JP6401027B2 - 二層グラフェントンネル電界効果トランジスタ - Google Patents

二層グラフェントンネル電界効果トランジスタ Download PDF

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Publication number
JP6401027B2
JP6401027B2 JP2014239027A JP2014239027A JP6401027B2 JP 6401027 B2 JP6401027 B2 JP 6401027B2 JP 2014239027 A JP2014239027 A JP 2014239027A JP 2014239027 A JP2014239027 A JP 2014239027A JP 6401027 B2 JP6401027 B2 JP 6401027B2
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Prior art keywords
gate electrode
graphene
layer
upper gate
dielectric layer
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Japanese (ja)
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JP2015119178A (ja
JP2015119178A5 (enExample
Inventor
アミールハサン・ノウルバクシュ
バルト・ソレ
マルク・ヘインス
タルン・クマール・アガルワル
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Katholieke Universiteit Leuven
Interuniversitair Microelektronica Centrum vzw IMEC
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Katholieke Universiteit Leuven
Interuniversitair Microelektronica Centrum vzw IMEC
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Publication of JP2015119178A5 publication Critical patent/JP2015119178A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/881—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being a two-dimensional material
    • H10D62/882—Graphene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile

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  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
JP2014239027A 2013-12-18 2014-11-26 二層グラフェントンネル電界効果トランジスタ Active JP6401027B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
EP13197942 2013-12-18
EP13197942.9 2013-12-18
EP14154114.4 2014-02-06
EP14154114.4A EP2887398B1 (en) 2013-12-18 2014-02-06 A bilayer graphene tunneling field effect transistor

Publications (3)

Publication Number Publication Date
JP2015119178A JP2015119178A (ja) 2015-06-25
JP2015119178A5 JP2015119178A5 (enExample) 2017-12-07
JP6401027B2 true JP6401027B2 (ja) 2018-10-03

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JP2014239027A Active JP6401027B2 (ja) 2013-12-18 2014-11-26 二層グラフェントンネル電界効果トランジスタ

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US (1) US9293536B2 (enExample)
EP (1) EP2887398B1 (enExample)
JP (1) JP6401027B2 (enExample)

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US9812604B2 (en) * 2014-05-30 2017-11-07 Klaus Y. J. Hsu Photosensing device with graphene
US11121334B2 (en) * 2014-06-26 2021-09-14 Trustees Of Tufts College 3D graphene transistor
US9721982B2 (en) * 2015-03-27 2017-08-01 Ecole Polytechnique Federale De Lausanne (Epfl) One transistor active pixel sensor with tunnel FET
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KR102434697B1 (ko) * 2015-06-02 2022-08-22 삼성전자주식회사 2d 물질을 포함하는 광학소자 및 그 제조방법
US9741796B2 (en) * 2015-09-20 2017-08-22 National Tsing Hua University Graphene-based valley filter and method for operating the same
CN105547158B (zh) * 2015-12-04 2018-02-27 厦门大学 一种基于超材料红外光谱的纳米位移传感器及其检测方法
EP3185303A1 (en) * 2015-12-22 2017-06-28 IMEC vzw A two-dimensional material semiconductor device
CN108463889B (zh) 2016-03-31 2020-11-06 华为技术有限公司 场效应管及其制造方法
JP6792141B2 (ja) * 2016-06-23 2020-11-25 富士通株式会社 ガスセンサ及びその使用方法
WO2018051739A1 (ja) * 2016-09-13 2018-03-22 ソニー株式会社 電磁波検出素子、電磁波センサ、電子機器及び構造体
JP6791723B2 (ja) * 2016-11-07 2020-11-25 住友電気工業株式会社 半導体装置
CN106595897B (zh) * 2016-11-15 2018-11-16 湖南理工学院 隧道效应超灵敏度电磁控制恒温系统
KR102651544B1 (ko) * 2016-11-21 2024-03-28 삼성전자주식회사 광대역 다기능 광학소자와 그 제조 및 동작방법
JP2018098338A (ja) 2016-12-13 2018-06-21 ソニーセミコンダクタソリューションズ株式会社 トンネル電界効果トランジスタ
JP6851804B2 (ja) * 2016-12-14 2021-03-31 住友電気工業株式会社 半導体装置
US10608085B2 (en) 2016-12-23 2020-03-31 Imec Vzw Two dimensional field effect transistors
JP6538893B2 (ja) * 2017-01-20 2019-07-03 ツィンファ ユニバーシティ 薄膜トランジスタ
US11145772B2 (en) * 2019-03-11 2021-10-12 At&T Intellectual Property I, L.P. Device for photo spectroscopy having an atomic-scale bilayer
US11888034B2 (en) * 2019-06-07 2024-01-30 Intel Corporation Transistors with metal chalcogenide channel materials
US11171243B2 (en) 2019-06-27 2021-11-09 Intel Corporation Transistor structures with a metal oxide contact buffer
US11777029B2 (en) 2019-06-27 2023-10-03 Intel Corporation Vertical transistors for ultra-dense logic and memory applications
CN110854192B (zh) * 2019-11-18 2021-05-04 中国科学院上海微系统与信息技术研究所 一种隧穿场效应晶体管及其制备方法
EP3982420A1 (en) * 2020-10-08 2022-04-13 Imec VZW Dynamically doped field-effect transistor and a method for controlling such
US12266720B2 (en) 2020-12-21 2025-04-01 Intel Corporation Transistors with monocrystalline metal chalcogenide channel materials
US12446253B2 (en) * 2022-09-19 2025-10-14 Globalfoundries U.S. Inc. Field effect transistor with adjustable effective gate length
KR102727888B1 (ko) * 2022-11-16 2024-11-07 한양대학교 산학협력단 터널링 전계 효과 트랜지스터
WO2025198675A1 (en) * 2023-12-04 2025-09-25 Ohio State Innovation Foundation Methods of modular construction of 0d-state tunnel junction devices and methods of use thereof

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JPH0590586A (ja) * 1991-09-30 1993-04-09 Nec Corp 薄膜トランジスタ
JP2004343018A (ja) * 2003-03-20 2004-12-02 Fujitsu Ltd 半導体装置及びその製造方法
JP2010135471A (ja) * 2008-12-03 2010-06-17 Fujitsu Ltd 両極特性電界効果型トランジスタ及び半導体集積回路装置
KR101694877B1 (ko) * 2009-10-16 2017-01-11 삼성전자주식회사 그라핀 소자 및 그 제조 방법
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JPWO2013121954A1 (ja) * 2012-02-16 2015-05-11 国立大学法人東北大学 グラフェン電界効果トランジスタおよびグラフェン半導体部材

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Publication number Publication date
US9293536B2 (en) 2016-03-22
EP2887398A1 (en) 2015-06-24
US20150171167A1 (en) 2015-06-18
JP2015119178A (ja) 2015-06-25
EP2887398B1 (en) 2017-09-13

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