JP6523767B2 - 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 - Google Patents

荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 Download PDF

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Publication number
JP6523767B2
JP6523767B2 JP2015087042A JP2015087042A JP6523767B2 JP 6523767 B2 JP6523767 B2 JP 6523767B2 JP 2015087042 A JP2015087042 A JP 2015087042A JP 2015087042 A JP2015087042 A JP 2015087042A JP 6523767 B2 JP6523767 B2 JP 6523767B2
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Japan
Prior art keywords
correction
coefficient
proximity effect
irradiation
pattern
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JP2015087042A
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Japanese (ja)
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JP2016207815A (ja
JP2016207815A5 (enExample
Inventor
加藤　靖雄
靖雄 加藤
誠史 伊勢
誠史 伊勢
亮 川名
亮 川名
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Nuflare Technology Inc
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Nuflare Technology Inc
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Priority to JP2015087042A priority Critical patent/JP6523767B2/ja
Priority to US15/082,063 priority patent/US9899187B2/en
Priority to TW105110925A priority patent/TWI611250B/zh
Priority to KR1020160048667A priority patent/KR101843056B1/ko
Publication of JP2016207815A publication Critical patent/JP2016207815A/ja
Publication of JP2016207815A5 publication Critical patent/JP2016207815A5/ja
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. program control
    • H01J37/3023—Program control
    • H01J37/3026—Patterning strategy
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G03F7/2061—Electron scattering (proximity) correction or prevention methods
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G03F7/70441—Optical proximity correction [OPC]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30455—Correction during exposure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31769—Proximity effect correction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31793—Problems associated with lithography
    • H01J2237/31796—Problems associated with lithography affecting resists

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2015087042A 2015-04-21 2015-04-21 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 Active JP6523767B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2015087042A JP6523767B2 (ja) 2015-04-21 2015-04-21 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
US15/082,063 US9899187B2 (en) 2015-04-21 2016-03-28 Charged particle beam writing apparatus and charged particle beam writing method
TW105110925A TWI611250B (zh) 2015-04-21 2016-04-07 帶電粒子束描繪裝置及帶電粒子束描繪方法
KR1020160048667A KR101843056B1 (ko) 2015-04-21 2016-04-21 하전 입자빔 묘화 장치 및 하전 입자빔 묘화 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015087042A JP6523767B2 (ja) 2015-04-21 2015-04-21 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法

Publications (3)

Publication Number Publication Date
JP2016207815A JP2016207815A (ja) 2016-12-08
JP2016207815A5 JP2016207815A5 (enExample) 2018-04-19
JP6523767B2 true JP6523767B2 (ja) 2019-06-05

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JP2015087042A Active JP6523767B2 (ja) 2015-04-21 2015-04-21 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法

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Country Link
US (1) US9899187B2 (enExample)
JP (1) JP6523767B2 (enExample)
KR (1) KR101843056B1 (enExample)
TW (1) TWI611250B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6851181B2 (ja) * 2016-11-09 2021-03-31 株式会社ニューフレアテクノロジー マルチビーム光学系の調整方法
JP2018078251A (ja) 2016-11-11 2018-05-17 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置
JP7002243B2 (ja) * 2017-08-04 2022-01-20 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
JP6863208B2 (ja) * 2017-09-29 2021-04-21 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
JP7194572B2 (ja) * 2018-12-04 2022-12-22 株式会社ニューフレアテクノロジー マルチ電子ビーム検査装置
JP7159970B2 (ja) * 2019-05-08 2022-10-25 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画方法及び荷電粒子ビーム描画装置
JP7196792B2 (ja) * 2019-07-11 2022-12-27 株式会社ニューフレアテクノロジー マルチビーム描画方法及びマルチビーム描画装置
JP7238672B2 (ja) * 2019-07-25 2023-03-14 株式会社ニューフレアテクノロジー マルチビーム描画方法及びマルチビーム描画装置
DE112021002512T5 (de) * 2020-04-27 2023-03-02 Nuflare Technology, Inc. Schreibverfahren für geladenen Partikelstrahl und Einrichtung für Ladungspartikelstrahlschreiben
WO2023209825A1 (ja) * 2022-04-26 2023-11-02 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置、マルチ荷電粒子ビーム描画方法、及びプログラムを記録した読み取り可能な記録媒体

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3330306B2 (ja) * 1997-05-14 2002-09-30 東芝機械株式会社 荷電ビーム描画方法
KR100459697B1 (ko) * 2001-12-27 2004-12-04 삼성전자주식회사 가변적인 후방 산란 계수를 이용하는 전자빔 노광 방법 및이를 기록한 컴퓨터로 읽을 수 있는 기록 매체
EP1732107A4 (en) * 2004-03-30 2009-05-13 Fujitsu Microelectronics Ltd METHOD FOR CORRECTING ELECTRON BEAM EXPOSURE DATA
JP5079410B2 (ja) 2007-07-06 2012-11-21 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP2010225811A (ja) * 2009-03-23 2010-10-07 Nuflare Technology Inc 荷電粒子ビーム描画方法
JP5530688B2 (ja) 2009-09-18 2014-06-25 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置およびその近接効果補正方法
JP5647834B2 (ja) * 2010-08-31 2015-01-07 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置およびその照射量補正方法
JP5636238B2 (ja) 2010-09-22 2014-12-03 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP5576332B2 (ja) * 2011-04-06 2014-08-20 株式会社アドバンテスト 電子ビーム露光装置及び電子ビーム露光方法
JP5871558B2 (ja) * 2011-10-20 2016-03-01 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP5841819B2 (ja) * 2011-11-30 2016-01-13 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP5985852B2 (ja) * 2012-03-27 2016-09-06 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
TWI534528B (zh) 2013-03-27 2016-05-21 紐富來科技股份有限公司 Drawing an amount of the charged particle beam to obtain the modulation factor of a charged particle beam irradiation apparatus and method
JP6283180B2 (ja) * 2013-08-08 2018-02-21 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法

Also Published As

Publication number Publication date
KR20160125313A (ko) 2016-10-31
KR101843056B1 (ko) 2018-03-28
US20160314933A1 (en) 2016-10-27
US9899187B2 (en) 2018-02-20
TWI611250B (zh) 2018-01-11
TW201708929A (zh) 2017-03-01
JP2016207815A (ja) 2016-12-08

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