JP6531831B2 - 液処理装置、液処理方法及び記憶媒体 - Google Patents

液処理装置、液処理方法及び記憶媒体 Download PDF

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Publication number
JP6531831B2
JP6531831B2 JP2017544416A JP2017544416A JP6531831B2 JP 6531831 B2 JP6531831 B2 JP 6531831B2 JP 2017544416 A JP2017544416 A JP 2017544416A JP 2017544416 A JP2017544416 A JP 2017544416A JP 6531831 B2 JP6531831 B2 JP 6531831B2
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Japan
Prior art keywords
substrate
processing liquid
wafer
discharge nozzle
processing
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JP2017544416A
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Japanese (ja)
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JPWO2017061199A1 (ja
Inventor
真任 田所
真任 田所
正志 榎本
正志 榎本
輝彦 小玉
輝彦 小玉
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Coating Apparatus (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2017544416A 2015-10-06 2016-09-02 液処理装置、液処理方法及び記憶媒体 Active JP6531831B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2015198742 2015-10-06
JP2015198742 2015-10-06
PCT/JP2016/075867 WO2017061199A1 (ja) 2015-10-06 2016-09-02 液処理装置、液処理方法及び記憶媒体

Publications (2)

Publication Number Publication Date
JPWO2017061199A1 JPWO2017061199A1 (ja) 2018-07-19
JP6531831B2 true JP6531831B2 (ja) 2019-06-19

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JP2017544416A Active JP6531831B2 (ja) 2015-10-06 2016-09-02 液処理装置、液処理方法及び記憶媒体

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JP (1) JP6531831B2 (zh)
TW (1) TW201727704A (zh)
WO (1) WO2017061199A1 (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6444909B2 (ja) * 2016-02-22 2018-12-26 東京エレクトロン株式会社 基板処理方法、基板処理装置及びコンピュータ読み取り可能な記録媒体
JP7220975B2 (ja) * 2017-04-24 2023-02-13 東京エレクトロン株式会社 基板処理装置及び基板処理方法
WO2019159742A1 (ja) * 2018-02-13 2019-08-22 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
JP6608507B2 (ja) * 2018-11-28 2019-11-20 東京エレクトロン株式会社 基板処理方法、基板処理装置及びコンピュータ読み取り可能な記録媒体
JP7277258B2 (ja) * 2019-05-31 2023-05-18 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP7473407B2 (ja) 2020-06-15 2024-04-23 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
TWI762188B (zh) * 2021-02-08 2022-04-21 台灣積體電路製造股份有限公司 製造半導體裝置的方法與製程設備
JP2023132218A (ja) * 2022-03-10 2023-09-22 キオクシア株式会社 半導体製造装置及び半導体装置の製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001102287A (ja) * 1999-09-29 2001-04-13 Semiconductor Leading Edge Technologies Inc レジスト塗布現像装置、および下層反射防止膜のエッジカット方法
US6453916B1 (en) * 2000-06-09 2002-09-24 Advanced Micro Devices, Inc. Low angle solvent dispense nozzle design for front-side edge bead removal in photolithography resist process
JP3995236B2 (ja) * 2002-07-01 2007-10-24 株式会社アドバンスト・ディスプレイ 基板端面洗浄装置、基板端面洗浄方法及び半導体装置の製造方法
JP2004179211A (ja) * 2002-11-25 2004-06-24 Nec Kansai Ltd レジスト塗布装置のエッジリンス機構
JP4601452B2 (ja) * 2005-02-22 2010-12-22 大日本スクリーン製造株式会社 基板処理装置
JP4745365B2 (ja) * 2008-04-10 2011-08-10 東京エレクトロン株式会社 基板の処理方法及び基板の処理装置
JP5691767B2 (ja) * 2011-04-12 2015-04-01 東京エレクトロン株式会社 基板処理方法、その基板処理方法を実行させるためのプログラムを記録した記録媒体、基板処理装置及び基板処理システム
JP5841389B2 (ja) * 2011-09-29 2016-01-13 株式会社Ｓｃｒｅｅｎセミコンダクターソリューションズ 基板処理装置および基板処理方法

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Publication number Publication date
TW201727704A (zh) 2017-08-01
JPWO2017061199A1 (ja) 2018-07-19
WO2017061199A1 (ja) 2017-04-13

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