JP6457307B2 - 半導体装置の製造方法、及び半導体製造装置 - Google Patents

半導体装置の製造方法、及び半導体製造装置 Download PDF

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JP6457307B2
JP6457307B2 JP2015051953A JP2015051953A JP6457307B2 JP 6457307 B2 JP6457307 B2 JP 6457307B2 JP 2015051953 A JP2015051953 A JP 2015051953A JP 2015051953 A JP2015051953 A JP 2015051953A JP 6457307 B2 JP6457307 B2 JP 6457307B2
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film formation
chamber
semiconductor substrate
formation chamber
film
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JP2016172881A (ja
JP2016172881A5 (enExample
Inventor
坂田　敦子
敦子 坂田
桂 渡邉
桂 渡邉
和田　純一
純一 和田
政幸 北村
政幸 北村
健士 石崎
健士 石崎
真也 奥田
真也 奥田
博隆 荻原
博隆 荻原
啓 若月
啓 若月
大輔 池野
大輔 池野
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Kioxia Corp
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Toshiba Memory Corp
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Priority to US14/751,603 priority patent/US9779978B2/en
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
    • C—CHEMISTRY; METALLURGY
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/54—Apparatus specially adapted for continuous coating
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  • Engineering & Computer Science (AREA)
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  • Physics & Mathematics (AREA)
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  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
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  • General Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Vapour Deposition (AREA)
JP2015051953A 2015-03-16 2015-03-16 半導体装置の製造方法、及び半導体製造装置 Active JP6457307B2 (ja)

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JP2015051953A JP6457307B2 (ja) 2015-03-16 2015-03-16 半導体装置の製造方法、及び半導体製造装置
US14/751,603 US9779978B2 (en) 2015-03-16 2015-06-26 Method of manufacturing semiconductor device and semiconductor manufacturing apparatus

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JP2015051953A JP6457307B2 (ja) 2015-03-16 2015-03-16 半導体装置の製造方法、及び半導体製造装置

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JP6319158B2 (ja) * 2015-04-03 2018-05-09 トヨタ自動車株式会社 成膜方法および成膜装置
JP6538436B2 (ja) * 2015-06-18 2019-07-03 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
US9905462B2 (en) 2015-08-20 2018-02-27 Toshiba Memory Corporation Semiconductor device and method for manufacturing the same
NZ785529A (en) * 2016-07-29 2023-03-31 Molecular Imprints Inc Substrate loading in microlithography
JP7333712B2 (ja) * 2019-06-05 2023-08-25 東京エレクトロン株式会社 静電チャック、支持台及びプラズマ処理装置
EP4207244A1 (en) 2019-08-12 2023-07-05 Kurt J. Lesker Company Ultra high purity conditions for atomic scale processing
US20240404989A1 (en) * 2023-06-02 2024-12-05 Taiwan Semiconductor Manufacturing Company Limited Parallel plasma treatment and thermocompression bonding and apparatus for effecting the same

Family Cites Families (8)

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Publication number Priority date Publication date Assignee Title
US6063244A (en) * 1998-05-21 2000-05-16 International Business Machines Corporation Dual chamber ion beam sputter deposition system
JP3064268B2 (ja) * 1998-10-29 2000-07-12 アプライド マテリアルズ インコーポレイテッド 成膜方法及び装置
JP4683453B2 (ja) * 2001-04-27 2011-05-18 芝浦メカトロニクス株式会社 真空処理装置
US20070215036A1 (en) * 2006-03-15 2007-09-20 Hyung-Sang Park Method and apparatus of time and space co-divided atomic layer deposition
JP2009065068A (ja) 2007-09-10 2009-03-26 Tokyo Electron Ltd 基板処理装置、基板処理装置の汚染抑制方法及び記憶媒体
JP2012054508A (ja) * 2010-09-03 2012-03-15 Tokyo Electron Ltd 成膜装置
US8399353B2 (en) 2011-01-27 2013-03-19 Tokyo Electron Limited Methods of forming copper wiring and copper film, and film forming system
US9135338B2 (en) 2012-03-01 2015-09-15 Harris Corporation Systems and methods for efficient feature based image and video analysis

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