DE102014013924A1 - Chemisch-mechanische Polierzusammensetzung mit geringer Defekterzeugung - Google Patents

Chemisch-mechanische Polierzusammensetzung mit geringer Defekterzeugung Download PDF

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Publication number
DE102014013924A1
DE102014013924A1 DE201410013924 DE102014013924A DE102014013924A1 DE 102014013924 A1 DE102014013924 A1 DE 102014013924A1 DE 201410013924 DE201410013924 DE 201410013924 DE 102014013924 A DE102014013924 A DE 102014013924A DE 102014013924 A1 DE102014013924 A1 DE 102014013924A1
Authority
DE
Germany
Prior art keywords
mechanical polishing
chemical mechanical
polishing composition
chemical
formula
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE201410013924
Other languages
German (de)
English (en)
Inventor
Yi Guo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials Holding Inc
DuPont Electronic Materials International LLC
Original Assignee
Rohm and Haas Electronic Materials CMP Holdings Inc
Rohm and Haas Electronic Materials LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm and Haas Electronic Materials CMP Holdings Inc, Rohm and Haas Electronic Materials LLC filed Critical Rohm and Haas Electronic Materials CMP Holdings Inc
Publication of DE102014013924A1 publication Critical patent/DE102014013924A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
DE201410013924 2013-09-18 2014-09-18 Chemisch-mechanische Polierzusammensetzung mit geringer Defekterzeugung Withdrawn DE102014013924A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/030,126 2013-09-18
US14/030,126 US9012327B2 (en) 2013-09-18 2013-09-18 Low defect chemical mechanical polishing composition

Publications (1)

Publication Number Publication Date
DE102014013924A1 true DE102014013924A1 (de) 2015-03-19

Family

ID=52580048

Family Applications (1)

Application Number Title Priority Date Filing Date
DE201410013924 Withdrawn DE102014013924A1 (de) 2013-09-18 2014-09-18 Chemisch-mechanische Polierzusammensetzung mit geringer Defekterzeugung

Country Status (7)

Country Link
US (1) US9012327B2 (https=)
JP (1) JP6423214B2 (https=)
KR (1) KR102322420B1 (https=)
CN (1) CN104449396B (https=)
DE (1) DE102014013924A1 (https=)
FR (1) FR3010650B1 (https=)
TW (1) TWI636129B (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9293339B1 (en) * 2015-09-24 2016-03-22 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of polishing semiconductor substrate
US10138396B2 (en) 2015-09-30 2018-11-27 Fujimi Incorporated Polishing composition
JPWO2018012173A1 (ja) 2016-07-15 2019-05-30 株式会社フジミインコーポレーテッド 研磨用組成物、研磨用組成物の製造方法および研磨方法
US10894901B2 (en) 2016-07-15 2021-01-19 Fujimi Incorporated Method for producing polishing composition and polishing method
JP2019050307A (ja) * 2017-09-11 2019-03-28 株式会社フジミインコーポレーテッド 研磨方法、ならびに研磨用組成物およびその製造方法
CN112920716A (zh) * 2021-01-26 2021-06-08 中国科学院上海微系统与信息技术研究所 一种用于氮化钛化学机械抛光的组合物及其使用方法
CN116000782B (zh) * 2022-12-27 2023-09-19 昂士特科技(深圳)有限公司 用于金属合金cmp的化学机械抛光组合物

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6322600B1 (en) 1997-04-23 2001-11-27 Advanced Technology Materials, Inc. Planarization compositions and methods for removing interlayer dielectric films

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5738800A (en) 1996-09-27 1998-04-14 Rodel, Inc. Composition and method for polishing a composite of silica and silicon nitride
FR2754937B1 (fr) * 1996-10-23 1999-01-15 Hoechst France Nouveau procede de polissage mecano-chimique de couches de materiaux isolants a base de derives du silicium ou de silicium
DE10063491A1 (de) * 2000-12-20 2002-06-27 Bayer Ag Saure Polierslurry für das chemisch-mechanische Polieren von SiO¶2¶-Isolationsschichten
US7316603B2 (en) * 2002-01-22 2008-01-08 Cabot Microelectronics Corporation Compositions and methods for tantalum CMP
US7097541B2 (en) * 2002-01-22 2006-08-29 Cabot Microelectronics Corporation CMP method for noble metals
US6685757B2 (en) 2002-02-21 2004-02-03 Rodel Holdings, Inc. Polishing composition
US6803353B2 (en) 2002-11-12 2004-10-12 Atofina Chemicals, Inc. Copper chemical mechanical polishing solutions using sulfonated amphiprotic agents
TWI347969B (en) 2003-09-30 2011-09-01 Fujimi Inc Polishing composition
US20050189322A1 (en) * 2004-02-27 2005-09-01 Lane Sarah J. Compositions and methods for chemical mechanical polishing silica and silicon nitride
JP2006100538A (ja) * 2004-09-29 2006-04-13 Fuji Photo Film Co Ltd 研磨用組成物及びそれを用いた研磨方法
JP5147185B2 (ja) * 2005-01-24 2013-02-20 昭和電工株式会社 研磨組成物及び研磨方法
US20060205218A1 (en) 2005-03-09 2006-09-14 Mueller Brian L Compositions and methods for chemical mechanical polishing thin films and dielectric materials
JP2007088258A (ja) * 2005-09-22 2007-04-05 Fujifilm Corp 金属研磨液及びそれを用いる研磨方法
WO2007043517A1 (ja) * 2005-10-12 2007-04-19 Hitachi Chemical Co., Ltd. Ｃｍｐ用研磨液及び研磨方法
WO2007146680A1 (en) 2006-06-06 2007-12-21 Florida State University Research Foundation , Inc. Stabilized silica colloid
JP2009081200A (ja) * 2007-09-25 2009-04-16 Fujifilm Corp 研磨液
JP5441362B2 (ja) * 2008-05-30 2014-03-12 富士フイルム株式会社 研磨液及び研磨方法
JP5314329B2 (ja) 2008-06-12 2013-10-16 富士フイルム株式会社 研磨液
US8025813B2 (en) * 2009-11-12 2011-09-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and methods relating thereto
US8431490B2 (en) * 2010-03-31 2013-04-30 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of chemical mechanical polishing a substrate with polishing composition adapted to enhance silicon oxide removal
JP5673506B2 (ja) * 2011-11-18 2015-02-18 信越化学工業株式会社 合成石英ガラス基板用研磨剤及び合成石英ガラス基板の製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6322600B1 (en) 1997-04-23 2001-11-27 Advanced Technology Materials, Inc. Planarization compositions and methods for removing interlayer dielectric films

Also Published As

Publication number Publication date
TWI636129B (zh) 2018-09-21
FR3010650B1 (fr) 2017-09-22
US9012327B2 (en) 2015-04-21
FR3010650A1 (fr) 2015-03-20
CN104449396B (zh) 2016-08-17
US20150079788A1 (en) 2015-03-19
CN104449396A (zh) 2015-03-25
KR102322420B1 (ko) 2021-11-04
KR20150032495A (ko) 2015-03-26
TW201525117A (zh) 2015-07-01
JP2015063687A (ja) 2015-04-09
JP6423214B2 (ja) 2018-11-14

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R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee