JP6493825B2 - 半導体レーザ素子 - Google Patents

半導体レーザ素子 Download PDF

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Publication number
JP6493825B2
JP6493825B2 JP2014169819A JP2014169819A JP6493825B2 JP 6493825 B2 JP6493825 B2 JP 6493825B2 JP 2014169819 A JP2014169819 A JP 2014169819A JP 2014169819 A JP2014169819 A JP 2014169819A JP 6493825 B2 JP6493825 B2 JP 6493825B2
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Japan
Prior art keywords
length
main body
electrode pad
semiconductor laser
layer
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JP2014169819A
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English (en)
Japanese (ja)
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JP2016046393A (ja
JP2016046393A5 (https=
Inventor
岡田　亘正
亘正 岡田
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Sumitomo Electric Device Innovations Inc
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Sumitomo Electric Device Innovations Inc
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Application filed by Sumitomo Electric Device Innovations Inc filed Critical Sumitomo Electric Device Innovations Inc
Priority to JP2014169819A priority Critical patent/JP6493825B2/ja
Priority to US14/830,596 priority patent/US9466947B2/en
Publication of JP2016046393A publication Critical patent/JP2016046393A/ja
Publication of JP2016046393A5 publication Critical patent/JP2016046393A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H01S5/04257—Electrodes, e.g. characterised by the structure characterised by the configuration having positive and negative electrodes on the same side of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1039—Details on the cavity length
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0202—Cleaving
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1209—Sampled grating

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
JP2014169819A 2014-08-22 2014-08-22 半導体レーザ素子 Active JP6493825B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2014169819A JP6493825B2 (ja) 2014-08-22 2014-08-22 半導体レーザ素子
US14/830,596 US9466947B2 (en) 2014-08-22 2015-08-19 Semiconductor laser diode with shortened cavity length

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014169819A JP6493825B2 (ja) 2014-08-22 2014-08-22 半導体レーザ素子

Publications (3)

Publication Number Publication Date
JP2016046393A JP2016046393A (ja) 2016-04-04
JP2016046393A5 JP2016046393A5 (https=) 2017-09-07
JP6493825B2 true JP6493825B2 (ja) 2019-04-03

Family

ID=55349094

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014169819A Active JP6493825B2 (ja) 2014-08-22 2014-08-22 半導体レーザ素子

Country Status (2)

Country Link
US (1) US9466947B2 (https=)
JP (1) JP6493825B2 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6654503B2 (ja) * 2016-05-02 2020-02-26 日本電信電話株式会社 光半導体素子および半導体モノリシック型光回路
EP3324654A1 (en) 2016-11-17 2018-05-23 Giesecke+Devrient Mobile Security GmbH Integrating internet-of-things devices with sim and without sim
JP6809655B1 (ja) * 2020-03-16 2021-01-06 三菱電機株式会社 半導体装置および半導体装置の製造方法
JP7623263B2 (ja) * 2021-10-11 2025-01-28 浜松ホトニクス株式会社 半導体レーザ素子、半導体レーザ装置、及び半導体レーザ素子の製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58161389A (ja) * 1982-03-19 1983-09-24 Fujitsu Ltd 光半導体装置
EP0264225B1 (en) * 1986-10-07 1994-01-19 Sharp Kabushiki Kaisha A semiconductor laser device and a method for the production of the same
JP2827411B2 (ja) * 1990-03-13 1998-11-25 日本電気株式会社 光半導体素子及びその製造方法
JPH0529703A (ja) 1991-07-19 1993-02-05 Toshiba Corp 半導体レ−ザ素子
JPH11212041A (ja) * 1998-01-29 1999-08-06 Mitsubishi Electric Corp 半導体光素子
JP2003258369A (ja) * 2002-03-04 2003-09-12 Sony Corp 半導体レーザ素子、マルチビーム半導体レーザ、及び製造方法
US9966733B2 (en) * 2012-05-02 2018-05-08 Mellanox Technologies Silicon Photonics Inc. Integration of laser into optical platform

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JP2016046393A (ja) 2016-04-04
US9466947B2 (en) 2016-10-11
US20160056614A1 (en) 2016-02-25

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