JP6436199B2 - ダイシング・ダイボンディング一体型テープの製造方法 - Google Patents
ダイシング・ダイボンディング一体型テープの製造方法 Download PDFInfo
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- JP6436199B2 JP6436199B2 JP2017158841A JP2017158841A JP6436199B2 JP 6436199 B2 JP6436199 B2 JP 6436199B2 JP 2017158841 A JP2017158841 A JP 2017158841A JP 2017158841 A JP2017158841 A JP 2017158841A JP 6436199 B2 JP6436199 B2 JP 6436199B2
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- Prior art keywords
- adhesive layer
- meth
- hydroxy
- acrylate
- methyl
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- 238000000034 method Methods 0.000 claims description 75
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- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 22
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- 239000003431 cross linking reagent Substances 0.000 claims description 15
- 125000000524 functional group Chemical group 0.000 claims description 14
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- 238000002156 mixing Methods 0.000 description 4
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- 125000003566 oxetanyl group Chemical group 0.000 description 4
- RPQRDASANLAFCM-UHFFFAOYSA-N oxiran-2-ylmethyl prop-2-enoate Chemical compound C=CC(=O)OCC1CO1 RPQRDASANLAFCM-UHFFFAOYSA-N 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
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- 239000012956 1-hydroxycyclohexylphenyl-ketone Substances 0.000 description 3
- OZAIFHULBGXAKX-UHFFFAOYSA-N 2,2'-azo-bis-isobutyronitrile Substances N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 3
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
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- MQDJYUACMFCOFT-UHFFFAOYSA-N bis[2-(1-hydroxycyclohexyl)phenyl]methanone Chemical compound C=1C=CC=C(C(=O)C=2C(=CC=CC=2)C2(O)CCCCC2)C=1C1(O)CCCCC1 MQDJYUACMFCOFT-UHFFFAOYSA-N 0.000 description 3
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- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 3
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
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Description
(1)少なくとも基材層、粘着層、接着層がこの順で積層されたダイシング・ダイボンディング一体型テープにおいて、粘着層の紫外線照射前の表面自由エネルギーA、Aを極性成分と分散成分に分けたときの分散成分値A分散、粘着層の紫外線照射後の表面自由エネルギーBが、下記一般式(I)の関係を満たす、ダイシング・ダイボンディング一体型テープ。
A分散/[(B−A)/A]≦20・・・(I)
(2)基材層側から粘着層に照射される紫外線は、中心波長365nmにおける露光量が1000mJ/cm2以下である、(1)のダイシング・ダイボンディング一体型テープ。
(3)紫外線照射後に、粘着層と接着層とを剥離速度300mm/minのT字モードで剥離させたときの剥離モードが界面剥離モードである、(1)又は(2)のダイシング・ダイボンディング一体型テープ
(4)粘着層が、少なくとも放射線硬化性炭素−炭素二重結合含有基、水酸基を有するアクリル系共重合体(A)、光開始剤(B)、及び水酸基と反応しうる官能基を1分子中に2つ以上有する架橋剤(C)を含む、(1)〜(3)のいずれかのダイシング・ダイボンディング一体型テープ。
(5)接着層が、エポキシ基含有アクリル共重合体、エポキシ樹脂又はエポキシ樹脂硬化剤を含む(1)〜(4)のいずれかのダイシング・ダイボンディング一体型テープ。
ダイシング・ダイボンディング一体型テープ1は、半導体ウエハを半導体チップに個片化するダイシング用フィルムとしての機能と、個片化された半導体チップを支持基板に接続する際の接着層を半導体チップに付与する機能と、を一体的に有するフィルムである。
Y=(B−A)/A・・・(II)
0<X=(A分散)/Y≦20・・・(I)’
ダイシング・ダイボンディング一体型テープ1を製造する方法としては、フィルム状にした接着層30と、基材層10及び粘着層20を積層してなるダイシングテープとを張りあわせて製造する方法が挙げられる。例えば、接着層30の製造方法は、粘着層用の材料を溶液中に分散・混合・溶解し、塗布面が離型処理されたポリエステルフィルム、ポリアミドフィルム、ポリイミドフィルム、ポリアミドイミドフィルム、結晶性ポリオレフィンフィルム等の耐熱性を有するキャリアフィルム上に流延・塗布後、乾燥することで得られる。また、ダイシングテープの製造方法は、粘着層用の材料を溶液中に分散・混合・溶解し、塗布面が離型処理されたポリエステルフィルム、ポリアミドフィルム、ポリイミドフィルム、ポリアミドイミドフィルム、結晶性ポリオレフィンフィルム等の耐熱性を有するキャリアフィルム上に流延・塗布後、乾燥のち、基材層10とラミネートして粘着層20を基材層10上に転写することで作成することができる。その後、ダイシングテープのキャリアテープを剥がし、接着層30をラミネート後、キャリアフィルムを剥がすことでダイシング・ダイボンディング一体型テープ1を得ることができる。
次に、ダイシング・ダイボンディング一体型テープ1を用いて半導体装置(半導体パッケージ)を製造する方法について説明する。
先ず、ダイシング・ダイボンディング一体型テープ1を所定の装置に配置する。続いて、図2(a)及び(b)に示されるように、半導体ウエハWの主面Wsに、接着層30を介してダイシング・ダイボンディング一体型テープ1を貼り付ける。また、半導体ウエハWの回路面は、主面Wsとは反対側の面であることが好ましい。
次に、図2(c)に示されるように、半導体ウエハW、粘着層20及び接着層30をダイシングする。このとき、基材層10を途中までダイシングしてもよい。このように、ダイシング・ダイボンディング一体型テープ1は、ダイシングシートとしても機能する。
次に、図2(d)に示されるように、粘着層20に紫外線を照射することにより粘着層20を硬化させ、粘着層20と接着層30との間の接着力を低下させる。本実施形態においては、波長200〜400nmの紫外線を用いることが好ましく、その照射条件としては、照度:30〜240mW/cm2で照射量200〜500mJとなるように照射することが好ましい。
紫外線を照射した後、図2(e)に示されるように、基材層10をエキスパンドすることにより、切断により得られた各半導体素子50を互いに離間させつつ、接着層30側からニードル42で突き上げられた接着層付き半導体素子50を吸引コレット44で吸引してピックアップする。なお、接着層付き半導体素子50は、半導体素子Waと接着層30aとを有する。また、半導体素子Waは半導体ウエハWを分割して得られるものであり、接着層30aは接着層30を分割して得られるものである。ピックアップ工程では、必ずしもエキスパンドを行わなくてもよいが、エキスパンドすることによりピックアップ性をより向上させることができる。
粘着層付き半導体素子50をピックアップした後、図2(f)に示されるように、接着層付き半導体素子50を、熱圧着により、接着層30aを介して半導体素子搭載用の支持基板60に接着する。
スリーワンモータ、撹拌翼、窒素導入管が備え付けられた容量4000mlのオートクレーブに酢酸エチル1000g、2−エチルヘキシルアクリレートを650g、2−ヒドロキシエチルアクリレートを350g、アゾビスイソブチロニトリルを3.0gを配合し、均一になるまで撹拌後、流量100ml/minにて60分間バブリングを実施し、系中の溶存酸素を脱気した。その後、1時間かけて60℃まで昇温し、昇温後4時間重合させた。さらに、その後1時間かけて90℃まで昇温し、更に90℃にて1時間保持後、室温に冷却した。
上述記載の方法で得られた連鎖重合可能な二重結合を有するアクリル樹脂溶液を固形分として100g、架橋剤として多官能イソシアネート(日本ポリウレタン工業(株)製、コロネートL、固形分75%)を固形分として12.0g、光開始剤として1−ヒドロキシシクロヘキシルフェニルケトン(チバスペシャリティケミカルズ(株)製、イルガキュア184)を1.0g、更に総固形分含有量が27質量%となるように酢酸エチルを加え、10分間均一に撹拌してダイシングテープ用の粘着層用ワニスを得た。
エポキシ樹脂としてYDCN−703(東都化成(株)製商品名、クレゾールノボラック型エポキシ樹脂、エポキシ当量210、分子量1200、軟化点80℃)55重量部、フェノール樹脂としてミレックスXLC−LL(三井化学(株)製商品名、フェノール樹脂、水酸基当量175、吸水率1.8%、350℃における加熱重量減少率4%)45重量部、シランカップリング剤としてNUCA−189(日本ユニカー(株)製商品名、γ−メルカプトプロピルトリメトキシシラン)1.7重量部とNUCA−1160(日本ユニカー(株)製商品名、γ−ウレイドプロピルトリエトキシシラン)3.2重量部、フィラーとしてアエロジルR972(シリカ表面にジメチルジクロロシランを被覆し、400℃の反応器中で加水分解させた、メチル基などの有機基を表面に有するフィラー、日本アエロジル(株)製商品名、シリカ、平均粒径0.016μm)32重量部からなる組成物に、シクロヘキサノンを加えて撹拌混合し、更にビーズミルを用いて90分混練した。これにグリシジルアクリレート又はグリシジルメタクリレート3重量%を含むアクリルゴムHTR−860P−3(ナガセケムテックス(株)製商品名、重量平均分子量80万)を280重量部、及び硬化促進剤としてキュアゾール2PZ−CN(四国化成(株)製商品名、1−シアノエチル−2−フェニルイミダゾール)0.5重量部加え、攪拌混合し、真空脱気し、接着層用ワニスを得た。
前述記載の手法により得られたダイボンディングテープを、キャリアテープごと取扱いしやすいサイズにカットした。これにカバーテープを剥離したダイシングテープを室温で貼り付け後、4℃の冷蔵庫で1日保管しダイシング・ダイボンディング一体型テープを得た。
(株)オーク製作所製無電極紫外線ランプシステムを用いて、作成したサンプルに70mW/cm2モードで所定の照射量になるように照射時間を設定した。一体型フィルムの基材層側から紫外線(中心波長365nm)を照射して、紫外線照射後サンプルとした。
接触角計(協和界面化学(株)製:Drop Master300)を用いて、ダイシングテープに対する接触角θを23〜28℃の温度にて実測し、表面自由エネルギー(mN/m)等を算出した。接触角の測定条件としては、プローブの液適量は1.5μlとし、測定時間はプローブ溶液を滴下後5秒とした。測定は各10回ずつ行い、その平均値を求めた。プローブ溶液には、特性の異なる2種を用いることが理想ではあるが、今回は水とグリセリンの2種を用いた。得られた接触角はYoung-Dupreの式(III)を用いて、単純に連立方程式の解として、サンプルの分散項(分散成分値)及び極性項(極性成分値)、表面自由エネルギー(分散成分値と極性成分値の和)を算出した(Owens and Wendt法)。なお、本願記載の分散成分値は、固体表面自由エネルギー分散項にあたる。
紫外線照射前の表面自由エネルギーをA、紫外線照射後の表面自由エネルギーをB、紫外線照射前の表面自由エネルギーを極性成分と分散成分に分けた時の分散成分値をA分散とし、各サンプルのXを求めた。
X=A分散/[(B−A)/A]
T字ピール強度測定用のサンプルは、ダイシング・ダイボンディング一体型テープのうち粘着層側に支持テープを貼り合せ、幅25mm、長さ70-80mmのサイズに切り出したものを用いた。30分以上室温で保管し、紫外線照射前のサンプルとした。紫外線照射後のサンプルは、紫外線照射前サンプルを測定前に所定の強度で紫外線照射したものとした。
表面自由エネルギーは表面積と表面張力の積で表すことができるため、各サンプルの粘着層の紫外線照射前後における表面積の変化を、走査型プローブ顕微鏡を用いて調べた。ここで、紫外線照射前後で表面積に変化がなく、表面自由エネルギーの変化がある場合には、表面自由エネルギーの変化は物理的な変化によってもたらされていない、つまり、表面自由エネルギーの変化は表面張力の変化によるものであることを示す。ここで記載した走査型プローブ顕微鏡は、原子間力顕微鏡(AFM)等を示す。サンプルを1cm角以下にカットした後、ステージ用の金属板にカーボンテープで固定した。測定は、静電気の影響を受けやすいため、サンプルを一晩放置またはイオナイザーを用いて除電した後に行った。測定は、プローブを間欠的にサンプル表面に接触するダイナミック・フォース・モード(DFM)で行った。AFMを用いた表面形状の測定の場合には、DFMモードでの測定が望ましい。
Claims (4)
- 少なくとも基材層、粘着層、接着層がこの順で積層されたダイシング・ダイボンディング一体型テープの製造方法であって、
少なくとも基材層、粘着層、接着層がこの順で積層された積層体を用意し、前記粘着層の紫外線照射前の表面自由エネルギーA(単位:mN/m)、Aを極性成分と分散成分に分けた時の分散成分値A分散 (単位:mN/m)、及び前記粘着層の紫外線照射後の表面自由エネルギーB(単位:mN/m)が、下記一般式(I)の関係を満たすか否かを判定し、下記一般式(I)の関係を満たすものをダイシング・ダイボンディング一体型テープとすることを特徴とし、
前記粘着層が、少なくとも放射線硬化性炭素−炭素二重結合含有基、水酸基を有するアクリル系共重合体(A)、光開始剤(B)、及び水酸基と反応しうる官能基を1分子中に2つ以上有する架橋剤(C)を含む、ダイシング・ダイボンディング一体型テープの製造方法。
A分散/[(B−A)/A]≦12.44mN/m・・・(I) - 前記基材層側から前記粘着層に照射される紫外線は、中心波長365nmにおける露光量が1000mJ/cm2以下である、請求項1に記載のダイシング・ダイボンディング一体型テープの製造方法。
- 前記紫外線照射後に、前記粘着層と前記接着層とを剥離速度300mm/minのT字モードで剥離させたときの剥離モードが界面剥離モードである、請求項1又は2記載のダイシング・ダイボンディング一体型テープの製造方法。
- 前記接着層が、エポキシ基含有アクリル共重合体、エポキシ樹脂又はエポキシ樹脂硬化剤を含む、請求項1〜3のいずれか一項記載のダイシング・ダイボンディング一体型テープの製造方法。
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