CN104449396B - 低缺陷化学机械抛光组合物 - Google Patents

低缺陷化学机械抛光组合物 Download PDF

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Publication number
CN104449396B
CN104449396B CN201410478499.7A CN201410478499A CN104449396B CN 104449396 B CN104449396 B CN 104449396B CN 201410478499 A CN201410478499 A CN 201410478499A CN 104449396 B CN104449396 B CN 104449396B
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CN
China
Prior art keywords
chemical mechanical
mechanical polishing
polishing composition
substrate
silicon oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CN201410478499.7A
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English (en)
Chinese (zh)
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CN104449396A (zh
Inventor
郭毅
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ROHM AND HAAS ELECTRONIC MATER
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ROHM AND HAAS ELECTRONIC MATER
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Publication of CN104449396A publication Critical patent/CN104449396A/zh
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CN201410478499.7A 2013-09-18 2014-09-18 低缺陷化学机械抛光组合物 Expired - Fee Related CN104449396B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/030,126 2013-09-18
US14/030,126 US9012327B2 (en) 2013-09-18 2013-09-18 Low defect chemical mechanical polishing composition

Publications (2)

Publication Number Publication Date
CN104449396A CN104449396A (zh) 2015-03-25
CN104449396B true CN104449396B (zh) 2016-08-17

Family

ID=52580048

Family Applications (1)

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CN201410478499.7A Expired - Fee Related CN104449396B (zh) 2013-09-18 2014-09-18 低缺陷化学机械抛光组合物

Country Status (7)

Country Link
US (1) US9012327B2 (https=)
JP (1) JP6423214B2 (https=)
KR (1) KR102322420B1 (https=)
CN (1) CN104449396B (https=)
DE (1) DE102014013924A1 (https=)
FR (1) FR3010650B1 (https=)
TW (1) TWI636129B (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9293339B1 (en) * 2015-09-24 2016-03-22 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of polishing semiconductor substrate
US10138396B2 (en) 2015-09-30 2018-11-27 Fujimi Incorporated Polishing composition
JPWO2018012173A1 (ja) 2016-07-15 2019-05-30 株式会社フジミインコーポレーテッド 研磨用組成物、研磨用組成物の製造方法および研磨方法
US10894901B2 (en) 2016-07-15 2021-01-19 Fujimi Incorporated Method for producing polishing composition and polishing method
JP2019050307A (ja) * 2017-09-11 2019-03-28 株式会社フジミインコーポレーテッド 研磨方法、ならびに研磨用組成物およびその製造方法
CN112920716A (zh) * 2021-01-26 2021-06-08 中国科学院上海微系统与信息技术研究所 一种用于氮化钛化学机械抛光的组合物及其使用方法
CN116000782B (zh) * 2022-12-27 2023-09-19 昂士特科技(深圳)有限公司 用于金属合金cmp的化学机械抛光组合物

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6043159A (en) * 1996-10-23 2000-03-28 Clariant Chimie S.A. Chemical mechanical polishing process for layers of isolating materials based on silicon derivatives or silicon
CN102061132A (zh) * 2009-11-12 2011-05-18 罗门哈斯电子材料Cmp控股股份有限公司 化学机械抛光组合物及其相关方法

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Publication number Priority date Publication date Assignee Title
US5738800A (en) 1996-09-27 1998-04-14 Rodel, Inc. Composition and method for polishing a composite of silica and silicon nitride
US6322600B1 (en) 1997-04-23 2001-11-27 Advanced Technology Materials, Inc. Planarization compositions and methods for removing interlayer dielectric films
DE10063491A1 (de) * 2000-12-20 2002-06-27 Bayer Ag Saure Polierslurry für das chemisch-mechanische Polieren von SiO¶2¶-Isolationsschichten
US7316603B2 (en) * 2002-01-22 2008-01-08 Cabot Microelectronics Corporation Compositions and methods for tantalum CMP
US7097541B2 (en) * 2002-01-22 2006-08-29 Cabot Microelectronics Corporation CMP method for noble metals
US6685757B2 (en) 2002-02-21 2004-02-03 Rodel Holdings, Inc. Polishing composition
US6803353B2 (en) 2002-11-12 2004-10-12 Atofina Chemicals, Inc. Copper chemical mechanical polishing solutions using sulfonated amphiprotic agents
TWI347969B (en) 2003-09-30 2011-09-01 Fujimi Inc Polishing composition
US20050189322A1 (en) * 2004-02-27 2005-09-01 Lane Sarah J. Compositions and methods for chemical mechanical polishing silica and silicon nitride
JP2006100538A (ja) * 2004-09-29 2006-04-13 Fuji Photo Film Co Ltd 研磨用組成物及びそれを用いた研磨方法
JP5147185B2 (ja) * 2005-01-24 2013-02-20 昭和電工株式会社 研磨組成物及び研磨方法
US20060205218A1 (en) 2005-03-09 2006-09-14 Mueller Brian L Compositions and methods for chemical mechanical polishing thin films and dielectric materials
JP2007088258A (ja) * 2005-09-22 2007-04-05 Fujifilm Corp 金属研磨液及びそれを用いる研磨方法
WO2007043517A1 (ja) * 2005-10-12 2007-04-19 Hitachi Chemical Co., Ltd. Ｃｍｐ用研磨液及び研磨方法
WO2007146680A1 (en) 2006-06-06 2007-12-21 Florida State University Research Foundation , Inc. Stabilized silica colloid
JP2009081200A (ja) * 2007-09-25 2009-04-16 Fujifilm Corp 研磨液
JP5441362B2 (ja) * 2008-05-30 2014-03-12 富士フイルム株式会社 研磨液及び研磨方法
JP5314329B2 (ja) 2008-06-12 2013-10-16 富士フイルム株式会社 研磨液
US8431490B2 (en) * 2010-03-31 2013-04-30 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of chemical mechanical polishing a substrate with polishing composition adapted to enhance silicon oxide removal
JP5673506B2 (ja) * 2011-11-18 2015-02-18 信越化学工業株式会社 合成石英ガラス基板用研磨剤及び合成石英ガラス基板の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6043159A (en) * 1996-10-23 2000-03-28 Clariant Chimie S.A. Chemical mechanical polishing process for layers of isolating materials based on silicon derivatives or silicon
CN102061132A (zh) * 2009-11-12 2011-05-18 罗门哈斯电子材料Cmp控股股份有限公司 化学机械抛光组合物及其相关方法

Also Published As

Publication number Publication date
TWI636129B (zh) 2018-09-21
FR3010650B1 (fr) 2017-09-22
US9012327B2 (en) 2015-04-21
FR3010650A1 (fr) 2015-03-20
US20150079788A1 (en) 2015-03-19
CN104449396A (zh) 2015-03-25
KR102322420B1 (ko) 2021-11-04
KR20150032495A (ko) 2015-03-26
TW201525117A (zh) 2015-07-01
JP2015063687A (ja) 2015-04-09
DE102014013924A1 (de) 2015-03-19
JP6423214B2 (ja) 2018-11-14

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Granted publication date: 20160817