JP6481772B2 - 方向性電磁鋼板の製造方法 - Google Patents
方向性電磁鋼板の製造方法 Download PDFInfo
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- JP6481772B2 JP6481772B2 JP2017554155A JP2017554155A JP6481772B2 JP 6481772 B2 JP6481772 B2 JP 6481772B2 JP 2017554155 A JP2017554155 A JP 2017554155A JP 2017554155 A JP2017554155 A JP 2017554155A JP 6481772 B2 JP6481772 B2 JP 6481772B2
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- steel sheet
- less
- grain
- annealing
- oriented electrical
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- 238000004519 manufacturing process Methods 0.000 title claims description 31
- 229910001224 Grain-oriented electrical steel Inorganic materials 0.000 title claims description 30
- 238000000137 annealing Methods 0.000 claims description 93
- 238000001953 recrystallisation Methods 0.000 claims description 71
- 229910000831 Steel Inorganic materials 0.000 claims description 40
- 239000010959 steel Substances 0.000 claims description 40
- 238000000034 method Methods 0.000 claims description 35
- 238000011282 treatment Methods 0.000 claims description 20
- 230000005381 magnetic domain Effects 0.000 claims description 17
- 230000008569 process Effects 0.000 claims description 16
- 239000010960 cold rolled steel Substances 0.000 claims description 15
- 238000005097 cold rolling Methods 0.000 claims description 11
- 238000005098 hot rolling Methods 0.000 claims description 11
- 239000000203 mixture Substances 0.000 claims description 7
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 claims description 5
- 238000010894 electron beam technology Methods 0.000 claims description 5
- 150000003346 selenoethers Chemical class 0.000 claims description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 4
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 3
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims description 3
- 230000003796 beauty Effects 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 description 32
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 27
- 239000011669 selenium Substances 0.000 description 27
- 230000004907 flux Effects 0.000 description 20
- 238000005121 nitriding Methods 0.000 description 17
- 230000000694 effects Effects 0.000 description 16
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- 239000000047 product Substances 0.000 description 14
- 238000002791 soaking Methods 0.000 description 14
- 229910052742 iron Inorganic materials 0.000 description 12
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 11
- 229910052787 antimony Inorganic materials 0.000 description 11
- 239000000463 material Substances 0.000 description 11
- 229910052717 sulfur Inorganic materials 0.000 description 11
- 229910052718 tin Inorganic materials 0.000 description 10
- 239000002244 precipitate Substances 0.000 description 9
- 238000005096 rolling process Methods 0.000 description 9
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- 238000005204 segregation Methods 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 230000009467 reduction Effects 0.000 description 6
- 238000005261 decarburization Methods 0.000 description 5
- 239000000395 magnesium oxide Substances 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 230000001629 suppression Effects 0.000 description 4
- 229910019142 PO4 Inorganic materials 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910052797 bismuth Inorganic materials 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 238000004090 dissolution Methods 0.000 description 3
- 238000013467 fragmentation Methods 0.000 description 3
- 238000006062 fragmentation reaction Methods 0.000 description 3
- 230000005764 inhibitory process Effects 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 229910052758 niobium Inorganic materials 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 3
- 239000010452 phosphate Substances 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 238000000746 purification Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000006104 solid solution Substances 0.000 description 3
- 238000005728 strengthening Methods 0.000 description 3
- 150000004763 sulfides Chemical class 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- 229910052714 tellurium Inorganic materials 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910052720 vanadium Inorganic materials 0.000 description 3
- 229910000976 Electrical steel Inorganic materials 0.000 description 2
- 230000032683 aging Effects 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000002401 inhibitory effect Effects 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- QYHFIVBSNOWOCQ-UHFFFAOYSA-N selenic acid Chemical class O[Se](O)(=O)=O QYHFIVBSNOWOCQ-UHFFFAOYSA-N 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- -1 MnSe Substances 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910001566 austenite Inorganic materials 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000011162 core material Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000006902 nitrogenation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000754 repressing effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 230000009291 secondary effect Effects 0.000 description 1
- 238000009628 steelmaking Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C21—METALLURGY OF IRON
- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
- C21D8/00—Modifying the physical properties by deformation combined with, or followed by, heat treatment
- C21D8/12—Modifying the physical properties by deformation combined with, or followed by, heat treatment during manufacturing of articles with special electromagnetic properties
- C21D8/1244—Modifying the physical properties by deformation combined with, or followed by, heat treatment during manufacturing of articles with special electromagnetic properties the heat treatment(s) being of interest
- C21D8/1272—Final recrystallisation annealing
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K15/00—Electron-beam welding or cutting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
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- C—CHEMISTRY; METALLURGY
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- C21D10/00—Modifying the physical properties by methods other than heat treatment or deformation
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- C—CHEMISTRY; METALLURGY
- C21—METALLURGY OF IRON
- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
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- C21D6/008—Heat treatment of ferrous alloys containing Si
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- C—CHEMISTRY; METALLURGY
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- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
- C21D8/00—Modifying the physical properties by deformation combined with, or followed by, heat treatment
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- C—CHEMISTRY; METALLURGY
- C21—METALLURGY OF IRON
- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
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- C21D8/12—Modifying the physical properties by deformation combined with, or followed by, heat treatment during manufacturing of articles with special electromagnetic properties
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- C—CHEMISTRY; METALLURGY
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- C21D8/1261—Modifying the physical properties by deformation combined with, or followed by, heat treatment during manufacturing of articles with special electromagnetic properties the heat treatment(s) being of interest following hot rolling
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- C21D8/1288—Application of a tension-inducing coating
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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Description
その結果、sol.Al、S、Se、SnおよびSbの成分元素について、従来認知されているインヒビターとして機能させるための含有量に満たない、微小量域において、これらの各成分の含有量を相互に規制することによって、1300℃以下の低温域のスラブ加熱であっても正常粒成長の抑制力が得られることを新規に知見するに至った。
1.質量%で、
C:0.002%以上0.080%以下、
Si:2.00%以上8.00%以下、
Mn:0.02%以上0.50%以下、
酸可溶性Alを0.003%以上0.010%未満、
Sおよび/またはSeを合計で0.005%以上0.010%以下並びに
Snおよび/またはSbを合計で0.005%以上1.0%以下
含有し、Nを0.006%未満に抑制し、残部はFeおよび不可避的不純物からなる成分組成を有する鋼スラブを1300℃以下で加熱し、
該鋼スラブに熱間圧延を施して熱延鋼板とし、
該熱延鋼板に、1回または中間焼鈍を挟む2回以上の冷間圧延を施して最終板厚を有する冷延鋼板とし、
該冷延鋼板に一次再結晶焼鈍を施し、
該一次再結晶焼鈍後の前記冷延鋼板の表面に焼鈍分離剤を塗布してから二次再結晶焼鈍を施す方向性電磁鋼板の製造方法。
質量%で、
Ni:0.005%以上1.5%以下、
Cu:0.005%以上1.5%以下、
Cr:0.005%以上0.1%以下、
P:0.005%以上0.5%以下、
Mo:0.005%以上0.5%以下、
Ti:0.0005%以上0.1%以下、
Nb:0.0005%以上0.1%以下、
V:0.0005%以上0.1%以下、
B:0.0002%以上0.0025%以下、
Bi:0.005%以上0.1%以下、
Te:0.0005%以上0.01%以下および
Ta:0.0005%以上0.01%以下
のうちから選ばれる1種または2種以上を含有する、上記1または2に記載の方向性電磁鋼板の製造方法。
以下、本発明の一実施形態による方向性電磁鋼板の製造方法について説明する。まず、鋼の成分組成の限定理由について述べる。なお、本明細書において、各成分元素の含有量を表す「%」は、特に断らない限り「質量%」を意味する。
Cは、0.002%に満たないと、Cによる粒界強化効果が失われ、スラブに割れが生じるなど、製造に支障を来たす欠陥を生ずるようになる。一方、0.080%を超えると、脱炭焼鈍で、磁気時効の起こらない0.005%以下に低減することが困難となる。よって、Cは0.002%以上0.080%以下の範囲とするのが好ましい。
Siは、鋼の電気抵抗を増大させ、鉄損の一部を構成する渦電流損を低減するのに極めて有効な元素である。鋼板に、Siを添加していった場合、含有量が11%までは、電気抵抗が単調に増加するものの、含有量が8.00%を超えたところで、加工性が著しく低下する。一方、含有量が2.00%未満では、電気抵抗が小さくなり良好な鉄損特性を得ることができない。そのため、Si量は2.00%以上8.00%以下とした。より好ましくは2.50%以上4.50%以下である。
Mnは、SやSeと結合してMnSやMnSeを形成し、これらのMnSやMnSeが微量であっても粒界偏析元素との併用によって、二次再結晶焼鈍の昇温過程において正常粒成長を抑制するように作用する。しかしながら、Mn量が0.02%に満たないと、この作用が、正常粒成長の抑制力不足となる。一方、Mn量が0.50%を超えると、熱延前のスラブ加熱過程において、Mnを完全固溶させるためには高温でのスラブ加熱が必要となるだけでなく、MnSやMnSeが粗大析出してしまうために、正常粒成長の抑制力が低下する。そのため、Mn量は0.02%以上0.50%以下とした。
SおよびSeは、本発明の特徴の一つである。SおよびSeは、上述の通り、Mnと結合して正常粒成長の抑制作用を発現するが、Sおよび/またはSeの合計含有量が0.005%未満では、正常粒成長の抑制力不足となるので、Sおよび/またはSeは合計含有量で0.005%以上含有させることが好ましい。一方、合計含有量が0.010%を超えると、本発明の特徴である1300℃以下の低温スラブ加熱過程においてMnSやMnSeが完全固溶できず、正常粒成長の抑制力不足となる。そのため、Sおよび/またはSeは、合計含有量で0.005%以上0.010%以下とした。
Alは、表面に緻密な酸化膜を形成し、窒化の際にその窒化量の制御を困難にしたり、脱炭を阻害することもあるため、Alはsol.Al量で0.010%未満に抑制する。酸素親和力の高いAlは、製鋼で微量添加することにより鋼中の溶存酸素量を低減し、特性劣化につながる酸化物系介在物の低減などを見込める。この観点から、sol.Alを0.003%以上含有させることにより、磁気特性の劣化を抑制することができる。
Nもまた、SやSeと同様、過剰に存在すると、二次再結晶を困難にする。特にN量が0.006%以上になると、二次再結晶が生じ難くなり、磁気特性が劣化するので、Nは0.006%未満に抑制するものとした。
SnおよびSbは本発明の特徴の一つである。SnおよびSbは粒界偏析元素であり、これらの元素を含有させることで、正常粒成長の抑制力が増加し、二次再結晶の駆動力が高まり、二次再結晶を安定化させることができる。Snおよび/またはSbの合計含有量が0.005%未満では、正常粒成長の抑制力効果が不十分であり、また、合計含有量が1.000%を超えると、正常粒成長の抑制力過多による二次再結晶が不安定になり磁気特性の劣化を招く。加えて、粒界脆化や圧延荷重増加による製造性も困難となる。そのため、Snおよび/またはSbは、合計含有量で0.005%以上1.000%以下とした。また、磁気特性バラツキ低減や製造性を考慮し、より好ましくは、0.020%以上0.300%以下とした。
Niは、オーステナイト生成元素であるため、オーステナイト変態を利用することで熱延板組織を改善し、磁気特性を向上させる上で有用な元素である。しかしながら、含有量が0.005%未満では、磁気特性の向上効果が小さく、一方含有量が1.5%超では、加工性が低下するため通板性が悪くなるほか、二次再結晶が不安定となり磁気特性が劣化するので、Niは0.005〜1.5%の範囲とした。
Cu、Cr、P、Mo、Ti、Nb、V、B、Bi、TeおよびTaはいずれも、磁気特性向上に有用な元素であるが、それぞれの含有量が上記範囲の下限値に満たないと、磁気特性の改善効果が乏しく、一方それぞれの含有量が上記範囲の上限値を超えると、二次再結晶が不安定になり磁気特性の劣化を招く。従って、Cuは0.005%以上1.5%以下、Crは0.005%以上0.1%以下、Pは0.005%以上0.5%以下、Moは0.005以上0.5%以下、Tiは0.0005以上0.1%以下、Nbは0.0005以上0.1%以下、Vは0.0005以上0.1%以下、Bは0.0002以上0.0025%以下、Biは0.005以上0.1%以下、Teは0.0005以上0.01%以下、Taは0.0005以上0.01%以下の範囲でそれぞれ含有させることができる。
[加熱]
上記の成分組成を有する鋼スラブに、スラブ加熱を行う。スラブ加熱温度は1300℃以下とする。1300℃超で加熱する場合、通常のガス加熱ではなく、誘導加熱等の特別な加熱炉を使用する必要があるため、コスト、生産性および歩留まり等の観点から不利となる。
その後、熱間圧延を行う。熱間圧延の条件は、例えば、圧下率は95%以上とし、熱延後の板厚は、1.5〜3.5mmとする。圧延終了温度は800℃以上が望ましい。熱延後の巻き取り温度は500〜700℃程度が望ましい。
熱間圧延後、必要であれば、熱延板焼鈍することで熱延板組織の改善を行う。この時の熱延板焼鈍は、均熱温度:800℃以上1200℃以下、均熱時間:2s以上300s以下の条件で行うことが好ましい。
熱延板焼鈍の均熱温度が800℃未満では、熱延板組織の改善が完全ではなく、未再結晶部が残存するため、所望の組織を得ることができないおそれがある。一方、均熱温度が1200℃超では、AlN、MnSeおよびMnSの溶解が進行し、二次再結晶過程でインヒビターの抑制力が不足して、二次再結晶しなくなる結果、磁気特性の劣化を引き起こすこととなる。従って、熱延板焼鈍の均熱温度は800℃以上1200℃以下とすることが好ましい。
次いで、熱間圧延後または熱延板焼鈍後に、鋼板を、中間焼鈍を挟む2回以上の冷間圧延によって最終板厚まで圧延する。この場合、中間焼鈍は、熱延板焼鈍と同じ思想で、均熱温度:800℃以上1200℃以下、均熱時間:2s以上300s以下とすることが好ましい。
上記の冷間圧延後、好ましくは均熱温度:700℃以上1000℃以下で一次再結晶焼鈍を施す。また、この一次再結晶焼鈍は、例えば湿水素雰囲気中で行えば、鋼板の脱炭も兼ねさせることができる。ここで、一次再結晶焼鈍における均熱温度が700℃未満では、未再結晶部が残存し、所望の組織を得ることができないおそれがある。一方、均熱温度が1000℃超では、ゴス方位粒の二次再結晶が起こってしまう可能性がある。従って、一次再結晶焼鈍における均熱温度は700℃以上1000℃以下とすることが好ましい。また、一次再結晶焼鈍に際しては、500〜700℃の温度域の平均昇温速度を50℃/s以上とすることが好ましい。
さらに、本発明では、一次再結晶焼鈍から二次再結晶焼鈍までのいずれかの段階で窒化処理を適用することができる。この窒化処理は、一次再結晶焼鈍後、アンモニア雰囲気中で熱処理を行うガス窒化や、塩浴中で熱処理を行う塩浴窒化、さらにはプラズマ窒化や、窒化物を焼鈍分離剤中に含有させたり、二次再結晶焼鈍雰囲気を窒化雰囲気とするなどの公知の技術が適用できる。
その後、必要であれば鋼板表面にMgOを主成分とする焼鈍分離剤を塗布したのち、二次再結晶焼鈍を行う。その際、焼鈍分離剤中に硫化物、硫酸塩、セレン化物およびセレン酸塩のうちから選んだ一種または二種以上を添加することができる。当該添加物は二次再結晶焼鈍中に分解したのち、鋼中に浸硫、浸セレンし、インヒビション効果をもたらす。二次再結晶焼鈍の焼鈍条件についても、特に制限はなく、従来公知の焼鈍条件で行えば良い。なお、この時の焼鈍雰囲気を水素雰囲気とすると、純化焼鈍も兼ねることができる。その後、絶縁被膜塗布工程および平坦化焼鈍工程を経て、所望の方向性電磁鋼板を得る。この時の絶縁被膜塗布工程および平坦化焼鈍工程の製造条件についても、特段の規定はなく、常法に従えば良い。
従って、このような鉄損低減という最終目標に対しての相反する事象を解決するために、磁区細分化処理を施すことが好ましい。適切な磁区細分化処理を施すことで、二次再結晶粒径粗大化により不利となっていた渦電流損が低減し、ヒステリシス損の低減と併せて、極めて低い鉄損特性を得ることができる。
表2に示す種々の成分組成からなる220mm厚の鋼スラブを、1250℃に加熱したのち、2.7mm厚まで熱間圧延した。ついで、1020℃で60sの熱延板焼鈍後、0.27mm厚まで冷間圧延してから、840℃で120sの一次再結晶焼鈍を施した。この一次再結晶焼鈍時における500〜700℃間の昇温速度は100℃/sとした。
かくして得られた製品の磁気特性について調べた結果を、表2に併記する。
表2中、No.13および、No.18の鋼スラブを、1230℃に加熱したのち、2.7mm厚まで熱間圧延した。ついで、1000℃で60sの熱延板焼鈍後、1回目の冷間圧延により2.0mmの中間厚まで圧延した。ついで、1040℃で60sの中間焼鈍後、2回目の冷間圧延により0.23mm厚まで冷間圧延してから、820℃で120sの一次再結晶焼鈍を施した。この一次再結晶焼鈍時における500〜700℃間の昇温速度は150℃/sとした。ついで、表3に示す条件で窒化処理および焼鈍分離剤中への硫酸塩添加の検討を行った。窒素化処理は、一次再結晶焼鈍板についてアンモニアを含有するガス雰囲気中で750℃で30sおよび950℃で30sのガス窒化処理を施した。窒化処理後の鋼板の窒素量を表3に示す。焼鈍分離剤中への硫酸塩添加は、鋼板表面にMgOおよびMgO:100質量部に対して10質量部のMgSO4を添加した焼鈍分離剤を塗布した。その後、それぞれの鋼板を1180℃で50時間の純化焼鈍を兼ねた二次再結晶焼鈍を行い、引き続きリン酸塩系の絶縁張力コーティングの塗布、焼付けと鋼帯の平坦化を目的とする平坦化焼鈍を施して製品板とした。
かくして得られた製品板の磁気特性について調べた結果を、表3に併記する。
表3に示したNo.13-b、13-c、18-bおよび18-cのサンプルについて、表4に示す磁区細分化処理の効果を確認する実験を行った。エッチングは、冷延鋼板の片面について、幅:80μm、深さ:15μm、圧延方向間隔:5mmの溝を圧延直角方向に形成した。電子ビームは、平坦化焼鈍後の鋼板の片面について、加速電圧:80kV、照射間隔:5mm、ビーム電流:3mAの条件で圧延直角方向に連続照射した。連続レーザーは、平坦化焼鈍後の鋼板の片面について、ビーム径:0.3mm、出力:200W、走査速度:100m/s、照射間隔:5mmの条件で圧延直角方向に連続照射した。
かくして得られた製品の磁気特性について調べた結果を、表4に併記する。
Claims (7)
- 質量%で、
C:0.002%以上0.080%以下、
Si:2.00%以上8.00%以下、
Mn:0.02%以上0.50%以下、
酸可溶性Alを0.003%以上0.010%未満、
Sおよび/またはSeを合計で0.006%以上0.010%以下並びに
Snおよび/またはSbを合計で0.020%以上0.300%以下(0.03%除く)含有し、Nを0.006%未満に抑制し、残部はFeおよび不可避的不純物からなる成分組成を有する鋼スラブを1300℃以下で加熱し、
該鋼スラブに熱間圧延を施して熱延鋼板とし、
該熱延鋼板に、1回または中間焼鈍を挟む2回以上の冷間圧延を施して最終板厚を有する冷延鋼板とし、
該冷延鋼板に湿水素雰囲気中で一次再結晶焼鈍を施し、
該一次再結晶焼鈍後の前記冷延鋼板の表面に焼鈍分離剤を塗布してから二次再結晶焼鈍を施すことを特徴とする方向性電磁鋼板の製造方法。 - 前記成分組成は、さらに、
質量%で、
Ni:0.005%以上1.5%以下、
Cu:0.005%以上1.5%以下、
Cr:0.005%以上0.1%以下、
P:0.005%以上0.5%以下、
Mo:0.005%以上0.5%以下、
Ti:0.0005%以上0.1%以下、
Nb:0.0005%以上0.1%以下、
V:0.0005%以上0.1%以下、
B:0.0002%以上0.0025%以下、
Bi:0.005%以上0.1%以下、
Te:0.0005%以上0.01%以下および
Ta:0.0005%以上0.01%以下
のうちから選ばれる1種または2種以上を含有することを特徴とする、請求項1に記載の方向性電磁鋼板の製造方法。 - 前記冷延鋼板に窒化処理を施す請求項1または2に記載の方向性電磁鋼板の製造方法。
- 前記焼鈍分離剤に、硫化物、硫酸塩、セレン化物、およびセレン酸塩の1種または2種以上が添加されている請求項1〜3のいずれか1項に記載の方向性電磁鋼板の製造方法。
- 前記冷延鋼板に磁区細分化処理を施す請求項1〜4のいずれか1項に記載の方向性電磁鋼板の製造方法。
- 前記磁区細分化処理が、前記二次再結晶焼鈍後の前記冷延鋼板への電子ビーム照射によるものである、請求項5に記載の方向性電磁鋼板の製造方法。
- 前記磁区細分化処理が、前記二次再結晶焼鈍後の前記冷延鋼板へのレーザー照射によるものである、請求項5に記載の方向性電磁鋼板の製造方法。
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