JP6491509B2 - 固体撮像装置及びその製造方法 - Google Patents

固体撮像装置及びその製造方法 Download PDF

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Publication number
JP6491509B2
JP6491509B2 JP2015063370A JP2015063370A JP6491509B2 JP 6491509 B2 JP6491509 B2 JP 6491509B2 JP 2015063370 A JP2015063370 A JP 2015063370A JP 2015063370 A JP2015063370 A JP 2015063370A JP 6491509 B2 JP6491509 B2 JP 6491509B2
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Japan
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region
solid
gettering
imaging device
state imaging
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Japanese (ja)
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JP2016184624A5 (enExample
JP2016184624A (ja
Inventor
翼 金田
翼 金田
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Canon Inc
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Canon Inc
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Priority to JP2015063370A priority Critical patent/JP6491509B2/ja
Priority to US15/072,708 priority patent/US9704909B2/en
Publication of JP2016184624A publication Critical patent/JP2016184624A/ja
Publication of JP2016184624A5 publication Critical patent/JP2016184624A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H10W76/48—

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  • Solid State Image Pick-Up Elements (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
JP2015063370A 2015-03-25 2015-03-25 固体撮像装置及びその製造方法 Expired - Fee Related JP6491509B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2015063370A JP6491509B2 (ja) 2015-03-25 2015-03-25 固体撮像装置及びその製造方法
US15/072,708 US9704909B2 (en) 2015-03-25 2016-03-17 Image sensor and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015063370A JP6491509B2 (ja) 2015-03-25 2015-03-25 固体撮像装置及びその製造方法

Publications (3)

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JP2016184624A JP2016184624A (ja) 2016-10-20
JP2016184624A5 JP2016184624A5 (enExample) 2018-04-26
JP6491509B2 true JP6491509B2 (ja) 2019-03-27

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JP2015063370A Expired - Fee Related JP6491509B2 (ja) 2015-03-25 2015-03-25 固体撮像装置及びその製造方法

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US (1) US9704909B2 (enExample)
JP (1) JP6491509B2 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9006080B2 (en) * 2013-03-12 2015-04-14 Taiwan Semiconductor Manufacturing Company, Ltd. Varied STI liners for isolation structures in image sensing devices
US9450005B2 (en) * 2013-03-29 2016-09-20 Sony Corporation Image pickup device and image pickup apparatus
JP2018082295A (ja) 2016-11-16 2018-05-24 キヤノン株式会社 撮像装置及び撮像システム
JP2018098266A (ja) 2016-12-08 2018-06-21 キヤノン株式会社 光電変換装置、光電変換装置の製造方法およびカメラ
WO2018139154A1 (ja) * 2017-01-30 2018-08-02 株式会社ニコン 撮像素子および撮像素子の製造方法
JP2019102494A (ja) * 2017-11-28 2019-06-24 キヤノン株式会社 光電変換装置およびその製造方法、機器
JP7084735B2 (ja) * 2018-01-31 2022-06-15 キヤノン株式会社 半導体装置の製造方法
JP2019165066A (ja) 2018-03-19 2019-09-26 ソニーセミコンダクタソリューションズ株式会社 撮像素子、電子機器
JP7350583B2 (ja) 2019-09-12 2023-09-26 キオクシア株式会社 半導体記憶装置
KR102883579B1 (ko) 2019-12-09 2025-11-10 소니 세미컨덕터 솔루션즈 가부시키가이샤 고체 촬상 소자 및 전자 기기
CN110797368A (zh) * 2019-12-10 2020-02-14 上海微阱电子科技有限公司 图像传感器单元及其制备方法
JPWO2021187422A1 (enExample) * 2020-03-16 2021-09-23
US12046614B2 (en) * 2020-08-20 2024-07-23 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus and methods for effective impurity gettering
JP7592464B2 (ja) 2020-11-06 2024-12-02 キオクシア株式会社 半導体記憶装置
KR20230056454A (ko) 2021-10-20 2023-04-27 삼성전자주식회사 이미지 센서

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63248159A (ja) 1987-04-03 1988-10-14 Seiko Instr & Electronics Ltd 半導体受光装置
JPS63254764A (ja) 1987-04-13 1988-10-21 Fuji Photo Film Co Ltd 固体撮像装置
JP4534412B2 (ja) 2002-06-26 2010-09-01 株式会社ニコン 固体撮像装置
US7470944B2 (en) * 2002-06-26 2008-12-30 Nikon Corporation Solid-state image sensor
JP3840203B2 (ja) * 2002-06-27 2006-11-01 キヤノン株式会社 固体撮像装置及び固体撮像装置を用いたカメラシステム
JP4525144B2 (ja) * 2004-04-02 2010-08-18 ソニー株式会社 固体撮像素子及びその製造方法
JP4354931B2 (ja) * 2005-05-19 2009-10-28 パナソニック株式会社 固体撮像装置及びその製造方法
JP2008010544A (ja) 2006-06-28 2008-01-17 Renesas Technology Corp 固体撮像素子
US7781715B2 (en) * 2006-09-20 2010-08-24 Fujifilm Corporation Backside illuminated imaging device, semiconductor substrate, imaging apparatus and method for manufacturing backside illuminated imaging device
JP2009194269A (ja) * 2008-02-18 2009-08-27 Panasonic Corp 固体撮像装置およびその製造方法
US8815634B2 (en) * 2008-10-31 2014-08-26 Varian Semiconductor Equipment Associates, Inc. Dark currents and reducing defects in image sensors and photovoltaic junctions
JP5451098B2 (ja) * 2009-02-06 2014-03-26 キヤノン株式会社 半導体装置の製造方法
KR101544511B1 (ko) * 2009-04-21 2015-08-13 삼성전자주식회사 게터링 영역들을 갖는 이미지 센서의 제조 방법
JP2012204492A (ja) 2011-03-24 2012-10-22 Toshiba Corp 固体撮像装置

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Publication number Publication date
US9704909B2 (en) 2017-07-11
US20160284757A1 (en) 2016-09-29
JP2016184624A (ja) 2016-10-20

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