JP6485766B2 - 構成要素を装着するための基板用連続式加熱炉およびダイボンダ - Google Patents
構成要素を装着するための基板用連続式加熱炉およびダイボンダ Download PDFInfo
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- JP6485766B2 JP6485766B2 JP2014228580A JP2014228580A JP6485766B2 JP 6485766 B2 JP6485766 B2 JP 6485766B2 JP 2014228580 A JP2014228580 A JP 2014228580A JP 2014228580 A JP2014228580 A JP 2014228580A JP 6485766 B2 JP6485766 B2 JP 6485766B2
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- channel
- heating furnace
- continuous heating
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- longitudinal slit
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- 239000000758 substrate Substances 0.000 title claims description 53
- 238000010438 heat treatment Methods 0.000 title claims description 38
- 230000001681 protective effect Effects 0.000 claims description 27
- 238000001816 cooling Methods 0.000 claims description 5
- 230000007704 transition Effects 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 33
- 229910000679 solder Inorganic materials 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 11
- 230000032258 transport Effects 0.000 description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrates to be conveyed not being semiconductor wafers or large planar substrates, e.g. chips, lead frames
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
- B23K1/0016—Brazing of electronic components
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/008—Soldering within a furnace
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K3/00—Tools, devices, or special appurtenances for soldering, e.g. brazing, or unsoldering, not specially adapted for particular methods
- B23K3/04—Heating appliances
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K3/00—Tools, devices, or special appurtenances for soldering, e.g. brazing, or unsoldering, not specially adapted for particular methods
- B23K3/08—Auxiliary devices therefor
- B23K3/087—Soldering or brazing jigs, fixtures or clamping means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/42—Printed circuits
Description
チャネルは、ベース、前方側壁、後方側壁および上部が境界であり、
ベースは、作業中に保護ガスを供給するために保護ガス源に接続可能な複数の第1の孔を有し、
チャネルの前方側壁は、長手スリットを備え、長手スリットは、通過方向に平行に延び、下エッジおよび上エッジが境界であり、
搬送システムは、基板をチャネルに通して搬送するための少なくとも1つのクランプを備え、
クランプは、チャネルの長手スリットに沿って前後に動くことができる。
各領域は、いくつかの第2の孔とつながっていてよく、
同じ領域の第2の孔は、互いに接続していてよく、別々の流量制御弁を介して保護ガス源に接続可能であってよい。
a)長手スリット11の下エッジ12を細いストリップで形成し、このストリップをチャネル2のベース4よりも所定の長さだけ低くする。
b)下エッジ12の細いストリップに溝14を形成し、第2の孔18をベース4および/または溝14の側壁に開ける。この実施形態を図2から図4に示している。
Claims (8)
- チャネル(2)、および基板(3)を前記チャネル(2)に通して搬送するための搬送システムを備えた加熱炉(1)を備える基板(3)用連続式加熱炉であって、
前記チャネル(2)は、ベース(4)、前方側壁(5)、後方側壁(6)および上部(7)が境界であり、
前記ベース(4)は、作業中に保護ガスを供給するために保護ガス源(9)に接続可能な複数の第1の孔(8)を有し、
前記チャネル(2)の前記前方側壁(5)は、長手スリット(11)を備え、該長手スリットは、通過方向(10)に平行に延び、下エッジ(12)および上エッジ(13)が境界であり、
前記搬送システムは、前記基板(3)を前記チャネル(2)に通して搬送するための少なくとも1つのクランプ(15)を備え、
前記クランプは、前記チャネル(2)の前記長手スリット(11)に沿って前後に動くことができる、
連続式加熱炉。 - 前記保護ガス源(9)に接続可能な複数の第2の孔(18)は、前記チャネル(2)に面している前記長手スリット(11)の前記下エッジ(12)側に配置される、請求項1に記載の連続式加熱炉。
- 前記長手スリット(11)の前記下エッジ(12)は、細いストリップで形成され、該ストリップは、前記チャネル(2)の前記ベース(4)よりも所定の長さだけ低い、請求項1に記載の連続式加熱炉。
- 前記長手スリット(11)の前記下エッジ(12)は、細いストリップで形成され、該ストリップは、前記チャネル(2)の前記ベース(4)よりも所定の長さだけ低い、請求項2に記載の連続式加熱炉。
- 前記長手スリット(11)の前記下エッジ(12)の前記細いストリップには溝(14)が形成され、前記第2の孔(18)は、前記溝(14)に開口している、請求項4に記載の連続式加熱炉。
- 前記チャネル(2)は、少なくとも2つの領域に分割され、前記溝(14)は、1つの領域から隣の領域までの少なくとも1つの移行点で、分離壁(19)で遮られる、請求項5に記載の連続式加熱炉。
- 前記チャネル(2)は、少なくとも2つの領域に分割され、
少なくとも1つの領域は、いくつかの前記第2の孔(18)とつながり、
同じ領域の前記第2の孔(18)は、互いに接続し、別々の流量制御弁(21)を介して前記保護ガス源(9)に接続可能である、請求項2、および4〜6のうちいずれか一項に記載の連続式加熱炉。 - 請求項1〜7のうちいずれか一項に記載の連続式加熱炉を備えるダイボンダであって、前記連続式加熱炉は、加熱領域および冷却領域を備え、該両領域はいくつかの領域に分割され、前記ダイボンダは、各領域に対して温度および搬送速度および/または休止時間を決定するパラメータを入力するように、かつ前記パラメータに従って前記基板を前記連続式加熱炉に通して搬送するようにプログラムされる、ダイボンダ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH01938/13A CH708881B1 (de) | 2013-11-20 | 2013-11-20 | Durchlaufofen für Substrate, die mit Bauteilen bestückt werden, und Die Bonder. |
CH01938/13 | 2013-11-20 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015103803A JP2015103803A (ja) | 2015-06-04 |
JP6485766B2 true JP6485766B2 (ja) | 2019-03-20 |
Family
ID=53029246
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014228580A Active JP6485766B2 (ja) | 2013-11-20 | 2014-11-11 | 構成要素を装着するための基板用連続式加熱炉およびダイボンダ |
Country Status (12)
Country | Link |
---|---|
US (1) | US9666460B2 (ja) |
JP (1) | JP6485766B2 (ja) |
KR (1) | KR102277075B1 (ja) |
CN (1) | CN104658928B (ja) |
CH (1) | CH708881B1 (ja) |
DE (1) | DE102014116147A1 (ja) |
FR (1) | FR3013432B1 (ja) |
HK (1) | HK1206866A1 (ja) |
MX (1) | MX2014014057A (ja) |
MY (1) | MY180095A (ja) |
SG (1) | SG10201406466VA (ja) |
TW (1) | TWI634614B (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
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US20160365317A1 (en) * | 2015-06-14 | 2016-12-15 | Tel Nexx, Inc. | Method and apparatus for forming emi shielding layers on semiconductor packages |
CH711296B1 (de) * | 2015-07-07 | 2019-03-15 | Besi Switzerland Ag | Durchlaufofen und Die-Bonder mit einem Durchlaufofen. |
CN110231006B (zh) * | 2019-06-10 | 2020-07-17 | 苏州博昇科技有限公司 | 空气耦合超声干涉法 |
DE102020119877A1 (de) * | 2020-07-28 | 2022-02-03 | Siegfried Hofmann Gmbh | Vorrichtung zur Verlagerung wenigstens einer Baugruppe zwischen einem Bereitstellungsbereich und einem Arbeitsbereich |
CN115172231B (zh) * | 2022-09-08 | 2022-11-25 | 西北电子装备技术研究所(中国电子科技集团公司第二研究所) | 一种带有气氛保护的快速升降温共晶加热台 |
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-
2013
- 2013-11-20 CH CH01938/13A patent/CH708881B1/de not_active IP Right Cessation
-
2014
- 2014-10-09 SG SG10201406466VA patent/SG10201406466VA/en unknown
- 2014-10-16 MY MYPI2014703087A patent/MY180095A/en unknown
- 2014-10-23 FR FR1460180A patent/FR3013432B1/fr active Active
- 2014-11-05 KR KR1020140152839A patent/KR102277075B1/ko active IP Right Grant
- 2014-11-06 DE DE102014116147.5A patent/DE102014116147A1/de active Granted
- 2014-11-11 JP JP2014228580A patent/JP6485766B2/ja active Active
- 2014-11-12 TW TW103139199A patent/TWI634614B/zh active
- 2014-11-19 MX MX2014014057A patent/MX2014014057A/es active IP Right Grant
- 2014-11-20 CN CN201410669842.6A patent/CN104658928B/zh active Active
- 2014-11-20 US US14/549,327 patent/US9666460B2/en active Active
-
2015
- 2015-07-31 HK HK15107361.9A patent/HK1206866A1/xx unknown
Also Published As
Publication number | Publication date |
---|---|
MY180095A (en) | 2020-11-21 |
FR3013432A1 (fr) | 2015-05-22 |
US9666460B2 (en) | 2017-05-30 |
FR3013432B1 (fr) | 2018-02-02 |
HK1206866A1 (en) | 2016-01-15 |
US20150136836A1 (en) | 2015-05-21 |
CN104658928A (zh) | 2015-05-27 |
DE102014116147A1 (de) | 2015-05-21 |
CN104658928B (zh) | 2018-11-30 |
MX2014014057A (es) | 2015-05-28 |
TWI634614B (zh) | 2018-09-01 |
TW201521144A (zh) | 2015-06-01 |
CH708881B1 (de) | 2017-06-15 |
KR20150057981A (ko) | 2015-05-28 |
JP2015103803A (ja) | 2015-06-04 |
SG10201406466VA (en) | 2015-06-29 |
KR102277075B1 (ko) | 2021-07-14 |
CH708881A1 (de) | 2015-05-29 |
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