JP6469682B2 - 任意の長さのリボン状ビームイオン源 - Google Patents

任意の長さのリボン状ビームイオン源 Download PDF

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Publication number
JP6469682B2
JP6469682B2 JP2016533174A JP2016533174A JP6469682B2 JP 6469682 B2 JP6469682 B2 JP 6469682B2 JP 2016533174 A JP2016533174 A JP 2016533174A JP 2016533174 A JP2016533174 A JP 2016533174A JP 6469682 B2 JP6469682 B2 JP 6469682B2
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Prior art keywords
magnetic field
ion source
chamber
ion
arc discharge
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Japanese (ja)
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JP2017504148A5 (enExample
JP2017504148A (ja
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アール． ホワイト ニコラス
アール． ホワイト ニコラス
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/08—Ion sources; Ion guns using arc discharge
    • H01J27/14—Other arc discharge ion sources using an applied magnetic field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/061—Construction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0815—Methods of ionisation
    • H01J2237/082—Electron beam

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Combustion & Propulsion (AREA)
  • Electron Sources, Ion Sources (AREA)
JP2016533174A 2013-12-20 2014-11-26 任意の長さのリボン状ビームイオン源 Active JP6469682B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361964001P 2013-12-20 2013-12-20
US61/964,001 2013-12-20
PCT/US2014/000216 WO2015094381A1 (en) 2013-12-20 2014-11-26 A ribbon beam ion source of arbitrary length

Publications (3)

Publication Number Publication Date
JP2017504148A JP2017504148A (ja) 2017-02-02
JP2017504148A5 JP2017504148A5 (enExample) 2017-10-05
JP6469682B2 true JP6469682B2 (ja) 2019-02-13

Family

ID=53403458

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016533174A Active JP6469682B2 (ja) 2013-12-20 2014-11-26 任意の長さのリボン状ビームイオン源

Country Status (5)

Country Link
US (1) US9711318B2 (enExample)
EP (1) EP3084804B1 (enExample)
JP (1) JP6469682B2 (enExample)
TW (1) TWI648761B (enExample)
WO (1) WO2015094381A1 (enExample)

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US20180138007A1 (en) 2016-11-11 2018-05-17 Nissin Ion Equipment Co., Ltd. Ion Implanter
US11289355B2 (en) 2017-06-02 2022-03-29 Lam Research Corporation Electrostatic chuck for use in semiconductor processing
US11469084B2 (en) * 2017-09-05 2022-10-11 Lam Research Corporation High temperature RF connection with integral thermal choke
WO2019054111A1 (ja) * 2017-09-14 2019-03-21 株式会社アルバック イオン源及びイオン注入装置並びにイオン源の運転方法
KR102655866B1 (ko) 2018-01-31 2024-04-05 램 리써치 코포레이션 정전 척 (electrostatic chuck, ESC) 페데스탈 전압 분리
CN108377607B (zh) * 2018-03-07 2024-05-10 中国原子能科学研究院 一种用于离子源等离子体测试实验装置的电磁铁系统
US11086233B2 (en) 2018-03-20 2021-08-10 Lam Research Corporation Protective coating for electrostatic chucks
JP6396618B1 (ja) * 2018-04-03 2018-09-26 グローテクノロジー株式会社 グロー放電システム及びこれを用いたグロー放電質量分析装置
CN108682600B (zh) * 2018-07-16 2024-05-14 中国原子能科学研究院 一种带有防打火装置的离子源
US11183368B2 (en) 2018-08-02 2021-11-23 Lam Research Corporation RF tuning systems including tuning circuits having impedances for setting and adjusting parameters of electrodes in electrostatic chucks
WO2020081276A1 (en) * 2018-10-19 2020-04-23 Aceleron, Inc. Methods and systems for plasma self-compression
CN113707528B (zh) * 2020-05-22 2023-03-31 江苏鲁汶仪器股份有限公司 一种离子源挡片、离子刻蚀机及其使用方法
US11244800B2 (en) * 2020-06-18 2022-02-08 Axcelis Technologies, Inc. Stepped indirectly heated cathode with improved shielding
US12020896B2 (en) * 2020-07-31 2024-06-25 Taiwan Semiconductor Manufacturing Company, Ltd. Insulator for an ion implantation source
JP7347680B2 (ja) * 2020-08-20 2023-09-20 株式会社島津製作所 質量分析装置
CN112233954B (zh) * 2020-09-01 2024-07-23 中国电子科技集团公司第十二研究所 一种磁钢片、磁聚焦系统及包括其的行波管
CN112652509B (zh) * 2020-12-31 2025-01-07 南京大学 一种用于65KeV双等离子体离子源质子引出的引出电极
US20220359157A1 (en) * 2021-05-05 2022-11-10 Malachite Technologies, Inc. System and process implementing a wide ribbon beam ion source to implant ions in material to modify material properties
CN113202707B (zh) * 2021-05-12 2022-08-02 兰州空间技术物理研究所 一种可变直径离子推力器磁极
US12154753B2 (en) 2021-09-13 2024-11-26 Applied Materials, Inc. Device to control uniformity of extracted ion beam
CA3232793A1 (en) 2021-10-01 2023-04-06 Sarko Cherekdjian Ion production system with fibrous lattice for ion collection
JP2025512910A (ja) * 2022-04-01 2025-04-22 ボード オブ リージェンツ，ザ ユニバーシティ オブ テキサス システム 改善された磁気融合装置における閉じ込めのための技術
JP7787497B2 (ja) * 2022-07-20 2025-12-17 日新イオン機器株式会社 イオン源
US12431330B2 (en) 2022-09-30 2025-09-30 Applied Materials, Inc. Helical voltage standoff
US12469666B2 (en) * 2022-11-29 2025-11-11 Applied Materials, Inc. Lattice based voltage standoff
CN117894653A (zh) * 2022-12-19 2024-04-16 广东省新兴激光等离子体技术研究院 引出带状离子束的离子源
CN116347743B (zh) * 2023-02-06 2023-11-10 散裂中子源科学中心 一种用于引出极弱粒子束的散射器
US20250054647A1 (en) * 2023-08-10 2025-02-13 Alpha Ring International, Ltd. Electron Suppressor Electrode for Improved Efficiency and In-Situ Electron Monitoring

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US5262652A (en) 1991-05-14 1993-11-16 Applied Materials, Inc. Ion implantation apparatus having increased source lifetime
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US5497006A (en) 1994-11-15 1996-03-05 Eaton Corporation Ion generating source for use in an ion implanter
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Also Published As

Publication number Publication date
WO2015094381A1 (en) 2015-06-25
EP3084804A1 (en) 2016-10-26
EP3084804B1 (en) 2018-03-14
EP3084804A4 (en) 2017-06-07
TWI648761B (zh) 2019-01-21
US9711318B2 (en) 2017-07-18
JP2017504148A (ja) 2017-02-02
TW201535453A (zh) 2015-09-16
US20170110282A1 (en) 2017-04-20

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