JP6447527B2 - 樹脂成形体 - Google Patents
樹脂成形体 Download PDFInfo
- Publication number
- JP6447527B2 JP6447527B2 JP2016010823A JP2016010823A JP6447527B2 JP 6447527 B2 JP6447527 B2 JP 6447527B2 JP 2016010823 A JP2016010823 A JP 2016010823A JP 2016010823 A JP2016010823 A JP 2016010823A JP 6447527 B2 JP6447527 B2 JP 6447527B2
- Authority
- JP
- Japan
- Prior art keywords
- resin member
- roughened
- thermosetting resin
- thermoplastic resin
- sealing surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229920005989 resin Polymers 0.000 title claims description 136
- 239000011347 resin Substances 0.000 title claims description 136
- 229920001187 thermosetting polymer Polymers 0.000 claims description 114
- 238000007789 sealing Methods 0.000 claims description 64
- 229920005992 thermoplastic resin Polymers 0.000 claims description 60
- 125000000524 functional group Chemical group 0.000 claims description 23
- 239000000654 additive Substances 0.000 claims description 20
- 230000000996 additive effect Effects 0.000 claims description 20
- 239000004065 semiconductor Substances 0.000 description 36
- 238000000034 method Methods 0.000 description 23
- 238000007788 roughening Methods 0.000 description 22
- 239000002344 surface layer Substances 0.000 description 15
- 239000000463 material Substances 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000000126 substance Substances 0.000 description 7
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 6
- 125000003700 epoxy group Chemical group 0.000 description 5
- 239000000356 contaminant Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- 239000000470 constituent Substances 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- 239000004734 Polyphenylene sulfide Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 125000003277 amino group Chemical group 0.000 description 2
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000000748 compression moulding Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000012447 hatching Effects 0.000 description 2
- 238000010137 moulding (plastic) Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229920000069 polyphenylene sulfide Polymers 0.000 description 2
- 238000004382 potting Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000001721 transfer moulding Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000003851 corona treatment Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 235000014113 dietary fatty acids Nutrition 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 239000000194 fatty acid Substances 0.000 description 1
- 229930195729 fatty acid Natural products 0.000 description 1
- 150000004665 fatty acids Chemical class 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000006082 mold release agent Substances 0.000 description 1
- -1 polyphenylene terephthalate Polymers 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000003856 thermoforming Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C65/00—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3135—Double encapsulation or coating and encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3142—Sealing arrangements between parts, e.g. adhesion promotors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B3/00—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form
- B32B3/26—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48153—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate
- H01L2224/48175—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/23—Sheet including cover or casing
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Lining Or Joining Of Plastics Or The Like (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Description
封止面において露出面との境界側から熱可塑性樹脂部材の内部側へ向かう方向を第1の方向(Y1)としたとき、粗化面は、第1の方向に平行な軸まわりに封止面の全周に形成された閉環形状をなすものであり、封止面においては、閉環形状をなす粗化面が、非粗化面を間隔として第1の方向に沿って3個以上、配列されており、3個以上の粗化面のうち配列方向の両端のものは、当該両端の間に位置するものよりも、第1の方向に沿った幅が大きい。
本発明の第1実施形態にかかる樹脂成形体について、図1、図2を参照して述べる。なお、図1では、後述する熱硬化性樹脂部材10の表面に形成された粗化面11aの凹凸形状、段差11cについては、わかりやすくするために、大きくデフォルメして示してある。また、図2では、熱硬化性樹脂部材10の表面に形成された粗化面11aについて、その表面に斜線ハッチングを施して示している。
次に、本実施形態の半導体装置の製造方法について、図3〜図6に示される工程図および図7、図8に示されるレーザ照射方法の図も参照して述べる。なお、図7では、電気接続部材40は省略してある。
ところで、本実施形態によれば、封止面11において剥離進展方向である第1の方向Y1に沿って3個の閉環状をなす粗化面11aが、非粗化面11bを間隔として配列された構成となっている。
本発明の第2実施形態にかかる半導体装置について、図9、図10を参照し、上記第1実施形態との相違点を中心に述べることとする。なお、図9では、熱硬化性樹脂部材10の表面に形成された粗化面11aについて、その表面に斜線ハッチングを施して示し、また、電気接続部材40は省略してある。
本発明の第3実施形態にかかる半導体装置について、図11を参照し、上記第1実施形態との相違点を中心に述べることとする。なお、図11では、熱可塑性樹脂部材20中の添加剤20aは省略してある。
なお、上記各実施形態では、粗化面11aは3個であったが、粗化面11aは3個以上の複数個であればよく、たとえば4個、5個あるいは5個以上でもよい。そして、これら場合も、複数個の閉環形状をなす粗化面11aが、第1の方向に沿って順次配列されていればよい。そして、複数個の粗化面11aのうち配列の始端と終端の両端に相当する粗化面11aが上記同様、剥離の犠牲領域として機能し、上記同様の剥離抑制の効果を発揮する。
11 封止面
11a 粗化面
11b 非粗化面
11c 段差
12 露出面
20 熱可塑性樹脂部材
20a 添加剤
Y1 第1の方向
Claims (4)
- 熱硬化性樹脂よりなる熱硬化性樹脂部材(10)と、
前記熱硬化性樹脂部材の表面の一部である封止面(11)を封止する熱可塑性樹脂よりなる熱可塑性樹脂部材(20)と、を備え、
前記熱硬化性樹脂部材の表面の残部である露出面(12)は、前記熱可塑性樹脂部材より露出している樹脂成形体であって、
前記熱硬化性樹脂部材における前記封止面の一部は、粗化処理されていない非粗化面(11b)とされ、前記封止面の残部は、前記非粗化面よりも段差(11c)を有して凹み前記非粗化面よりも粗化された粗化面(11a)とされており、
前記熱可塑性樹脂部材には官能基を含有する添加剤(20a)が添加され、前記粗化面に存在する官能基と前記添加剤に存在する官能基とが化学結合されており、
前記封止面において前記露出面との境界側から前記熱可塑性樹脂部材の内部側へ向かう方向を第1の方向(Y1)としたとき、
前記粗化面は、前記第1の方向に平行な軸まわりに前記封止面の全周に形成された閉環形状をなすものであり、
前記封止面においては、前記閉環形状をなす粗化面が、前記非粗化面を間隔として前記第1の方向に沿って3個以上、配列されており、
前記3個以上の粗化面のうち配列方向の両端のものは、当該両端の間に位置するものよりも、前記第1の方向に沿った幅が大きい樹脂成形体。 - 熱硬化性樹脂よりなる熱硬化性樹脂部材(10)と、
前記熱硬化性樹脂部材の表面の一部である封止面(11)を封止する熱可塑性樹脂よりなる熱可塑性樹脂部材(20)と、を備え、
前記熱硬化性樹脂部材の表面の残部である露出面(12)は、前記熱可塑性樹脂部材より露出している樹脂成形体であって、
前記熱硬化性樹脂部材における前記封止面の一部は、粗化処理されていない非粗化面(11b)とされ、前記封止面の残部は、前記非粗化面よりも段差(11c)を有して凹み前記非粗化面よりも粗化された粗化面(11a)とされており、
前記熱可塑性樹脂部材には官能基を含有する添加剤(20a)が添加され、前記粗化面に存在する官能基と前記添加剤に存在する官能基とが化学結合されており、
前記封止面において前記露出面との境界側から前記熱可塑性樹脂部材の内部側へ向かう方向を第1の方向(Y1)としたとき、
前記粗化面は、前記第1の方向に平行な軸まわりに前記封止面の全周に形成された閉環形状をなすものであり、
前記封止面においては、前記閉環形状をなす粗化面が、前記非粗化面を間隔として前記第1の方向に沿って3個以上、配列されており、
前記3個以上の粗化面のうち配列方向の両端のものは、当該両端の間に位置するものよりも、前記段差の高さが大きい樹脂成形体。 - 前記3個以上の粗化面のうち配列方向の両端のものは、当該両端の間に位置するものよりも、前記第1の方向に沿った幅が大きい請求項2に記載の樹脂成形体。
- 前記熱硬化性樹脂部材は、長手方向の軸を前記第1の方向に平行な軸とする角柱状をなすものであり、
前記粗化面は、前記熱硬化性樹脂部材の全ての側面に渡って連続する閉環形状をなすものであり、当該側面間に位置する角部(13)では、当該角部を丸めた形状となるように前記粗化面が形成されている請求項1ないし3のいずれか1つに記載の樹脂成形体。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016010823A JP6447527B2 (ja) | 2016-01-22 | 2016-01-22 | 樹脂成形体 |
CN201780004502.3A CN108367500B (zh) | 2016-01-22 | 2017-01-07 | 树脂成型体 |
US15/768,038 US10446458B2 (en) | 2016-01-22 | 2017-01-07 | Resin molded body |
PCT/JP2017/000352 WO2017126347A1 (ja) | 2016-01-22 | 2017-01-07 | 樹脂成形体 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016010823A JP6447527B2 (ja) | 2016-01-22 | 2016-01-22 | 樹脂成形体 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2017128092A JP2017128092A (ja) | 2017-07-27 |
JP2017128092A5 JP2017128092A5 (ja) | 2018-01-18 |
JP6447527B2 true JP6447527B2 (ja) | 2019-01-09 |
Family
ID=59361726
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016010823A Active JP6447527B2 (ja) | 2016-01-22 | 2016-01-22 | 樹脂成形体 |
Country Status (4)
Country | Link |
---|---|
US (1) | US10446458B2 (ja) |
JP (1) | JP6447527B2 (ja) |
CN (1) | CN108367500B (ja) |
WO (1) | WO2017126347A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102018111712A1 (de) * | 2018-05-16 | 2019-11-21 | Kolektor Group D.O.O. | Elektro-Bauteil und Verfahren zu dessen Herstellung |
JP7037070B2 (ja) * | 2019-01-11 | 2022-03-16 | 日亜化学工業株式会社 | 発光装置の製造方法 |
JP7260828B2 (ja) * | 2019-01-11 | 2023-04-19 | 日亜化学工業株式会社 | 発光装置 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003249605A (ja) | 2002-02-22 | 2003-09-05 | Sharp Corp | 半導体装置、その製造方法、及びその金型 |
JP2007063882A (ja) * | 2005-09-01 | 2007-03-15 | Sho Bond Constr Co Ltd | 拡張ボアホールに取り付けた高耐荷力アンカー構造 |
JP4870535B2 (ja) * | 2006-11-30 | 2012-02-08 | メイラ株式会社 | インサート用部品、樹脂成形体並びに樹脂成形体の製造方法 |
JP5038273B2 (ja) | 2008-09-17 | 2012-10-03 | 三菱電機株式会社 | 樹脂モールド半導体センサ及び製造方法 |
JP2013071312A (ja) * | 2011-09-28 | 2013-04-22 | Hitachi Automotive Systems Ltd | 金属部材と成形樹脂部材との複合成形体および金属部材の表面加工方法 |
JP5857709B2 (ja) | 2011-12-14 | 2016-02-10 | 日産自動車株式会社 | 半導体装置 |
JP6167742B2 (ja) * | 2013-08-09 | 2017-07-26 | 凸版印刷株式会社 | 内容物非付着性包材 |
JP2015162503A (ja) | 2014-02-26 | 2015-09-07 | 株式会社デンソー | 樹脂成形体およびその製造方法 |
CN106030770B (zh) | 2014-02-27 | 2019-06-18 | 株式会社电装 | 树脂成型体及其制造方法 |
-
2016
- 2016-01-22 JP JP2016010823A patent/JP6447527B2/ja active Active
-
2017
- 2017-01-07 WO PCT/JP2017/000352 patent/WO2017126347A1/ja active Application Filing
- 2017-01-07 CN CN201780004502.3A patent/CN108367500B/zh active Active
- 2017-01-07 US US15/768,038 patent/US10446458B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
WO2017126347A1 (ja) | 2017-07-27 |
JP2017128092A (ja) | 2017-07-27 |
CN108367500B (zh) | 2020-06-09 |
CN108367500A (zh) | 2018-08-03 |
US20180315675A1 (en) | 2018-11-01 |
US10446458B2 (en) | 2019-10-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6447527B2 (ja) | 樹脂成形体 | |
WO2015129237A1 (ja) | 樹脂成形体およびその製造方法 | |
US20070247322A1 (en) | Sensor apparatus | |
JP2019041010A (ja) | 樹脂封止型車載電子制御装置 | |
JP2009272414A (ja) | 電子回路の保護構造及びその製造方法 | |
JP2009043429A (ja) | ケーブル類の接合方法およびケーブル類を接合した電子機器 | |
CN111755863A (zh) | 连接器装置 | |
JP6327107B2 (ja) | 樹脂成形体およびその製造方法 | |
JP5835057B2 (ja) | 回路モジュール及びその製造方法 | |
WO2015129236A1 (ja) | 樹脂成形体およびその製造方法 | |
JP5857709B2 (ja) | 半導体装置 | |
JP6428275B2 (ja) | 樹脂成形体 | |
JP6497301B2 (ja) | 樹脂成形体の製造方法 | |
JP2018116768A (ja) | 接続構造体 | |
CN109075467B (zh) | 带模塑部电线 | |
JP6277780B2 (ja) | 樹脂成形体の製造方法 | |
WO2012144570A1 (ja) | フラットケーブル防水コネクタおよびその製造方法 | |
JP6358075B2 (ja) | 樹脂成形体およびその製造方法 | |
JP6295799B2 (ja) | 防水センサ及びその製造方法 | |
JP6413951B2 (ja) | 樹脂成形体およびその製造方法 | |
JP6210922B2 (ja) | 電子部品 | |
JP2005039030A (ja) | 光半導体デバイス | |
JP7511769B2 (ja) | 電気機器配線部品 | |
JP2008251793A (ja) | インサート成形物 | |
JP2007200964A (ja) | 電気回路装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20171129 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20171129 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20181106 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20181119 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 6447527 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |