JP2015522214A5 - - Google Patents
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- Publication number
- JP2015522214A5 JP2015522214A5 JP2015520493A JP2015520493A JP2015522214A5 JP 2015522214 A5 JP2015522214 A5 JP 2015522214A5 JP 2015520493 A JP2015520493 A JP 2015520493A JP 2015520493 A JP2015520493 A JP 2015520493A JP 2015522214 A5 JP2015522214 A5 JP 2015522214A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- electrode
- integrated circuit
- silicide
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims 26
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 20
- 229910021332 silicide Inorganic materials 0.000 claims 20
- 229910052751 metal Inorganic materials 0.000 claims 15
- 239000002184 metal Substances 0.000 claims 15
- 229910052581 Si3N4 Inorganic materials 0.000 claims 14
- 239000003990 capacitor Substances 0.000 claims 14
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 14
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 14
- 230000000903 blocking effect Effects 0.000 claims 11
- 238000000151 deposition Methods 0.000 claims 10
- 229920005591 polysilicon Polymers 0.000 claims 10
- 235000012239 silicon dioxide Nutrition 0.000 claims 10
- 239000000377 silicon dioxide Substances 0.000 claims 10
- 239000004065 semiconductor Substances 0.000 claims 9
- 238000002955 isolation Methods 0.000 claims 5
- 239000004020 conductor Substances 0.000 claims 4
- 150000004767 nitrides Chemical class 0.000 claims 4
- 229910017052 cobalt Inorganic materials 0.000 claims 3
- 239000010941 cobalt Substances 0.000 claims 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical group [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical group [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims 2
- 230000005641 tunneling Effects 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- -1 Step Chemical compound 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/534,865 US8779550B2 (en) | 2012-06-27 | 2012-06-27 | Analog floating-gate capacitor with improved data retention in a silicided integrated circuit |
| US13/534,865 | 2012-06-27 | ||
| PCT/US2013/048139 WO2014004797A1 (en) | 2012-06-27 | 2013-06-27 | Silicided integrated circuit with data retaining floating-gate capacitor |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015522214A JP2015522214A (ja) | 2015-08-03 |
| JP2015522214A5 true JP2015522214A5 (enExample) | 2016-08-04 |
| JP6529906B2 JP6529906B2 (ja) | 2019-06-12 |
Family
ID=49777194
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015520493A Active JP6529906B2 (ja) | 2012-06-27 | 2013-06-27 | データ保持フローティングゲートキャパシタを備えるシリサイド化集積回路 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US8779550B2 (enExample) |
| EP (1) | EP2867921A4 (enExample) |
| JP (1) | JP6529906B2 (enExample) |
| CN (1) | CN104428895A (enExample) |
| WO (1) | WO2014004797A1 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150364480A1 (en) * | 2014-06-12 | 2015-12-17 | Texas Instruments Incorporated | Reducing Retention Loss in Analog Floating Gate Memory |
| US9882065B2 (en) | 2014-06-27 | 2018-01-30 | Texas Instruments Incorporated | Analog floating-gate atmometer |
| US9787263B2 (en) | 2015-11-23 | 2017-10-10 | Texas Instruments Incorporated | Mismatch correction in differential amplifiers using analog floating gate transistors |
| FR3085540B1 (fr) * | 2018-08-31 | 2020-09-25 | St Microelectronics Rousset | Dispositif integre de mesure temporelle a constante de temps ultra longue et procede de fabrication |
| US12094524B2 (en) * | 2020-01-30 | 2024-09-17 | Texas Instruments Incorporated | Computation in-memory using 6-transistor bit cells |
| CN114335342B (zh) * | 2021-12-16 | 2025-05-13 | 上海华虹宏力半导体制造有限公司 | 一种ppm电容器及其制备方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3120983B2 (ja) * | 1988-05-03 | 2000-12-25 | テキサス インスツルメンツ インコーポレイテツド | 集積回路中のキャパシタ |
| JP3700298B2 (ja) * | 1996-12-10 | 2005-09-28 | ソニー株式会社 | 半導体装置およびその製造方法 |
| US6617204B2 (en) * | 2001-08-13 | 2003-09-09 | Macronix International Co., Ltd. | Method of forming the protective film to prevent nitride read only memory cell charging |
| US6881999B2 (en) * | 2002-03-21 | 2005-04-19 | Samsung Electronics Co., Ltd. | Semiconductor device with analog capacitor and method of fabricating the same |
| CN1249791C (zh) * | 2002-09-24 | 2006-04-05 | 茂德科技股份有限公司 | 介电层的制造方法 |
| KR100480469B1 (ko) * | 2002-10-17 | 2005-04-07 | 동부아남반도체 주식회사 | 반도체 소자내 커패시터 제조방법 |
| US6964901B2 (en) * | 2003-06-03 | 2005-11-15 | Micron Technology, Inc. | Methods of forming rugged electrically conductive surfaces and layers |
| CN1610096A (zh) * | 2003-10-21 | 2005-04-27 | 上海宏力半导体制造有限公司 | 利用自行对准金属硅化物制程形成多晶硅电容器的方法 |
| KR100654350B1 (ko) * | 2005-01-26 | 2006-12-08 | 삼성전자주식회사 | 실리사이드막을 구비하는 반도체 소자의 제조 방법 및이에 의해 제조된 반도체 소자 |
| KR100772262B1 (ko) * | 2006-07-28 | 2007-11-01 | 동부일렉트로닉스 주식회사 | 반도체 소자의 살리사이드 방지막 제조 방법 |
| US8178915B1 (en) | 2011-03-23 | 2012-05-15 | Texas Instruments Incorporated | Unitary floating-gate electrode with both N-type and P-type gates |
-
2012
- 2012-06-27 US US13/534,865 patent/US8779550B2/en active Active
-
2013
- 2013-06-27 JP JP2015520493A patent/JP6529906B2/ja active Active
- 2013-06-27 CN CN201380033756.XA patent/CN104428895A/zh active Pending
- 2013-06-27 EP EP13808475.1A patent/EP2867921A4/en not_active Withdrawn
- 2013-06-27 WO PCT/US2013/048139 patent/WO2014004797A1/en not_active Ceased
-
2014
- 2014-06-11 US US14/301,766 patent/US8975135B2/en active Active
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