JP6502193B2 - シリコン微結晶複合体膜、熱電材料及びそれらの製造方法 - Google Patents
シリコン微結晶複合体膜、熱電材料及びそれらの製造方法 Download PDFInfo
- Publication number
- JP6502193B2 JP6502193B2 JP2015129045A JP2015129045A JP6502193B2 JP 6502193 B2 JP6502193 B2 JP 6502193B2 JP 2015129045 A JP2015129045 A JP 2015129045A JP 2015129045 A JP2015129045 A JP 2015129045A JP 6502193 B2 JP6502193 B2 JP 6502193B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- microcrystalline
- composite film
- silicide
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 84
- 229910052710 silicon Inorganic materials 0.000 title claims description 83
- 239000010703 silicon Substances 0.000 title claims description 83
- 239000002131 composite material Substances 0.000 title claims description 56
- 239000000463 material Substances 0.000 title claims description 46
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 77
- 239000013078 crystal Substances 0.000 claims description 58
- 229910021332 silicide Inorganic materials 0.000 claims description 45
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 45
- 229910052742 iron Inorganic materials 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 16
- 239000013081 microcrystal Substances 0.000 claims description 15
- 229910052796 boron Inorganic materials 0.000 claims description 10
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 5
- 229910052698 phosphorus Inorganic materials 0.000 claims description 5
- 239000011574 phosphorus Substances 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052787 antimony Inorganic materials 0.000 claims description 4
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052785 arsenic Inorganic materials 0.000 claims description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 4
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical group [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 claims description 4
- 239000012528 membrane Substances 0.000 claims description 4
- 229910000676 Si alloy Inorganic materials 0.000 claims description 3
- XWHPIFXRKKHEKR-UHFFFAOYSA-N iron silicon Chemical compound [Si].[Fe] XWHPIFXRKKHEKR-UHFFFAOYSA-N 0.000 claims description 2
- 238000005191 phase separation Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 description 72
- 239000002159 nanocrystal Substances 0.000 description 43
- 238000010438 heat treatment Methods 0.000 description 19
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 17
- 239000012071 phase Substances 0.000 description 15
- 238000006243 chemical reaction Methods 0.000 description 12
- 229910005329 FeSi 2 Inorganic materials 0.000 description 8
- 238000004220 aggregation Methods 0.000 description 8
- 230000002776 aggregation Effects 0.000 description 8
- 229910045601 alloy Inorganic materials 0.000 description 8
- 239000000956 alloy Substances 0.000 description 8
- 229910005347 FeSi Inorganic materials 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 239000011800 void material Substances 0.000 description 7
- 229910017082 Fe-Si Inorganic materials 0.000 description 6
- 229910017133 Fe—Si Inorganic materials 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 239000000523 sample Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 229910000808 amorphous metal alloy Inorganic materials 0.000 description 4
- 239000002086 nanomaterial Substances 0.000 description 4
- 229910021350 transition metal silicide Inorganic materials 0.000 description 4
- 230000004913 activation Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 239000002105 nanoparticle Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- 238000001878 scanning electron micrograph Methods 0.000 description 3
- 229910018619 Si-Fe Inorganic materials 0.000 description 2
- 229910008289 Si—Fe Inorganic materials 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 229910021334 nickel silicide Inorganic materials 0.000 description 2
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 230000001603 reducing effect Effects 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- QNRATNLHPGXHMA-XZHTYLCXSA-N (r)-(6-ethoxyquinolin-4-yl)-[(2s,4s,5r)-5-ethyl-1-azabicyclo[2.2.2]octan-2-yl]methanol;hydrochloride Chemical compound Cl.C([C@H]([C@H](C1)CC)C2)CN1[C@@H]2[C@H](O)C1=CC=NC2=CC=C(OCC)C=C21 QNRATNLHPGXHMA-XZHTYLCXSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910005883 NiSi Inorganic materials 0.000 description 1
- 229910005881 NiSi 2 Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910008071 Si-Ni Inorganic materials 0.000 description 1
- 229910006300 Si—Ni Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000002772 conduction electron Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000005476 size effect Effects 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
- 229910006542 α-FeSi Inorganic materials 0.000 description 1
- 229910006585 β-FeSi Inorganic materials 0.000 description 1
Images
Landscapes
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Description
ZT=S2σT/κ
本発明の第1の実施の形態について、図1を参照して以下説明する。
図2に、Si<100>結晶層上にエピタキシャル成長させた本実施の形態のシリコン微結晶複合体膜のSEM(走査型電子顕微鏡)像を示す。前記実施例の合金膜が515nmの場合の例である。図2(1)は実際のSEM像で、(2)は、この像の微細構造を説明するための絵である。図2に示すように、SEM像において白く見える20nm−300nmの鉄シリサイド相((2)ではドット模様)と、グレーにコントラストされたSi相((2)ではグレーもしくは細かいドット模様)と、黒くコントラストされたボイド(孔)((2)では黒)とが、分布した組織となっている。Si相に、鉄シリサイド相とボイドが分散している様子がわかる。
ナノボイドを導入したシリコン微結晶複合体膜において、膜厚が500〜600nmの薄膜を複数作製して、走査型熱プローブ法による室温熱伝導率の測定を行った。測定結果は、およそ1.7W/mKであった。Si−Niシリサイドの微結晶複合体膜では、2.3W/mK以上の値を示すので、Si−Feシリサイドの微結晶複合体膜は、熱伝導率低減効果が高い。
図4に、前記実施例のシリコン微結晶複合体膜の熱電性能指数(ZT)の温度依存性を示す。前記実施例の合金膜が515nmの場合である。図中、本実施の形態は、FeSi20−2%Bの配向制御有り(黒四角印)であった。ZTは、室温で0.42、500℃の高温で1.0である。FeSi20−2%Bの配向制御無し(白抜き四角印)の場合(比較例1という。)、ZTは、室温で0.15、500℃の高温で0.48であった。NiSi20−2%Bの配向制御有り(黒三角印)の場合(比較例2という。)、ZTは、室温で0.25、500℃の高温で0.65であった。
2 基板表面のSi結晶層
3 Si−Fe非晶質層
4 シリコン微結晶と鉄シリサイド微結晶の複合結晶層
Claims (8)
- 結晶配向したシリコン微結晶からなる領域、及び鉄シリサイド微結晶からなる領域を備えることを特徴とするシリコン微結晶複合体膜。
- 前記鉄シリサイド微結晶が正方晶鉄シリサイドであることを特徴とする請求項1記載のシリコン微結晶複合体膜。
- 複数のナノボイドが存在することを特徴とする請求項1記載のシリコン微結晶複合体膜。
- 請求項1乃至3のいずれか1に記載の前記シリコン微結晶複合体膜を備える熱電材料。
- 前記シリコン微結晶は、リン、ヒ素、アンチモンのいずれかを含有するn型半導体であることを特徴とする請求項4記載の熱電材料。
- 前記シリコン微結晶は、ホウ素、アルミニウムのいずれかを含有するp型半導体であることを特徴とする請求項4記載の熱電材料。
- 表面にシリコン結晶を有する基板に成膜した、非晶質の鉄とシリコンの合金膜を、熱処理して、シリコン微結晶と鉄シリサイド微結晶に相分離させることを特徴とする、シリコン微結晶複合体膜の製造方法。
- 請求項7記載の方法によりシリコン微結晶複合体膜を製造することを特徴とする熱電材料の製造方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015129045A JP6502193B2 (ja) | 2015-06-26 | 2015-06-26 | シリコン微結晶複合体膜、熱電材料及びそれらの製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015129045A JP6502193B2 (ja) | 2015-06-26 | 2015-06-26 | シリコン微結晶複合体膜、熱電材料及びそれらの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017017068A JP2017017068A (ja) | 2017-01-19 |
JP6502193B2 true JP6502193B2 (ja) | 2019-04-17 |
Family
ID=57828294
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015129045A Active JP6502193B2 (ja) | 2015-06-26 | 2015-06-26 | シリコン微結晶複合体膜、熱電材料及びそれらの製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP6502193B2 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6657889B2 (ja) * | 2015-12-08 | 2020-03-04 | 富士通株式会社 | 熱電変換素子及びその製造方法 |
JP6768556B2 (ja) * | 2017-02-27 | 2020-10-14 | 株式会社日立製作所 | 熱電変換材料及びその製造方法 |
JP6966100B2 (ja) * | 2017-12-26 | 2021-11-10 | 国立研究開発法人科学技術振興機構 | シリコンバルク熱電変換材料 |
US11839158B2 (en) | 2019-01-18 | 2023-12-05 | Tosoh Corporation | Silicide alloy material and thermoelectric conversion device in which same is used |
JP7540150B2 (ja) * | 2019-01-18 | 2024-08-27 | 東ソー株式会社 | 珪化物系合金材料及びそれを用いた素子 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57169283A (en) * | 1981-04-11 | 1982-10-18 | Tdk Corp | Thermoelectric element |
JPH06144825A (ja) * | 1992-09-21 | 1994-05-24 | Isuzu Motors Ltd | 熱発電素子の製造方法 |
JP3348924B2 (ja) * | 1993-08-04 | 2002-11-20 | 株式会社テクノバ | 熱電半導体材料 |
JP3603087B2 (ja) * | 2001-05-25 | 2004-12-15 | 独立行政法人科学技術振興機構 | β−FeSi2素子の電極形成方法 |
JP5750727B2 (ja) * | 2010-09-16 | 2015-07-22 | 国立研究開発法人産業技術総合研究所 | ナノ結晶半導体材料及びその製造方法 |
-
2015
- 2015-06-26 JP JP2015129045A patent/JP6502193B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
JP2017017068A (ja) | 2017-01-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6502193B2 (ja) | シリコン微結晶複合体膜、熱電材料及びそれらの製造方法 | |
JP5818853B2 (ja) | n型窒化アルミニウム単結晶基板を用いた縦型窒化物半導体デバイス | |
Kurokawa et al. | Influences of substrate types and heat treatment conditions on structural and thermoelectric properties of nanocrystalline Bi2Te3 thin films formed by DC magnetron sputtering | |
WO2014196475A1 (ja) | ナノ粒子の製造方法、熱電材料の製造方法および熱電材料 | |
JP4806475B2 (ja) | 基板およびその製造方法 | |
TW200947522A (en) | Semiconductor substrate, method for manufacturing the same and electronic device | |
TW200941559A (en) | Semiconductor substrate and method of making same | |
KR101047610B1 (ko) | 코어/쉘 구조를 갖는 열전 나노와이어의 제조방법 | |
JP2013539234A (ja) | 改良されたp−nヘテロ接合を有する亜酸化銅半導体を含むマイクロエレクトロニクス構造 | |
Andzane et al. | Structure and Doping Determined Thermoelectric Properties of Bi 2 Se 3 Thin Films Deposited by Vapour–Solid Technique | |
KR101767242B1 (ko) | 수소 원자 또는 수소 이온을 함유하는 단결정 금속막 및 그 제조방법 | |
Kim et al. | Fabrication of full-color GaN-based light-emitting diodes on nearly lattice-matched flexible metal foils | |
CN106653822A (zh) | 在{110}<100>取向的衬底上的基于半导体的大面积的柔性电子器件 | |
JP5896494B2 (ja) | 触媒金属層の製造方法及びグラフェン素材の製造方法 | |
TW202239981A (zh) | 磁性材料、積層體及積層體之製造方法、以及熱電轉換元件及磁性感應器 | |
KR101303859B1 (ko) | 코어/쉘 구조를 갖는 열전 나노와이어의 제조 방법 | |
JP2006190749A (ja) | 半導体素子および電界効果トランジスタ | |
Wang et al. | Two-step molecular beam epitaxy growth of bismuth telluride nanoplate thin film with enhanced thermoelectric properties | |
JP2006073579A (ja) | 結晶性酸化亜鉛(ZnO)薄膜の形成方法 | |
JP6177588B2 (ja) | 金属酸化物半導体基板の作製方法及び発光デバイスの作製方法 | |
JP7076096B2 (ja) | シリコン系薄膜及びその製造方法 | |
Goyal et al. | Fabrication of ultrathin poly-crystalline SiGe-on-insulator layer for thermoelectric applications | |
JP4508761B2 (ja) | 半導体デバイスの製造方法 | |
Liu et al. | Arsenic doping of n-type β-FeSi2 films by sputtering method | |
TWI765829B (zh) | 以碲化鉍為主的n型熱電複合材料及其製法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180531 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20190212 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20190319 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20190320 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6502193 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |