JP6506536B2 - 半導体装置及びその製造方法、ならびにカメラ - Google Patents

半導体装置及びその製造方法、ならびにカメラ Download PDF

Info

Publication number
JP6506536B2
JP6506536B2 JP2014229121A JP2014229121A JP6506536B2 JP 6506536 B2 JP6506536 B2 JP 6506536B2 JP 2014229121 A JP2014229121 A JP 2014229121A JP 2014229121 A JP2014229121 A JP 2014229121A JP 6506536 B2 JP6506536 B2 JP 6506536B2
Authority
JP
Japan
Prior art keywords
region
pattern density
semiconductor device
conductive member
pixel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2014229121A
Other languages
English (en)
Japanese (ja)
Other versions
JP2016092367A (ja
JP2016092367A5 (https=
Inventor
圭亮 伊藤
圭亮 伊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2014229121A priority Critical patent/JP6506536B2/ja
Priority to US14/918,946 priority patent/US9496175B2/en
Publication of JP2016092367A publication Critical patent/JP2016092367A/ja
Publication of JP2016092367A5 publication Critical patent/JP2016092367A5/ja
Application granted granted Critical
Publication of JP6506536B2 publication Critical patent/JP6506536B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/069—Manufacture or treatment of conductive parts of the interconnections by forming self-aligned vias or self-aligned contact plugs
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/63—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current
    • H04N25/633—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current by using optical black pixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8027—Geometry of the photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/062—Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
JP2014229121A 2014-11-11 2014-11-11 半導体装置及びその製造方法、ならびにカメラ Expired - Fee Related JP6506536B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2014229121A JP6506536B2 (ja) 2014-11-11 2014-11-11 半導体装置及びその製造方法、ならびにカメラ
US14/918,946 US9496175B2 (en) 2014-11-11 2015-10-21 Semiconductor device, method of manufacturing the same and camera

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014229121A JP6506536B2 (ja) 2014-11-11 2014-11-11 半導体装置及びその製造方法、ならびにカメラ

Publications (3)

Publication Number Publication Date
JP2016092367A JP2016092367A (ja) 2016-05-23
JP2016092367A5 JP2016092367A5 (https=) 2017-12-07
JP6506536B2 true JP6506536B2 (ja) 2019-04-24

Family

ID=55912821

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014229121A Expired - Fee Related JP6506536B2 (ja) 2014-11-11 2014-11-11 半導体装置及びその製造方法、ならびにカメラ

Country Status (2)

Country Link
US (1) US9496175B2 (https=)
JP (1) JP6506536B2 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106205398B (zh) * 2016-09-29 2020-06-12 昆山工研院新型平板显示技术中心有限公司 一种柔性折叠显示屏及制备方法
KR102451725B1 (ko) * 2017-12-20 2022-10-07 삼성디스플레이 주식회사 디스플레이 장치
JP2021136320A (ja) * 2020-02-26 2021-09-13 キオクシア株式会社 半導体装置およびその製造方法
CN115152024B (zh) * 2020-02-28 2025-08-26 京瓷株式会社 光检测装置
JP7690308B2 (ja) 2021-03-31 2025-06-10 キヤノン株式会社 光電変換装置、光電変換システム、および移動体

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3348327B2 (ja) * 1995-02-13 2002-11-20 ソニー株式会社 多層配線形成方法および構造
US6057899A (en) * 1996-07-04 2000-05-02 Pioneer Electronic Corporation Lighting optical system
JP3249077B2 (ja) * 1996-10-18 2002-01-21 キヤノン株式会社 マトリクス基板と液晶装置
US6093631A (en) * 1998-01-15 2000-07-25 International Business Machines Corporation Dummy patterns for aluminum chemical polishing (CMP)
WO2004097916A1 (ja) * 2003-04-30 2004-11-11 Fujitsu Limited 半導体装置の製造方法、半導体ウエハおよび半導体装置
JP4338614B2 (ja) * 2004-09-29 2009-10-07 シャープ株式会社 半導体装置およびその製造方法
JP2006165040A (ja) * 2004-12-02 2006-06-22 Renesas Technology Corp 半導体装置及び半導体装置のパターン設計方法
JP5269454B2 (ja) * 2008-03-25 2013-08-21 株式会社東芝 固体撮像素子
JP2010182869A (ja) * 2009-02-05 2010-08-19 Elpida Memory Inc 半導体装置の製造方法
JP5563257B2 (ja) * 2009-08-28 2014-07-30 キヤノン株式会社 光電変換装置、撮像システム、及び光電変換装置の製造方法
JP5513872B2 (ja) * 2009-12-18 2014-06-04 株式会社東芝 固体撮像装置
JP2011216865A (ja) * 2010-03-17 2011-10-27 Canon Inc 固体撮像装置
JP2013069958A (ja) * 2011-09-26 2013-04-18 Sony Corp 撮像素子、撮像装置、並びに、製造装置および方法
JP2013149758A (ja) * 2012-01-18 2013-08-01 Canon Inc 固体撮像装置およびその製造方法ならびにカメラ
JP2014045088A (ja) * 2012-08-27 2014-03-13 Canon Inc 半導体装置の製造方法

Also Published As

Publication number Publication date
JP2016092367A (ja) 2016-05-23
US20160133516A1 (en) 2016-05-12
US9496175B2 (en) 2016-11-15

Similar Documents

Publication Publication Date Title
CN102194844B (zh) 固态图像传感器
US10535530B2 (en) Patterning method
JP6506536B2 (ja) 半導体装置及びその製造方法、ならびにカメラ
US9402040B2 (en) Solid-state imaging device
US9564399B2 (en) Solid state image sensor and method for manufacturing the same
US20170243819A1 (en) Stacked device, manufacturing method, and electronic instrument
US9929086B2 (en) Semiconductor device
US20150069564A1 (en) Imaging device, apparatus and method for producing the same and electronic apparatus
US9601540B2 (en) Method for producing semiconductor device
US8334167B2 (en) Method of manufacturing photoelectric conversion device
JP5159120B2 (ja) 光電変換装置およびその製造方法
JP6539123B2 (ja) 固体撮像装置及びその製造方法ならびにカメラ
JP5563257B2 (ja) 光電変換装置、撮像システム、及び光電変換装置の製造方法
JP2016058599A (ja) 撮像装置の製造方法
JP5950531B2 (ja) 半導体装置の製造方法及び半導体ウエハ
JP5389208B2 (ja) 光電変換装置
JP2004071790A (ja) 固体撮像素子及びその製造方法
JP2015207716A (ja) 固体撮像装置、その製造方法およびカメラ
US20160211405A1 (en) Method of manufacturing semiconductor device
JP2017011038A (ja) 固体撮像装置の製造方法
JP2009016477A (ja) 半導体装置の製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20171025

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20171025

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20180712

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20180907

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20180926

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20190301

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20190329

R151 Written notification of patent or utility model registration

Ref document number: 6506536

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151

LAPS Cancellation because of no payment of annual fees