressure adjustment, but the dilution gas used simultaneously with the processing gas Alternatively, a dedicated "complementary gas" may be used. In this case, the gas supply mechanism 14 may be additionally provided with a “complementary gas supply source”, a “supply pipe for supplying the complementary gas”, an “MFC”, and an “open / close valve”.

＜他の適用＞
以上、この発明を一実施形態に従って説明したが、この発明は、上記一実施形態に限定されることはなく、その趣旨を逸脱しない範囲で種々変形可能である。また、本発明の実施形態は、上記一実施形態が唯一の実施形態でもない。 <Other application>
As mentioned above, although this invention was demonstrated according to one Embodiment, this invention is not limited to the said one embodiment, It can variously deform in the range which does not deviate from the meaning. Moreover, the embodiment of the present invention is not the only embodiment described above.

例えば、上記一実施形態では、複数の処理部に対して異なるガス処理条件で処理を行う例として、一方で処理ガスでの処理を継続し、他方で処理を停止する場合について主に説明したが、複数の処理部で処理ガスの流量を異ならせる場合や、異なる処理ガスを用いる場合にも適用可能である。   For example, in the above-described embodiment, as an example of performing processing under a plurality of processing units under different gas processing conditions, the processing with the processing gas is continued while the processing is stopped on the other side. The present invention is also applicable to the case where the flow rate of the processing gas is made different among a plurality of processing units, or the case where different processing gases are used.

また、上記一実施形態においては、被処理基板として半導体ウエハを例にとって説明したが、本発明の原理からして被処理基板は半導体ウエハに限るものではないことは明らかであり、他の種々の基板の処理に適用できることは言うまでもない。   In the above embodiment, a semiconductor wafer is described as an example of a substrate to be processed, but it is apparent from the principle of the present invention that the substrate to be processed is not limited to a semiconductor wafer, and various other types It goes without saying that it can be applied to the processing of a substrate.

さらに、上記一実施形態においては、複数の処理部として、処理部１１ａ、１１ｂの２つを持つ基板処理装置を例示したが、処理部の数は２つに限られることはない。この発明は、２以上の処理部を持つ基板処理装置であれば、その利点を損なうことなく適用することができる。   Furthermore, in the above-described embodiment, the substrate processing apparatus having two processing units 11a and 11b is illustrated as the plurality of processing units, but the number of processing units is not limited to two. The present invention can be applied to a substrate processing apparatus having two or more processing units without losing its advantages.

さらにまた、上記一実施形態においては、本発明をＣＯＲ処理装置に適用した場合を例示したが、基板処理装置としてはＣＯＲ処理装置に限られるものでもない。   Furthermore, although the case where the present invention is applied to the COR processing apparatus is exemplified in the above embodiment, the substrate processing apparatus is not limited to the COR processing apparatus.

その他、この発明はその要旨を逸脱しない範囲で様々に変形することができる。   In addition, the present invention can be variously modified without departing from the scope of the invention.

１０、１０ａ、１０ｂ；チャンバー
１１ａ、１１ｂ；処理部
１２ａ、１２ｂ；ガス導入部材
１４；ガス供給機構
１５；排気機構
１６；制御部
７１ａ，７１ｂ；内壁
１０１；排気配管
１４１；Ａｒガス供給源
１４２；ＨＦガス供給源
１４３；Ｎ２ガス供給源
１４４；ＮＨ３ガス供給源
１４５、１４５ａ、１４５ｂ；ＨＦガス供給配管
１４６ａ、１４６ｂ；供給配管
１４７、１４７ａ、１４７ｂ；Ａｒガス供給配管
１４８、１４８ａ、１４８ｂ；ＮＨ３ガス供給配管
１４９、１４９ａ、１４９ｂ；Ｎ２ガス供給配管
１５０ａ〜１５０ｈ；マスフローコントローラ
１５１ａ〜１５１ｈ；開閉バルブ 10, 10a, 10b; chamber 11a, 11b; processing unit 12a, 12b; gas introduction member 14; gas supply mechanism 15; exhaust mechanism 16; control unit 71a, 71b; inner wall 101; exhaust piping 141; Ar gas supply source 142; HF gas supply source 143; N 2 gas supply source 144; NH 3 gas supply source 145, 145a, 145b; HF gas supply piping 146a, 146b; supply piping 147, 147a, 147b; Ar gas supply piping 148, 148a, 148b; NH 3 gas supply piping 149, 149a, 149b; N 2 gas supply piping 150a to 150h; mass flow controller 151a to 151h; opening / closing valve

Claims (18)

真空雰囲気下で複数枚の被処理基板に所定の処理を施す基板処理装置であって、
前記複数枚の被処理基板のそれぞれに対して基板処理を施す複数の処理部と、
前記複数の処理部に対して処理ガスを独立に供給するガス供給機構と、
前記複数の処理部内の処理ガスを一括して排気する共通の排気機構と、
前記ガス供給機構および前記排気機構を制御する制御部と、を備え、
前記制御部は、
前記複数枚の被処理基板に対して基板処理を施す際、
前記複数の処理部から処理ガスを共通に排気しつつ、前記複数の処理部の全てに対して処理ガスとして第１のガスを同一のガス条件で供給する第１のモードと、
前記複数の処理部から処理ガスを一括して排気するように前記排気機構を制御しつつ、前記複数の処理部の一部に対しては前記第１のガスを供給し、前記複数の処理部の残りに対しては前記第１のガスとは異なる第２のガスを供給する第２のモードとを実行し、
前記第２のモードの際に、前記複数の処理部における圧力差が生じることを阻止するように、前記ガス供給機構を制御することを特徴とする基板処理装置。 A substrate processing apparatus for performing predetermined processing on a plurality of substrates to be processed in a vacuum atmosphere, comprising:
A plurality of processing units that perform substrate processing on each of the plurality of target substrates;
A gas supply mechanism for independently supplying a processing gas to the plurality of processing units;
A common exhaust mechanism that collectively exhausts the processing gases in the plurality of processing units;
A control unit that controls the gas supply mechanism and the exhaust mechanism;
The control unit
When performing substrate processing on the plurality of target substrates,
A first mode of supplying a first gas as a processing gas under the same gas conditions to all of the plurality of processing units while exhausting the processing gas in common from the plurality of processing units;
The first gas is supplied to a part of the plurality of processing units while the exhaust mechanism is controlled so that the processing gas is exhausted collectively from the plurality of processing units, and the plurality of processing units are processed. Performing a second mode of supplying a second gas different from the first gas for the rest of the
A substrate processing apparatus, wherein the gas supply mechanism is controlled to prevent a pressure difference in the plurality of processing units from being generated in the second mode . 前記制御部は、
前記第２のモードの際、
前記複数の処理部の一部における圧力と前記複数の処理部の残りにおける圧力差が生じることを阻止するように、前記複数の処理部のいずれかに対する前記第２のガスの供給量を制御することを特徴とする請求項１に記載の基板処理装置。 The control unit
In the second mode,
The supply amount of the second gas to any one of the plurality of processing units is controlled to prevent a pressure difference between a part of the plurality of processing units and a pressure of the rest of the plurality of processing units. The substrate processing apparatus according to claim 1 , 前記第２のガスは、不活性ガスおよび／または処理される被処理基板に対して非反応である非反応性ガスであることを特徴とする請求項１または請求項２に記載の基板処理装置。 The second gas is a substrate processing apparatus according to claim 1 or claim 2, wherein the non-reactive gas is non-reactive with respect to the target substrate that is inert gases and / or treatment . 前記制御部は、
前記第２のモードの際、
前記複数の処理部の一部においては、前記被処理基板に対する処理ガスである第１のガスによる基板処理を続行させ、
前記複数の処理部の残りにおいては、前記被処理基板に対する処理ガスである第１のガスの供給を停止させ、前記第２のガスを補完ガスとして供給させて基板処理を停止させることを特徴とする請求項３に記載の基板処理装置。 The control unit
In the second mode,
In part of the plurality of processing units, substrate processing with the first gas, which is a processing gas for the substrate to be processed, is continued;
In the remainder of the plurality of processing units, the supply of the first gas as the processing gas to the substrate to be processed is stopped, and the second gas is supplied as a complementary gas to stop the substrate processing. The substrate processing apparatus according to claim 3 . 前記制御部は、
前記基板処理に先立って、前記複数の処理部を調圧ガスにより調圧するとともに圧力を安定化させる圧力安定化を実行させ、
この圧力安定化の際に、前記調圧ガスの流量を、前記基板処理の前記第２のモードで前記複数の処理部の間で、処理ガスである前記第１のガスと補完ガスである前記第２のガスが逆拡散することを抑制可能な前記調圧ガスの前記排気機構へ向かう流れを形成できるような流量に制御することを特徴とする請求項４に記載の基板処理装置。 The control unit
Prior to the substrate processing, pressure stabilization is performed to pressure-regulate the plurality of processing units with a pressure control gas and to stabilize the pressure.
At the time of pressure stabilization, the flow rate of the pressure adjustment gas is set to the processing gas and the complementary gas as the processing gas among the plurality of processing units in the second mode of the substrate processing. 5. The substrate processing apparatus according to claim 4 , wherein the flow rate is controlled so as to form a flow toward the exhaust mechanism of the pressure regulation gas capable of suppressing the back diffusion of the second gas. 前記調圧ガスとして、前記基板処理の際に供給するガスの一部であって、基板処理が生じないものを用い、前記圧力安定化の際の前記調圧ガスの流量を、前記基板処理の時の流量よりも多くすることを特徴とする請求項５に記載の基板処理装置。 The pressure control gas is a part of the gas supplied during the substrate processing and does not cause substrate processing, and the flow rate of the pressure control gas during the pressure stabilization is the same as that of the substrate processing. The substrate processing apparatus according to claim 5 , characterized in that the flow rate is higher than the flow rate. 前記圧力安定化の際の前記調圧ガスの流量を、前記基板処理の時の流量の３倍以上とすることを特徴とする請求項６に記載の基板処理装置。 The substrate processing apparatus according to claim 6 , wherein a flow rate of the pressure adjustment gas at the time of the pressure stabilization is set to be three times or more of a flow rate at the time of the substrate processing. 前記第２のガスとして、前記第１のガスの希釈ガスとして用いられるものを使用することを特徴とする請求項３から請求項７のいずれか１項に記載の基板処理装置。 The substrate processing apparatus according to any one of claims 3 to 7 , wherein a gas used as a dilution gas of the first gas is used as the second gas. 前記複数の処理部のそれぞれは、一つの共通したチャンバー内に設けられ、
前記排気機構は、前記一つの共通したチャンバー内に設けられた前記複数の処理部で共有されることを特徴とする請求項１から請求項８のいずれか一項に記載の基板処理装置。 Each of the plurality of processing units is provided in one common chamber,
The substrate processing apparatus according to any one of claims 1 to 8 , wherein the exhaust mechanism is shared by the plurality of processing units provided in the one common chamber. 前記複数の処理部のそれぞれは、各々独立したチャンバー内に設けられ、
前記排気機構は、前記独立したチャンバーで共有されることを特徴とする請求項１から請求項８のいずれか一項に記載の基板処理装置。 Each of the plurality of processing units is provided in an independent chamber,
The substrate processing apparatus according to any one of claims 1 to 8 , wherein the exhaust mechanism is shared by the independent chambers. 複数枚の被処理基板のそれぞれに対して基板処理を施す複数の処理部と、前記複数の処理部に対してガスを独立に供給するガス供給機構と、前記複数の処理部内のガスを一括して排気する共通の排気機構とを備えた基板処理装置を用いて、真空雰囲気下で複数枚の被処理基板に所定の処理を施す基板処理方法であって、
複数枚の被処理基板に対して基板処理を施す際、
前記複数の処理部から処理ガスを共通に排気しつつ、前記複数の処理部の全てに対して処理ガスとして第１のガスを同一のガス条件で供給する第１のモードと、
前記複数の処理部から処理ガスを一括して排気するように前記排気機構を制御しつつ、前記複数の処理部の一部に対しては前記第１のガスを供給し、前記複数の処理部の残りに対しては前記第１のガスとは異なる第２のガスを供給する第２のモードとを実行し、
前記第２のモードの際、
前記複数の処理部の一部における圧力と前記複数の処理部の残りにおける圧力差が生じることを阻止するように、前記複数の処理部の残りにおける前記第２のガスの供給量を制御することを特徴とする基板処理方法。 A plurality of processing units for performing substrate processing on a plurality of substrates to be processed, a gas supply mechanism for independently supplying a gas to the plurality of processing units, and a plurality of gases in the plurality of processing units A substrate processing method for performing predetermined processing on a plurality of substrates to be processed in a vacuum atmosphere using a substrate processing apparatus provided with a common exhaust mechanism for exhausting
When performing substrate processing on a plurality of target substrates,
A first mode of supplying a first gas as a processing gas under the same gas conditions to all of the plurality of processing units while exhausting the processing gas in common from the plurality of processing units;
The first gas is supplied to a part of the plurality of processing units while the exhaust mechanism is controlled so that the processing gas is exhausted collectively from the plurality of processing units, and the plurality of processing units are processed. Performing a second mode of supplying a second gas different from the first gas for the rest of the
In the second mode,
Controlling the supply amount of the second gas in the rest of the plurality of processing units so as to prevent a pressure difference between a part of the plurality of processing units and a pressure in the rest of the plurality of processing units A substrate processing method characterized by 前記第２のガスは、不活性ガスおよび／または処理される被処理基板に対して非反応である非反応性ガスであることを特徴とする請求項１１に記載の基板処理方法。 12. The substrate processing method according to claim 11 , wherein the second gas is an inert gas and / or a non-reactive gas that is non-reactive with the substrate to be processed. 前記第２のモードの際、
前記複数の処理部の一部においては、前記被処理基板に対する処理ガスである第１のガスによる基板処理を続行し、
前記複数の処理部の残りにおいては、前記被処理基板に対する処理ガスである第１のガスの供給を停止し、前記第２のガスを補完ガスとして供給して基板処理を停止させることを特徴とする請求項１２に記載の基板処理方法。 In the second mode,
In part of the plurality of processing units, substrate processing with the first gas that is the processing gas for the substrate to be processed is continued,
In the rest of the plurality of processing units, the supply of the first gas as the processing gas to the substrate to be processed is stopped, and the second gas is supplied as a complementary gas to stop the substrate processing. The substrate processing method according to claim 12 . 前記基板処理に先立って、前記複数の処理部を調圧ガスにより調圧するとともに圧力を安定化させる圧力安定化工程を実行し、
この圧力安定化工程の際に、前記調圧ガスの流量を、前記基板処理の前記第２のモードで前記複数の処理部の間で、処理ガスである前記第１のガスと補完ガスである前記第２のガスが逆拡散することを抑制可能な前記調圧ガスの前記排気機構へ向かう流れを形成できるような流量とすることを特徴とする請求項１３に記載の基板処理方法。 Prior to the substrate processing, a pressure stabilization step is performed to adjust the pressure of the plurality of processing units with a pressure adjustment gas and to stabilize the pressure.
During the pressure stabilization step, the flow rate of the pressure adjustment gas is the first gas as a processing gas and the complementary gas among the plurality of processing units in the second mode of the substrate processing. The substrate processing method according to claim 13 , wherein the flow rate is such that the flow of the pressure adjustment gas capable of suppressing the back diffusion of the second gas toward the exhaust mechanism can be formed. 前記調圧ガスとして、前記基板処理の際に供給するガスの一部であって、基板処理が生じないものを用い、前記圧力安定化工程の際の前記調圧ガスの流量を、前記基板処理の時の流量よりも多くすることを特徴とする請求項１４に記載の基板処理方法。 The pressure control gas is a part of the gas supplied during the substrate processing and does not cause substrate processing, and the flow rate of the pressure control gas in the pressure stabilization step is the substrate processing. The substrate processing method according to claim 14 , wherein the flow rate is higher than the flow rate at the time of. 前記圧力安定化工程の際の前記調圧ガスの流量を、前記基板処理の時の流量の３倍以上とすることを特徴とする請求項１５に記載の基板処理方法。 The substrate processing method according to claim 15 , wherein a flow rate of the pressure adjustment gas in the pressure stabilization step is set to three or more times a flow rate at the time of the substrate processing. 前記第２のガスとして、前記第１のガスの希釈ガスとして用いられるものを使用することを特徴とする請求項１３から請求項１６のいずれか１項に記載の基板処理方法。 The substrate processing method according to any one of claims 13 to 16 , wherein a gas used as a dilution gas of the first gas is used as the second gas. コンピュータ上で動作し、基板処理装置を制御するためのプログラムが記憶された記憶媒体であって、前記プログラムは、実行時に、請求項１１から請求項１７のいずれかの基板処理方法が行われるように、コンピュータに前記基板処理装置を制御させることを特徴とする記憶媒体。 A storage medium which runs on a computer and stores a program for controlling a substrate processing apparatus, wherein the program executes the substrate processing method according to any one of claims 11 to 17. A storage medium characterized by causing a computer to control the substrate processing apparatus.
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