JP6490623B2 - 有機電界発光表示素子及びその製造方法 - Google Patents
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/126—Shielding, e.g. light-blocking means over the TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
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- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Electroluminescent Light Sources (AREA)
- Optical Filters (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
50 第2基板
17R,17G,17B カラーフィルタ層
21R,21G,21B 画素電極
23 有機発光部
24 第1絶縁層
26 第2絶縁層
25 共通電極
27 光学補償層
28 バンク層
42 接着層
116 第1基板
150 第2基板
117R,117G,117B カラーフィルタ層
121R,121G,121B 画素電極
123 有機発光部
124 第1絶縁層
126 第2絶縁層
125 共通電極
127 光学補償層
128 バンク層
142 接着層
Claims (10)
- 複数の画素を含む第1基板及び第2基板と、
前記第1基板上に形成された薄膜トランジスタと、
前記薄膜トランジスタを含む前記第1基板上に形成された第1絶縁層と、
画素領域における前記第1絶縁層上に形成されたカラーフィルタ層と、
前記カラーフィルタ層を含む前記第1基板上に形成された第2絶縁層と、
前記第2絶縁層上に形成される光学補償層と、
前記各画素領域における前記光学補償層上に形成された画素電極と、
前記画素電極上に形成されて発光する有機発光部と、
前記有機発光部上に形成された共通電極と、
前記光学補償層に形成される複数の孔と
を含み、前記複数の孔は、カラーフィルタに対応する領域に形成されることを特徴とする、有機電界発光表示素子。 - 複数の画素を含む第1基板及び第2基板と、
前記第1基板上に形成された薄膜トランジスタと、
前記薄膜トランジスタを含む前記第1基板上に形成された第1絶縁層と、
画素領域における前記第1絶縁層上に形成されたカラーフィルタ層と、
前記カラーフィルタ層を含む前記第1基板上に形成された第2絶縁層であって、前記第1及び第2の絶縁層にドレインコンタクトホールが形成されて前記薄膜トランジスタのドレイン電極を露出する第2絶縁層と、
前記第2絶縁層上に形成され、水素非含有物質からなる光学補償層であって、前記ドレインコンタクトホール内の前記光学補償層は前記第1及び第2の絶縁層の側面をカバーし、
各画素領域における前記光学補償層上に形成され、前記ドレインコンタクトホールにおける前記ドレイン電極及び前記光学補償層と接する画素電極と、
前記画素電極上に形成されて発光する有機発光部と、
前記有機発光部上に形成された共通電極と
を含む有機電界発光表示素子。 - 前記光学補償層は、透明物質からなることを特徴とする請求項1または2に記載の有機電界発光表示素子。
- 前記光学補償層は、SiNx、ITO(Indium Tin Oxide)、IZO(Indium Zinc Oxide)からなる群から選択された物質で形成されることを特徴とする請求項3に記載の有機電界発光表示素子。
- 前記SiNxは、1500〜2000Åの厚さで積層されることを特徴とする請求項4に記載の有機電界発光表示素子。
- 複数の画素を含む第1基板及び第2基板を準備する段階と、
前記第1基板の各画素に薄膜トランジスタを形成する段階と、
前記薄膜トランジスタを含む前記第1基板上に第1絶縁層を形成する段階と、
画素領域における前記第1絶縁層上にカラーフィルタ層を形成する段階と、
前記カラーフィルタ層を含む前記第1基板上に第2絶縁層を形成する段階と、
光学補償層を前記第2絶縁層上に形成する段階と、
前記光学補償層をエッチングして前記カラーフィルタに対応する領域に複数の孔を形成する段階と、
各画素領域における前記光学補償層上に画素電極を形成する段階と、
前記画素電極上に光を発光する有機発光部を形成する段階と、
前記有機発光部上に共通電極を形成する段階と、
前記第1基板と前記第2基板とを貼り合わせる段階と
を含む、有機電界発光表示素子の製造方法。 - 前記光学補償層は、透明物質からなることを特徴とする請求項6に記載の有機電界発光表示素子の製造方法。
- 前記光学補償層は、SiNx、ITO(Indium Tin Oxide)、IZO(Indium Zinc Oxide)からなる群から選択された物質で形成されることを特徴とする請求項7に記載の有機電界発光表示素子の製造方法。
- 前記SiNxは、1500〜2000Åの厚さで積層されることを特徴とする請求項8に記載の有機電界発光表示素子の製造方法
- 前記画素電極を形成する段階の後に、形成された層を所定時間の間真空状態で真空キュアして、前記形成された層に含まれる異物を前記孔から排出する段階をさらに含むことを特徴とする請求項6に記載の有機電界発光表示素子の製造方法。
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KR10-2011-0134862 | 2011-12-14 | ||
KR1020110134862A KR101339000B1 (ko) | 2011-12-14 | 2011-12-14 | 유기전계발광 표시소자 및 그 제조방법 |
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US (1) | US8921837B2 (ja) |
JP (2) | JP2013125746A (ja) |
KR (1) | KR101339000B1 (ja) |
CN (1) | CN103165650B (ja) |
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KR20140074674A (ko) * | 2012-12-10 | 2014-06-18 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 이의 제조 방법 |
JP2016122672A (ja) | 2013-03-18 | 2016-07-07 | 出光興産株式会社 | 発光装置 |
KR102086393B1 (ko) * | 2013-11-21 | 2020-03-10 | 엘지디스플레이 주식회사 | 유기 발광 표시 장치 및 이의 제조 방법 |
KR102112649B1 (ko) * | 2013-11-25 | 2020-05-19 | 엘지디스플레이 주식회사 | 유기전계 발광소자 및 이의 리페어 방법 |
CN104733491B (zh) * | 2013-12-20 | 2017-12-15 | 昆山国显光电有限公司 | 一种有机发光显示装置及其制备方法 |
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JP2005200680A (ja) * | 2004-01-13 | 2005-07-28 | Serubakku:Kk | Cvd装置 |
KR20070054806A (ko) * | 2005-11-24 | 2007-05-30 | 삼성전자주식회사 | 유기 발광 표시 장치 |
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JP2009031393A (ja) * | 2007-07-25 | 2009-02-12 | Seiko Epson Corp | 電子装置及び光共振器 |
WO2010038514A1 (ja) * | 2008-10-02 | 2010-04-08 | シャープ株式会社 | 表示装置用基板、表示装置用基板の製造方法、表示装置、液晶表示装置、液晶表示装置の製造方法及び有機エレクトロルミネセンス表示装置 |
JP2010218718A (ja) * | 2009-03-13 | 2010-09-30 | Seiko Epson Corp | 表示装置および電子機器 |
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