JP2016046393A5 - - Google Patents

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Publication number
JP2016046393A5
JP2016046393A5 JP2014169819A JP2014169819A JP2016046393A5 JP 2016046393 A5 JP2016046393 A5 JP 2016046393A5 JP 2014169819 A JP2014169819 A JP 2014169819A JP 2014169819 A JP2014169819 A JP 2014169819A JP 2016046393 A5 JP2016046393 A5 JP 2016046393A5
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JP
Japan
Prior art keywords
length
laser
resonance structure
electrode pad
laser resonance
Prior art date
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Application number
JP2014169819A
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English (en)
Japanese (ja)
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JP2016046393A (ja
JP6493825B2 (ja
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Publication date
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Priority to JP2014169819A priority Critical patent/JP6493825B2/ja
Priority claimed from JP2014169819A external-priority patent/JP6493825B2/ja
Priority to US14/830,596 priority patent/US9466947B2/en
Publication of JP2016046393A publication Critical patent/JP2016046393A/ja
Publication of JP2016046393A5 publication Critical patent/JP2016046393A5/ja
Application granted granted Critical
Publication of JP6493825B2 publication Critical patent/JP6493825B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2014169819A 2014-08-22 2014-08-22 半導体レーザ素子 Active JP6493825B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2014169819A JP6493825B2 (ja) 2014-08-22 2014-08-22 半導体レーザ素子
US14/830,596 US9466947B2 (en) 2014-08-22 2015-08-19 Semiconductor laser diode with shortened cavity length

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014169819A JP6493825B2 (ja) 2014-08-22 2014-08-22 半導体レーザ素子

Publications (3)

Publication Number Publication Date
JP2016046393A JP2016046393A (ja) 2016-04-04
JP2016046393A5 true JP2016046393A5 (https=) 2017-09-07
JP6493825B2 JP6493825B2 (ja) 2019-04-03

Family

ID=55349094

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014169819A Active JP6493825B2 (ja) 2014-08-22 2014-08-22 半導体レーザ素子

Country Status (2)

Country Link
US (1) US9466947B2 (https=)
JP (1) JP6493825B2 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6654503B2 (ja) * 2016-05-02 2020-02-26 日本電信電話株式会社 光半導体素子および半導体モノリシック型光回路
EP3324654A1 (en) 2016-11-17 2018-05-23 Giesecke+Devrient Mobile Security GmbH Integrating internet-of-things devices with sim and without sim
JP6809655B1 (ja) * 2020-03-16 2021-01-06 三菱電機株式会社 半導体装置および半導体装置の製造方法
JP7623263B2 (ja) * 2021-10-11 2025-01-28 浜松ホトニクス株式会社 半導体レーザ素子、半導体レーザ装置、及び半導体レーザ素子の製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58161389A (ja) * 1982-03-19 1983-09-24 Fujitsu Ltd 光半導体装置
EP0264225B1 (en) * 1986-10-07 1994-01-19 Sharp Kabushiki Kaisha A semiconductor laser device and a method for the production of the same
JP2827411B2 (ja) * 1990-03-13 1998-11-25 日本電気株式会社 光半導体素子及びその製造方法
JPH0529703A (ja) 1991-07-19 1993-02-05 Toshiba Corp 半導体レ−ザ素子
JPH11212041A (ja) * 1998-01-29 1999-08-06 Mitsubishi Electric Corp 半導体光素子
JP2003258369A (ja) * 2002-03-04 2003-09-12 Sony Corp 半導体レーザ素子、マルチビーム半導体レーザ、及び製造方法
US9966733B2 (en) * 2012-05-02 2018-05-08 Mellanox Technologies Silicon Photonics Inc. Integration of laser into optical platform

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