JP6474204B2 - マイクロメカニカルセンサ装置 - Google Patents
マイクロメカニカルセンサ装置 Download PDFInfo
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- JP6474204B2 JP6474204B2 JP2014101151A JP2014101151A JP6474204B2 JP 6474204 B2 JP6474204 B2 JP 6474204B2 JP 2014101151 A JP2014101151 A JP 2014101151A JP 2014101151 A JP2014101151 A JP 2014101151A JP 6474204 B2 JP6474204 B2 JP 6474204B2
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- Prior art keywords
- sensor device
- thin film
- ion conductive
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- electrode
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- 239000010409 thin film Substances 0.000 claims description 36
- 239000004020 conductor Substances 0.000 claims description 26
- 150000002500 ions Chemical class 0.000 claims description 25
- 239000000463 material Substances 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 6
- 229920000557 Nafion® Polymers 0.000 claims description 3
- DQBAOWPVHRWLJC-UHFFFAOYSA-N barium(2+);dioxido(oxo)zirconium Chemical compound [Ba+2].[O-][Zr]([O-])=O DQBAOWPVHRWLJC-UHFFFAOYSA-N 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000012528 membrane Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229920000642 polymer Polymers 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 28
- 238000000034 method Methods 0.000 description 11
- 239000001257 hydrogen Substances 0.000 description 10
- 229910052739 hydrogen Inorganic materials 0.000 description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 8
- 238000005259 measurement Methods 0.000 description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 229910052697 platinum Inorganic materials 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 239000006090 Foturan Substances 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000012806 monitoring device Methods 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- -1 oxygen ions Chemical class 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
- G01N27/4141—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for gases
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/406—Cells and probes with solid electrolytes
- G01N27/407—Cells and probes with solid electrolytes for investigating or analysing gases
- G01N27/4073—Composition or fabrication of the solid electrolyte
- G01N27/4074—Composition or fabrication of the solid electrolyte for detection of gases other than oxygen
Landscapes
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- Biochemistry (AREA)
- Pathology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Immunology (AREA)
- Analytical Chemistry (AREA)
- Molecular Biology (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
- Measuring Oxygen Concentration In Cells (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Description
・装置が微細化されるので、多くの目的に適合する;
・具体的な実施形態に応じて、多くの気体に対応可能な装置が得られる;
・装置の構造が単純であり、低コストに製造できる;
という利点のうち少なくとも1つが得られる。
・ポリマー群、有利にはナフィオン、及び/又は、
・セラミック群、有利にはイットリウム酸化物Y2O3、又は、
・ペロブスカイト、有利にはバリウムジルコニウム酸化物、乃至、アクセプタがドープされた酸化物/ペロブスカイト、例えばNd:BaCeO3もしくはY:SrZrO3もしくはY:SrCeO3もしくはこれらの材料の混合物
から選択された材料から形成される。
Claims (9)
- 気体の測定及び/又は検出を行うセンサ装置であって、
第1のマイクロメカニカル電極(E1)と、
第2のマイクロメカニカル電極(E2)と、
薄膜イオン伝導性材料(5)と
を含み、
前記薄膜イオン伝導性材料(5)は、負帯電イオンの伝導率に比べて高い正帯電イオンの伝導率を有しており、前記第1のマイクロメカニカル電極(E1)と前記第2のマイクロメカニカル電極(E2)との間に埋め込まれており、
前記第1のマイクロメカニカル電極及び前記第2のマイクロメカニカル電極(E1,E2)の一方もしくは双方は多孔性を有するように構成されており、
前記第1のマイクロメカニカル電極及び前記第2のマイクロメカニカル電極(E1,E2)の一方もしくは双方は、Pd,Au,Niもしくはこれらの混合物を含む群から選択された材料を含み、
前記薄膜イオン伝導性材料(5)は、少なくとも部分的に一方側もしくは両側がイオン伝導性薄膜層(50)でコーティングされており、前記イオン伝導性薄膜層(50)は、負帯電イオンの伝導率に比べて高い正帯電イオンの伝導率を有する、
ことを特徴とするセンサ装置。 - 前記薄膜イオン伝導性材料(5)は50nm以上1500nm以下の厚さを有する、請求項1記載のセンサ装置。
- 前記薄膜イオン伝導性材料(5)は、10−8S/cm以上の正帯電イオンの伝導率を有する、請求項1又は2記載のセンサ装置。
- 前記薄膜イオン伝導性材料(5)は、プロトン伝導率を有する、請求項3記載のセンサ装置。
- 前記薄膜イオン伝導性材料(5)は、
ポリマー群もしくはセラミック群もしくはペロブスカイトもしくはアクセプタドープされた酸化物/ペロブスカイトから選択された材料、
又は、
ポリマー群と、セラミック群もしくはペロブスカイトもしくはアクセプタドープされた酸化物/ペロブスカイトとを含む材料
を含む、
請求項1から4までのいずれか1項記載のセンサ装置。 - 前記薄膜イオン伝導性材料(5)は、
ナフィオンもしくはイットリウム酸化物(Y2O3)もしくはバリウムジルコニウム酸化物、又は、Nd:BaCeO3もしくはY:SrZrO3もしくはY:SrCeO3もしくはこれらの材料の混合物、から選択された材料、
又は、
ナフィオンと、イットリウム酸化物(Y2O3)もしくはバリウムジルコニウム酸化物、又は、Nd:BaCeO3もしくはY:SrZrO3もしくはY:SrCeO3もしくはこれらの材料の混合物とを含む材料
を含む、
請求項5記載のセンサ装置。 - 前記センサ装置はさらに多孔性領域を含むマイクロメカニカル支持体基板(1)を含み、前記多孔性領域の上方に前記第1のマイクロメカニカル電極及び前記第2のマイクロメカニカル電極(E1,E2)及び前記薄膜イオン伝導性材料(5)が配置されている、請求項1から6までのいずれか1項記載のセンサ装置。
- 前記イオン伝導性薄膜層(50)は1nm以上100nm以下の厚さを有する、請求項1から7までのいずれか1項記載のセンサ装置。
- 前記センサ装置はさらにメンブレイン領域(B)を定める開放口(K)を有し、前記第1のマイクロメカニカル電極及び前記第2のマイクロメカニカル電極(E1,E2)の一方(E2)は前記開放口(K)を通って延在している、請求項1から8までのいずれか1項記載のセンサ装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102013208939.2 | 2013-05-15 | ||
DE102013208939.2A DE102013208939A1 (de) | 2013-05-15 | 2013-05-15 | Mikromechanische Sensorvorrichtung |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014224819A JP2014224819A (ja) | 2014-12-04 |
JP6474204B2 true JP6474204B2 (ja) | 2019-02-27 |
Family
ID=51831331
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014101151A Expired - Fee Related JP6474204B2 (ja) | 2013-05-15 | 2014-05-15 | マイクロメカニカルセンサ装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9880125B2 (ja) |
JP (1) | JP6474204B2 (ja) |
CN (1) | CN104165917B (ja) |
DE (1) | DE102013208939A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102014224587A1 (de) | 2014-12-02 | 2016-06-02 | Robert Bosch Gmbh | Verfahren zum Herstellen einer Gassensorvorrichtung zum Erfassen zumindest eines gasförmigen Analyten und Gassensorvorrichtung zum Erfassen zumindest eines gasförmigen Analyten |
DE102014226795A1 (de) * | 2014-12-22 | 2016-06-23 | Robert Bosch Gmbh | Membran für einen mikroelektrochemischen Sensor und Verfahren zu ihrer Herstellung |
CN105021683B (zh) * | 2015-06-05 | 2017-09-15 | 东南大学 | 面向生物分子检测的二硫化钼场效应晶体管的制作方法 |
CN109211983B (zh) * | 2017-07-07 | 2021-03-23 | 台湾奈米碳素股份有限公司 | 利用微机电工艺制造气体检测器的方法 |
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DE2852647C2 (de) * | 1978-12-06 | 1986-04-30 | Robert Bosch Gmbh, 7000 Stuttgart | Verfahren zur Herstellung eines Schichtsystems auf Festelektrolyten für elektrochemische Anwendungen |
JP2502961B2 (ja) * | 1984-04-26 | 1996-05-29 | 日本碍子株式会社 | 電気化学的装置の製造方法 |
JP2859294B2 (ja) * | 1989-05-29 | 1999-02-17 | 株式会社東芝 | 酸素センサ |
JPH04232454A (ja) * | 1990-12-28 | 1992-08-20 | Yokogawa Electric Corp | 酸素センサ |
US5272871A (en) * | 1991-05-24 | 1993-12-28 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Method and apparatus for reducing nitrogen oxides from internal combustion engine |
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JP3498772B2 (ja) * | 1995-03-31 | 2004-02-16 | 株式会社豊田中央研究所 | 薄膜式ガスセンサ及びその製造方法 |
JPH0987510A (ja) * | 1995-09-22 | 1997-03-31 | Japan Synthetic Rubber Co Ltd | プロトン伝導性高分子固体電解質 |
KR100319947B1 (ko) * | 1998-04-06 | 2002-01-09 | 마츠시타 덴끼 산교 가부시키가이샤 | 탄화수소 센서 |
FR2783095B1 (fr) * | 1998-09-03 | 2002-07-19 | France Etat | Dispositif piezo-sensible, son procede de fabrication et sa mise en oeuvre |
DE19941051C2 (de) | 1999-08-28 | 2003-10-23 | Bosch Gmbh Robert | Sensorelement zur Bestimmung der Sauerstoffkonzentration in Gasgemischen und Verfahren zur Herstellung desselben |
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-
2013
- 2013-05-15 DE DE102013208939.2A patent/DE102013208939A1/de not_active Withdrawn
-
2014
- 2014-05-01 US US14/267,472 patent/US9880125B2/en not_active Expired - Fee Related
- 2014-05-14 CN CN201410202080.9A patent/CN104165917B/zh not_active Expired - Fee Related
- 2014-05-15 JP JP2014101151A patent/JP6474204B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN104165917A (zh) | 2014-11-26 |
US9880125B2 (en) | 2018-01-30 |
US20140339080A1 (en) | 2014-11-20 |
JP2014224819A (ja) | 2014-12-04 |
DE102013208939A1 (de) | 2014-11-20 |
CN104165917B (zh) | 2019-04-23 |
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