JP2016023123A5 - - Google Patents
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- Publication number
- JP2016023123A5 JP2016023123A5 JP2014150845A JP2014150845A JP2016023123A5 JP 2016023123 A5 JP2016023123 A5 JP 2016023123A5 JP 2014150845 A JP2014150845 A JP 2014150845A JP 2014150845 A JP2014150845 A JP 2014150845A JP 2016023123 A5 JP2016023123 A5 JP 2016023123A5
- Authority
- JP
- Japan
- Prior art keywords
- gallium nitride
- nitride substrate
- region
- less
- difference
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims description 13
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 12
- 229910002601 GaN Inorganic materials 0.000 claims description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 238000005259 measurement Methods 0.000 claims 4
- 238000001069 Raman spectroscopy Methods 0.000 claims 2
- 238000013507 mapping Methods 0.000 claims 2
- 230000002093 peripheral effect Effects 0.000 claims 1
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014150845A JP6405767B2 (ja) | 2014-07-24 | 2014-07-24 | 窒化ガリウム基板 |
| CN201580039559.8A CN106536794B (zh) | 2014-07-24 | 2015-04-10 | 氮化镓衬底 |
| PCT/JP2015/061197 WO2016013259A1 (ja) | 2014-07-24 | 2015-04-10 | 窒化ガリウム基板 |
| US15/319,076 US10458043B2 (en) | 2014-07-24 | 2015-04-10 | Gallium nitride substrate |
| US16/571,599 US10837124B2 (en) | 2014-07-24 | 2019-09-16 | Gallium nitride substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014150845A JP6405767B2 (ja) | 2014-07-24 | 2014-07-24 | 窒化ガリウム基板 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016023123A JP2016023123A (ja) | 2016-02-08 |
| JP2016023123A5 true JP2016023123A5 (enExample) | 2017-05-18 |
| JP6405767B2 JP6405767B2 (ja) | 2018-10-17 |
Family
ID=55162798
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014150845A Active JP6405767B2 (ja) | 2014-07-24 | 2014-07-24 | 窒化ガリウム基板 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US10458043B2 (enExample) |
| JP (1) | JP6405767B2 (enExample) |
| CN (1) | CN106536794B (enExample) |
| WO (1) | WO2016013259A1 (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3686323B1 (en) | 2017-09-22 | 2024-07-31 | Tokuyama Corporation | Group iii nitride single crystal substrate |
| US11133179B2 (en) * | 2019-11-27 | 2021-09-28 | Samsung Electronics Co., Ltd. | Thin-film structure and method of manufacturing the same |
| CN112397571B (zh) | 2021-01-18 | 2021-04-23 | 苏州纳维科技有限公司 | 一种氮化镓衬底及半导体复合衬底 |
| WO2023276036A1 (ja) * | 2021-06-30 | 2023-01-05 | 京セラ株式会社 | 窒化ガリウム単結晶基板の製造方法および周期表第１３族元素窒化物単結晶基板の製造方法 |
| DE112023000380T5 (de) | 2022-02-17 | 2024-09-05 | Ngk Insulators, Ltd. | Halbleitersubstrat von einem Nitrid eines Elements der Gruppe III und gebondetes Substrat |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3801125B2 (ja) * | 2001-10-09 | 2006-07-26 | 住友電気工業株式会社 | 単結晶窒化ガリウム基板と単結晶窒化ガリウムの結晶成長方法および単結晶窒化ガリウム基板の製造方法 |
| JP4380264B2 (ja) * | 2003-08-25 | 2009-12-09 | カシオ計算機株式会社 | 接合基板及び基板の接合方法 |
| JP4182935B2 (ja) * | 2004-08-25 | 2008-11-19 | 住友電気工業株式会社 | 窒化ガリウムの結晶成長方法および窒化ガリウム基板の製造方法 |
| JP2005322944A (ja) * | 2005-07-08 | 2005-11-17 | Sharp Corp | 窒化ガリウム系半導体発光素子の評価方法および製造方法 |
| JP4386031B2 (ja) * | 2005-12-26 | 2009-12-16 | 住友電気工業株式会社 | 半導体デバイスの製造方法および窒化ガリウム結晶基板の識別方法 |
| JP2010180081A (ja) * | 2009-02-04 | 2010-08-19 | Sumitomo Electric Ind Ltd | ＧａＮ基板およびその製造方法、ＧａＮ層接合基板の製造方法、ならびに半導体デバイスの製造方法 |
| JP5544875B2 (ja) * | 2009-12-25 | 2014-07-09 | 住友電気工業株式会社 | 複合基板 |
| US20130029472A1 (en) * | 2011-07-26 | 2013-01-31 | Samsung Corning Precision Materials Co., Ltd. | GaN BONDED SUBSTRATE AND METHOD OF MANUFACTURING GaN BONDED SUBSTRATE |
| JP2015044707A (ja) * | 2013-08-28 | 2015-03-12 | 住友電気工業株式会社 | 窒化ガリウム基板および半導体デバイス |
-
2014
- 2014-07-24 JP JP2014150845A patent/JP6405767B2/ja active Active
-
2015
- 2015-04-10 WO PCT/JP2015/061197 patent/WO2016013259A1/ja not_active Ceased
- 2015-04-10 CN CN201580039559.8A patent/CN106536794B/zh active Active
- 2015-04-10 US US15/319,076 patent/US10458043B2/en active Active
-
2019
- 2019-09-16 US US16/571,599 patent/US10837124B2/en active Active
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