JP6423214B2 - 低欠陥化学機械研磨組成物 - Google Patents

低欠陥化学機械研磨組成物 Download PDF

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Publication number
JP6423214B2
JP6423214B2 JP2014188645A JP2014188645A JP6423214B2 JP 6423214 B2 JP6423214 B2 JP 6423214B2 JP 2014188645 A JP2014188645 A JP 2014188645A JP 2014188645 A JP2014188645 A JP 2014188645A JP 6423214 B2 JP6423214 B2 JP 6423214B2
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Japan
Prior art keywords
chemical mechanical
mechanical polishing
polishing composition
formula
substrate
Prior art date
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Expired - Fee Related
Application number
JP2014188645A
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English (en)
Japanese (ja)
Other versions
JP2015063687A5 (https=
JP2015063687A (ja
Inventor
イ・グォ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials Holding Inc
Original Assignee
Rohm and Haas Electronic Materials CMP Holdings Inc
DuPont Electronic Materials Holding Inc
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Publication of JP2015063687A publication Critical patent/JP2015063687A/ja
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2014188645A 2013-09-18 2014-09-17 低欠陥化学機械研磨組成物 Expired - Fee Related JP6423214B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/030,126 2013-09-18
US14/030,126 US9012327B2 (en) 2013-09-18 2013-09-18 Low defect chemical mechanical polishing composition

Publications (3)

Publication Number Publication Date
JP2015063687A JP2015063687A (ja) 2015-04-09
JP2015063687A5 JP2015063687A5 (https=) 2017-10-12
JP6423214B2 true JP6423214B2 (ja) 2018-11-14

Family

ID=52580048

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014188645A Expired - Fee Related JP6423214B2 (ja) 2013-09-18 2014-09-17 低欠陥化学機械研磨組成物

Country Status (7)

Country Link
US (1) US9012327B2 (https=)
JP (1) JP6423214B2 (https=)
KR (1) KR102322420B1 (https=)
CN (1) CN104449396B (https=)
DE (1) DE102014013924A1 (https=)
FR (1) FR3010650B1 (https=)
TW (1) TWI636129B (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9293339B1 (en) * 2015-09-24 2016-03-22 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of polishing semiconductor substrate
US10138396B2 (en) 2015-09-30 2018-11-27 Fujimi Incorporated Polishing composition
JPWO2018012173A1 (ja) 2016-07-15 2019-05-30 株式会社フジミインコーポレーテッド 研磨用組成物、研磨用組成物の製造方法および研磨方法
US10894901B2 (en) 2016-07-15 2021-01-19 Fujimi Incorporated Method for producing polishing composition and polishing method
JP2019050307A (ja) * 2017-09-11 2019-03-28 株式会社フジミインコーポレーテッド 研磨方法、ならびに研磨用組成物およびその製造方法
CN112920716A (zh) * 2021-01-26 2021-06-08 中国科学院上海微系统与信息技术研究所 一种用于氮化钛化学机械抛光的组合物及其使用方法
CN116000782B (zh) * 2022-12-27 2023-09-19 昂士特科技(深圳)有限公司 用于金属合金cmp的化学机械抛光组合物

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5738800A (en) 1996-09-27 1998-04-14 Rodel, Inc. Composition and method for polishing a composite of silica and silicon nitride
FR2754937B1 (fr) * 1996-10-23 1999-01-15 Hoechst France Nouveau procede de polissage mecano-chimique de couches de materiaux isolants a base de derives du silicium ou de silicium
US6322600B1 (en) 1997-04-23 2001-11-27 Advanced Technology Materials, Inc. Planarization compositions and methods for removing interlayer dielectric films
DE10063491A1 (de) * 2000-12-20 2002-06-27 Bayer Ag Saure Polierslurry für das chemisch-mechanische Polieren von SiO¶2¶-Isolationsschichten
US7316603B2 (en) * 2002-01-22 2008-01-08 Cabot Microelectronics Corporation Compositions and methods for tantalum CMP
US7097541B2 (en) * 2002-01-22 2006-08-29 Cabot Microelectronics Corporation CMP method for noble metals
US6685757B2 (en) 2002-02-21 2004-02-03 Rodel Holdings, Inc. Polishing composition
US6803353B2 (en) 2002-11-12 2004-10-12 Atofina Chemicals, Inc. Copper chemical mechanical polishing solutions using sulfonated amphiprotic agents
TWI347969B (en) 2003-09-30 2011-09-01 Fujimi Inc Polishing composition
US20050189322A1 (en) * 2004-02-27 2005-09-01 Lane Sarah J. Compositions and methods for chemical mechanical polishing silica and silicon nitride
JP2006100538A (ja) * 2004-09-29 2006-04-13 Fuji Photo Film Co Ltd 研磨用組成物及びそれを用いた研磨方法
JP5147185B2 (ja) * 2005-01-24 2013-02-20 昭和電工株式会社 研磨組成物及び研磨方法
US20060205218A1 (en) 2005-03-09 2006-09-14 Mueller Brian L Compositions and methods for chemical mechanical polishing thin films and dielectric materials
JP2007088258A (ja) * 2005-09-22 2007-04-05 Fujifilm Corp 金属研磨液及びそれを用いる研磨方法
WO2007043517A1 (ja) * 2005-10-12 2007-04-19 Hitachi Chemical Co., Ltd. Ｃｍｐ用研磨液及び研磨方法
WO2007146680A1 (en) 2006-06-06 2007-12-21 Florida State University Research Foundation , Inc. Stabilized silica colloid
JP2009081200A (ja) * 2007-09-25 2009-04-16 Fujifilm Corp 研磨液
JP5441362B2 (ja) * 2008-05-30 2014-03-12 富士フイルム株式会社 研磨液及び研磨方法
JP5314329B2 (ja) 2008-06-12 2013-10-16 富士フイルム株式会社 研磨液
US8025813B2 (en) * 2009-11-12 2011-09-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and methods relating thereto
US8431490B2 (en) * 2010-03-31 2013-04-30 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of chemical mechanical polishing a substrate with polishing composition adapted to enhance silicon oxide removal
JP5673506B2 (ja) * 2011-11-18 2015-02-18 信越化学工業株式会社 合成石英ガラス基板用研磨剤及び合成石英ガラス基板の製造方法

Also Published As

Publication number Publication date
TWI636129B (zh) 2018-09-21
FR3010650B1 (fr) 2017-09-22
US9012327B2 (en) 2015-04-21
FR3010650A1 (fr) 2015-03-20
CN104449396B (zh) 2016-08-17
US20150079788A1 (en) 2015-03-19
CN104449396A (zh) 2015-03-25
KR102322420B1 (ko) 2021-11-04
KR20150032495A (ko) 2015-03-26
TW201525117A (zh) 2015-07-01
JP2015063687A (ja) 2015-04-09
DE102014013924A1 (de) 2015-03-19

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