JP6399889B2 - 反射光学素子 - Google Patents

反射光学素子 Download PDF

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Publication number
JP6399889B2
JP6399889B2 JP2014215733A JP2014215733A JP6399889B2 JP 6399889 B2 JP6399889 B2 JP 6399889B2 JP 2014215733 A JP2014215733 A JP 2014215733A JP 2014215733 A JP2014215733 A JP 2014215733A JP 6399889 B2 JP6399889 B2 JP 6399889B2
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Prior art keywords
layer
optical element
reflective
reflective optical
deformation
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Japanese (ja)
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JP2015122480A (ja
JP2015122480A5 (enExample
Inventor
ビトナー ボリス
ビトナー ボリス
ワブラ ノルベルト
ワブラ ノルベルト
シュナイダー ソニヤ
シュナイダー ソニヤ
シュナイダー リカルダ
シュナイダー リカルダ
ワーグナー ヘンドリク
ワーグナー ヘンドリク
イリエフ ルーメン
イリエフ ルーメン
パウルス ヴァルター
パウルス ヴァルター
Original Assignee
カール・ツァイス・エスエムティー・ゲーエムベーハー
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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
    • G02B7/18—Mountings, adjusting means, or light-tight connections, for optical elements for prisms; for mirrors
    • G02B7/181—Mountings, adjusting means, or light-tight connections, for optical elements for prisms; for mirrors with means for compensating for changes in temperature or for controlling the temperature; thermal stabilisation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/52—Reflectors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70316—Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891—Temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G21K1/062—Devices having a multilayer structure
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/06—Illumination; Optics
    • G01N2201/063—Illuminating optical parts
    • G01N2201/0636—Reflectors
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K2201/00—Arrangements for handling radiation or particles
    • G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
    • G21K2201/067—Construction details

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Optics & Photonics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Toxicology (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Atmospheric Sciences (AREA)
  • Biochemistry (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
JP2014215733A 2013-10-30 2014-10-22 反射光学素子 Active JP6399889B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102013222140 2013-10-30
DE102013222140.1 2013-10-30

Publications (3)

Publication Number Publication Date
JP2015122480A JP2015122480A (ja) 2015-07-02
JP2015122480A5 JP2015122480A5 (enExample) 2017-11-24
JP6399889B2 true JP6399889B2 (ja) 2018-10-03

Family

ID=52811980

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014215733A Active JP6399889B2 (ja) 2013-10-30 2014-10-22 反射光学素子

Country Status (3)

Country Link
US (1) US9470872B2 (enExample)
JP (1) JP6399889B2 (enExample)
DE (1) DE102014219755A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015213253A1 (de) 2015-07-15 2017-01-19 Carl Zeiss Smt Gmbh Spiegel, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage
DE102015225509A1 (de) 2015-12-16 2017-06-22 Carl Zeiss Smt Gmbh Reflektives optisches Element
DE102016210794A1 (de) * 2016-06-16 2017-04-27 Carl Zeiss Smt Gmbh Optische Anordnung, EUV-Lithographieanlage und Verfahren zum Betrieb der optischen Anordnung
DE102017205405A1 (de) * 2017-03-30 2018-10-04 Carl Zeiss Smt Gmbh Spiegel, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage
DE102018203241A1 (de) 2018-03-05 2019-09-05 Carl Zeiss Smt Gmbh Optisches Element, sowie Verfahren zur Korrektur der Wellenfrontwirkung eines optischen Elements
DE102020201774A1 (de) 2020-02-13 2021-08-19 Carl Zeiss Smt Gmbh Optische Baugruppe mit Kompensationselement und Projektionsbelichtungsanlage
CN112713499A (zh) * 2020-12-30 2021-04-27 武汉光谷航天三江激光产业技术研究院有限公司 光学元件散热装置及方法
CN115145108B (zh) * 2022-09-05 2022-12-02 上海传芯半导体有限公司 Euv级衬底、euv掩模基版、euv掩模版及其制造方法
DE102024203044A1 (de) * 2024-04-03 2025-10-09 Carl Zeiss Smt Gmbh Verfahren zum Verbessern einer Abbildungsqualität einer Anordnung optischer Elemente und entsprechende Anordnung optischer Elemente
CN118519245A (zh) * 2024-05-30 2024-08-20 中国科学院合肥物质科学研究院 一种基于结构补偿的卡式望远镜消热差的装置及方法

Family Cites Families (25)

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JPH10163091A (ja) * 1996-11-29 1998-06-19 Canon Inc Ｘ線露光用マスク構造体およびｘ線露光装置
DE19903807A1 (de) 1998-05-05 1999-11-11 Zeiss Carl Fa Beleuchtungssystem insbesondere für die EUV-Lithographie
JPH11329918A (ja) * 1998-05-08 1999-11-30 Nikon Corp 軟ｘ線投影露光装置
JPH11326598A (ja) * 1998-05-08 1999-11-26 Nikon Corp 反射鏡およびその製造方法
JP3989367B2 (ja) * 2002-02-22 2007-10-10 Ｈｏｙａ株式会社 露光用反射型マスクブランク、その製造方法及び露光用反射型マスク
JP3870118B2 (ja) * 2002-04-05 2007-01-17 キヤノン株式会社 結像光学系、該光学系を有する露光装置、収差低減方法
DE10220816A1 (de) 2002-05-10 2003-11-20 Zeiss Carl Microelectronic Sys Reflektives Röntgenmikroskop und Inspektionssystem zur Untersuchung von Objekten mit Wellenlängen 100 nm
EP1455365A3 (de) 2002-05-10 2014-12-17 Carl Zeiss SMS GmbH Reflektives Röntgenmikroskop und Inspektionssystem zur Untersuchung von Objekten mit Wellenlängen 100nm
JP4024596B2 (ja) * 2002-06-03 2007-12-19 三菱電機株式会社 光学機器用反射鏡およびその製造方法
DE10335982A1 (de) 2003-08-06 2005-03-03 Zounek, Alexis Dr. Verfahren und Vorrichtung zur Überprüfung der Abbildungseigenschaften von Fotomasken
JP4817844B2 (ja) * 2003-09-27 2011-11-16 カール・ツァイス・エスエムティー・ゲーエムベーハー ゼロ転移温度周辺の熱膨張係数に応じて温度の上昇に対する傾きの符号が異なる材料で構成されたミラーを備えたｅｕｖ投影レンズ
JP2006332153A (ja) * 2005-05-24 2006-12-07 Hoya Corp 反射型マスクブランク及び反射型マスク並びに半導体装置の製造方法
US20080266651A1 (en) 2007-04-24 2008-10-30 Katsuhiko Murakami Optical apparatus, multilayer-film reflective mirror, exposure apparatus, and device
DE102009041405B4 (de) 2009-09-14 2020-08-20 Carl Zeiss Smt Gmbh Maskeninspektionsmikroskop mit variabler Beleuchtungseinstellung
DE102010028488A1 (de) * 2010-05-03 2011-11-03 Carl Zeiss Smt Gmbh Substrate für Spiegel für die EUV-Lithographie und deren Herstellung
JP5096530B2 (ja) * 2010-07-26 2012-12-12 カール・ツァイス・エスエムティー・ゲーエムベーハー ゼロ転移温度周辺の熱膨張係数に応じて温度の上昇に対する傾きの符号が異なる材料で構成されたミラーを備えたｅｕｖ投影レンズ
DE102011079933A1 (de) * 2010-08-19 2012-02-23 Carl Zeiss Smt Gmbh Optisches Element für die UV- oder EUV-Lithographie
DE102010039930A1 (de) * 2010-08-30 2012-03-01 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage
WO2012041697A1 (en) * 2010-09-27 2012-04-05 Carl Zeiss Smt Gmbh Mirror, projection objective comprising such a mirror, and projection exposure apparatus for microlithography comprising such a projection objective
DE102011080052A1 (de) * 2011-07-28 2013-01-31 Carl Zeiss Smt Gmbh Spiegel, optisches System mit Spiegel und Verfahren zur Herstellung eines Spiegels
DE102012205181B4 (de) 2012-03-30 2015-09-24 Carl Zeiss Smt Gmbh Messvorrichtung zum Vermessen einer Beleuchtungseigenschaft
DE102012212757A1 (de) 2012-07-20 2014-01-23 Carl Zeiss Smt Gmbh Verfahren zum betreiben einer mikrolithographischen projektionsbelichtungsanlage
DE102012212898A1 (de) 2012-07-24 2014-01-30 Carl Zeiss Smt Gmbh Spiegelanordnung für eine EUV-Projektionsbelichtungsanlage, Verfahren zum Betreiben derselben, sowie EUV-Projektionsbelichtungsanlage
JP5173059B2 (ja) * 2012-09-11 2013-03-27 株式会社東芝 記憶媒体、再生方法、記録方法、再生装置及び記録装置
WO2014139543A1 (en) 2013-03-13 2014-09-18 Carl Zeiss Smt Gmbh Microlithographic apparatus

Also Published As

Publication number Publication date
US9470872B2 (en) 2016-10-18
US20150116703A1 (en) 2015-04-30
JP2015122480A (ja) 2015-07-02
DE102014219755A1 (de) 2015-04-30

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