CN106536794B - 氮化镓衬底 - Google Patents

氮化镓衬底 Download PDF

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Publication number
CN106536794B
CN106536794B CN201580039559.8A CN201580039559A CN106536794B CN 106536794 B CN106536794 B CN 106536794B CN 201580039559 A CN201580039559 A CN 201580039559A CN 106536794 B CN106536794 B CN 106536794B
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gan substrate
gan
substrate
experimental example
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Chinese (zh)
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CN106536794A (zh
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木山诚
弘田龙
中畑成二
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Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/64—Flat crystals, e.g. plates, strips or discs

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN201580039559.8A 2014-07-24 2015-04-10 氮化镓衬底 Active CN106536794B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2014-150845 2014-07-24
JP2014150845A JP6405767B2 (ja) 2014-07-24 2014-07-24 窒化ガリウム基板
PCT/JP2015/061197 WO2016013259A1 (ja) 2014-07-24 2015-04-10 窒化ガリウム基板

Publications (2)

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CN106536794A CN106536794A (zh) 2017-03-22
CN106536794B true CN106536794B (zh) 2020-07-14

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CN201580039559.8A Active CN106536794B (zh) 2014-07-24 2015-04-10 氮化镓衬底

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US (2) US10458043B2 (enExample)
JP (1) JP6405767B2 (enExample)
CN (1) CN106536794B (enExample)
WO (1) WO2016013259A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3686323B1 (en) * 2017-09-22 2024-07-31 Tokuyama Corporation Group iii nitride single crystal substrate
US11133179B2 (en) * 2019-11-27 2021-09-28 Samsung Electronics Co., Ltd. Thin-film structure and method of manufacturing the same
CN112397571B (zh) 2021-01-18 2021-04-23 苏州纳维科技有限公司 一种氮化镓衬底及半导体复合衬底
US12290899B2 (en) * 2021-06-30 2025-05-06 Kyocera Corporation Method of manufacturing gallium nitride single-crystal substrate and method of manufacturing single-crystal substrate of nitride of group 13 element in periodic table
CN118660995A (zh) 2022-02-17 2024-09-17 日本碍子株式会社 Iii族元素氮化物半导体基板及贴合基板

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005322944A (ja) * 2005-07-08 2005-11-17 Sharp Corp 窒化ガリウム系半導体発光素子の評価方法および製造方法
CN1744944A (zh) * 2003-08-25 2006-03-08 卡西欧计算机株式会社 接合衬底以及使得衬底结合在一起的方法
US20070145376A1 (en) * 2005-12-26 2007-06-28 Sumitomo Electric Industries, Ltd. Gallium Nitride Crystal Substrate, Semiconductor Device, Method of Manufacturing Semiconductor Device, and Method of Identifying Gallium Nitride Crystal Substrate
US20080202409A1 (en) * 2001-10-01 2008-08-28 Sumitomo Electric Industries, Ltd. Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate
JP2011135019A (ja) * 2009-12-25 2011-07-07 Sumitomo Electric Ind Ltd 複合基板
CN102308032A (zh) * 2009-02-04 2012-01-04 住友电气工业株式会社 GaN衬底、制造GaN衬底的方法、制造接合有GaN层的衬底的方法和制造半导体器件的方法
US20130029472A1 (en) * 2011-07-26 2013-01-31 Samsung Corning Precision Materials Co., Ltd. GaN BONDED SUBSTRATE AND METHOD OF MANUFACTURING GaN BONDED SUBSTRATE

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4182935B2 (ja) * 2004-08-25 2008-11-19 住友電気工業株式会社 窒化ガリウムの結晶成長方法および窒化ガリウム基板の製造方法
JP2015044707A (ja) * 2013-08-28 2015-03-12 住友電気工業株式会社 窒化ガリウム基板および半導体デバイス

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080202409A1 (en) * 2001-10-01 2008-08-28 Sumitomo Electric Industries, Ltd. Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate
CN1744944A (zh) * 2003-08-25 2006-03-08 卡西欧计算机株式会社 接合衬底以及使得衬底结合在一起的方法
JP2005322944A (ja) * 2005-07-08 2005-11-17 Sharp Corp 窒化ガリウム系半導体発光素子の評価方法および製造方法
US20070145376A1 (en) * 2005-12-26 2007-06-28 Sumitomo Electric Industries, Ltd. Gallium Nitride Crystal Substrate, Semiconductor Device, Method of Manufacturing Semiconductor Device, and Method of Identifying Gallium Nitride Crystal Substrate
CN102308032A (zh) * 2009-02-04 2012-01-04 住友电气工业株式会社 GaN衬底、制造GaN衬底的方法、制造接合有GaN层的衬底的方法和制造半导体器件的方法
JP2011135019A (ja) * 2009-12-25 2011-07-07 Sumitomo Electric Ind Ltd 複合基板
US20130029472A1 (en) * 2011-07-26 2013-01-31 Samsung Corning Precision Materials Co., Ltd. GaN BONDED SUBSTRATE AND METHOD OF MANUFACTURING GaN BONDED SUBSTRATE

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Development of GaN substrate;kensaku MOTOKI;《SEI Technical Review》;20090731(第175期);第10-18页 *

Also Published As

Publication number Publication date
CN106536794A (zh) 2017-03-22
WO2016013259A1 (ja) 2016-01-28
JP2016023123A (ja) 2016-02-08
US10837124B2 (en) 2020-11-17
US10458043B2 (en) 2019-10-29
US20170137966A1 (en) 2017-05-18
JP6405767B2 (ja) 2018-10-17
US20200032419A1 (en) 2020-01-30

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