JP6491509B2 - 固体撮像装置及びその製造方法 - Google Patents

固体撮像装置及びその製造方法 Download PDF

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Publication number
JP6491509B2
JP6491509B2 JP2015063370A JP2015063370A JP6491509B2 JP 6491509 B2 JP6491509 B2 JP 6491509B2 JP 2015063370 A JP2015063370 A JP 2015063370A JP 2015063370 A JP2015063370 A JP 2015063370A JP 6491509 B2 JP6491509 B2 JP 6491509B2
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Japan
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region
solid
gettering
imaging device
state imaging
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JP2015063370A
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English (en)
Japanese (ja)
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JP2016184624A5 (enExample
JP2016184624A (ja
Inventor
翼 金田
翼 金田
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Canon Inc
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Canon Inc
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Priority to JP2015063370A priority Critical patent/JP6491509B2/ja
Priority to US15/072,708 priority patent/US9704909B2/en
Publication of JP2016184624A publication Critical patent/JP2016184624A/ja
Publication of JP2016184624A5 publication Critical patent/JP2016184624A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H01L23/26—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device including materials for absorbing or reacting with moisture or other undesired substances, e.g. getters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Element Separation (AREA)
JP2015063370A 2015-03-25 2015-03-25 固体撮像装置及びその製造方法 Expired - Fee Related JP6491509B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2015063370A JP6491509B2 (ja) 2015-03-25 2015-03-25 固体撮像装置及びその製造方法
US15/072,708 US9704909B2 (en) 2015-03-25 2016-03-17 Image sensor and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015063370A JP6491509B2 (ja) 2015-03-25 2015-03-25 固体撮像装置及びその製造方法

Publications (3)

Publication Number Publication Date
JP2016184624A JP2016184624A (ja) 2016-10-20
JP2016184624A5 JP2016184624A5 (enExample) 2018-04-26
JP6491509B2 true JP6491509B2 (ja) 2019-03-27

Family

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Family Applications (1)

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JP2015063370A Expired - Fee Related JP6491509B2 (ja) 2015-03-25 2015-03-25 固体撮像装置及びその製造方法

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US (1) US9704909B2 (enExample)
JP (1) JP6491509B2 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9006080B2 (en) * 2013-03-12 2015-04-14 Taiwan Semiconductor Manufacturing Company, Ltd. Varied STI liners for isolation structures in image sensing devices
KR102350138B1 (ko) * 2013-03-29 2022-01-14 소니그룹주식회사 촬상 소자 및 촬상 장치
JP2018082295A (ja) 2016-11-16 2018-05-24 キヤノン株式会社 撮像装置及び撮像システム
JP2018098266A (ja) 2016-12-08 2018-06-21 キヤノン株式会社 光電変換装置、光電変換装置の製造方法およびカメラ
CN109983582B (zh) * 2017-01-30 2023-10-20 株式会社尼康 摄像元件及摄像元件的制造方法
JP2019102494A (ja) * 2017-11-28 2019-06-24 キヤノン株式会社 光電変換装置およびその製造方法、機器
JP7084735B2 (ja) * 2018-01-31 2022-06-15 キヤノン株式会社 半導体装置の製造方法
JP2019165066A (ja) 2018-03-19 2019-09-26 ソニーセミコンダクタソリューションズ株式会社 撮像素子、電子機器
JP7350583B2 (ja) 2019-09-12 2023-09-26 キオクシア株式会社 半導体記憶装置
EP4075521A4 (en) * 2019-12-09 2023-01-11 Sony Semiconductor Solutions Corporation SOLID STATE IMAGE SENSOR AND ELECTRONIC DEVICE
CN110797368A (zh) * 2019-12-10 2020-02-14 上海微阱电子科技有限公司 图像传感器单元及其制备方法
JPWO2021187422A1 (enExample) * 2020-03-16 2021-09-23
US12046614B2 (en) * 2020-08-20 2024-07-23 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus and methods for effective impurity gettering
JP7592464B2 (ja) 2020-11-06 2024-12-02 キオクシア株式会社 半導体記憶装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63248159A (ja) 1987-04-03 1988-10-14 Seiko Instr & Electronics Ltd 半導体受光装置
JPS63254764A (ja) 1987-04-13 1988-10-21 Fuji Photo Film Co Ltd 固体撮像装置
US7470944B2 (en) * 2002-06-26 2008-12-30 Nikon Corporation Solid-state image sensor
JP4534412B2 (ja) 2002-06-26 2010-09-01 株式会社ニコン 固体撮像装置
JP3840203B2 (ja) * 2002-06-27 2006-11-01 キヤノン株式会社 固体撮像装置及び固体撮像装置を用いたカメラシステム
JP4525144B2 (ja) * 2004-04-02 2010-08-18 ソニー株式会社 固体撮像素子及びその製造方法
JP4354931B2 (ja) * 2005-05-19 2009-10-28 パナソニック株式会社 固体撮像装置及びその製造方法
JP2008010544A (ja) 2006-06-28 2008-01-17 Renesas Technology Corp 固体撮像素子
US7781715B2 (en) * 2006-09-20 2010-08-24 Fujifilm Corporation Backside illuminated imaging device, semiconductor substrate, imaging apparatus and method for manufacturing backside illuminated imaging device
JP2009194269A (ja) * 2008-02-18 2009-08-27 Panasonic Corp 固体撮像装置およびその製造方法
US8815634B2 (en) * 2008-10-31 2014-08-26 Varian Semiconductor Equipment Associates, Inc. Dark currents and reducing defects in image sensors and photovoltaic junctions
JP5451098B2 (ja) * 2009-02-06 2014-03-26 キヤノン株式会社 半導体装置の製造方法
KR101544511B1 (ko) * 2009-04-21 2015-08-13 삼성전자주식회사 게터링 영역들을 갖는 이미지 센서의 제조 방법
JP2012204492A (ja) 2011-03-24 2012-10-22 Toshiba Corp 固体撮像装置

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Publication number Publication date
JP2016184624A (ja) 2016-10-20
US9704909B2 (en) 2017-07-11
US20160284757A1 (en) 2016-09-29

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