JP6533982B2 - 量子井戸構造、積層構造体および半導体装置 - Google Patents

量子井戸構造、積層構造体および半導体装置 Download PDF

Info

Publication number
JP6533982B2
JP6533982B2 JP2015035937A JP2015035937A JP6533982B2 JP 6533982 B2 JP6533982 B2 JP 6533982B2 JP 2015035937 A JP2015035937 A JP 2015035937A JP 2015035937 A JP2015035937 A JP 2015035937A JP 6533982 B2 JP6533982 B2 JP 6533982B2
Authority
JP
Japan
Prior art keywords
layer
substrate
quantum well
raw material
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2015035937A
Other languages
English (en)
Japanese (ja)
Other versions
JP2016156073A (ja
JP2016156073A5 (enExample
Inventor
真也 織田
真也 織田
貴博 佐々木
貴博 佐々木
俊実 人羅
俊実 人羅
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Flosfia Inc
Original Assignee
Flosfia Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Flosfia Inc filed Critical Flosfia Inc
Priority to JP2015035937A priority Critical patent/JP6533982B2/ja
Publication of JP2016156073A publication Critical patent/JP2016156073A/ja
Publication of JP2016156073A5 publication Critical patent/JP2016156073A5/ja
Application granted granted Critical
Publication of JP6533982B2 publication Critical patent/JP6533982B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Recrystallisation Techniques (AREA)
JP2015035937A 2015-02-25 2015-02-25 量子井戸構造、積層構造体および半導体装置 Active JP6533982B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2015035937A JP6533982B2 (ja) 2015-02-25 2015-02-25 量子井戸構造、積層構造体および半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015035937A JP6533982B2 (ja) 2015-02-25 2015-02-25 量子井戸構造、積層構造体および半導体装置

Publications (3)

Publication Number Publication Date
JP2016156073A JP2016156073A (ja) 2016-09-01
JP2016156073A5 JP2016156073A5 (enExample) 2018-04-12
JP6533982B2 true JP6533982B2 (ja) 2019-06-26

Family

ID=56825199

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015035937A Active JP6533982B2 (ja) 2015-02-25 2015-02-25 量子井戸構造、積層構造体および半導体装置

Country Status (1)

Country Link
JP (1) JP6533982B2 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019151922A (ja) 2018-02-28 2019-09-12 株式会社Flosfia 積層体および半導体装置
KR20250119538A (ko) * 2022-12-06 2025-08-07 신에쓰 가가꾸 고교 가부시끼가이샤 결정성 산화물 반도체막, 적층 구조체, 및 반도체 장치

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5343224B1 (ja) * 2012-09-28 2013-11-13 Roca株式会社 半導体装置および結晶
US20140277358A1 (en) * 2013-03-13 2014-09-18 DePuy Synthes Products, LLC Striped stent introducer
JP6390052B2 (ja) * 2014-08-29 2018-09-19 高知県公立大学法人 量子井戸構造および半導体装置

Also Published As

Publication number Publication date
JP2016156073A (ja) 2016-09-01

Similar Documents

Publication Publication Date Title
JP7048864B2 (ja) 半導体装置
JP7498903B2 (ja) 半導体装置
JP6876895B2 (ja) 結晶性酸化物半導体膜、半導体装置
TWI660505B (zh) Semiconductor device
JP6906217B2 (ja) 半導体装置
JP6379369B2 (ja) 結晶性積層構造体、半導体装置
JP7404594B2 (ja) 半導体装置および半導体装置を含む半導体システム
JP6701472B2 (ja) 結晶性酸化物半導体膜および半導体装置
JP7065440B2 (ja) 半導体装置の製造方法および半導体装置
JP6945121B2 (ja) 結晶性半導体膜および半導体装置
JP2017005148A (ja) 半導体膜、積層構造体および半導体装置
CN112334606A (zh) 结晶性氧化物膜
JP2017118090A (ja) 積層構造体および半導体装置
JP2016051824A (ja) エピタキシャル成長方法および成長装置ならびに量子井戸構造の作製方法
JP6533982B2 (ja) 量子井戸構造、積層構造体および半導体装置
JP7016489B2 (ja) 結晶性酸化物半導体膜、半導体装置
JPWO2019098297A1 (ja) 半導体装置
TWI791674B (zh) 半導體裝置及半導體系統
JP2017005147A (ja) 結晶性半導体膜、積層構造体および半導体装置
JP2017010967A (ja) 成膜方法
TWI804527B (zh) 半導體裝置及半導體系統
JP2016157879A (ja) 結晶性酸化物半導体膜、半導体装置
JP6980183B2 (ja) 結晶性酸化物半導体膜、半導体装置
JP6932904B2 (ja) 半導体装置
JP2017005146A (ja) 結晶性半導体膜、積層構造体および半導体装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20180223

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20180223

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20180907

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20181009

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20181206

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20190409

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20190507

R150 Certificate of patent or registration of utility model

Ref document number: 6533982

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250