JP2017504148A5 - - Google Patents
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- Publication number
- JP2017504148A5 JP2017504148A5 JP2016533174A JP2016533174A JP2017504148A5 JP 2017504148 A5 JP2017504148 A5 JP 2017504148A5 JP 2016533174 A JP2016533174 A JP 2016533174A JP 2016533174 A JP2016533174 A JP 2016533174A JP 2017504148 A5 JP2017504148 A5 JP 2017504148A5
- Authority
- JP
- Japan
- Prior art keywords
- ion source
- source assembly
- magnetic field
- arc discharge
- discharge chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 150000002500 ions Chemical class 0.000 claims 21
- 230000005291 magnetic effect Effects 0.000 claims 16
- 238000010891 electric arc Methods 0.000 claims 13
- 239000007787 solid Substances 0.000 claims 9
- 238000000605 extraction Methods 0.000 claims 6
- 230000005294 ferromagnetic effect Effects 0.000 claims 6
- 230000004888 barrier function Effects 0.000 claims 5
- 230000005405 multipole Effects 0.000 claims 5
- 239000003302 ferromagnetic material Substances 0.000 claims 4
- 238000010884 ion-beam technique Methods 0.000 claims 4
- 230000005264 electron capture Effects 0.000 claims 3
- 230000004907 flux Effects 0.000 claims 3
- 238000005192 partition Methods 0.000 claims 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 3
- 239000012212 insulator Substances 0.000 claims 2
- 239000000126 substance Substances 0.000 claims 2
- 229910052721 tungsten Inorganic materials 0.000 claims 2
- 239000010937 tungsten Substances 0.000 claims 2
- 238000001816 cooling Methods 0.000 claims 1
- 239000000696 magnetic material Substances 0.000 claims 1
- 238000005259 measurement Methods 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 230000001105 regulatory effect Effects 0.000 claims 1
- 238000000638 solvent extraction Methods 0.000 claims 1
- 239000003643 water by type Substances 0.000 claims 1
- 238000004804 winding Methods 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361964001P | 2013-12-20 | 2013-12-20 | |
| US61/964,001 | 2013-12-20 | ||
| PCT/US2014/000216 WO2015094381A1 (en) | 2013-12-20 | 2014-11-26 | A ribbon beam ion source of arbitrary length |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017504148A JP2017504148A (ja) | 2017-02-02 |
| JP2017504148A5 true JP2017504148A5 (enExample) | 2017-10-05 |
| JP6469682B2 JP6469682B2 (ja) | 2019-02-13 |
Family
ID=53403458
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016533174A Active JP6469682B2 (ja) | 2013-12-20 | 2014-11-26 | 任意の長さのリボン状ビームイオン源 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9711318B2 (enExample) |
| EP (1) | EP3084804B1 (enExample) |
| JP (1) | JP6469682B2 (enExample) |
| TW (1) | TWI648761B (enExample) |
| WO (1) | WO2015094381A1 (enExample) |
Families Citing this family (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9859098B2 (en) | 2015-12-22 | 2018-01-02 | Varian Semiconductor Equipment Associates, Inc. | Temperature controlled ion source |
| US9870891B1 (en) * | 2016-02-24 | 2018-01-16 | Euclid Techlabs LLC | High gradient permanent magnet elements for charged particle beamlines |
| CN107305829B (zh) * | 2016-04-20 | 2019-09-06 | 中微半导体设备(上海)股份有限公司 | 等离子体处理装置、热电子发生器、等离子体点燃装置及方法 |
| CN109690724A (zh) | 2016-11-11 | 2019-04-26 | 日新离子机器株式会社 | 离子源 |
| US11289355B2 (en) | 2017-06-02 | 2022-03-29 | Lam Research Corporation | Electrostatic chuck for use in semiconductor processing |
| US11469084B2 (en) | 2017-09-05 | 2022-10-11 | Lam Research Corporation | High temperature RF connection with integral thermal choke |
| KR102365700B1 (ko) * | 2017-09-14 | 2022-02-23 | 울박, 인크 | 이온원과 이온 주입 장치 및 이온원의 운전 방법 |
| WO2019152528A1 (en) | 2018-01-31 | 2019-08-08 | Lam Research Corporation | Electrostatic chuck (esc) pedestal voltage isolation |
| CN108377607B (zh) * | 2018-03-07 | 2024-05-10 | 中国原子能科学研究院 | 一种用于离子源等离子体测试实验装置的电磁铁系统 |
| US11086233B2 (en) | 2018-03-20 | 2021-08-10 | Lam Research Corporation | Protective coating for electrostatic chucks |
| JP6396618B1 (ja) * | 2018-04-03 | 2018-09-26 | グローテクノロジー株式会社 | グロー放電システム及びこれを用いたグロー放電質量分析装置 |
| CN108682600B (zh) * | 2018-07-16 | 2024-05-14 | 中国原子能科学研究院 | 一种带有防打火装置的离子源 |
| US11183368B2 (en) | 2018-08-02 | 2021-11-23 | Lam Research Corporation | RF tuning systems including tuning circuits having impedances for setting and adjusting parameters of electrodes in electrostatic chucks |
| WO2020081276A1 (en) * | 2018-10-19 | 2020-04-23 | Aceleron, Inc. | Methods and systems for plasma self-compression |
| CN113707528B (zh) * | 2020-05-22 | 2023-03-31 | 江苏鲁汶仪器股份有限公司 | 一种离子源挡片、离子刻蚀机及其使用方法 |
| US11244800B2 (en) * | 2020-06-18 | 2022-02-08 | Axcelis Technologies, Inc. | Stepped indirectly heated cathode with improved shielding |
| US12020896B2 (en) * | 2020-07-31 | 2024-06-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Insulator for an ion implantation source |
| US20230245878A1 (en) * | 2020-08-20 | 2023-08-03 | Shimadzu Corporation | Mass spectrometer |
| CN112233954B (zh) * | 2020-09-01 | 2024-07-23 | 中国电子科技集团公司第十二研究所 | 一种磁钢片、磁聚焦系统及包括其的行波管 |
| CN112652509B (zh) * | 2020-12-31 | 2025-01-07 | 南京大学 | 一种用于65KeV双等离子体离子源质子引出的引出电极 |
| US20220359157A1 (en) * | 2021-05-05 | 2022-11-10 | Malachite Technologies, Inc. | System and process implementing a wide ribbon beam ion source to implant ions in material to modify material properties |
| CN113202707B (zh) * | 2021-05-12 | 2022-08-02 | 兰州空间技术物理研究所 | 一种可变直径离子推力器磁极 |
| US12154753B2 (en) * | 2021-09-13 | 2024-11-26 | Applied Materials, Inc. | Device to control uniformity of extracted ion beam |
| IL311741A (en) | 2021-10-01 | 2024-05-01 | Shine Technologies Llc | Ion production system with fibrous lattice for ion collection |
| JP2025512910A (ja) * | 2022-04-01 | 2025-04-22 | ボード オブ リージェンツ，ザ ユニバーシティ オブ テキサス システム | 改善された磁気融合装置における閉じ込めのための技術 |
| JP7787497B2 (ja) * | 2022-07-20 | 2025-12-17 | 日新イオン機器株式会社 | イオン源 |
| US12431330B2 (en) | 2022-09-30 | 2025-09-30 | Applied Materials, Inc. | Helical voltage standoff |
| US12469666B2 (en) | 2022-11-29 | 2025-11-11 | Applied Materials, Inc. | Lattice based voltage standoff |
| CN115665962B (zh) * | 2022-12-19 | 2024-01-23 | 广东省新兴激光等离子体技术研究院 | 引出带状离子束的离子源 |
| CN116347743B (zh) * | 2023-02-06 | 2023-11-10 | 散裂中子源科学中心 | 一种用于引出极弱粒子束的散射器 |
| US20250054647A1 (en) * | 2023-08-10 | 2025-02-13 | Alpha Ring International, Ltd. | Electron Suppressor Electrode for Improved Efficiency and In-Situ Electron Monitoring |
Family Cites Families (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3238414A (en) | 1965-07-28 | 1966-03-01 | George G Kelley | High output duoplasmatron-type ion source |
| US3924134A (en) | 1974-11-29 | 1975-12-02 | Ibm | Double chamber ion source |
| US4383177A (en) * | 1980-12-24 | 1983-05-10 | International Business Machines Corporation | Multipole implantation-isotope separation ion beam source |
| US4714834A (en) | 1984-05-09 | 1987-12-22 | Atomic Energy Of Canada, Limited | Method and apparatus for generating ion beams |
| JPS6298542A (ja) * | 1985-10-25 | 1987-05-08 | Hitachi Ltd | イオン源 |
| US5262652A (en) | 1991-05-14 | 1993-11-16 | Applied Materials, Inc. | Ion implantation apparatus having increased source lifetime |
| JPH065217A (ja) * | 1992-06-19 | 1994-01-14 | Ulvac Japan Ltd | シートプラズマイオン源装置 |
| JPH0765764A (ja) * | 1993-08-28 | 1995-03-10 | Ulvac Japan Ltd | シートイオンビーム装置 |
| US5497006A (en) | 1994-11-15 | 1996-03-05 | Eaton Corporation | Ion generating source for use in an ion implanter |
| JP3550831B2 (ja) * | 1995-10-12 | 2004-08-04 | 日新電機株式会社 | 粒子線照射装置 |
| US5703372A (en) | 1996-10-30 | 1997-12-30 | Eaton Corporation | Endcap for indirectly heated cathode of ion source |
| US5763890A (en) | 1996-10-30 | 1998-06-09 | Eaton Corporation | Cathode mounting for ion source with indirectly heated cathode |
| JP3449198B2 (ja) | 1997-10-22 | 2003-09-22 | 日新電機株式会社 | イオン注入装置 |
| US6271529B1 (en) * | 1997-12-01 | 2001-08-07 | Ebara Corporation | Ion implantation with charge neutralization |
| US6184532B1 (en) * | 1997-12-01 | 2001-02-06 | Ebara Corporation | Ion source |
| US6259210B1 (en) | 1998-07-14 | 2001-07-10 | Applied Materials, Inc. | Power control apparatus for an ION source having an indirectly heated cathode |
| JP4249826B2 (ja) * | 1998-12-02 | 2009-04-08 | 株式会社 Ｓｅｎ−Ｓｈｉ・アクセリス カンパニー | Ｅｃｒ用多極永久磁石装置 |
| JP2001202896A (ja) * | 2000-01-17 | 2001-07-27 | Nissin Electric Co Ltd | イオン源 |
| US6777686B2 (en) | 2000-05-17 | 2004-08-17 | Varian Semiconductor Equipment Associates, Inc. | Control system for indirectly heated cathode ion source |
| US6348764B1 (en) | 2000-08-17 | 2002-02-19 | Taiwan Semiconductor Manufacturing Company, Ltd | Indirect hot cathode (IHC) ion source |
| US6664548B2 (en) * | 2002-05-01 | 2003-12-16 | Axcelis Technologies, Inc. | Ion source and coaxial inductive coupler for ion implantation system |
| US7138768B2 (en) | 2002-05-23 | 2006-11-21 | Varian Semiconductor Equipment Associates, Inc. | Indirectly heated cathode ion source |
| US20050061997A1 (en) * | 2003-09-24 | 2005-03-24 | Benveniste Victor M. | Ion beam slit extraction with mass separation |
| US7342236B2 (en) * | 2004-02-23 | 2008-03-11 | Veeco Instruments, Inc. | Fluid-cooled ion source |
| US7112789B2 (en) * | 2004-05-18 | 2006-09-26 | White Nicholas R | High aspect ratio, high mass resolution analyzer magnet and system for ribbon ion beams |
| US7326941B2 (en) * | 2004-05-18 | 2008-02-05 | Advanced Ion Beam Technology, Inc. | Apparatus and methods for ion beam implantation using ribbon and spot beams |
| JP5214090B2 (ja) * | 2004-11-30 | 2013-06-19 | 株式会社Ｓｅｎ | ビーム偏向走査方法及びビーム偏向走査装置並びにイオン注入方法及びイオン注入装置 |
| US7547900B2 (en) * | 2006-12-22 | 2009-06-16 | Varian Semiconductor Equipment Associates, Inc. | Techniques for providing a ribbon-shaped gas cluster ion beam |
| JP4915671B2 (ja) * | 2007-09-20 | 2012-04-11 | 日新イオン機器株式会社 | イオン源、イオン注入装置およびイオン注入方法 |
| US7800083B2 (en) * | 2007-11-06 | 2010-09-21 | Axcelis Technologies, Inc. | Plasma electron flood for ion beam implanter |
| JP4365441B2 (ja) | 2008-03-31 | 2009-11-18 | 三井造船株式会社 | イオン注入装置、イオン注入方法及びプログラム |
| US8089050B2 (en) * | 2009-11-19 | 2012-01-03 | Twin Creeks Technologies, Inc. | Method and apparatus for modifying a ribbon-shaped ion beam |
| US8921802B2 (en) * | 2011-03-17 | 2014-12-30 | Nicholas R. White | Mass analyzer apparatus and systems operative for focusing ribbon ion beams and for separating desired ion species from unwanted ion species in ribbon ion beams |
| US8723135B2 (en) * | 2012-04-03 | 2014-05-13 | Nissin Ion Equipment Co., Ltd. | Ion beam bending magnet for a ribbon-shaped ion beam |
-
2014
- 2014-11-26 US US14/392,407 patent/US9711318B2/en active Active
- 2014-11-26 EP EP14871361.3A patent/EP3084804B1/en active Active
- 2014-11-26 JP JP2016533174A patent/JP6469682B2/ja active Active
- 2014-11-26 WO PCT/US2014/000216 patent/WO2015094381A1/en not_active Ceased
- 2014-12-04 TW TW103142191A patent/TWI648761B/zh active
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