JP6441675B2 - 電荷検出増幅器 - Google Patents

電荷検出増幅器 Download PDF

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Publication number
JP6441675B2
JP6441675B2 JP2014510883A JP2014510883A JP6441675B2 JP 6441675 B2 JP6441675 B2 JP 6441675B2 JP 2014510883 A JP2014510883 A JP 2014510883A JP 2014510883 A JP2014510883 A JP 2014510883A JP 6441675 B2 JP6441675 B2 JP 6441675B2
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JP
Japan
Prior art keywords
charge detection
gate
detection amplifier
amplifier
pad
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JP2014510883A
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English (en)
Japanese (ja)
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JP2014519261A (ja
JP2014519261A5 (enExample
Inventor
タウフィーク ナシャシビ
タウフィーク ナシャシビ
Original Assignee
オックスフォード インストルメンツ ナノテクノロジー ツールス リミテッド
オックスフォード インストルメンツ ナノテクノロジー ツールス リミテッド
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Publication of JP2014519261A5 publication Critical patent/JP2014519261A5/ja
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/70—Charge amplifiers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/17—Circuit arrangements not adapted to a particular type of detector
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06G—ANALOGUE COMPUTERS
    • G06G7/00—Devices in which the computing operation is performed by varying electric or magnetic quantities
    • G06G7/12—Arrangements for performing computing operations, e.g. operational amplifiers
    • G06G7/18—Arrangements for performing computing operations, e.g. operational amplifiers for integration or differentiation; for forming integrals
    • G06G7/184—Arrangements for performing computing operations, e.g. operational amplifiers for integration or differentiation; for forming integrals using capacitive elements
    • G06G7/186—Arrangements for performing computing operations, e.g. operational amplifiers for integration or differentiation; for forming integrals using capacitive elements using an operational amplifier comprising a capacitor or a resistor in the feedback loop
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/08—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light
    • H03F3/082—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light with FET's
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/257—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are characterised by top-view geometrical layouts, e.g. interdigitated, semi-circular, annular or L-shaped electrodes

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Computer Hardware Design (AREA)
  • Software Systems (AREA)
  • Amplifiers (AREA)
  • Measurement Of Radiation (AREA)
JP2014510883A 2011-05-19 2012-05-17 電荷検出増幅器 Active JP6441675B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB1108420.9 2011-05-19
GB1108420.9A GB2491111B (en) 2011-05-19 2011-05-19 Charge-sensitive amplifier
PCT/GB2012/051114 WO2012156748A1 (en) 2011-05-19 2012-05-17 Charge-sensitive amplifier

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2017003400A Division JP6393347B2 (ja) 2011-05-19 2017-01-12 電荷検出増幅器

Publications (3)

Publication Number Publication Date
JP2014519261A JP2014519261A (ja) 2014-08-07
JP2014519261A5 JP2014519261A5 (enExample) 2017-02-23
JP6441675B2 true JP6441675B2 (ja) 2018-12-19

Family

ID=44279298

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2014510883A Active JP6441675B2 (ja) 2011-05-19 2012-05-17 電荷検出増幅器
JP2017003400A Expired - Fee Related JP6393347B2 (ja) 2011-05-19 2017-01-12 電荷検出増幅器
JP2018111654A Pending JP2018137828A (ja) 2011-05-19 2018-06-12 電荷検出増幅器

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2017003400A Expired - Fee Related JP6393347B2 (ja) 2011-05-19 2017-01-12 電荷検出増幅器
JP2018111654A Pending JP2018137828A (ja) 2011-05-19 2018-06-12 電荷検出増幅器

Country Status (6)

Country Link
US (1) US9397626B2 (enExample)
EP (1) EP2710733B1 (enExample)
JP (3) JP6441675B2 (enExample)
GB (1) GB2491111B (enExample)
PL (1) PL2710733T3 (enExample)
WO (1) WO2012156748A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2882098B1 (en) 2012-08-02 2018-12-05 Horiba, Ltd. Amplifier and radiation detector
US10126437B1 (en) * 2017-05-15 2018-11-13 Prismatic Sensors Ab Detector for x-ray imaging
CN107677723B (zh) * 2017-09-25 2023-06-30 付德君 一种气体团簇离子束质谱的测量方法和装置
IT201800010671A1 (it) * 2018-11-29 2020-05-29 Milano Politecnico Dispositivo preamplificatore di carica e apparato di rivelazione di radiazioni comprendente il dispositivo
EP4134709A1 (en) * 2021-08-13 2023-02-15 Bruker Nano GmbH Hybrid integrated silicon drift detector and method for fabrication thereof
CN115021696B (zh) * 2022-08-02 2023-06-27 宁波中车时代传感技术有限公司 一种电荷放大器电路及振动传感器
NL2032932B1 (en) * 2022-09-01 2024-03-18 Ampleon Netherlands Bv Digital rf amplifier
WO2024258730A1 (en) * 2023-06-16 2024-12-19 Trustees Of Boston University Extended energy range particle detectors and uses thereof

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US4211941A (en) * 1978-08-03 1980-07-08 Rca Corporation Integrated circuitry including low-leakage capacitance
JPS6153756A (ja) * 1984-08-24 1986-03-17 Hitachi Ltd 半導体装置
US4949150A (en) * 1986-04-17 1990-08-14 Exar Corporation Programmable bonding pad with sandwiched silicon oxide and silicon nitride layers
US4829017A (en) * 1986-09-25 1989-05-09 Texas Instruments Incorporated Method for lubricating a high capacity dram cell
US4761385A (en) * 1987-02-10 1988-08-02 Motorola, Inc. Forming a trench capacitor
GB8800949D0 (en) * 1988-01-16 1988-02-17 Link Analytical Ltd Junction field effect transistors
US5170229A (en) * 1988-01-16 1992-12-08 Link Analytical Limited Junction field effect transistors with injector region
US5166679A (en) * 1991-06-06 1992-11-24 The United States Of America As Represented By The Administrator Of The National Aeronautics & Space Administration Driven shielding capacitive proximity sensor
TW291595B (enExample) * 1995-05-30 1996-11-21 At & T Corp
GB2305776B (en) * 1995-09-28 1999-11-17 Gresham Sensor Technology Limi Charge amplifier
US6137138A (en) * 1998-03-06 2000-10-24 Spectrian Corporation MOSFET power transistor having offset gate and drain pads to reduce capacitance
JP4124867B2 (ja) * 1998-07-14 2008-07-23 松下電器産業株式会社 変換装置
KR100294449B1 (ko) * 1998-07-15 2001-07-12 윤종용 본딩패드하부에형성되는커패시터를구비한반도체집적회로장치
US6690251B2 (en) * 2001-04-11 2004-02-10 Kyocera Wireless Corporation Tunable ferro-electric filter
US6587003B2 (en) 2001-04-18 2003-07-01 Canberra Industries. Inc. Charge sensitive preamplifier with pulsed source reset
GB0125661D0 (en) 2001-10-25 2001-12-19 Council Cent Lab Res Councils Amplifiers
US7193216B2 (en) * 2004-10-22 2007-03-20 Oxford Instruments Analytical Oy Method and circuit arrangement for compensating for rate dependent change of conversion factor in a drift-type radiation detector and a detector appliance
JP4672539B2 (ja) * 2005-12-06 2011-04-20 パナソニック株式会社 コンデンサマイクロホン装置
GB2466776A (en) * 2008-12-30 2010-07-07 Wolfson Microelectronics Plc Bootstrapping to reduce the effect of bond pad parasitic capacitance in a MEMS microphone circuit
US8058674B2 (en) 2009-10-07 2011-11-15 Moxtek, Inc. Alternate 4-terminal JFET geometry to reduce gate to source capacitance
EP2882098B1 (en) * 2012-08-02 2018-12-05 Horiba, Ltd. Amplifier and radiation detector

Also Published As

Publication number Publication date
EP2710733A1 (en) 2014-03-26
PL2710733T3 (pl) 2018-11-30
JP2017098996A (ja) 2017-06-01
US9397626B2 (en) 2016-07-19
GB201108420D0 (en) 2011-07-06
JP2014519261A (ja) 2014-08-07
JP6393347B2 (ja) 2018-09-19
WO2012156748A1 (en) 2012-11-22
US20150030132A1 (en) 2015-01-29
EP2710733B1 (en) 2018-06-20
GB2491111B (en) 2015-08-19
GB2491111A (en) 2012-11-28
JP2018137828A (ja) 2018-08-30

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