JP6469554B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP6469554B2
JP6469554B2 JP2015179683A JP2015179683A JP6469554B2 JP 6469554 B2 JP6469554 B2 JP 6469554B2 JP 2015179683 A JP2015179683 A JP 2015179683A JP 2015179683 A JP2015179683 A JP 2015179683A JP 6469554 B2 JP6469554 B2 JP 6469554B2
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JP
Japan
Prior art keywords
word line
voltage
semiconductor device
pmos transistor
driver
Prior art date
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Application number
JP2015179683A
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English (en)
Japanese (ja)
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JP2017054570A5 (enExample
JP2017054570A (ja
Inventor
石井　雄一郎
雄一郎 石井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
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Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2015179683A priority Critical patent/JP6469554B2/ja
Priority to US15/212,162 priority patent/US9721647B2/en
Priority to CN201610704791.5A priority patent/CN106531206B/zh
Publication of JP2017054570A publication Critical patent/JP2017054570A/ja
Priority to US15/627,535 priority patent/US10255970B2/en
Publication of JP2017054570A5 publication Critical patent/JP2017054570A5/ja
Priority to US16/145,342 priority patent/US10354722B2/en
Application granted granted Critical
Publication of JP6469554B2 publication Critical patent/JP6469554B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/418—Address circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1075—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers for multiport memories each having random access ports and serial ports, e.g. video RAM
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/18—Peripheral circuit regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Multimedia (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
JP2015179683A 2015-09-11 2015-09-11 半導体装置 Active JP6469554B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2015179683A JP6469554B2 (ja) 2015-09-11 2015-09-11 半導体装置
US15/212,162 US9721647B2 (en) 2015-09-11 2016-07-15 Semiconductor device
CN201610704791.5A CN106531206B (zh) 2015-09-11 2016-08-22 半导体器件
US15/627,535 US10255970B2 (en) 2015-09-11 2017-06-20 Semiconductor device
US16/145,342 US10354722B2 (en) 2015-09-11 2018-09-28 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015179683A JP6469554B2 (ja) 2015-09-11 2015-09-11 半導体装置

Publications (3)

Publication Number Publication Date
JP2017054570A JP2017054570A (ja) 2017-03-16
JP2017054570A5 JP2017054570A5 (enExample) 2018-06-28
JP6469554B2 true JP6469554B2 (ja) 2019-02-13

Family

ID=58238935

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015179683A Active JP6469554B2 (ja) 2015-09-11 2015-09-11 半導体装置

Country Status (3)

Country Link
US (3) US9721647B2 (enExample)
JP (1) JP6469554B2 (enExample)
CN (1) CN106531206B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6469554B2 (ja) * 2015-09-11 2019-02-13 ルネサスエレクトロニクス株式会社 半導体装置
US9786363B1 (en) * 2016-11-01 2017-10-10 Taiwan Semiconductor Manufacturing Co., Ltd. Word-line enable pulse generator, SRAM and method for adjusting word-line enable time of SRAM
US10943645B2 (en) * 2018-07-31 2021-03-09 Taiwan Semiconductor Manufacturing Company, Ltd Memory device with a booster word line
JP7270451B2 (ja) * 2019-04-26 2023-05-10 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の駆動方法
US11189336B2 (en) * 2019-10-30 2021-11-30 Taiwan Semiconductor Manufacturing Company, Ltd. Word line driving device for minimizing RC delay
JP2021108307A (ja) 2019-12-27 2021-07-29 キオクシア株式会社 半導体記憶装置
US11170830B2 (en) * 2020-02-11 2021-11-09 Taiwan Semiconductor Manufacturing Company Limited Word line driver for low voltage operation
US11211113B1 (en) * 2020-08-18 2021-12-28 Micron Technology, Inc. Integrated assemblies comprising wordlines having ends selectively shunted to low voltage for speed transitioning
KR20220058284A (ko) 2020-10-30 2022-05-09 삼성전자주식회사 워드 라인 보조 셀을 갖는 셀 어레이를 포함하는 집적 회로
US11521670B2 (en) * 2020-11-12 2022-12-06 Micron Technology, Inc. Word lines coupled to pull-down transistors, and related devices, systems, and methods

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55150189A (en) * 1979-05-10 1980-11-21 Nec Corp Memory circuit
JPS60226095A (ja) * 1984-04-25 1985-11-11 Hitachi Micro Comput Eng Ltd 半導体記憶装置
JPS63276793A (ja) * 1987-05-07 1988-11-15 Nec Ic Microcomput Syst Ltd ワ−ド線駆動回路
JPH06203579A (ja) * 1993-01-08 1994-07-22 Fujitsu Ltd 出力回路及び記憶装置
JP3908493B2 (ja) * 2001-08-30 2007-04-25 株式会社東芝 電子回路及び半導体記憶装置
JP4439167B2 (ja) * 2002-08-30 2010-03-24 株式会社ルネサステクノロジ 半導体記憶装置
US7064981B2 (en) * 2004-08-04 2006-06-20 Micron Technology, Inc. NAND string wordline delay reduction
JP4912016B2 (ja) * 2005-05-23 2012-04-04 ルネサスエレクトロニクス株式会社 半導体記憶装置
JP4631743B2 (ja) * 2006-02-27 2011-02-16 ソニー株式会社 半導体装置
US7379354B2 (en) * 2006-05-16 2008-05-27 Texas Instruments Incorporated Methods and apparatus to provide voltage control for SRAM write assist circuits
US7733686B2 (en) * 2006-12-30 2010-06-08 Texas Instruments Incorporated Pulse width control for read and write assist for SRAM circuits
US8014226B2 (en) * 2009-12-22 2011-09-06 Arm Limited Integrated circuit memory with word line driving helper circuits
JP2014067942A (ja) * 2012-09-27 2014-04-17 Toshiba Corp 不揮発性半導体記憶装置
JP2014099225A (ja) 2012-11-14 2014-05-29 Renesas Electronics Corp 半導体装置
JP6469554B2 (ja) * 2015-09-11 2019-02-13 ルネサスエレクトロニクス株式会社 半導体装置

Also Published As

Publication number Publication date
US20170287553A1 (en) 2017-10-05
CN106531206A (zh) 2017-03-22
US20190035456A1 (en) 2019-01-31
CN106531206B (zh) 2022-05-27
US10354722B2 (en) 2019-07-16
US10255970B2 (en) 2019-04-09
US9721647B2 (en) 2017-08-01
JP2017054570A (ja) 2017-03-16
US20170076785A1 (en) 2017-03-16

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