JP6405767B2 - 窒化ガリウム基板 - Google Patents

窒化ガリウム基板 Download PDF

Info

Publication number
JP6405767B2
JP6405767B2 JP2014150845A JP2014150845A JP6405767B2 JP 6405767 B2 JP6405767 B2 JP 6405767B2 JP 2014150845 A JP2014150845 A JP 2014150845A JP 2014150845 A JP2014150845 A JP 2014150845A JP 6405767 B2 JP6405767 B2 JP 6405767B2
Authority
JP
Japan
Prior art keywords
region
substrate
gan substrate
gallium nitride
gan
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2014150845A
Other languages
English (en)
Japanese (ja)
Other versions
JP2016023123A5 (enExample
JP2016023123A (ja
Inventor
木山　誠
誠 木山
龍 弘田
龍 弘田
成二 中畑
成二 中畑
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP2014150845A priority Critical patent/JP6405767B2/ja
Priority to CN201580039559.8A priority patent/CN106536794B/zh
Priority to US15/319,076 priority patent/US10458043B2/en
Priority to PCT/JP2015/061197 priority patent/WO2016013259A1/ja
Publication of JP2016023123A publication Critical patent/JP2016023123A/ja
Publication of JP2016023123A5 publication Critical patent/JP2016023123A5/ja
Application granted granted Critical
Publication of JP6405767B2 publication Critical patent/JP6405767B2/ja
Priority to US16/571,599 priority patent/US10837124B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/64—Flat crystals, e.g. plates, strips or discs

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2014150845A 2014-07-24 2014-07-24 窒化ガリウム基板 Active JP6405767B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2014150845A JP6405767B2 (ja) 2014-07-24 2014-07-24 窒化ガリウム基板
CN201580039559.8A CN106536794B (zh) 2014-07-24 2015-04-10 氮化镓衬底
US15/319,076 US10458043B2 (en) 2014-07-24 2015-04-10 Gallium nitride substrate
PCT/JP2015/061197 WO2016013259A1 (ja) 2014-07-24 2015-04-10 窒化ガリウム基板
US16/571,599 US10837124B2 (en) 2014-07-24 2019-09-16 Gallium nitride substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014150845A JP6405767B2 (ja) 2014-07-24 2014-07-24 窒化ガリウム基板

Publications (3)

Publication Number Publication Date
JP2016023123A JP2016023123A (ja) 2016-02-08
JP2016023123A5 JP2016023123A5 (enExample) 2017-05-18
JP6405767B2 true JP6405767B2 (ja) 2018-10-17

Family

ID=55162798

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014150845A Active JP6405767B2 (ja) 2014-07-24 2014-07-24 窒化ガリウム基板

Country Status (4)

Country Link
US (2) US10458043B2 (enExample)
JP (1) JP6405767B2 (enExample)
CN (1) CN106536794B (enExample)
WO (1) WO2016013259A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112023000380T5 (de) 2022-02-17 2024-09-05 Ngk Insulators, Ltd. Halbleitersubstrat von einem Nitrid eines Elements der Gruppe III und gebondetes Substrat

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11767612B2 (en) 2017-09-22 2023-09-26 Tokuyama Corporation Group III nitride single crystal substrate
US11133179B2 (en) * 2019-11-27 2021-09-28 Samsung Electronics Co., Ltd. Thin-film structure and method of manufacturing the same
CN112397571B (zh) * 2021-01-18 2021-04-23 苏州纳维科技有限公司 一种氮化镓衬底及半导体复合衬底
JP7150199B1 (ja) * 2021-06-30 2022-10-07 京セラ株式会社 窒化ガリウム単結晶基板の製造方法および周期表第１３族元素窒化物単結晶基板の製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3801125B2 (ja) * 2001-10-09 2006-07-26 住友電気工業株式会社 単結晶窒化ガリウム基板と単結晶窒化ガリウムの結晶成長方法および単結晶窒化ガリウム基板の製造方法
JP4380264B2 (ja) * 2003-08-25 2009-12-09 カシオ計算機株式会社 接合基板及び基板の接合方法
JP4182935B2 (ja) * 2004-08-25 2008-11-19 住友電気工業株式会社 窒化ガリウムの結晶成長方法および窒化ガリウム基板の製造方法
JP2005322944A (ja) * 2005-07-08 2005-11-17 Sharp Corp 窒化ガリウム系半導体発光素子の評価方法および製造方法
JP4386031B2 (ja) * 2005-12-26 2009-12-16 住友電気工業株式会社 半導体デバイスの製造方法および窒化ガリウム結晶基板の識別方法
JP2010180081A (ja) 2009-02-04 2010-08-19 Sumitomo Electric Ind Ltd ＧａＮ基板およびその製造方法、ＧａＮ層接合基板の製造方法、ならびに半導体デバイスの製造方法
JP5544875B2 (ja) * 2009-12-25 2014-07-09 住友電気工業株式会社 複合基板
US20130029472A1 (en) * 2011-07-26 2013-01-31 Samsung Corning Precision Materials Co., Ltd. GaN BONDED SUBSTRATE AND METHOD OF MANUFACTURING GaN BONDED SUBSTRATE
JP2015044707A (ja) 2013-08-28 2015-03-12 住友電気工業株式会社 窒化ガリウム基板および半導体デバイス

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112023000380T5 (de) 2022-02-17 2024-09-05 Ngk Insulators, Ltd. Halbleitersubstrat von einem Nitrid eines Elements der Gruppe III und gebondetes Substrat

Also Published As

Publication number Publication date
US20170137966A1 (en) 2017-05-18
US10837124B2 (en) 2020-11-17
US10458043B2 (en) 2019-10-29
US20200032419A1 (en) 2020-01-30
CN106536794A (zh) 2017-03-22
JP2016023123A (ja) 2016-02-08
WO2016013259A1 (ja) 2016-01-28
CN106536794B (zh) 2020-07-14

Similar Documents

Publication Publication Date Title
JP5552627B2 (ja) エピタキシャル成長用内部改質基板及びそれを用いて作製される結晶成膜体、デバイス、バルク基板及びそれらの製造方法
US7790489B2 (en) III-V group nitride system semiconductor self-standing substrate, method of making the same and III-V group nitride system semiconductor wafer
JP5218047B2 (ja) 窒化ガリウム結晶を作製する方法および窒化ガリウムウエハ
JP4741572B2 (ja) 窒化物半導体基板及びその製造方法
JP4691911B2 (ja) Ｉｉｉ−ｖ族窒化物系半導体自立基板の製造方法
US10837124B2 (en) Gallium nitride substrate
US9105472B2 (en) Single-crystal substrate,single-crystal substrate having crystalline film,crystalline film,method for producing single-crystal substrate having crystalline film,method for producing crystalline substrate,and method for producing element
JP6212203B2 (ja) 窒化物半導体単結晶基板の製造方法
US11873578B2 (en) Method for manufacturing nitride semiconductor substrate and nitride semiconductor substrate
JP2017522721A (ja) 半極性ｉｉｉ族窒化物層を含む半導体材料の製造方法
JP4930081B2 (ja) ＧａＮ結晶基板
WO2016136547A1 (ja) Ｃ面ＧａＮ基板
WO2016136548A1 (ja) 窒化物半導体テンプレート及びその製造方法、並びにエピタキシャルウエハ
JP2015018960A (ja) 半導体装置の製造方法
CN113366159B (zh) 氮化物半导体基板、层叠结构体和氮化物半导体基板的制造方法
WO2013058352A1 (ja) Ｉｉｉ族窒化物半導体結晶
JP6669157B2 (ja) Ｃ面ＧａＮ基板
US10006147B2 (en) Gallium nitride substrate
JP5120285B2 (ja) Ｉｉｉ−ｖ族窒化物系半導体自立基板の製造方法
JP6346457B2 (ja) 窒化ガリウム結晶自立基板の製造方法
JP4888377B2 (ja) 窒化物半導体自立基板
JP5182396B2 (ja) 窒化物半導体自立基板及び発光装置
JP2011211046A (ja) 窒化物半導体自立基板
JP2011140428A (ja) 窒化物系化合物半導体基板の製造方法及び窒化物系化合物半導体自立基板
JP2011157275A (ja) ＧａＮ結晶基板

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20170223

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170329

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20180123

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20180313

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20180821

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20180903

R150 Certificate of patent or registration of utility model

Ref document number: 6405767

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250