JP6529906B2 - データ保持フローティングゲートキャパシタを備えるシリサイド化集積回路 - Google Patents

データ保持フローティングゲートキャパシタを備えるシリサイド化集積回路 Download PDF

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JP6529906B2
JP6529906B2 JP2015520493A JP2015520493A JP6529906B2 JP 6529906 B2 JP6529906 B2 JP 6529906B2 JP 2015520493 A JP2015520493 A JP 2015520493A JP 2015520493 A JP2015520493 A JP 2015520493A JP 6529906 B2 JP6529906 B2 JP 6529906B2
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layer
electrode
integrated circuit
metal
capacitor
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Japanese (ja)
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JP2015522214A (ja
JP2015522214A5 (enExample
Inventor
リウ カイピン
リウ カイピン
チャタジー アミタヴァ
チャタジー アミタヴァ
マフムード カン イムラン
マフムード カン イムラン
Original Assignee
日本テキサス・インスツルメンツ合同会社
テキサス インスツルメンツ インコーポレイテッド
テキサス インスツルメンツ インコーポレイテッド
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/045—Manufacture or treatment of capacitors having potential barriers, e.g. varactors
    • H10D1/047—Manufacture or treatment of capacitors having potential barriers, e.g. varactors of conductor-insulator-semiconductor capacitors, e.g. trench capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/60—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the control gate being a doped region, e.g. single-poly memory cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/212—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors

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  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
JP2015520493A 2012-06-27 2013-06-27 データ保持フローティングゲートキャパシタを備えるシリサイド化集積回路 Active JP6529906B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/534,865 US8779550B2 (en) 2012-06-27 2012-06-27 Analog floating-gate capacitor with improved data retention in a silicided integrated circuit
US13/534,865 2012-06-27
PCT/US2013/048139 WO2014004797A1 (en) 2012-06-27 2013-06-27 Silicided integrated circuit with data retaining floating-gate capacitor

Publications (3)

Publication Number Publication Date
JP2015522214A JP2015522214A (ja) 2015-08-03
JP2015522214A5 JP2015522214A5 (enExample) 2016-08-04
JP6529906B2 true JP6529906B2 (ja) 2019-06-12

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ID=49777194

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015520493A Active JP6529906B2 (ja) 2012-06-27 2013-06-27 データ保持フローティングゲートキャパシタを備えるシリサイド化集積回路

Country Status (5)

Country Link
US (2) US8779550B2 (enExample)
EP (1) EP2867921A4 (enExample)
JP (1) JP6529906B2 (enExample)
CN (1) CN104428895A (enExample)
WO (1) WO2014004797A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150364480A1 (en) * 2014-06-12 2015-12-17 Texas Instruments Incorporated Reducing Retention Loss in Analog Floating Gate Memory
US9882065B2 (en) 2014-06-27 2018-01-30 Texas Instruments Incorporated Analog floating-gate atmometer
US9787263B2 (en) 2015-11-23 2017-10-10 Texas Instruments Incorporated Mismatch correction in differential amplifiers using analog floating gate transistors
FR3085540B1 (fr) * 2018-08-31 2020-09-25 St Microelectronics Rousset Dispositif integre de mesure temporelle a constante de temps ultra longue et procede de fabrication
US11551745B2 (en) * 2020-01-30 2023-01-10 Texas Instruments Incorporated Computation in-memory architecture for analog-to-digital conversion
CN114335342B (zh) * 2021-12-16 2025-05-13 上海华虹宏力半导体制造有限公司 一种ppm电容器及其制备方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3120983B2 (ja) * 1988-05-03 2000-12-25 テキサス インスツルメンツ インコーポレイテツド 集積回路中のキャパシタ
JP3700298B2 (ja) * 1996-12-10 2005-09-28 ソニー株式会社 半導体装置およびその製造方法
US6617204B2 (en) * 2001-08-13 2003-09-09 Macronix International Co., Ltd. Method of forming the protective film to prevent nitride read only memory cell charging
US6881999B2 (en) * 2002-03-21 2005-04-19 Samsung Electronics Co., Ltd. Semiconductor device with analog capacitor and method of fabricating the same
CN1249791C (zh) * 2002-09-24 2006-04-05 茂德科技股份有限公司 介电层的制造方法
KR100480469B1 (ko) * 2002-10-17 2005-04-07 동부아남반도체 주식회사 반도체 소자내 커패시터 제조방법
US6964901B2 (en) * 2003-06-03 2005-11-15 Micron Technology, Inc. Methods of forming rugged electrically conductive surfaces and layers
CN1610096A (zh) * 2003-10-21 2005-04-27 上海宏力半导体制造有限公司 利用自行对准金属硅化物制程形成多晶硅电容器的方法
KR100654350B1 (ko) * 2005-01-26 2006-12-08 삼성전자주식회사 실리사이드막을 구비하는 반도체 소자의 제조 방법 및이에 의해 제조된 반도체 소자
KR100772262B1 (ko) * 2006-07-28 2007-11-01 동부일렉트로닉스 주식회사 반도체 소자의 살리사이드 방지막 제조 방법
US8178915B1 (en) * 2011-03-23 2012-05-15 Texas Instruments Incorporated Unitary floating-gate electrode with both N-type and P-type gates

Also Published As

Publication number Publication date
JP2015522214A (ja) 2015-08-03
US20140001526A1 (en) 2014-01-02
EP2867921A4 (en) 2016-02-24
US20140295631A1 (en) 2014-10-02
WO2014004797A1 (en) 2014-01-03
US8779550B2 (en) 2014-07-15
US8975135B2 (en) 2015-03-10
EP2867921A1 (en) 2015-05-06
CN104428895A (zh) 2015-03-18

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