JP6448491B2 - パーティクル測定用マスク - Google Patents
パーティクル測定用マスク Download PDFInfo
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- JP6448491B2 JP6448491B2 JP2015139924A JP2015139924A JP6448491B2 JP 6448491 B2 JP6448491 B2 JP 6448491B2 JP 2015139924 A JP2015139924 A JP 2015139924A JP 2015139924 A JP2015139924 A JP 2015139924A JP 6448491 B2 JP6448491 B2 JP 6448491B2
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- JP
- Japan
- Prior art keywords
- mask
- particle
- particle measurement
- particles
- measurement
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
- G01N2021/95676—Masks, reticles, shadow masks
Landscapes
- Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Public Health (AREA)
- Epidemiology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Engineering & Computer Science (AREA)
- Analytical Chemistry (AREA)
- Pathology (AREA)
- Immunology (AREA)
- General Health & Medical Sciences (AREA)
- Biochemistry (AREA)
- Chemical & Material Sciences (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
図1は、第1の実施形態によるパーティクル測定用マスクの構造の一例を模式的に示す図であり、(a)は斜視図を示し、(b)は(a)の上面図を示す図であり、(c)は(b)のA−A断面図である。パーティクル測定用マスク10は、マスクを保管するマスクケース内と、マスクが使用される露光装置内とにおける浮遊パーティクルの測定機能を有するマスクである。パーティクル測定用マスク10は、通常の製品製造の際のリソグラフィで使用されるマスク(以下、製品マスクという)と同じ寸法を有し、製品マスクを保管するマスクケース内に保管可能である。なお、以下では、EUV露光装置で使用されるパーティクル測定用マスク10を例に挙げて説明する。
第2の実施形態では、第1の実施形態と同様に、マスクケース内と露光装置内でのスキャン動作中でのパーティクル測定が可能なパーティクル測定用マスクの他の構成例について説明する。
第1と第2の実施形態では、露光装置内でのスキャン動作中でのパーティクル測定が可能なパーティクル測定用マスクについて説明した。第3の実施形態では、マスクケース内でパーティクル測定が可能なパーティクル測定用マスクとパーティクル管理方法について説明する。
Claims (3)
- 第1マスク基板と、
マスクステージと接触する側の前記第1マスク基板の第1主面と対向する第2主面の周縁部に配置される支持部材と、
前記支持部材の側面に配置され、前記第2主面近傍でのパーティクルの有無を測定するパーティクル測定手段と、
を備え、
前記支持部材は、当該パーティクル測定用マスクの露光装置内でのスキャン方向に垂直な方向の前記第1マスク基板の両端部に、前記スキャン方向に延在して設けられる第1支持部および第2支持部を有し、
前記パーティクル測定手段は、前記第1支持部および前記第2支持部に設けられ、
前記パーティクル測定手段は、
前記第1マスク基板の前記第2主面側を通過するパーティクルを検出するパーティクル検出部と、
前記パーティクル検出部による前記パーティクルの検出の有無をロギングするロギング部と、
を含むパーティクル測定用マスク。 - 前記パーティクル検出部は、発光素子と、前記発光素子から出射された光の受光強度を測定する受光素子と、を備える請求項1に記載のパーティクル測定用マスク。
- 前記パーティクル測定手段は、当該パーティクル測定用マスクにかかる加速度を計測する加速度計測部をさらに有し、
前記ロギング部は、前記加速度計測部によって計測された加速度もロギングする請求項1に記載のパーティクル測定用マスク。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015139924A JP6448491B2 (ja) | 2015-07-13 | 2015-07-13 | パーティクル測定用マスク |
US14/880,451 US9513229B1 (en) | 2015-07-13 | 2015-10-12 | Particle measurement mask and particle managing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015139924A JP6448491B2 (ja) | 2015-07-13 | 2015-07-13 | パーティクル測定用マスク |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017021249A JP2017021249A (ja) | 2017-01-26 |
JP6448491B2 true JP6448491B2 (ja) | 2019-01-09 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2015139924A Active JP6448491B2 (ja) | 2015-07-13 | 2015-07-13 | パーティクル測定用マスク |
Country Status (2)
Country | Link |
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US (1) | US9513229B1 (ja) |
JP (1) | JP6448491B2 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110702692B (zh) * | 2019-10-25 | 2023-03-10 | 长江存储科技有限责任公司 | 掩膜版监测装置及监测方法 |
CN114077163B (zh) * | 2020-08-14 | 2023-03-31 | 长鑫存储技术有限公司 | 光罩传送装置及曝光系统 |
TWI769514B (zh) * | 2020-09-01 | 2022-07-01 | 家登精密工業股份有限公司 | 光罩盒潔淨設備 |
US11592754B2 (en) | 2021-04-22 | 2023-02-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Advanced load port for photolithography mask inspection tool |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01140817U (ja) * | 1988-03-23 | 1989-09-27 | ||
JPH08220009A (ja) | 1995-02-08 | 1996-08-30 | Canon Inc | 異物検査装置及びそれを用いたデバイスの製造方法 |
JP3644246B2 (ja) * | 1998-04-10 | 2005-04-27 | 三菱電機株式会社 | X線露光方法 |
JP2000221138A (ja) | 1999-02-01 | 2000-08-11 | Nikon Corp | 基板検査装置および基板検査方法 |
JP2001118766A (ja) * | 1999-10-15 | 2001-04-27 | Canon Inc | X線マスク及びそれを用いたデバイスの製造方法 |
JP2001159613A (ja) | 1999-11-30 | 2001-06-12 | Nikon Corp | 異物検査装置およびこれを備えた露光装置 |
JP4002429B2 (ja) * | 2001-12-18 | 2007-10-31 | 株式会社日立ハイテクノロジーズ | 異物検査機能を備えた露光装置及びその装置における異物検査方法 |
US20050225308A1 (en) * | 2004-03-31 | 2005-10-13 | Orvek Kevin J | Real-time monitoring of particles in semiconductor vacuum environment |
US8136055B2 (en) * | 2008-07-30 | 2012-03-13 | International Business Machines Corporation | Systems for real-time contamination, environmental, or physical monitoring of a photomask |
JP2011191684A (ja) * | 2010-03-16 | 2011-09-29 | Toshiba Corp | マスク原板、計測方法および露光装置 |
JP5672920B2 (ja) * | 2010-10-05 | 2015-02-18 | 凸版印刷株式会社 | ペリクル及び露光装置 |
US9607833B2 (en) * | 2015-01-30 | 2017-03-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | System and method for photomask particle detection |
-
2015
- 2015-07-13 JP JP2015139924A patent/JP6448491B2/ja active Active
- 2015-10-12 US US14/880,451 patent/US9513229B1/en active Active
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Publication number | Publication date |
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JP2017021249A (ja) | 2017-01-26 |
US9513229B1 (en) | 2016-12-06 |
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