JP6479164B2 - 二次元層状材料の量子井戸接合デバイス、多重量子井戸デバイス及び量子井戸デバイスの製造方法 - Google Patents
二次元層状材料の量子井戸接合デバイス、多重量子井戸デバイス及び量子井戸デバイスの製造方法 Download PDFInfo
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- 239000000463 material Substances 0.000 title claims description 107
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000003530 quantum well junction Substances 0.000 title description 2
- 238000005411 Van der Waals force Methods 0.000 claims description 19
- 238000000151 deposition Methods 0.000 claims description 14
- 238000005229 chemical vapour deposition Methods 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 10
- 238000000231 atomic layer deposition Methods 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- 239000010410 layer Substances 0.000 description 119
- 239000000126 substance Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 7
- 229910052982 molybdenum disulfide Inorganic materials 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229910052582 BN Inorganic materials 0.000 description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 1
- CXRFFSKFQFGBOT-UHFFFAOYSA-N bis(selanylidene)niobium Chemical compound [Se]=[Nb]=[Se] CXRFFSKFQFGBOT-UHFFFAOYSA-N 0.000 description 1
- ROUIDRHELGULJS-UHFFFAOYSA-N bis(selanylidene)tungsten Chemical compound [Se]=[W]=[Se] ROUIDRHELGULJS-UHFFFAOYSA-N 0.000 description 1
- VRSMQRZDMZDXAU-UHFFFAOYSA-N bis(sulfanylidene)niobium Chemical compound S=[Nb]=S VRSMQRZDMZDXAU-UHFFFAOYSA-N 0.000 description 1
- FBGGJHZVZAAUKJ-UHFFFAOYSA-N bismuth selenide Chemical compound [Se-2].[Se-2].[Se-2].[Bi+3].[Bi+3] FBGGJHZVZAAUKJ-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 150000004770 chalcogenides Chemical class 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000001808 coupling effect Effects 0.000 description 1
- ZZEMEJKDTZOXOI-UHFFFAOYSA-N digallium;selenium(2-) Chemical compound [Ga+3].[Ga+3].[Se-2].[Se-2].[Se-2] ZZEMEJKDTZOXOI-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- AKUCEXGLFUSJCD-UHFFFAOYSA-N indium(3+);selenium(2-) Chemical compound [Se-2].[Se-2].[Se-2].[In+3].[In+3] AKUCEXGLFUSJCD-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- MHWZQNGIEIYAQJ-UHFFFAOYSA-N molybdenum diselenide Chemical compound [Se]=[Mo]=[Se] MHWZQNGIEIYAQJ-UHFFFAOYSA-N 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920000307 polymer substrate Polymers 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910021428 silicene Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- WWNBZGLDODTKEM-UHFFFAOYSA-N sulfanylidenenickel Chemical compound [Ni]=S WWNBZGLDODTKEM-UHFFFAOYSA-N 0.000 description 1
- RCYJPSGNXVLIBO-UHFFFAOYSA-N sulfanylidenetitanium Chemical compound [S].[Ti] RCYJPSGNXVLIBO-UHFFFAOYSA-N 0.000 description 1
- FAWYJKSBSAKOFP-UHFFFAOYSA-N tantalum(iv) sulfide Chemical compound S=[Ta]=S FAWYJKSBSAKOFP-UHFFFAOYSA-N 0.000 description 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 1
- ITRNXVSDJBHYNJ-UHFFFAOYSA-N tungsten disulfide Chemical compound S=[W]=S ITRNXVSDJBHYNJ-UHFFFAOYSA-N 0.000 description 1
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Description
Claims (16)
- 第1二次元材料の第1層と、
第2二次元材料の第2層と、
前記第1層と前記第2層の間に配置される第3二次元材料の第3層と、を備え、
前記第1層、前記第2層及び前記第3層は、主にファンデルワールス力によって付着し、
前記第3層が、
印加バイアス電圧を受け、
前記印加バイアス電圧によって所定のエネルギー準位の光子を吸収し、
前記吸収された光子によって電流を発生させるように適合されていることを特徴とする量子井戸デバイス。 - 前記第2二次元材料は、p型半導体となるようドープされることを特徴とする請求項1に記載の量子井戸デバイス。
- 前記第3層は、前記第3二次元材料の複数の副層を備えており、前記複数の副層の各々は、主にファンデルワールス力によって付着していることを特徴とする請求項1又は請求項2に記載の量子井戸デバイス。
- 前記第3層のバンドギャップは、前記第1層及び前記第2層のバンドギャップよりも小さく、前記第3層の前記副層の数を変えることで調節可能であることを特徴とする請求項3に記載の量子井戸デバイス。
- 前記第3層は、
駆動電圧を受け、
前記駆動電圧によって前記第1層から前記第3層へ複数の電子を駆動し、
前記駆動電圧によって前記第2層から前記第3層へ複数のホールを駆動し、
前記複数の駆動された電子からの電子及び前記複数の駆動されたホールからのホールの再結合により複数の光子を生成するように適合されることを特徴とする請求項1から請求項4までのいずれか一項に記載の量子井戸デバイス。 - 前記第3層のバンドギャップは、前記第1層及び前記第2層のバンドギャップよりも小さく、前記第3層の前記副層の数を変えることで調節可能であることを特徴とする請求項5に記載の量子井戸デバイス。
- 請求項1から請求項6までのいずれか一項に記載の量子井戸デバイスを複数備えることを特徴とする多重量子井戸デバイス。
- 基板及び第1二次元材料の第1層が主にファンデルワールス力によって付着するように前記第1層を前記基板上に堆積する工程と、
前記第1層及び第2二次元材料の第2層が主にファンデルワールス力によって付着するように前記第2層を前記第1層上に堆積する工程と、
前記第2層及び第3二次元材料の第3層が主にファンデルワールス力によって付着するように前記第3層を前記第2層上に堆積する工程と、
前記第3層上に第1コンタクトを堆積する工程と、
前記第1層の一部を露出する工程と、
前記第1層上に第2コンタクトを堆積する工程と、を備えることを特徴とする量子井戸デバイスの製造方法。 - 前記第1層は、機械的剥離、化学蒸着又は原子層堆積のいずれかによって堆積されることを特徴とする請求項8に記載の量子井戸デバイスの製造方法。
- 前記第2層は、機械的剥離、化学蒸着又は原子層堆積のいずれかによって堆積されることを特徴とする請求項8又は請求項9に記載の量子井戸デバイスの製造方法。
- 前記第3層は、機械的剥離、化学蒸着又は原子層堆積のいずれかによって堆積されることを特徴とする請求項8から請求項10までのいずれか一項に記載の量子井戸デバイスの製造方法。
- 前記第1二次元材料は、n型半導体となるようドープされることを特徴とする請求項8から請求項11までのいずれか一項に記載の量子井戸デバイスの製造方法。
- 前記第2二次元材料は、p型半導体となるようドープされることを特徴とする請求項8から請求項12までのいずれか一項に記載の量子井戸デバイスの製造方法。
- 前記第3層を堆積する工程は、前記第3二次元材料の複数の副層を堆積する工程を含み、前記複数の副層の各々は主にファンデルワールス力によって付着することを特徴とする請求項8から請求項13までのいずれか一項に記載の量子井戸デバイスの製造方法。
- 前記第3層のバンドギャップは、前記第1層及び前記第2層のバンドギャップよりも小さいことを特徴とする請求項14に記載の量子井戸デバイスの製造方法。
- 前記第3層の前記副層の数を変えることで前記第3層のバンドギャップを調節する工程を更に備えることを特徴とする請求項14又は請求項15に記載の量子井戸デバイスの製造方法。
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