JP4631743B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP4631743B2 JP4631743B2 JP2006049730A JP2006049730A JP4631743B2 JP 4631743 B2 JP4631743 B2 JP 4631743B2 JP 2006049730 A JP2006049730 A JP 2006049730A JP 2006049730 A JP2006049730 A JP 2006049730A JP 4631743 B2 JP4631743 B2 JP 4631743B2
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- circuit
- drive circuit
- drive
- semiconductor device
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- 239000004065 semiconductor Substances 0.000 title claims description 44
- 230000007704 transition Effects 0.000 claims description 27
- 230000000630 rising effect Effects 0.000 claims description 19
- 230000001133 acceleration Effects 0.000 claims description 8
- 230000008859 change Effects 0.000 claims description 4
- 238000012544 monitoring process Methods 0.000 claims 1
- 230000001360 synchronised effect Effects 0.000 claims 1
- 238000010200 validation analysis Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 32
- 230000000694 effects Effects 0.000 description 9
- 238000003384 imaging method Methods 0.000 description 9
- 238000009792 diffusion process Methods 0.000 description 8
- 230000004913 activation Effects 0.000 description 7
- 230000003321 amplification Effects 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 6
- 238000003199 nucleic acid amplification method Methods 0.000 description 6
- 230000009467 reduction Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 230000006872 improvement Effects 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000001444 catalytic combustion detection Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 238000013341 scale-up Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/408—Address circuits
- G11C11/4085—Word line control circuits, e.g. word line drivers, - boosters, - pull-up, - pull-down, - precharge
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/01—Modifications for accelerating switching
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
- H03K3/356104—Bistable circuits using complementary field-effect transistors
- H03K3/356165—Bistable circuits using complementary field-effect transistors using additional transistors in the feedback circuit
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Mathematical Physics (AREA)
- General Engineering & Computer Science (AREA)
- Computing Systems (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Logic Circuits (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Pulse Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Description
Claims (11)
- 遅延を有する被駆動回路と、
複数の駆動電圧が切り替えられる駆動信号により前記被駆動回路を駆動する駆動回路と、
前記駆動信号を入力し、前記駆動回路が前記駆動電圧を切り替えることにより前記駆動信号に対して行う複数の駆動のうち、入力される有効化信号に応じて選択される1つ以上の駆動を加速する補助駆動回路と
を有する半導体装置。 - 前記駆動回路は、複数の駆動制御信号に基づいて前記複数の駆動電圧を切り替えて前記被駆動回路に供給し、
前記有効化信号は、加速する駆動に対応する1つ以上の前記駆動制御信号に同期した複数の信号である
請求項1記載の半導体装置。 - 前記補助駆動回路は、
前記駆動信号のレベル変化を論理閾値を用いて検出するレベルセンス回路と、
前記レベルセンス回路の出力と前記有効化信号とに基づいて前記駆動の加速動作を行う補助動作回路と
を有する請求項1または2記載の半導体装置。 - 前記補助駆動回路は、
異なる論理閾値を有する複数のレベルセンス回路と、
対応する前記レベルセンス回路の出力と前記有効化信号とに基づいて、該有効化信号により選択される複数の駆動の加速動作を行う複数の補助動作回路と
を有する請求項1または2記載の半導体装置。 - 前記複数のレベルセンス回路の複数の前記論理閾値は、立ち上がり駆動の閾値が、立下り駆動の閾値よりも低い
請求項4記載の半導体装置。 - 前記複数のレベルセンス回路が有する複数の前記論理閾値の各々が、切り替え前後の2つの駆動電圧の間に設定されている
請求項4または5記載の半導体装置。 - 前記被駆動回路の任意の地点に、一つもしくは複数の前記補助駆動回路を有する
請求項1〜6の何れかに記載の半導体装置。 - 前記補助駆動回路は、
前記被駆動回路の回路負荷の信号遷移を監視するレベルセンス回路と、
前記加速駆動した状態を一時的に記憶するフラグメモリと
を有し、
前記レベルセンス回路と前記フラグメモリの各出力を駆動の判定に用いて前記被駆動回路の負荷を駆動する
請求項1に記載の半導体装置。 - 前記補助駆動回路を有する固体撮像装置である
請求項1〜8の何れかに記載の半導体装置。 - 前記補助駆動回路を有する記憶装置である
請求項1〜8の何れかに記載の半導体装置。 - 前記補助駆動回路を有する配列型論理回路である
請求項1〜8の何れかに記載の半導体装置。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006049730A JP4631743B2 (ja) | 2006-02-27 | 2006-02-27 | 半導体装置 |
TW096105288A TW200807881A (en) | 2006-02-27 | 2007-02-13 | Semiconductor device |
KR1020070018937A KR101387895B1 (ko) | 2006-02-27 | 2007-02-26 | 반도체 장치 |
US11/678,670 US8659324B2 (en) | 2006-02-27 | 2007-02-26 | Semiconductor device with auxiliary driving circuit |
CNB2007101035900A CN100486306C (zh) | 2006-02-27 | 2007-02-27 | 半导体设备 |
US12/642,398 US20100109716A1 (en) | 2006-02-27 | 2009-12-18 | Semiconductor device |
US14/602,924 US9438835B2 (en) | 2006-02-27 | 2015-01-22 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006049730A JP4631743B2 (ja) | 2006-02-27 | 2006-02-27 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007228470A JP2007228470A (ja) | 2007-09-06 |
JP4631743B2 true JP4631743B2 (ja) | 2011-02-16 |
Family
ID=38549795
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006049730A Expired - Fee Related JP4631743B2 (ja) | 2006-02-27 | 2006-02-27 | 半導体装置 |
Country Status (5)
Country | Link |
---|---|
US (3) | US8659324B2 (ja) |
JP (1) | JP4631743B2 (ja) |
KR (1) | KR101387895B1 (ja) |
CN (1) | CN100486306C (ja) |
TW (1) | TW200807881A (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4631743B2 (ja) * | 2006-02-27 | 2011-02-16 | ソニー株式会社 | 半導体装置 |
JP5558278B2 (ja) * | 2010-09-10 | 2014-07-23 | 株式会社東芝 | 固体撮像装置 |
JP2012165044A (ja) * | 2011-02-03 | 2012-08-30 | Toshiba Corp | 固体撮像装置 |
CN102637450B (zh) * | 2012-04-13 | 2014-09-17 | 中国科学院微电子研究所 | 电流共享型存储器的地址解码器 |
FR3027402B1 (fr) * | 2014-10-21 | 2016-11-18 | Centre Nat Rech Scient | Circuit et procede pour le test sur puce d'une matrice de pixels |
JP6469554B2 (ja) * | 2015-09-11 | 2019-02-13 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US10658026B2 (en) | 2017-05-26 | 2020-05-19 | Taiwan Semiconductor Manufacturing Company Limited | Word line pulse width control circuit in static random access memory |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63276793A (ja) * | 1987-05-07 | 1988-11-15 | Nec Ic Microcomput Syst Ltd | ワ−ド線駆動回路 |
JPH03225694A (ja) * | 1990-01-31 | 1991-10-04 | Sony Corp | 半導体メモリにおけるワード線の駆動方法 |
JPH10255477A (ja) * | 1997-03-13 | 1998-09-25 | Fujitsu Ltd | 駆動回路及びそれを利用した半導体記憶装置 |
JP2000286692A (ja) * | 1999-03-31 | 2000-10-13 | Sharp Corp | 入出力バッファ回路 |
JP2002353312A (ja) * | 2001-05-24 | 2002-12-06 | Hitachi Ltd | 半導体集積回路装置 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61237292A (ja) * | 1985-04-15 | 1986-10-22 | Hitachi Micro Comput Eng Ltd | 半導体記憶装置 |
JP4116732B2 (ja) | 1999-03-31 | 2008-07-09 | オリンパス株式会社 | 送信装置および受信装置 |
JP4337177B2 (ja) * | 1999-07-09 | 2009-09-30 | ソニー株式会社 | 固体撮像素子およびその駆動方法 |
JP4019409B2 (ja) | 2001-11-02 | 2007-12-12 | ソニー株式会社 | 固体撮像素子 |
JP2003143480A (ja) * | 2001-11-06 | 2003-05-16 | Sony Corp | 固体撮像装置およびその駆動方法 |
US6947022B2 (en) * | 2002-02-11 | 2005-09-20 | National Semiconductor Corporation | Display line drivers and method for signal propagation delay compensation |
TWI256771B (en) * | 2002-03-27 | 2006-06-11 | Ind Tech Res Inst | Capacitance coupling acceleration device |
US7005910B2 (en) * | 2004-01-16 | 2006-02-28 | Arm Physical Ip, Inc. | Feed-forward circuit for reducing delay through an input buffer |
US7049863B2 (en) * | 2004-07-13 | 2006-05-23 | Skyworks Solutions, Inc. | Output driver circuit with reduced RF noise, reduced power consumption, and reduced load capacitance susceptibility |
KR100568545B1 (ko) * | 2004-10-05 | 2006-04-07 | 삼성전자주식회사 | 신호 구동회로 |
JP4631743B2 (ja) * | 2006-02-27 | 2011-02-16 | ソニー株式会社 | 半導体装置 |
FR2911450A1 (fr) * | 2007-01-15 | 2008-07-18 | St Microelectronics Sa | Circuit tampon a haute vitesse |
-
2006
- 2006-02-27 JP JP2006049730A patent/JP4631743B2/ja not_active Expired - Fee Related
-
2007
- 2007-02-13 TW TW096105288A patent/TW200807881A/zh unknown
- 2007-02-26 US US11/678,670 patent/US8659324B2/en active Active
- 2007-02-26 KR KR1020070018937A patent/KR101387895B1/ko not_active IP Right Cessation
- 2007-02-27 CN CNB2007101035900A patent/CN100486306C/zh not_active Expired - Fee Related
-
2009
- 2009-12-18 US US12/642,398 patent/US20100109716A1/en not_active Abandoned
-
2015
- 2015-01-22 US US14/602,924 patent/US9438835B2/en not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63276793A (ja) * | 1987-05-07 | 1988-11-15 | Nec Ic Microcomput Syst Ltd | ワ−ド線駆動回路 |
JPH03225694A (ja) * | 1990-01-31 | 1991-10-04 | Sony Corp | 半導体メモリにおけるワード線の駆動方法 |
JPH10255477A (ja) * | 1997-03-13 | 1998-09-25 | Fujitsu Ltd | 駆動回路及びそれを利用した半導体記憶装置 |
JP2000286692A (ja) * | 1999-03-31 | 2000-10-13 | Sharp Corp | 入出力バッファ回路 |
JP2002353312A (ja) * | 2001-05-24 | 2002-12-06 | Hitachi Ltd | 半導体集積回路装置 |
Also Published As
Publication number | Publication date |
---|---|
JP2007228470A (ja) | 2007-09-06 |
US20100109716A1 (en) | 2010-05-06 |
TW200807881A (en) | 2008-02-01 |
US20150215552A1 (en) | 2015-07-30 |
US20080252356A1 (en) | 2008-10-16 |
KR101387895B1 (ko) | 2014-04-21 |
US9438835B2 (en) | 2016-09-06 |
CN100486306C (zh) | 2009-05-06 |
CN101060594A (zh) | 2007-10-24 |
US8659324B2 (en) | 2014-02-25 |
KR20070089075A (ko) | 2007-08-30 |
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