JP6505693B2 - ナノ構造及びナノ構造化物品の作製方法 - Google Patents

ナノ構造及びナノ構造化物品の作製方法 Download PDF

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Publication number
JP6505693B2
JP6505693B2 JP2016529853A JP2016529853A JP6505693B2 JP 6505693 B2 JP6505693 B2 JP 6505693B2 JP 2016529853 A JP2016529853 A JP 2016529853A JP 2016529853 A JP2016529853 A JP 2016529853A JP 6505693 B2 JP6505693 B2 JP 6505693B2
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Prior art keywords
substrate
plasma
film
electrode
etching
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JP2016529853A
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Japanese (ja)
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JP2016532576A (ja
JP2016532576A5 (enExample
Inventor
エム．デイビッド モーゼス
エム．デイビッド モーゼス
ユイ ター−ホワ
ユイ ター−ホワ
エス．ベイツ ダニエル
エス．ベイツ ダニエル
セス ジェイシュリー
セス ジェイシュリー
エス．バーガー マイケル
エス．バーガー マイケル
フランケ カーステン
フランケ カーステン
エフ．ツェントマイアー ゼバスチャン
エフ．ツェントマイアー ゼバスチャン
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3M Innovative Properties Co
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3M Innovative Properties Co
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C23C16/0245—Pretreatment of the material to be coated by cleaning or etching by etching with a plasma
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
    • B81C1/00031—Regular or irregular arrays of nanoscale structures, e.g. etch mask layer
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0128—Processes for removing material
    • B81C2201/013—Etching
    • B81C2201/0132—Dry etching, i.e. plasma etching, barrel etching, reactive ion etching [RIE], sputter etching or ion milling
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/302—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier the adhesive being pressure-sensitive, i.e. tacky at temperatures inferior to 30°C
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F24—HEATING; RANGES; VENTILATING
    • F24S—SOLAR HEAT COLLECTORS; SOLAR HEAT SYSTEMS
    • F24S70/00—Details of absorbing elements
    • F24S70/60—Details of absorbing elements characterised by the structure or construction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Laminated Bodies (AREA)
  • Drying Of Semiconductors (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Chemical Vapour Deposition (AREA)
JP2016529853A 2013-07-26 2014-07-23 ナノ構造及びナノ構造化物品の作製方法 Active JP6505693B2 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US201361858670P 2013-07-26 2013-07-26
US61/858,670 2013-07-26
US201361867733P 2013-08-20 2013-08-20
US61/867,733 2013-08-20
US201462018761P 2014-06-30 2014-06-30
US62/018,761 2014-06-30
PCT/US2014/047782 WO2015013387A1 (en) 2013-07-26 2014-07-23 Method of making a nanostructure and nanostructured articles

Publications (3)

Publication Number Publication Date
JP2016532576A JP2016532576A (ja) 2016-10-20
JP2016532576A5 JP2016532576A5 (enExample) 2017-08-17
JP6505693B2 true JP6505693B2 (ja) 2019-04-24

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JP2016529853A Active JP6505693B2 (ja) 2013-07-26 2014-07-23 ナノ構造及びナノ構造化物品の作製方法

Country Status (8)

Country Link
US (1) US10119190B2 (enExample)
EP (1) EP3024777B1 (enExample)
JP (1) JP6505693B2 (enExample)
KR (2) KR20160037961A (enExample)
CN (1) CN105431376B (enExample)
BR (1) BR112016001710A2 (enExample)
SG (2) SG10201704677QA (enExample)
WO (1) WO2015013387A1 (enExample)

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KR20170125344A (ko) 2015-02-27 2017-11-14 쓰리엠 이노베이티브 프로퍼티즈 컴파니 양면 코팅 테이프
EP3313458A1 (en) 2015-06-29 2018-05-02 3M Innovative Properties Company Anti-microbial articles and methods of using same
TWI769988B (zh) 2015-10-07 2022-07-11 美商3M新設資產公司 拋光墊與系統及其製造與使用方法
EP3373985B1 (en) 2015-11-13 2021-03-17 3M Innovative Properties Company Anti-microbial articles and methods of using same
CN108430524B (zh) 2015-11-13 2021-07-20 3M创新有限公司 抗微生物制品及其使用方法
WO2017193369A1 (en) * 2016-05-13 2017-11-16 3M Innovative Properties Company Thermally stable siloxane-based protection film
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CN106549074A (zh) * 2016-12-08 2017-03-29 上海空间电源研究所 一种用于临近空间环境的薄硅太阳电池组件及其制备方法
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CN114171641B (zh) * 2021-11-30 2024-05-31 北京燕东微电子科技有限公司 氧化钒薄膜的刻蚀方法与半导体器件的制造方法

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Also Published As

Publication number Publication date
SG10201704677QA (en) 2017-07-28
KR20210151999A (ko) 2021-12-14
EP3024777A1 (en) 2016-06-01
KR20160037961A (ko) 2016-04-06
SG11201600606TA (en) 2016-02-26
EP3024777A4 (en) 2017-01-11
CN105431376A (zh) 2016-03-23
US10119190B2 (en) 2018-11-06
JP2016532576A (ja) 2016-10-20
CN105431376B (zh) 2018-08-31
BR112016001710A2 (pt) 2017-08-01
US20170067150A1 (en) 2017-03-09
EP3024777B1 (en) 2024-05-15
WO2015013387A1 (en) 2015-01-29

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