JP6439966B2 - イオン源 - Google Patents

イオン源 Download PDF

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Publication number
JP6439966B2
JP6439966B2 JP2014204446A JP2014204446A JP6439966B2 JP 6439966 B2 JP6439966 B2 JP 6439966B2 JP 2014204446 A JP2014204446 A JP 2014204446A JP 2014204446 A JP2014204446 A JP 2014204446A JP 6439966 B2 JP6439966 B2 JP 6439966B2
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JP
Japan
Prior art keywords
plasma generation
generation chamber
cathode
support base
ion source
Prior art date
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JP2014204446A
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English (en)
Japanese (ja)
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JP2016076322A (ja
JP2016076322A5 (enExample
Inventor
裕章 甲斐
裕章 甲斐
一平 西村
一平 西村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissin Ion Equipment Co Ltd
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Nissin Ion Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Nissin Ion Equipment Co Ltd filed Critical Nissin Ion Equipment Co Ltd
Priority to JP2014204446A priority Critical patent/JP6439966B2/ja
Publication of JP2016076322A publication Critical patent/JP2016076322A/ja
Publication of JP2016076322A5 publication Critical patent/JP2016076322A5/ja
Application granted granted Critical
Publication of JP6439966B2 publication Critical patent/JP6439966B2/ja
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  • Electron Sources, Ion Sources (AREA)
JP2014204446A 2014-10-03 2014-10-03 イオン源 Active JP6439966B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2014204446A JP6439966B2 (ja) 2014-10-03 2014-10-03 イオン源

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014204446A JP6439966B2 (ja) 2014-10-03 2014-10-03 イオン源

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2016117597A Division JP6268680B2 (ja) 2016-06-14 2016-06-14 イオン源の運転方法

Publications (3)

Publication Number Publication Date
JP2016076322A JP2016076322A (ja) 2016-05-12
JP2016076322A5 JP2016076322A5 (enExample) 2017-03-16
JP6439966B2 true JP6439966B2 (ja) 2018-12-19

Family

ID=55951582

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014204446A Active JP6439966B2 (ja) 2014-10-03 2014-10-03 イオン源

Country Status (1)

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JP (1) JP6439966B2 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6455494B2 (ja) * 2016-09-15 2019-01-23 日新イオン機器株式会社 イオン源
JP7437611B2 (ja) * 2020-06-11 2024-02-26 日新イオン機器株式会社 イオン源

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS581954Y2 (ja) * 1977-10-18 1983-01-13 日新電機株式会社 イオン発生装置
JPS62272440A (ja) * 1986-05-21 1987-11-26 Mitsubishi Electric Corp イオン注入装置のイオン源
FR2616587B1 (fr) * 1987-06-12 1989-11-24 Realisations Nucleaires Et Source d'ions a quatre electrodes
JPH077640B2 (ja) * 1988-12-23 1995-01-30 日新電機株式会社 イオン源
JPH0574396A (ja) * 1991-09-18 1993-03-26 Hitachi Ltd ロードロツク機構をもつヒータ装置
JP3254819B2 (ja) * 1993-06-10 2002-02-12 石川島播磨重工業株式会社 イオン源装置
JPH07169427A (ja) * 1993-12-14 1995-07-04 Nissin Electric Co Ltd イオン源装置
JP3463896B2 (ja) * 1994-11-15 2003-11-05 理化学研究所 イオンビーム発生装置
JP3769444B2 (ja) * 1997-11-28 2006-04-26 セイコーエプソン株式会社 イオン注入装置
JP3518320B2 (ja) * 1998-02-27 2004-04-12 日新電機株式会社 イオン源およびそのフィラメント交換方法
JP2000001780A (ja) * 1998-06-17 2000-01-07 Japan Aviation Electronics Ind Ltd イオン発生装置
JP2006019048A (ja) * 2004-06-30 2006-01-19 Toshiba Corp イオン注入装置および半導体装置の製造方法
GB0505856D0 (en) * 2005-03-22 2005-04-27 Applied Materials Inc Cathode and counter-cathode arrangement in an ion source
JP2008234895A (ja) * 2007-03-19 2008-10-02 Ihi Corp イオン源及びそのフィラメント交換方法
JP2008246380A (ja) * 2007-03-30 2008-10-16 Ihi Corp 真空処理装置及びそのメンテナンス方法
JP5903864B2 (ja) * 2011-12-14 2016-04-13 セイコーエプソン株式会社 イオンミリング装置

Also Published As

Publication number Publication date
JP2016076322A (ja) 2016-05-12

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