JP6382832B2 - 電子音響変換器 - Google Patents
電子音響変換器 Download PDFInfo
- Publication number
- JP6382832B2 JP6382832B2 JP2015545704A JP2015545704A JP6382832B2 JP 6382832 B2 JP6382832 B2 JP 6382832B2 JP 2015545704 A JP2015545704 A JP 2015545704A JP 2015545704 A JP2015545704 A JP 2015545704A JP 6382832 B2 JP6382832 B2 JP 6382832B2
- Authority
- JP
- Japan
- Prior art keywords
- piezoelectric layer
- electroacoustic transducer
- electric field
- electrode
- alternating electric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R17/00—Piezoelectric transducers; Electrostrictive transducers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
- B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
- B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
- B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
- B06B1/06—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02228—Guided bulk acoustic wave devices or Lamb wave devices having interdigital transducers situated in parallel planes on either side of a piezoelectric layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
- H10N30/202—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using longitudinal or thickness displacement combined with bending, shear or torsion displacement
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
- H10N30/206—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using only longitudinal or thickness displacement, e.g. d33 or d31 type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
- H10N30/208—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using shear or torsion displacement, e.g. d15 type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/852—Composite materials, e.g. having 1-3 or 2-2 type connectivity
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
- H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
- H03H2009/241—Bulk-mode MEMS resonators
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
- Materials Engineering (AREA)
- Signal Processing (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Piezo-Electric Transducers For Audible Bands (AREA)
- Transducers For Ultrasonic Waves (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102012111889.2A DE102012111889B9 (de) | 2012-12-06 | 2012-12-06 | Elektroakustischer Wandler |
| DE102012111889.2 | 2012-12-06 | ||
| PCT/EP2013/071425 WO2014086524A2 (de) | 2012-12-06 | 2013-10-14 | Elektroakustischer wandler |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016506130A JP2016506130A (ja) | 2016-02-25 |
| JP2016506130A5 JP2016506130A5 (enExample) | 2018-07-26 |
| JP6382832B2 true JP6382832B2 (ja) | 2018-08-29 |
Family
ID=49378278
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015545704A Active JP6382832B2 (ja) | 2012-12-06 | 2013-10-14 | 電子音響変換器 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9497551B2 (enExample) |
| JP (1) | JP6382832B2 (enExample) |
| CN (1) | CN104838588B (enExample) |
| DE (1) | DE102012111889B9 (enExample) |
| WO (1) | WO2014086524A2 (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102014111993B4 (de) * | 2014-08-21 | 2017-12-21 | Snaptrack, Inc. | Mikroakustische Bauelement mit verbesserter Temperaturkompensation |
| DE102014112372B3 (de) * | 2014-08-28 | 2016-02-25 | Epcos Ag | Filterchip und Verfahren zur Herstellung eines Filterchips |
| JP6233527B2 (ja) * | 2014-10-06 | 2017-11-22 | 株式会社村田製作所 | ラダー型フィルタ及びデュプレクサ |
| DE102016100925B4 (de) * | 2016-01-20 | 2018-05-30 | Snaptrack, Inc. | Filterschaltung |
| JP6265578B1 (ja) * | 2016-09-07 | 2018-01-24 | 株式会社アルバック | デバイス及びデバイスの製造方法並びにアレイ型の超音波プローブの製造方法 |
| WO2018056908A1 (en) * | 2016-09-26 | 2018-03-29 | Agency For Science, Technology And Research | Piezoelectric resonator and method of forming the same |
| CN107026627A (zh) * | 2016-12-12 | 2017-08-08 | 佛山市艾佛光通科技有限公司 | 垂直阵列纳米柱薄膜体声波谐振器及其制备方法和滤波器 |
| JP2019165307A (ja) * | 2018-03-19 | 2019-09-26 | 京セラ株式会社 | 超音波センサ |
| WO2020029153A1 (zh) * | 2018-08-09 | 2020-02-13 | 天津大学 | 基于兰姆波谐振器的粒子聚集器及其操作方法 |
| CN110113026B (zh) * | 2019-05-22 | 2021-04-02 | 武汉敏声新技术有限公司 | 一种二维兰姆波谐振器 |
| US12426506B2 (en) | 2019-07-19 | 2025-09-23 | Evatec Ag | Piezoelectric coating and deposition process |
| CN110995194B (zh) * | 2019-12-30 | 2021-12-17 | 武汉敏声新技术有限公司 | 一种二维高性能谐振器 |
| KR102763470B1 (ko) * | 2019-12-16 | 2025-02-05 | 엘지디스플레이 주식회사 | 표시장치 |
| CN112995863A (zh) * | 2021-03-15 | 2021-06-18 | 东莞市瑞勤电子有限公司 | 平面弯曲发声型扬声器、mems微扬声器和制作方法 |
| US20230099440A1 (en) * | 2021-09-28 | 2023-03-30 | Skyworks Global Pte. Ltd. | Piezoelectric mems device with thermal compensation from different material properties |
| CN114301412B (zh) * | 2021-12-29 | 2024-04-30 | 苏州达波新材科技有限公司 | 具有改良衬底结构的兰姆波声波器件及其制作方法 |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2405472A (en) * | 1934-06-12 | 1946-08-06 | Gen Radio Co | Diaphragm |
| US3423543A (en) * | 1965-06-24 | 1969-01-21 | Harry W Kompanek | Loudspeaker with piezoelectric wafer driving elements |
| US4843275A (en) * | 1988-01-19 | 1989-06-27 | Pennwalt Corporation | Air buoyant piezoelectric polymeric film microphone |
| JP3288815B2 (ja) | 1993-06-30 | 2002-06-04 | 株式会社東芝 | 2次元アレイ超音波プローブ |
| US5684884A (en) | 1994-05-31 | 1997-11-04 | Hitachi Metals, Ltd. | Piezoelectric loudspeaker and a method for manufacturing the same |
| JPH07327297A (ja) * | 1994-05-31 | 1995-12-12 | Hitachi Metals Ltd | 圧電スピーカ |
| JP3428803B2 (ja) * | 1996-03-06 | 2003-07-22 | 松下電器産業株式会社 | 加速度センサ及びその製造方法 |
| US5684883A (en) | 1996-11-26 | 1997-11-04 | E Lead Electronic Co., Ltd. | Device for receiving earphone/microphone wire of holdfree hand set |
| JP2004088056A (ja) | 2002-07-02 | 2004-03-18 | Sumitomo Electric Ind Ltd | 圧電振動子とその実装方法、実装デバイス、それを用いた超音波プローブ、およびそれを用いた3次元超音波診断装置 |
| US7109642B2 (en) * | 2003-11-29 | 2006-09-19 | Walter Guy Scott | Composite piezoelectric apparatus and method |
| JP2007181087A (ja) | 2005-12-28 | 2007-07-12 | Toshiba Corp | 薄膜圧電共振器およびフィルタ回路 |
| US8206305B2 (en) * | 2006-11-28 | 2012-06-26 | Siemens Medical Solutions Usa, Inc. | Multi-twisted acoustic array for medical ultrasound |
| DE102008062605B4 (de) | 2008-12-17 | 2018-10-18 | Snaptrack, Inc. | Bauelement, welches mit akustischen Wellen arbeitet, und Verfahren zu dessen Herstellung |
| EP2239845A1 (en) | 2009-04-09 | 2010-10-13 | Nxp B.V. | MEMS resonator |
| JP2011018959A (ja) * | 2009-07-07 | 2011-01-27 | Murata Mfg Co Ltd | 圧電振動子 |
| WO2011016994A1 (en) * | 2009-07-27 | 2011-02-10 | Cts Corporation | Encapsulated ceramic element and method of making the same |
| FI123640B (fi) | 2010-04-23 | 2013-08-30 | Teknologian Tutkimuskeskus Vtt | Laajakaistainen akustisesti kytketty ohutkalvo-BAW-suodin |
| FI20106063A7 (fi) * | 2010-10-14 | 2012-06-08 | Valtion Teknillinen Tutkimuskeskus | Akustisesti kytketty laajakaistainen ohutkalvo-BAW-suodatin |
| SG190064A1 (en) * | 2010-11-08 | 2013-06-28 | Agency Science Tech & Res | A piezoelectric resonator |
| FR2971652A1 (fr) | 2011-02-11 | 2012-08-17 | Commissariat Energie Atomique | Dispositif acoustique comprenant une structure de cristal phononique a inclusions de type conique et procede de realisation dudit dispositif |
| KR101893236B1 (ko) | 2011-04-01 | 2018-08-29 | 르네사스 일렉트로닉스 가부시키가이샤 | 반도체 장치 및 그 제조 방법과 휴대 전화기 |
-
2012
- 2012-12-06 DE DE102012111889.2A patent/DE102012111889B9/de not_active Expired - Fee Related
-
2013
- 2013-10-14 US US14/650,230 patent/US9497551B2/en active Active
- 2013-10-14 WO PCT/EP2013/071425 patent/WO2014086524A2/de not_active Ceased
- 2013-10-14 JP JP2015545704A patent/JP6382832B2/ja active Active
- 2013-10-14 CN CN201380064071.1A patent/CN104838588B/zh active Active
Also Published As
| Publication number | Publication date |
|---|---|
| WO2014086524A3 (de) | 2014-10-23 |
| DE102012111889B9 (de) | 2014-09-04 |
| CN104838588A (zh) | 2015-08-12 |
| DE102012111889B3 (de) | 2014-06-05 |
| JP2016506130A (ja) | 2016-02-25 |
| US20150312681A1 (en) | 2015-10-29 |
| WO2014086524A2 (de) | 2014-06-12 |
| CN104838588B (zh) | 2017-11-17 |
| US9497551B2 (en) | 2016-11-15 |
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