JP6418603B2 - 反射型露光マスクの製造方法およびマスクパターン作製プログラム - Google Patents
反射型露光マスクの製造方法およびマスクパターン作製プログラム Download PDFInfo
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- JP6418603B2 JP6418603B2 JP2015051706A JP2015051706A JP6418603B2 JP 6418603 B2 JP6418603 B2 JP 6418603B2 JP 2015051706 A JP2015051706 A JP 2015051706A JP 2015051706 A JP2015051706 A JP 2015051706A JP 6418603 B2 JP6418603 B2 JP 6418603B2
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- mask
- reflectance
- reflection spectrum
- exposure
- pattern
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- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 238000001228 spectrum Methods 0.000 claims description 58
- 230000003287 optical effect Effects 0.000 claims description 16
- 238000009826 distribution Methods 0.000 claims description 15
- 230000031700 light absorption Effects 0.000 claims description 3
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 description 13
- 238000012937 correction Methods 0.000 description 11
- 238000013461 design Methods 0.000 description 9
- 239000000758 substrate Substances 0.000 description 7
- 238000010894 electron beam technology Methods 0.000 description 6
- 238000005286 illumination Methods 0.000 description 6
- 238000002310 reflectometry Methods 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Description
図6(c)は、マスクブランク3の表面における反射率のピーク値の分布を例示している。横軸および縦軸は、マスクブランク3の中心を原点とした座標を示している。
図6(b)および(c)に示すように、マスクブランク3の反射率のピーク値および中心波長λCは、その表面において分布している。また、中心波長λCの分布と反射率のピーク値の分布とは、必ずしも一致しないことが分かる。
Claims (3)
- 反射層の表面における複数の領域のそれぞれにおいて反射スペクトルを測定し、
前記複数の領域のそれぞれにおいて、露光光学系の反射スペクトルと、前記反射スペクトルと、に基づいた到達反射率を算出し、
前記到達反射率の分布に基づいて、前記複数の領域に形成される光吸収部のパターンの寸法を補正する反射型露光マスクの製造方法。 - 前記複数の領域のそれぞれに形成される前記光吸収部のパターンに対し、MEEF値を算出し、
前記MEEF値に基づいて前記光吸収部のパターンの寸法を補正する請求項1記載の反射型露光マスクの製造方法。 - 反射層の表面における複数の領域のそれぞれにおいて測定された反射スペクトルと、露光光学系の反射スペクトルと、に基づいた到達反射率を算出するステップと、
前記複数の領域のそれぞれに形成されるマスクパターンのMEEF値を算出するステップと、
前記複数の領域のそれぞれにおいて、前記到達反射率および前記MEEF値に基づいて、前記マスクパターンの寸法を補正するステップと、をコンピュータに実行させるマスクパターン作製プログラム。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015051706A JP6418603B2 (ja) | 2015-03-16 | 2015-03-16 | 反射型露光マスクの製造方法およびマスクパターン作製プログラム |
US14/844,469 US9841667B2 (en) | 2015-03-16 | 2015-09-03 | Reflective photomask, method for manufacturing same and program for making mask pattern |
Applications Claiming Priority (1)
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JP2015051706A JP6418603B2 (ja) | 2015-03-16 | 2015-03-16 | 反射型露光マスクの製造方法およびマスクパターン作製プログラム |
Publications (2)
Publication Number | Publication Date |
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JP2016170366A JP2016170366A (ja) | 2016-09-23 |
JP6418603B2 true JP6418603B2 (ja) | 2018-11-07 |
Family
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JP2015051706A Active JP6418603B2 (ja) | 2015-03-16 | 2015-03-16 | 反射型露光マスクの製造方法およびマスクパターン作製プログラム |
Country Status (2)
Country | Link |
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US (1) | US9841667B2 (ja) |
JP (1) | JP6418603B2 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI712849B (zh) | 2017-02-17 | 2020-12-11 | 聯華電子股份有限公司 | 一種極紫外線光罩 |
JP6998181B2 (ja) * | 2017-11-14 | 2022-02-04 | アルバック成膜株式会社 | マスクブランク、位相シフトマスクおよびその製造方法 |
KR102374206B1 (ko) | 2017-12-05 | 2022-03-14 | 삼성전자주식회사 | 반도체 장치 제조 방법 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1152540A (ja) | 1997-08-07 | 1999-02-26 | Sony Corp | フォトマスクパターンの設計方法 |
JP2001057328A (ja) * | 1999-08-18 | 2001-02-27 | Nikon Corp | 反射マスク、露光装置および集積回路の製造方法 |
JP2003158056A (ja) | 2001-11-21 | 2003-05-30 | Tokyo Electron Ltd | パターン形成システム |
JP2004054092A (ja) | 2002-07-23 | 2004-02-19 | Elpida Memory Inc | マスクおよびその製造方法 |
JP2005340553A (ja) * | 2004-05-28 | 2005-12-08 | Sony Corp | 露光用マスク |
US7177010B2 (en) | 2004-11-03 | 2007-02-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP4923923B2 (ja) * | 2006-09-28 | 2012-04-25 | 凸版印刷株式会社 | 極端紫外線露光用マスクおよびそれを用いた半導体集積回路製造方法 |
JP5350594B2 (ja) * | 2007-02-05 | 2013-11-27 | 株式会社東芝 | Euvマスクの製造方法及びそのマスクを用いた半導体装置の製造方法 |
JP5541159B2 (ja) * | 2008-07-14 | 2014-07-09 | 旭硝子株式会社 | Euvリソグラフィ用反射型マスクブランク、および、euvリソグラフィ用反射型マスク |
DE102011075579A1 (de) * | 2011-05-10 | 2012-11-15 | Carl Zeiss Smt Gmbh | Spiegel und Projektionsbelichtungsanlage für die Mikrolithographie mit einem solchen Spiegel |
JP2013062433A (ja) * | 2011-09-14 | 2013-04-04 | Toshiba Corp | パターン生成方法、パターン形成方法およびパターン生成プログラム |
US9377696B2 (en) * | 2013-10-07 | 2016-06-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Extreme ultraviolet lithography process and mask |
-
2015
- 2015-03-16 JP JP2015051706A patent/JP6418603B2/ja active Active
- 2015-09-03 US US14/844,469 patent/US9841667B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20160274452A1 (en) | 2016-09-22 |
US9841667B2 (en) | 2017-12-12 |
JP2016170366A (ja) | 2016-09-23 |
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