JP2015119178A5 - - Google Patents

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Publication number
JP2015119178A5
JP2015119178A5 JP2014239027A JP2014239027A JP2015119178A5 JP 2015119178 A5 JP2015119178 A5 JP 2015119178A5 JP 2014239027 A JP2014239027 A JP 2014239027A JP 2014239027 A JP2014239027 A JP 2014239027A JP 2015119178 A5 JP2015119178 A5 JP 2015119178A5
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JP
Japan
Prior art keywords
gate electrode
graphene
layer
upper gate
dielectric layer
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JP2014239027A
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English (en)
Japanese (ja)
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JP6401027B2 (ja
JP2015119178A (ja
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Priority claimed from EP14154114.4A external-priority patent/EP2887398B1/en
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Publication of JP2015119178A5 publication Critical patent/JP2015119178A5/ja
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Publication of JP6401027B2 publication Critical patent/JP6401027B2/ja
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JP2014239027A 2013-12-18 2014-11-26 二層グラフェントンネル電界効果トランジスタ Active JP6401027B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
EP13197942 2013-12-18
EP13197942.9 2013-12-18
EP14154114.4 2014-02-06
EP14154114.4A EP2887398B1 (en) 2013-12-18 2014-02-06 A bilayer graphene tunneling field effect transistor

Publications (3)

Publication Number Publication Date
JP2015119178A JP2015119178A (ja) 2015-06-25
JP2015119178A5 true JP2015119178A5 (enExample) 2017-12-07
JP6401027B2 JP6401027B2 (ja) 2018-10-03

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JP2014239027A Active JP6401027B2 (ja) 2013-12-18 2014-11-26 二層グラフェントンネル電界効果トランジスタ

Country Status (3)

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US (1) US9293536B2 (enExample)
EP (1) EP2887398B1 (enExample)
JP (1) JP6401027B2 (enExample)

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JP5927826B2 (ja) * 2011-09-28 2016-06-01 日産自動車株式会社 非接触給電装置
CN104508945B (zh) 2012-07-30 2016-09-07 日产自动车株式会社 非接触供电装置
KR101430650B1 (ko) * 2013-01-11 2014-08-19 경희대학교 산학협력단 광검출 소자
US9812604B2 (en) * 2014-05-30 2017-11-07 Klaus Y. J. Hsu Photosensing device with graphene
US11121334B2 (en) * 2014-06-26 2021-09-14 Trustees Of Tufts College 3D graphene transistor
US9721982B2 (en) * 2015-03-27 2017-08-01 Ecole Polytechnique Federale De Lausanne (Epfl) One transistor active pixel sensor with tunnel FET
KR102335772B1 (ko) * 2015-04-07 2021-12-06 삼성전자주식회사 측면 게이트와 2차원 물질 채널을 포함하는 전자소자와 그 제조방법
KR102434697B1 (ko) * 2015-06-02 2022-08-22 삼성전자주식회사 2d 물질을 포함하는 광학소자 및 그 제조방법
US9741796B2 (en) * 2015-09-20 2017-08-22 National Tsing Hua University Graphene-based valley filter and method for operating the same
CN105547158B (zh) * 2015-12-04 2018-02-27 厦门大学 一种基于超材料红外光谱的纳米位移传感器及其检测方法
EP3185303A1 (en) * 2015-12-22 2017-06-28 IMEC vzw A two-dimensional material semiconductor device
CN108463889B (zh) 2016-03-31 2020-11-06 华为技术有限公司 场效应管及其制造方法
JP6792141B2 (ja) * 2016-06-23 2020-11-25 富士通株式会社 ガスセンサ及びその使用方法
WO2018051739A1 (ja) * 2016-09-13 2018-03-22 ソニー株式会社 電磁波検出素子、電磁波センサ、電子機器及び構造体
JP6791723B2 (ja) * 2016-11-07 2020-11-25 住友電気工業株式会社 半導体装置
CN106595897B (zh) * 2016-11-15 2018-11-16 湖南理工学院 隧道效应超灵敏度电磁控制恒温系统
KR102651544B1 (ko) * 2016-11-21 2024-03-28 삼성전자주식회사 광대역 다기능 광학소자와 그 제조 및 동작방법
JP2018098338A (ja) 2016-12-13 2018-06-21 ソニーセミコンダクタソリューションズ株式会社 トンネル電界効果トランジスタ
JP6851804B2 (ja) * 2016-12-14 2021-03-31 住友電気工業株式会社 半導体装置
US10608085B2 (en) 2016-12-23 2020-03-31 Imec Vzw Two dimensional field effect transistors
JP6538893B2 (ja) * 2017-01-20 2019-07-03 ツィンファ ユニバーシティ 薄膜トランジスタ
US11145772B2 (en) * 2019-03-11 2021-10-12 At&T Intellectual Property I, L.P. Device for photo spectroscopy having an atomic-scale bilayer
US11888034B2 (en) * 2019-06-07 2024-01-30 Intel Corporation Transistors with metal chalcogenide channel materials
US11171243B2 (en) 2019-06-27 2021-11-09 Intel Corporation Transistor structures with a metal oxide contact buffer
US11777029B2 (en) 2019-06-27 2023-10-03 Intel Corporation Vertical transistors for ultra-dense logic and memory applications
CN110854192B (zh) * 2019-11-18 2021-05-04 中国科学院上海微系统与信息技术研究所 一种隧穿场效应晶体管及其制备方法
EP3982420A1 (en) * 2020-10-08 2022-04-13 Imec VZW Dynamically doped field-effect transistor and a method for controlling such
US12266720B2 (en) 2020-12-21 2025-04-01 Intel Corporation Transistors with monocrystalline metal chalcogenide channel materials
US12446253B2 (en) * 2022-09-19 2025-10-14 Globalfoundries U.S. Inc. Field effect transistor with adjustable effective gate length
KR102727888B1 (ko) * 2022-11-16 2024-11-07 한양대학교 산학협력단 터널링 전계 효과 트랜지스터
WO2025198675A1 (en) * 2023-12-04 2025-09-25 Ohio State Innovation Foundation Methods of modular construction of 0d-state tunnel junction devices and methods of use thereof

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JPH0590586A (ja) * 1991-09-30 1993-04-09 Nec Corp 薄膜トランジスタ
JP2004343018A (ja) * 2003-03-20 2004-12-02 Fujitsu Ltd 半導体装置及びその製造方法
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GB2506558B (en) * 2011-07-22 2015-09-02 Ibm Tunnel field-effect transistor
EP2568506A1 (en) * 2011-09-09 2013-03-13 Imec Tunnel transistor, logical gate comprising the transistor, static random-access memory using the logical gate and method for making such a tunnel transistor
JPWO2013121954A1 (ja) * 2012-02-16 2015-05-11 国立大学法人東北大学 グラフェン電界効果トランジスタおよびグラフェン半導体部材

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