JP6478020B2 - 結晶成長用基板、結晶性積層構造体およびそれらの製造方法ならびにエピタキシャル成長方法 - Google Patents
結晶成長用基板、結晶性積層構造体およびそれらの製造方法ならびにエピタキシャル成長方法 Download PDFInfo
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- JP6478020B2 JP6478020B2 JP2014239391A JP2014239391A JP6478020B2 JP 6478020 B2 JP6478020 B2 JP 6478020B2 JP 2014239391 A JP2014239391 A JP 2014239391A JP 2014239391 A JP2014239391 A JP 2014239391A JP 6478020 B2 JP6478020 B2 JP 6478020B2
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- 239000010980 sapphire Substances 0.000 claims description 16
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- 229910052733 gallium Inorganic materials 0.000 claims description 9
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 5
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
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- BMYNFMYTOJXKLE-UHFFFAOYSA-N 3-azaniumyl-2-hydroxypropanoate Chemical compound NCC(O)C(O)=O BMYNFMYTOJXKLE-UHFFFAOYSA-N 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
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- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
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- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
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- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
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- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
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- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
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- 229910052741 iridium Inorganic materials 0.000 description 1
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| JP2014239391A JP6478020B2 (ja) | 2014-11-26 | 2014-11-26 | 結晶成長用基板、結晶性積層構造体およびそれらの製造方法ならびにエピタキシャル成長方法 |
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| JP2014239391A JP6478020B2 (ja) | 2014-11-26 | 2014-11-26 | 結晶成長用基板、結晶性積層構造体およびそれらの製造方法ならびにエピタキシャル成長方法 |
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| JP2016098166A JP2016098166A (ja) | 2016-05-30 |
| JP2016098166A5 JP2016098166A5 (enExample) | 2018-01-18 |
| JP6478020B2 true JP6478020B2 (ja) | 2019-03-06 |
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| JP2014239391A Active JP6478020B2 (ja) | 2014-11-26 | 2014-11-26 | 結晶成長用基板、結晶性積層構造体およびそれらの製造方法ならびにエピタキシャル成長方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10989609B2 (en) * | 2017-05-09 | 2021-04-27 | Flosfia Inc. | Thermistor film and method of depositing the same |
| CN109423694B (zh) | 2017-08-21 | 2022-09-09 | 株式会社Flosfia | 结晶膜、包括结晶膜的半导体装置以及制造结晶膜的方法 |
| JP7741487B2 (ja) * | 2018-06-26 | 2025-09-18 | 株式会社Flosfia | 結晶性酸化物膜 |
| CN112368429A (zh) | 2018-06-26 | 2021-02-12 | 株式会社Flosfia | 成膜方法及结晶性层叠结构体 |
| JP6618216B2 (ja) * | 2018-10-11 | 2019-12-11 | 国立研究開発法人物質・材料研究機構 | α−Ｇａ２Ｏ３単結晶、α−Ｇａ２Ｏ３の製造方法、および、それを用いた半導体素子 |
| JP2020087948A (ja) * | 2018-11-14 | 2020-06-04 | 株式会社Flosfia | サーミスタ膜、サーミスタ膜を有するサーミスタ素子およびその製造方法 |
| JP2020087947A (ja) * | 2018-11-14 | 2020-06-04 | 株式会社Flosfia | サーミスタ薄膜、サーミスタ薄膜を有するサーミスタ素子およびその製造方法 |
| JP2020087949A (ja) * | 2018-11-14 | 2020-06-04 | 株式会社Flosfia | サーミスタ膜、サーミスタ膜を有するサーミスタ素子およびその製造方法 |
| JP2020087951A (ja) * | 2018-11-14 | 2020-06-04 | 株式会社Flosfia | 積層構造体、積層構造体を有するサーミスタ素子およびその製造方法 |
| JP2020087950A (ja) * | 2018-11-14 | 2020-06-04 | 株式会社Flosfia | サーミスタ膜、サーミスタ膜を有するサーミスタ素子およびその製造方法 |
| JP2020087952A (ja) * | 2018-11-14 | 2020-06-04 | 株式会社Flosfia | サーミスタ膜の製造方法 |
| JP7315136B2 (ja) * | 2018-12-26 | 2023-07-26 | 株式会社Flosfia | 結晶性酸化物半導体 |
| JP7315137B2 (ja) | 2018-12-26 | 2023-07-26 | 株式会社Flosfia | 結晶性酸化物膜 |
| CN114270531A (zh) | 2019-09-03 | 2022-04-01 | 株式会社Flosfia | 结晶膜、包含结晶膜的半导体装置以及结晶膜的制造方法 |
| JP6842128B2 (ja) * | 2019-09-26 | 2021-03-17 | 国立研究開発法人物質・材料研究機構 | α−Ｇａ２Ｏ３単結晶の製造装置 |
| KR102849602B1 (ko) | 2019-09-30 | 2025-08-21 | 가부시키가이샤 플로스피아 | 적층 구조체 및 반도체 장치 |
| JP7453609B2 (ja) * | 2019-11-19 | 2024-03-21 | 株式会社Flosfia | 剥離方法および結晶性酸化物膜の製造方法 |
| TWI879858B (zh) * | 2020-01-10 | 2025-04-11 | 日商Ｆｌｏｓｆｉａ股份有限公司 | 半導體裝置及半導體系統 |
| TWI854083B (zh) * | 2020-01-10 | 2024-09-01 | 日商Ｆｌｏｓｆｉａ股份有限公司 | 半導體裝置 |
| WO2021153609A1 (ja) | 2020-01-27 | 2021-08-05 | 株式会社Flosfia | 半導体装置および半導体装置の製造方法 |
| US11694894B2 (en) | 2020-04-24 | 2023-07-04 | Flosfia Inc. | Crystalline film containing a crystalline metal oxide and method for manufacturing the same under partial pressure |
| US11804519B2 (en) | 2020-04-24 | 2023-10-31 | Flosfia Inc. | Crystalline multilayer structure, semiconductor device, and method of manufacturing crystalline structure |
| KR20240063901A (ko) | 2021-09-22 | 2024-05-10 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 성막방법, 성막장치 및 결정성 산화물막 |
| JPWO2023238587A1 (enExample) | 2022-06-08 | 2023-12-14 | ||
| US12402381B2 (en) | 2022-07-12 | 2025-08-26 | Flosfia, Inc. | Semiconductor device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP5353113B2 (ja) * | 2008-01-29 | 2013-11-27 | 豊田合成株式会社 | Ｉｉｉ族窒化物系化合物半導体の製造方法 |
| JP5295871B2 (ja) * | 2008-07-03 | 2013-09-18 | 古河機械金属株式会社 | Ｉｉｉ族窒化物半導体基板の製造方法 |
| JP5343224B1 (ja) * | 2012-09-28 | 2013-11-13 | Ｒｏｃａ株式会社 | 半導体装置および結晶 |
| JP2017135100A (ja) * | 2016-01-21 | 2017-08-03 | 日本碍子株式会社 | リチウムイオン電池 |
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